公开(公告)号：US20250069886A1

公开(公告)日：2025-02-27

申请号：US18726391

申请日：2023-01-25

Applicant: JUSUNG ENGINEERING CO., LTD.

Inventor： Duck Ho KIM ,  Min Hyuk KIM ,  Kyung In MIN ,  Chang Kyun PARK ,  Jun Hee HAN

IPC: H01L21/02 ,  C23C16/40 ,  H01L29/49 ,  H01L29/51

Abstract: The present inventive concept relates to a thin film manufacturing method and a thin film. The thin film manufacturing method comprises: an adsorption step of adsorbing a high-k material on a substrate by spraying a source gas consisting of a high-k material; a deposition step of depositing a thin film consisting of the high-k material on the substrate by spraying a reaction gas that reacts with the source gas; and a crystallization step of crystallizing the high-k material using plasma.

公开(公告)号：US20250069883A1

公开(公告)日：2025-02-27

申请号：US18810573

申请日：2024-08-21

Applicant: ASM IP Holding B.V.

Inventor： Vincent Vandalon ,  Marko Tuominen ,  Krzysztof Kamil Kachel ,  YongGyu Han ,  Nadadur Veeraraghavan Srinath ,  Kranthi Kumar Vaidyula ,  Shaoren Deng

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: The disclosure relates to methods of selectively depositing an oxide material layer on a first surface of a semiconductor substrate relative to a second surface of the same substrate, to semiconductor processing assemblies, as well as to oxide material layers, structures and devices comprising an oxide material layer deposited according to the current disclosure. In the method, an oxide material layer is selectively deposited using a first precursor and an oxygen precursor. The second surface may be passivated against deposition of oxide material.

公开(公告)号：US20250067928A1

公开(公告)日：2025-02-27

申请号：US18811011

申请日：2024-08-21

Applicant: The Regents of the University of Michigan

Inventor： Dachuan WU ,  Yasha YI

IPC: G02B6/12 ,  C23C16/02 ,  C23C16/24 ,  C23C16/40 ,  G02B6/293

Abstract: An optical phased array, device incorporating the same, and method for fabricating the same. The method, describable as a method for fabricating a three-dimensional (3D) optical phased array (OPA), includes: simultaneously etching multiple waveguide-cladding layers to form a plurality of waveguide paths, each of which terminates at a common edge; and/or generating a waveguide-cladding stack having a plurality of waveguide layers and a plurality of cladding layers, and simultaneously etching multiple layers of a waveguide-cladding stack to form a plurality of waveguide paths, each of which terminates at a common edge. The optical phased array has a plurality of self-aligned waveguide layers.

公开(公告)号：US12238850B2

公开(公告)日：2025-02-25

申请号：US18413207

申请日：2024-01-16

Applicant: NEUBORON THERAPY SYSTEM LTD.

Inventor： Yuan-hao Liu ,  Chun-ting Lin

IPC: H05H3/06 ,  A61N5/10 ,  C23C14/16 ,  C23C14/34 ,  C23C16/40 ,  C23C16/455 ,  C23C28/00

Abstract: A neutron capture therapy system and a target material for a particle beam generation apparatus, the heat dissipation performance of a target material might be improved. A neutron capture therapy system includes a neutron generation apparatus and a beam shaping body, the neutron generation apparatus includes an accelerator and a target material, and a charged particle beam generated by means of acceleration of the accelerator acts with the target material to generate a neutron beam. The target material includes an active layer, an anti-foaming layer, a heat dissipation layer and a heat conduction layer, the active layer acts with a charged particle beam to generate a neutron beam; the anti-foaming layer suppresses foaming caused by the charged particle beam; the heat dissipation layer directly and rapidly conducts to the heat conduction layer, heat deposited on the active layer, and discharges by means of a cooling medium.

公开(公告)号：US12233169B2

公开(公告)日：2025-02-25

申请号：US17004827

申请日：2020-08-27

Applicant: Applied Materials, Inc.

Inventor： Colin C. Neikirk

IPC: A61K9/51 ,  B82Y5/00 ,  B82Y30/00 ,  B82Y40/00 ,  C23C16/40 ,  C23C16/44

Abstract: A method of preparing an abuse deterrent pharmaceutical composition having a drug-containing core enclosed by one or more metal oxide materials is provided. The method includes the sequential steps of (a) loading the particles comprising the drug into a reactor, (b) applying a vaporous or gaseous metal precursor to the particles in the reactor, (c) performing one or more pump-purge cycles of the reactor using inert gas, (d) applying a vaporous or gaseous oxidant to the particles in the reactor, and (e) performing one or more pump-purge cycles of the reactor using inert gas. This produces an abuse deterrent pharmaceutical composition comprising a drug containing core enclosed by one or more metal oxide materials.

