利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11073 条记录 (耗时 0.027 秒)

    Substrate processing method and substrate processing apparatus
    2.
    发明授权
    Substrate processing method and substrate processing apparatus 有权

    公开(公告)号：US12104251B2

    公开(公告)日：2024-10-01

    申请号：US16823873

    申请日：2020-03-19

    申请人： Tokyo Electron Limited

    发明人： Tatsuya Yamaguchi ,  Syuji Nozawa

    IPC分类号： C23C16/00 ,  C23C16/02 ,  C23C16/40 ,  C23C16/48

    CPC分类号： C23C16/48 ,  C23C16/0209 ,  C23C16/401

    摘要： A substrate processing method includes: forming a coating film so as to cover a front surface of the substrate, the substrate having a recess formed in the front surface and in which an organic film is formed; heating the substrate to turn the organic film into a gas, removing the gas from an interior of the recess by causing the gas to pass through the coating film, and forming in the substrate a sealed space surrounded by the recess and the coating film; supplying a processing gas into the sealed space; and irradiating the substrate with a light to activate the processing gas in the sealed space, causing a reaction product gas to pass through the coating film, and removing the reaction product gas, wherein the reaction product gas is generated by a reaction between a residue of the organic film and the activated processing gas in the sealed space.

    Liner assemblies for substrate processing systems
    4.
    发明授权
    Liner assemblies for substrate processing systems 有权

    公开(公告)号：US12071686B2

    公开(公告)日：2024-08-27

    申请号：US18307988

    申请日：2023-04-27

    申请人： GlobalWafers Co., Ltd.

    发明人： Arash Abedijaberi ,  Shawn George Thomas

    IPC分类号： C23C16/00 ,  C23C16/455 ,  H01J37/32 ,  H01L21/00

    CPC分类号： C23C16/45504 ,  C23C16/45563 ,  H01J37/3244 ,  H01J37/32477

    摘要： A liner assembly for a substrate processing system includes a first liner and a second liner. The first liner includes an annular body and an outer peripheral surface including a first fluid guide. The first fluid guide is curved about a circumferential line extending around the first liner. The second liner includes an annular body, an outer rim, an inner rim, a second fluid guide extending between the outer rim and the inner rim, and a plurality of partition walls extending outwardly from the second fluid guide. The second fluid guide is curved about the circumferential line when the first and second liners are positioned within the processing system.

    Plasma processing apparatus and plasma processing method
    6.
    发明授权
    Plasma processing apparatus and plasma processing method 有权

    公开(公告)号：US12057294B2

    公开(公告)日：2024-08-06

    申请号：US17123130

    申请日：2020-12-16

    申请人： Tokyo Electron Limited

    发明人： Chishio Koshimizu ,  Gen Tamamushi ,  Masahiro Inoue

    IPC分类号： C23C16/00 ,  H01J37/32 ,  H01L21/306

    CPC分类号： H01J37/32155 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32715

    摘要： An apparatus, method, and non-transitory computer-readable medium reduces the power level of a reflected wave from a load coupled to a radio-frequency power supply. A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, a bias power supply, and a controller. The bias power supply periodically applies a pulsed negative voltage to the substrate support. The controller controls the radio-frequency power supply to provide radio-frequency power with a changed frequency within a period in which the pulsed negative voltage is applied from the bias power supply to the substrate support, to reduce a power level of a reflected wave from a load that is coupled to the radio-frequency power supply.