公开(公告)号：US11639543B2

公开(公告)日：2023-05-02

申请号：US16875594

申请日：2020-05-15

申请人： Thin Film Service, Inc.

发明人： Ollivier Lefevre

IPC分类号： C23C14/06 ,  C23C14/24 ,  C23C14/35 ,  C23C16/50 ,  C23C14/50 ,  C23C14/10

摘要： A tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite composition can include: tetrahedral amorphous hydrogenated carbon (ta-C:H); and amorphous siloxane (a-Si:O), wherein the ta-C:H and a-Si:O are in an interpenetrating network. A method of forming a tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite can include: providing a source of H, C, O, and Si as a liquid precursor; providing evaporated precursor into a vacuum chamber; forming a plasma with an RF plasma generator and/or a thermal plasma generator; and depositing, on a rotating biased substrate, a collimated layer of the tetrahedral amorphous hydrogenated carbon and amorphous siloxane hybrid diamond-like nanocomposite having tetrahedral amorphous hydrogenated carbon (ta-C:H) and amorphous siloxane (a-Si:O), wherein the ta-C:H and a-Si:O are in an interpenetrating network. A RF rotating electrode is also provided.

公开(公告)号：US20230131985A1

公开(公告)日：2023-04-27

申请号：US17912196

申请日：2021-03-18

申请人： NITTO DENKO CORPORATION

发明人： Nozomi Fujino ,  Taisuke Karasuda

IPC分类号： H01B5/14 ,  H01B1/08 ,  C23C14/00 ,  C23C14/35 ,  C23C14/58

摘要： The transparent conductive layer (3) includes a first main surface (5), and a second main surface (6) opposed to the first main surface (5) in a thickness direction. The transparent conductive layer (3) has a first grain boundary (7) in which two end edges (23) in a cross-sectional view are both opened to the first main surface (5) and an intermediate region (25) between the end edges (23) is not in contact with the second main surface (6); and a first crystal grain (31) partitioned by the first grain boundary (7) and facing only the first main surface (5). The transparent conductive layer (3) contains rare gas atoms having a higher atomic number than argon atoms.

公开(公告)号：US11615947B2

公开(公告)日：2023-03-28

申请号：US17408221

申请日：2021-08-20

申请人： OEM Group, LLC

发明人： Marc-Andre Lariviere ,  Juan M. Rios Reyes ,  Nitin Choudhary ,  Chao Li ,  Brendan V. Trang ,  Christian K. Forgey ,  Michael S. Correra ,  William W. Senseman

IPC分类号： H01J37/34 ,  C23C14/35 ,  C23C14/34 ,  H01F7/20

摘要： The present invention provides a magnetron system, comprising a baseplate assembly. The baseplate assembly defining a housing portion and a power feedthrough. A sputtering target is disposed within the housing portion of the baseplate assembly. An electromagnetic assembly is disposed within the housing portion of the baseplate assembly. The electromagnetic assembly comprising a plurality of electromagnet pairs and a plurality of magnet pairs, wherein the plurality of electromagnet pairs and the plurality of magnet pairs are arranged in an alternating order such that at least one electromagnet pair of the plurality of electromagnet pairs is juxtapositioned between two magnet pairs of the plurality of magnet pairs, and at least one magnet pair of the plurality of magnet pairs is juxtapositioned between two electromagnet pairs of the plurality of electromagnet pairs.

公开(公告)号：US20230088552A1

公开(公告)日：2023-03-23

申请号：US17478047

申请日：2021-09-17

申请人： Applied Materials, Inc.

发明人： Borui Xia ,  Anthony Chih-Tung Chan ,  Shiyu Yue ,  Wei Lei ,  Aravind Miyar Kamath ,  Mukund Sundararajan ,  Rongjun Wang ,  Adolph Miller Allen

IPC分类号： H01F7/18 ,  C23C14/35

摘要： Magnet assemblies comprising a housing with a top plate each comprising aligned openings are described. The housing has a bottom ring and an annular wall with a plurality of openings formed in the bottom ring. The top plate is on the housing and has a plurality of openings aligned with the plurality of openings in the bottom ring of the housing. The magnet assembly may also include a non-conducting base plate and/or a conductive cover plate. Methods for using the magnet assembly and magnetic field tuning are also described.

公开(公告)号：US11608555B2

公开(公告)日：2023-03-21

申请号：US17198756

申请日：2021-03-11

申请人： TOKYO ELECTRON LIMITED

发明人： Manabu Nakagawasai

IPC分类号： C23C14/35 ,  C23C14/50 ,  H01J37/34 ,  H01J37/32 ,  C23C14/56 ,  C23C14/22

摘要： A sputtering apparatus includes a base on which a substrate is mounted, an annular member disposed at an outer periphery of the base to surround a side surface and a backside of the substrate without in contact with the substrate, and an edge cover that covers an outer edge of an upper surface of the substrate mounted on the base. The annular member has a first surface facing the backside of the substrate mounted on the base with a gap, a second surface facing the side surface of the substrate mounted on the base with a gap, and a tapered surface formed at a corner portion between the first surface and the second surface.

