公开(公告)号：US20240295024A1

公开(公告)日：2024-09-05

申请号：US18588315

申请日：2024-02-27

申请人： Tokyo Electron Limited

发明人： Makoto TAKAHASHI ,  Masato KADOBE ,  Tatsuya YAMAGUCHI

IPC分类号： C23C16/455 ,  C23C16/48

CPC分类号： C23C16/45548 ,  C23C16/4557 ,  C23C16/45578 ,  C23C16/481

摘要： A substrate processing apparatus includes: a processing container capable of accommodating a substrate holder that holds substrates; a gas supply chamber provided in a side wall of the processing container, a supply-side pipe extending horizontally from the gas supply chamber, and an injector detachably disposed spanning through the gas supply chamber and the supply-side pipe.

公开(公告)号：US11981993B2

公开(公告)日：2024-05-14

申请号：US16646277

申请日：2019-05-10

申请人： Tokyo Electron Limited

发明人： Michishige Saito ,  Kazuya Nagaseki ,  Shota Kaneko

IPC分类号： C23C16/44 ,  B23K26/144 ,  B23K26/34 ,  B33Y10/00 ,  B33Y50/00 ,  B33Y80/00 ,  C23C16/48 ,  H01J37/32

CPC分类号： C23C16/4404 ,  B23K26/144 ,  B23K26/34 ,  B33Y10/00 ,  B33Y80/00 ,  C23C16/44 ,  C23C16/483 ,  C23C16/487 ,  H01J37/32477 ,  H01J37/32642 ,  H01J37/32935 ,  B33Y50/00 ,  H01J2237/332 ,  H01J2237/334

摘要： A forming method of a component used in a plasma processing apparatus includes irradiating an energy beam to a source material of the component while supplying the source material based on a surface state of the component.

公开(公告)号：US11967501B2

公开(公告)日：2024-04-23

申请号：US17582844

申请日：2022-01-24

申请人： Kokusai Electric Corporation

发明人： Hiroaki Hiramatsu ,  Shuhei Saido ,  Takuro Ushida

IPC分类号： C23C16/40 ,  B25B11/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  C23C16/52 ,  H01L21/02

CPC分类号： H01L21/0217 ,  B25B11/005 ,  C23C16/4412 ,  C23C16/45578 ,  C23C16/481 ,  C23C16/52

摘要： Described herein is a technique capable of improving a film uniformity on a surface of a substrate and a film uniformity among a plurality of substrates including the substrate. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate retainer including: a product wafer support region, an upper dummy wafer support region and a lower dummy wafer support region; a process chamber in which the substrate retainer is accommodated; a first, a second and a third gas supplier; and an exhaust system. Each of the first gas and the third gas supplier includes a vertically extending nozzle with holes, wherein an upper of an uppermost hole and a lower end of a lowermost hole are arranged corresponding to an uppermost and a lowermost dummy wafer, respectively. The second gas supplier includes a nozzle with holes or a slit.

公开(公告)号：US20240112930A1

公开(公告)日：2024-04-04

申请号：US18476117

申请日：2023-09-27

申请人： ASM IP Holding, B.V.

发明人： Fan Gao ,  Peipei Gao ,  Wentao Wang ,  Kai Zhou ,  Kishor Patil ,  Han Ye ,  Xing Lin ,  Alexandros Demos

IPC分类号： H01L21/67 ,  B23K26/03 ,  B23K26/06 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/52 ,  G05D23/19

CPC分类号： H01L21/67115 ,  B23K26/034 ,  B23K26/0626 ,  B23K26/0643 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/483 ,  C23C16/52 ,  G05D23/1931 ,  H01L21/67109

摘要： A chamber arrangement includes a chamber body, a substrate support, and a laser source. The substrate support is arranged within the chamber body and supported for rotation about a rotation axis relative to the chamber body. The laser source is arranged outside of the chamber body and optically coupled to the substrate support along a lasing axis. The lasing axis intersects the substrate support at a location radially outward from an outer periphery of a substrate seated on the substrate support. A semiconductor processing system and a material layer deposition method are also described.

公开(公告)号：US20240040672A1

公开(公告)日：2024-02-01

申请号：US17875036

申请日：2022-07-27

申请人： Applied Materials, Inc.

发明人： Sathya Shrinivas CHARY

IPC分类号： H05B3/84 ,  C23C16/48 ,  H05B1/02 ,  H05B3/03 ,  H05B3/06

CPC分类号： H05B3/84 ,  C23C16/481 ,  H05B1/0233 ,  H05B3/03 ,  H05B3/06 ,  C23C16/482 ,  H05B3/0047

摘要： A method and apparatus for heating a transparent component within a semiconductor processing chamber is described. The transparent component is heated using a transparent heater coupled to the transparent component. The transparent heater includes a support base, an electrode layer, and a capping layer. The electrode layer is a heating element. The transparent heater has an optical transparency of greater than about 80% at a wavelength which is emitted by one or more radiation sources within the processing chamber. The transparent heater is a flexible transparent heater or is formed of a plurality of sub-heaters.

公开(公告)号：US20240011150A1

公开(公告)日：2024-01-11

申请号：US18475068

申请日：2023-09-26

申请人： ASML Netherlands B.V.

