公开(公告)号：US20230135735A1

公开(公告)日：2023-05-04

申请号：US18088828

申请日：2022-12-27

申请人： APPLIED Materials, Inc.

发明人： John Hautala

IPC分类号： H01L21/311 ,  C23C16/50 ,  H01J37/32 ,  C23C16/458 ,  C23C16/455 ,  C23C14/22 ,  H01L21/308

摘要： A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

公开(公告)号：US20230071434A1

公开(公告)日：2023-03-09

申请号：US17850442

申请日：2022-06-27

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jiyoung SONG ,  Hyunseok SHIN ,  Taegyeong KIM ,  Youngdeog KOH ,  Kwangjoo KIM ,  Nohcheol PARK

IPC分类号： A47J36/04 ,  C23C14/02 ,  C23C14/06 ,  C23C14/22

摘要： An exterior material for cooking appliance capable of improving durability, heat resistance, scratch resistance, and cleaning performance by forming a Silicon-Diamond like carbon (SiDLC) coating layer including silicon (Si) under a high-temperature environment, and a method for manufacturing the exterior material. The exterior material includes: a base material; and a SiDLC coating layer provided on the base material, wherein the SiDLC coating layer includes Si of about 1 weight % to 50 weight %, carbon (C), and other inevitable impurities.

公开(公告)号：US11591686B2

公开(公告)日：2023-02-28

申请号：US17082169

申请日：2020-10-28

申请人： Universal Display Corporation

发明人： Gregory McGraw ,  William E. Quinn ,  Matthew King ,  Elliot H. Hartford, Jr. ,  Siddharth Harikrishna Mohan ,  Benjamin Swedlove ,  Gregg Kottas

IPC分类号： C23C14/54 ,  C23C14/12 ,  C23C14/22 ,  B41J2/045 ,  C23C14/04 ,  H01L51/56 ,  H01L51/00 ,  B05D1/00

摘要： Methods of modulating flow during vapor jet deposition of organic materials are provided. A method may include ejecting a vapor entrained in a delivery gas from a nozzle onto a substrate upon which the vapor condenses. A confinement gas may be provided that has a flow direction opposing a flow direction of the delivery gas ejected from the nozzle. A vacuum source may be provided that is adjacent to a delivery gas aperture of the nozzle. The method may include adjusting, by an actuator, a fly height separation between a deposition nozzle aperture of the nozzle and a deposition target.

公开(公告)号：US11512385B2

公开(公告)日：2022-11-29

申请号：US16715906

申请日：2019-12-16

申请人： Applied Materials, Inc.

发明人： Joseph C. Olson ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen ,  Morgan Evans ,  Jinxin Fu

IPC分类号： G03F7/20 ,  C23C14/22 ,  G02B5/18 ,  G03F7/00 ,  G03F7/16 ,  F21V8/00

摘要： Embodiments of the disclosure generally relate to methods of forming gratings. The method includes depositing a resist material on a grating material disposed over a substrate, patterning the resist material into a resist layer, projecting a first ion beam to the first device area to form a first plurality of gratings, and projecting a second ion beam to the second device area to form a second plurality of gratings. Using a patterned resist layer allows for projecting an ion beam over a large area, which is often easier than focusing the ion beam in a specific area.

公开(公告)号：US11482608B2

公开(公告)日：2022-10-25

申请号：US17119867

申请日：2020-12-11

申请人： STMICROELECTRONICS, INC.

发明人： John H. Zhang

IPC分类号： H01L21/8238 ,  H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  H01L29/45 ,  H01L29/49 ,  H01L21/8234 ,  H01L21/285 ,  H01L21/768 ,  C23C14/04 ,  C23C14/22 ,  H01L29/66

摘要： Energy bands of a thin film containing molecular clusters are tuned by controlling the size and the charge of the clusters during thin film deposition. Using atomic layer deposition, an ionic cluster film is formed in the gate region of a nanometer-scale transistor to adjust the threshold voltage, and a neutral cluster film is formed in the source and drain regions to adjust contact resistance. A work function semiconductor material such as a silver bromide or a lanthanum oxide is deposited so as to include clusters of different sizes such as dimers, trimers, and tetramers, formed from isolated monomers. A type of Atomic Layer Deposition system is used to deposit on semiconductor wafers molecular clusters to form thin film junctions having selected energy gaps. A beam of ions contains different ionic clusters which are then selected for deposition by passing the beam through a filter in which different apertures select clusters based on size and orientation.