公开(公告)号：US11605721B2

公开(公告)日：2023-03-14

申请号：US17006874

申请日：2020-08-30

申请人： Kaixuan Shi ,  Haodian Shi ,  Yanqing Wu ,  Anping Hu ,  Xibei Yu

发明人： Kaixuan Shi ,  Haodian Shi ,  Yanqing Wu ,  Anping Hu ,  Xibei Yu

IPC分类号： H01L29/45 ,  H01L21/443 ,  H01L29/22 ,  H01L29/93 ,  C23C14/35 ,  C23C14/18 ,  C22C21/00 ,  H01C7/00 ,  C22C19/05 ,  C22C14/00

摘要： An electrode with multiple metallic-layers structure formed by a magnetron sputtering technique for a semiconductor device and method for producing same is disclosed. The ceramic device includes at least one from selected group consisting of ZnO-MOV (metal oxide varistors), BaTiO3-PTC (positive temperature coefficient) thermistors, Mn3O4-NTC (negative temperature coefficient) thermistors, and capacitors. The multiple metallic-layers include a sputtered buffer layer and a sputtered electrical contact layer. The buffer layer includes at least one alloy selected form group consisting of NiCr (Ni from 50-90 wt %), TiNi (Ti from 40-60 wt %), and AlNi (Al from 40-70 wt %) and the thickness of this layer is from greater than zero to less than 100 nm. The electrical contact layer includes at least one of Cu, Ag, Pt, Au, or combination. More specifically, the electrode includes one of NiCr/Cu system, NiCr/Ag system, NiCr/Cu/Ag system, TiNi/Cu/Ag system, or AlNi/Cu/Ag system. The thickness ratio of the electrical contact layer to the intermetallic barrier layer is from 1 to 4.

公开(公告)号：US20230065664A1

公开(公告)日：2023-03-02

申请号：US17735307

申请日：2022-05-03

申请人： Samsung Display Co., LTD.

发明人： Takayuki FUKASAWA

IPC分类号： C23C14/35 ,  C23C14/34 ,  C23C14/50

摘要： A sputtering device includes a substrate transferring unit which moves a substrate, a back plate disposed above the substrate transferring unit and supporting a target, and a magnet disposed on a second surface of the back plate which is opposite to a first surface of the back plate facing the substrate transferring unit, where the back plate includes a first portion and a second portion, which is bent from the first portion at a first angle.

公开(公告)号：US11594402B2

公开(公告)日：2023-02-28

申请号：US16770271

申请日：2018-11-19

申请人： OERLIKON SURFACE SOLUTIONS AG, Pfaffikon

发明人： Othmar Züger

IPC分类号： H01J37/34 ,  C23C14/35 ,  C23C14/50

摘要： Magnetron sputtering source (1) for coating of a substrate (2), the sputtering source (1) comprising: a target (5) having a target surface at a front side a magnetron arrangement (511, 512) at a backside of the target (5) for creating a magnetic field near the target surface, to define a loop shaped erosion zone (20) at the target surface between an inner magnet assembly (512) and an outer magnet assembly (511), wherein the erosion zone (20) comprises a middle section with two parallel tracks (26) having a distance (d) and two curved end loop sections (27) each of which connects adjoining ends of the parallel tracks (26) and has a loop width (w) in the direction of the distance (d) which is greater than the distance (d) resulting in a double-T-shaped primary geometry of the erosion zone to provide an increased coating material flux from the end loop sections (27) to the substrate.

公开(公告)号：US11581183B2

公开(公告)日：2023-02-14

申请号：US17192882

申请日：2021-03-04

申请人： Applied Materials, Inc.

发明人： Bhargav S. Citla ,  Mei-Yee Shek ,  Srinivas D. Nemani

IPC分类号： H01L21/02 ,  C23C14/02 ,  C23C14/06 ,  H01L21/033 ,  C23C14/35

摘要： Embodiments described herein provide for post deposition anneal of a substrate, having an amorphous carbon layer deposited thereon, to desirably reduce variations in local stresses thereacross. In one embodiment, a method of processing a substrate includes positioning a substrate, having an amorphous carbon layer deposited thereon, in a first processing volume, flowing an anneal gas into the first processing volume, heating the substrate to an anneal temperature of not more than about 450° C., and maintaining the substrate at the anneal temperature for about 30 seconds or more. Herein, the amorphous carbon layer was deposited on the substrate using a method which included positioning the substrate on a substrate support disposed in a second processing volume, flowing a processing gas into the second processing volume, applying pulsed DC power to a carbon target disposed in the second processing volume, forming a plasma of the processing gas, and depositing the amorphous carbon layer on the substrate.

公开(公告)号：US11572618B2

公开(公告)日：2023-02-07

申请号：US17003969

申请日：2020-08-26

申请人： Applied Materials, Inc.

发明人： Jothilingam Ramalingam ,  Xiaozhou Che ,  Yong Cao ,  Shane Lavan ,  Chunming Zhou

IPC分类号： C23C14/35 ,  H01L21/02 ,  C23C14/06 ,  H01J37/34 ,  H01J37/32

摘要： A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber.