公开(公告)号：US12129548B2

公开(公告)日：2024-10-29

申请号：US18130959

申请日：2023-04-05

申请人： ASM IP Holding B.V.

发明人： Tomohiro Kubota ,  Mitsuya Utsuno ,  Toshihisa Nozawa ,  Seiji Samukawa ,  Hua Hsuan Chen

IPC分类号： C23C16/455 ,  C23C16/40 ,  C23C16/48 ,  H05H3/02

CPC分类号： C23C16/45536 ,  C23C16/402 ,  C23C16/45553 ,  C23C16/486 ,  H05H3/02

摘要： Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.

公开(公告)号：US12116376B2

公开(公告)日：2024-10-15

申请号：US18097406

申请日：2023-01-16

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Andrea Leoncini ,  Paul Mehlmann ,  Nemanja Dordevic ,  Han Vinh Huynh ,  Doreen Wei Ying Yong

IPC分类号： C23C16/32 ,  C07F11/00 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  C23C16/42

CPC分类号： C07F11/00 ,  C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/405 ,  C23C16/42

摘要： Molybdenum(0) coordination complexes comprising an arene ligand and one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20240339318A1

公开(公告)日：2024-10-10

申请号：US18595374

申请日：2024-03-04

申请人： Applied Materials, Inc.

发明人： Steven C. H. HUNG ,  Theresa Kramer GUARINI ,  Johanes F. SWENBERG

IPC分类号： H01L21/02 ,  C23C8/16 ,  C23C8/36 ,  C23C8/80 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56 ,  C23C28/04

CPC分类号： H01L21/02332 ,  C23C8/16 ,  C23C8/36 ,  C23C8/80 ,  C23C16/0227 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/52 ,  C23C16/56 ,  C23C28/042 ,  H01L21/02181 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/0234

摘要： A method of forming a semiconductor structure includes performing a first deposition process to deposit a first high-K dielectric layer on a surface of a substrate, performing an interface formation process to form an interfacial layer on the surface of the substrate, performing a second deposition process to deposit a second high-K dielectric layer on the interfacial layer, performing a plasma nitridation process to insert nitrogen atoms in the first high-K dielectric layer and the second high-K dielectric layer, and performing an anneal process to passivate chemical bonds in the first high-K dielectric layer and the second high-K dielectric layer.

公开(公告)号：US12112896B2

公开(公告)日：2024-10-08

申请号：US17426039

申请日：2020-02-19

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Naomi Kurihara ,  Akihiro Yamaguchi ,  Mitsuhisa Yoshimura ,  Miwa Ogawa

IPC分类号： C23C16/40 ,  C23C16/02 ,  H01G9/00 ,  H01G13/00 ,  H01G9/055

CPC分类号： H01G9/0032 ,  C23C16/0209 ,  C23C16/40 ,  H01G13/006 ,  H01G9/055

摘要： A film production method for producing a layer containing a metal oxide, the film production method including: a heating step of heating a metal foil containing a first metal by bringing a part of the metal foil into contact with at least one heat generator; a first contact step of letting first gas containing a second metal to be in contact with both surfaces of the metal foil in a state where the part of the metal foil is supported; and a second contact step of letting second gas containing an oxidant to be in contact with the both surfaces of the metal foil in a state where the part of the metal foil is supported.

公开(公告)号：US12109627B2

公开(公告)日：2024-10-08

申请号：US17687730

申请日：2022-03-07

申请人： TUNGALOY CORPORATION

发明人： Cangyu Fan

IPC分类号： B23B27/14 ,  B23C5/16 ,  C23C16/02 ,  C23C16/34 ,  C23C16/40 ,  C23C30/00

CPC分类号： B23B27/148 ,  B23C5/16 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/34 ,  C23C16/403 ,  C23C30/005 ,  B23B2228/105

摘要： A coated cutting tool, comprising: a substrate; and a coating layer formed on a surface of the substrate, wherein the coating layer includes a lower layer and an upper layer in this order from the substrate side toward the surface side of the coating layer, and the upper layer is formed on a surface of the lower layer, the lower layer contains a compound having a composition represented by (AlxTi1-x)N, an average thickness of the lower layer is 1.0 μm or more and 15.0 μm or less, the upper layer contains an α-Al2O3 layer containing α-Al2O3, an average thickness of the upper layer is 0.5 μm or more and 15.0 μm or less, and in the α-Al2O3 layer, a texture coefficient TC (1, 1, 6) of a (1, 1, 6) plane is 2.0 or more and 6.0 or less.

公开(公告)号：US12109626B2

公开(公告)日：2024-10-08

申请号：US17687726

申请日：2022-03-07

申请人： TUNGALOY CORPORATION

发明人： Cangyu Fan

IPC分类号： B23B27/14 ,  C23C16/36 ,  C23C16/40 ,  C23C28/04 ,  B23C5/16

CPC分类号： B23B27/148 ,  C23C16/36 ,  C23C16/403 ,  C23C28/042 ,  C23C28/044 ,  B23B2224/04 ,  B23B2224/32 ,  B23B2228/105 ,  B23C5/16

摘要： A coated cutting tool, comprising: a substrate; and a coating layer formed on a surface of the substrate, wherein the coating layer includes a lower layer and an upper layer in this order from a substrate side toward a surface side, and the upper layer is formed on a surface of the lower layer, the lower layer contains a compound having a composition represented by (AlxTi1-x)N, an average thickness of the lower layer is 1.0 μm or more and 15.0 μm or less, the upper layer contains an α-Al2O3 layer containing α-Al2O3, an average thickness of the upper layer is 0.5 μm or more and 15.0 μm or less, and in grains of the α-Al2O3 layer, a proportion of grains of which a grain size is 0.05 μm or more and less than 0.5 μm is 50% by area or more and 80% by area or less.

公开(公告)号：US20240329322A1

公开(公告)日：2024-10-03

申请号：US18625979

申请日：2024-04-03

申请人： Applied Materials, Inc.

发明人： Jinyu LU ,  Ludovic Godet ,  Jinxin FU ,  Kenichi OHNO ,  Shangyi Chen ,  Takashi KURATOMI ,  Erica CHEN ,  Rami HURARNI ,  Yangyang SUN

IPC分类号： G02B6/34 ,  C23C16/40 ,  C23C16/455

CPC分类号： G02B6/34 ,  C23C16/403 ,  C23C16/45553

摘要： Embodiments described herein relate to improved waveguides with materials layers improving the optical properties of one or more surface regions of waveguides and methods of forming the same. In one embodiment, a waveguide is provided. The waveguide including a substrate, a grating disposed in or on the substrate, the grating comprising a plurality of structures defined by a plurality of trenches, a layer of silicon oxide or aluminum oxide disposed over the structures on the substrate. The layer is disposed over sidewalls and top surfaces of the structures, and a bottom surface of the trenches. The waveguide further includes a high index layer disposed over the layer. The high index layer is disposed over the sidewalls and the top surfaces of the structures, and the bottom surface of the trenches with the layer disposed in between the structures and the high index layer.

公开(公告)号：US20240327976A1

公开(公告)日：2024-10-03

申请号：US18742551

申请日：2024-06-13

申请人： Kokusai Electric Corporation ,  AIR WATER INC.

发明人： Kimihiko NAKATANI ,  Yoshitomo HASHIMOTO ,  Yoshiro HIROSE ,  Fumio KAWASAKI ,  Yasunori OTSUKA ,  Keisuke NAGATA

IPC分类号： C23C16/40 ,  B01J31/02 ,  C23C16/02 ,  C23C16/455

CPC分类号： C23C16/401 ,  B01J31/0237 ,  C23C16/0272 ,  C23C16/45557

摘要： There is provided a technique that includes: providing a substrate including a conductive film and an insulating film on a surface of the substrate; and forming an oxide film on a surface of the insulating film, among the conductive film and the insulating film, by supplying a halogen-free precursor, an oxidizing agent, and a catalyst to the substrate under a non-plasma atmosphere.

公开(公告)号：US12104251B2

公开(公告)日：2024-10-01

申请号：US16823873

申请日：2020-03-19

申请人： Tokyo Electron Limited

发明人： Tatsuya Yamaguchi ,  Syuji Nozawa

IPC分类号： C23C16/00 ,  C23C16/02 ,  C23C16/40 ,  C23C16/48

CPC分类号： C23C16/48 ,  C23C16/0209 ,  C23C16/401

摘要： A substrate processing method includes: forming a coating film so as to cover a front surface of the substrate, the substrate having a recess formed in the front surface and in which an organic film is formed; heating the substrate to turn the organic film into a gas, removing the gas from an interior of the recess by causing the gas to pass through the coating film, and forming in the substrate a sealed space surrounded by the recess and the coating film; supplying a processing gas into the sealed space; and irradiating the substrate with a light to activate the processing gas in the sealed space, causing a reaction product gas to pass through the coating film, and removing the reaction product gas, wherein the reaction product gas is generated by a reaction between a residue of the organic film and the activated processing gas in the sealed space.

公开(公告)号：US12099294B2

公开(公告)日：2024-09-24

申请号：US16650510

申请日：2018-09-28

申请人： University of Massachusetts

发明人： James J. Watkins ,  Irene R. Howell

IPC分类号： G03F7/00 ,  B05D1/00 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

CPC分类号： G03F7/0002 ,  B05D1/005 ,  C23C16/045 ,  C23C16/405 ,  C23C16/45525

摘要： Various embodiments disclosed relate to methods of manufacturing textured surfaces nanoimprint lithography with nanoparticulate inks. The present invention provides methods that allow flexible patterning of substrates with features having complex geometries.