公开(公告)号：US20220290814A1

公开(公告)日：2022-09-15

申请号：US17686663

申请日：2022-03-04

申请人： Tokyo Electron Limited

发明人： Seiya NASU

IPC分类号： F17C9/00 ,  C23C14/22

摘要： A processing apparatus includes: a processing container configured to accommodate a substrate; a storage tank connected to the processing container via a gas supply pipe; a pressure sensor configured to detect a pressure in the storage tank; a valve provided in the gas supply pipe between the processing container and the storage tank; and a controller configured to control an opening degree of the valve based on the pressure in the storage tank detected by the pressure sensor.

公开(公告)号：US20220243331A1

公开(公告)日：2022-08-04

申请号：US17166762

申请日：2021-02-03

申请人： Applied Materials, Inc.

发明人： Kirankumar Neelasandra SAVANDAIAH ,  Srinivasa Rao YEDLA ,  Nitin Bharadwaj SATYAVOLU ,  Ganesh SUBBUSWAMY ,  Devi Raghavee VEERAPPAN ,  Thomas BREZOCZKY

IPC分类号： C23C16/455 ,  C23C14/34 ,  C23C14/22

摘要： Aspects of the present disclosure provide systems and apparatuses for a substrate processing assembly with a laminar flow cavity gas injection for high and low pressure. A dual gas reservoir assembly is provided in a substrate processing chamber, positioned within a lower shield assembly. A first gas reservoir is in fluid communication with a processing volume of the substrate processing assembly via a plurality of gas inlet, positioned circumferentially about the processing volume. A second gas reservoir is positioned circumferentially about the first gas reservoir, coupled therewith via one or more reservoir ports. The second gas reservoir is in fluid communication with a first gas source. A recursive path gas assembly is positioned in an upper shield body adjacent to an electrode to provide one or more gases to a dark space gap.

公开(公告)号：US11382840B2

公开(公告)日：2022-07-12

申请号：US17113380

申请日：2020-12-07

申请人： DENTSPLY SIRONA, Inc.

发明人： Kevin Wilkinson ,  Geoffrey Ndungu

IPC分类号： A61K6/851 ,  A61L27/16 ,  A61L27/30 ,  A61L27/32 ,  A61K6/17 ,  A61K6/76 ,  A61K6/887 ,  A61C8/00 ,  A61C13/083 ,  C23C14/34 ,  C23C14/24 ,  A61C5/50 ,  A61C13/00 ,  C23C14/08 ,  B28B1/14 ,  B28B11/24 ,  C04B28/04 ,  C23C14/22 ,  C04B103/00 ,  C04B111/00

摘要： A dental device is improved in its ability to produce hydroxyl apatite by having a layer of mineral trioxide aggregate (MTA) deposited thereon. A tile of MTA is prepared, heat treated and sintered to produce a micronized tile of MTA that can then be deposited by physical vapor depositions, hot isostatic pressing, molding or other conventional technique.

公开(公告)号：US11282680B2

公开(公告)日：2022-03-22

申请号：US15119658

申请日：2014-12-19

申请人： BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

发明人： Hao Guo ,  Peng Chen ,  Jue Hou

IPC分类号： H01J37/32 ,  C23C14/22 ,  C23C16/50 ,  H01L21/687 ,  C23C14/50 ,  H01J37/20

摘要： Embodiments of the invention provide a bearing device and a plasma processing apparatus. According to at least one embodiment, the bearing device includes a base, a base driving mechanism, a pressing ring and a baffle ring. The base is used for bearing a workpiece to be processed; the base driving mechanism is used for driving the base to move up to a process position or down to a loading and unloading position; the pressing ring is used for clamping an edge region of the workpiece to be processed on the base when the base is at the process position; the baffle ring surrounds an outer peripheral wall of the base and is located under the pressing ring; surfaces of the pressing ring and the baffle ring opposite to each other include a pair of guiding tori, which are inclined outwardly at a same angle with respect to a centerline of the base in a vertical direction; and, during the process of driving the base to move up by the base driving mechanism, the guiding tori contact and move toward each other, so as to achieve positioning of the pressing ring and the base.

公开(公告)号：US11261518B2

公开(公告)日：2022-03-01

申请号：US16128564

申请日：2018-09-12

申请人： City University of Hong Kong

发明人： Ruiqin Zhang ,  Wei Xiong ,  Miaoyan Huang ,  Haoran Tian

IPC分类号： C23C14/22 ,  C23C14/06 ,  C03C17/22 ,  H01L21/02

摘要： A method of producing a film of carbon nitride material, including the steps of providing a precursor of the carbon nitride material in a reacting vessel and a substrate substantially above the precursor of the carbon nitride material; heating the reacting vessel, the precursor of the carbon nitride material and the substrate at the first predetermined temperature; and quenching the reacting vessel to reach the second predetermined temperature; wherein the film of carbon nitride material is formed on a surface of the substrate during the quenching of the reacting vessel.