发明人： Sonia CASTELLANOS ORTEGA ,  Jan VERHOEVEN ,  Joost Wilhelmus Maria FRENKEN ,  Pavlo ANTONOV ,  Nicolaas TEN KATE ,  Olivier Christian Maurice LUGIER

IPC分类号： C23C16/04 ,  C23C16/26 ,  C23C16/48

CPC分类号： C23C16/047 ,  C23C16/26 ,  C23C16/482 ,  C23C16/483 ,  H01L21/02527

摘要： Methods and apparatus for forming a patterned layer of carbon are disclosed. In one arrangement, a selected portion of a surface of a solid structure is irradiated with extreme ultraviolet radiation in the presence of a carbon-containing precursor. The radiation interacts with the solid structure in the selected portion to cause formation of a layer of carbon in the selected portion from the carbon-containing precursor. The layer of carbon is formed in a pattern defined by the selected portion.

公开(公告)号：US11807937B2

公开(公告)日：2023-11-07

申请号：US16969088

申请日：2019-02-26

申请人： ASML Netherlands B.V.

发明人： Sonia Castellanos Ortega ,  Jan Verhoeven ,  Joost Wilhelmus Maria Frenken ,  Pavlo Antonov ,  Nicolaas Ten Kate ,  Olivier Christian Maurice Lugier

IPC分类号： C23C16/04 ,  C23C16/26 ,  C23C16/48 ,  H01L21/02 ,  H01L29/16

CPC分类号： C23C16/047 ,  C23C16/26 ,  C23C16/482 ,  C23C16/483 ,  H01L21/02527 ,  H01L21/02636 ,  H01L29/1606

摘要： Methods and apparatus for forming a patterned layer of carbon are disclosed. In one arrangement, a selected portion of a surface of a solid structure is irradiated with extreme ultraviolet radiation in the presence of a carbon-containing precursor. The radiation interacts with the solid structure in the selected portion to cause formation of a layer of carbon in the selected portion from the carbon-containing precursor. The layer of carbon is formed in a pattern defined by the selected portion.

公开(公告)号：US20230335392A1

公开(公告)日：2023-10-19

申请号：US18300301

申请日：2023-04-13

申请人： ASM IP HOLDING B.V.

发明人： Shinya Yoshimoto ,  Jhoelle Roche Guhit ,  Makoto Igarashi ,  Hideaki Fukuda ,  Aurelie Kuroda ,  Timothee Blanquart ,  Takahiro Onuma

IPC分类号： H01L21/02 ,  C23C16/36 ,  C23C16/455 ,  C23C16/48 ,  C23C16/52

CPC分类号： H01L21/02167 ,  C23C16/36 ,  C23C16/4554 ,  C23C16/482 ,  C23C16/52 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348

摘要： In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processors for gap-fill in which deposition is followed by a thermal anneal and ultraviolet treatment and repeated. In some embodiments, the deposition, thermal anneal, and ultraviolet treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for curing.

公开(公告)号：US20230279544A1

公开(公告)日：2023-09-07

申请号：US18023814

申请日：2021-09-02

申请人： TCM Research Ltd.

发明人： Dmitri S. Terekhov

IPC分类号： C23C16/44 ,  C23C16/01 ,  C23C16/48 ,  C23C16/458 ,  B33Y10/00 ,  B33Y30/00

CPC分类号： C23C16/4418 ,  C23C16/01 ,  C23C16/483 ,  C23C16/458 ,  B33Y10/00 ,  B33Y30/00

摘要： A system for additive chemical vapor deposition (CVD) and (CVD) methods for producing free-standing 3D metal deposits with a controlled crystal size, the method comprising a) supplying a CVD mixture containing at least one CVD precursor into a deposition chamber having a rotatable mandrel with a deposition surface or a deposition table with a deposition surface; b) generating a radiation pattern in at least two programmable radiation modules, each programmable radiation module containing an array of individually addressable radiation transmitting and/or radiation emitting elements; and c) irradiating the deposition surface with a first radiation pattern from a first radiation module and a second radiation pattern from a second radiation module, wherein the first radiation module irradiates the deposition surface in a first direction and the second radiation module irradiates the deposition surface in a second direction, and depositing a material from the CVD mixture on the deposition surface.

公开(公告)号：US20230203662A1

公开(公告)日：2023-06-29

申请号：US18065740

申请日：2022-12-14

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  National University Corporation Kyoto Institute of Technology

发明人： TATSUJI NAGAOKA ,  HIROYUKI NISHINAKA ,  MASAHIRO YOSHIMOTO

IPC分类号： C23C16/54 ,  C23C16/52 ,  C23C16/44 ,  C23C16/448 ,  C23C16/48

CPC分类号： C23C16/54 ,  C23C16/52 ,  C23C16/4412 ,  C23C16/4481 ,  C23C16/4486 ,  C23C16/481

摘要： A film formation apparatus includes a stage for having a substrate thereon; a mist generation source that generates a mist of a solution containing at least water and in which a material for forming a film on the substrate is dissolved; a supply path that conveys the mist toward the substrate on the stage by a flow of a carrier gas; and a heater that heats at least a part of the supply path. The part of the supply path heated by the heater is provided as a mist heating section in which infrared rays are radiated from an inner surface of the supply path toward the mist. The inner surface of the supply path in the mist heating section is coated with a coating layer containing at least one of an oxide and a hydroxide of an element present in the mist.