公开(公告)号：US12228534B2

公开(公告)日：2025-02-18

申请号：US18604257

申请日：2024-03-13

Applicant: Applied Materials, Inc.

Inventor： Xiaopu Li ,  Kallol Bera ,  Yaoling Pan ,  Kelvin Chan ,  Amir Bayati ,  Philip Allan Kraus ,  Kenric T. Choi ,  William John Durand

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  G01N27/22 ,  G01N33/00 ,  H01L21/67

Abstract: Embodiments disclosed herein include gas concentration sensors, and methods of using such gas concentration sensors. In an embodiment, a gas concentration sensor comprises a first electrode. In an embodiment the first electrode comprises first fingers. In an embodiment, the gas concentration sensor further comprises a second electrode. In an embodiment, the second electrode comprises second fingers that are interdigitated with the first fingers.

公开(公告)号：US20250051911A1

公开(公告)日：2025-02-13

申请号：US18720116

申请日：2022-12-14

Applicant: AIR WATER INC. ,  KOKUSAI ELECTRIC CORPORATION

Inventor： Fumio KAWASAKI ,  Keisuke NAGATA ,  Yasunori OTSUKA ,  Kimihiko NAKATANI ,  Yoshitomo HASHIMOTO ,  Yoshiro HIROSE

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  H01L21/02

Abstract: A film forming method for forming a film on a workpiece is disclosed including: supplying a source gas into a treatment container provided with the workpiece to adsorb the source gas on the workpiece, and then purging an inside of the treatment container with a first purge gas, and supplying a reaction gas into the treatment container after the source gas supply process to oxidize the source gas adsorbed on the workpiece, and then purging the inside of the treatment container with a second purge gas, in which for example, the source gas and a first catalyst gas are supplied to the treatment container in the source gas supply process, the reaction gas and a second catalyst gas are supplied to the treatment container in the reaction gas supply process, and the same or different non-aromatic amine gas are used as the first catalyst gas and the second catalyst gas.

公开(公告)号：US12216332B2

公开(公告)日：2025-02-04

申请号：US17545001

申请日：2021-12-08

Applicant: LARGAN PRECISION CO., LTD.

Inventor： Chien-Pang Chang ,  Wen-Yu Tsai ,  Lin-An Chang ,  Ming-Ta Chou ,  Kuo-Chiang Chu

IPC: G02B9/04 ,  C23C16/40 ,  G02B1/04 ,  G02B1/11 ,  G02B3/04

Abstract: An imaging lens assembly has an optical axis and includes a plastic lens element set. The plastic lens element set includes two plastic lens elements and at least one anti-reflective layer. The two plastic lens elements, in order from an object side to an image side along the optical axis are a first plastic lens element and a second plastic lens element. The anti-reflective layer has a nanostructure and is disposed on at least one of an image-side surface of the first plastic lens element and an object-side surface of the second plastic lens element.

公开(公告)号：US12209309B2

公开(公告)日：2025-01-28

申请号：US17991226

申请日：2022-11-21

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Takenori Watabe ,  Hiroshi Hashigami

IPC: C23C16/448 ,  C23C16/40 ,  C23C16/455

Abstract: A film forming method for forming a film by heating a mist in a film-forming unit, the method including steps of: atomizing a raw-material solution in an atomizer to generate a mist; conveying the mist with a carrier gas from the atomizer to the film-forming unit through a conveyor that connects the atomizer and the film-forming unit; and heating the mist to form a film on a substrate in the film-forming unit. In this method, a flow rate of the carrier gas and a temperature of the carrier gas are controlled to satisfy 7

公开(公告)号：US20250029833A1

公开(公告)日：2025-01-23

申请号：US18223881

申请日：2023-07-19

Applicant: Tokyo Electron Limited

Inventor： Lior Huli ,  Nathan Antonovich ,  Dina Triyoso

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Various embodiments of methods are provided to control formation of self-assembled monolayers (SAMs) used in an area-selective deposition (ASD) process, and thus, prevent defects in the ASD process. In the disclosed embodiments, a SAM structure is formed via a spin-on process that includes: (a) a spin coating step for coating a surface of a semiconductor substrate with a liquid solution containing SAM-forming molecules, the semiconductor substrate having a target material and a non-target material exposed on the substrate surface, and (b) an anneal step for heat treating the semiconductor substrate to chemically bond the SAM-forming molecules to the non-target material exposed on the substrate surface. By controlling and/or varying process parameter(s) utilized during the anneal step, the embodiments disclosed herein improve the selectivity of the SAM structure to the non-target material and prevent defects from occurring when a film is subsequently deposited onto the target material.