公开(公告)号：US20240279811A1

公开(公告)日：2024-08-22

申请号：US18264649

申请日：2022-02-07

Applicant: AGC GLASS EUROPE

Inventor： Gregory ARNOULT

IPC: C23C16/503 ,  C23C16/54 ,  D06M10/10 ,  D06M101/32 ,  D06M101/36 ,  H05H1/48

CPC classification number: C23C16/503 ,  C23C16/545 ,  D06M10/10 ,  H05H1/481 ,  D06M2101/32 ,  D06M2101/36 ,  D06M2200/12 ,  H05H2245/42

Abstract: A hollow cathode plasma polymerization process applied to fabric substrates, in particular to methods, to apply a halogen-free, in particular fluorine-free, water repellent polymer coating, in particular durable water repellent coatings, to a fabric substrate as well as the products obtainable by such methods and systems.

公开(公告)号：US20240117563A1

公开(公告)日：2024-04-11

申请号：US18264702

申请日：2022-02-07

Applicant: AGC GLASS EUROPE

Inventor： Hansjoerg WEIS ,  Jérôme JOLIBOIS

IPC: D06N3/00 ,  C23C16/02 ,  C23C16/04 ,  C23C16/503 ,  D06M10/02 ,  D06M10/10 ,  D06M15/277 ,  D06N3/04

CPC classification number: D06N3/0084 ,  C23C16/02 ,  C23C16/045 ,  C23C16/503 ,  D06M10/025 ,  D06M10/10 ,  D06M15/277 ,  D06N3/0011 ,  D06N3/0086 ,  D06N3/047 ,  D06M2101/32 ,  D06N2201/02 ,  D06N2207/14 ,  D06N2209/142

Abstract: A process for producing a fluorinated polymer coating on a fabric substrate, including providing a first plasma source containing at least one pair of hollow-cathode plasma generating electrodes, injecting a first plasma generating gas in the at least one pair of hollow-cathode plasma generating electrodes, applying a first electrical power to the first plasma source, injecting a fluorinated monomer with an inert carrier gas between the at least one pair of hollow-cathode plasma generating electrodes, and depositing the fluorinated polymer coating on a surface of the fabric substrate by exposing the fabric substrate to the plasma of the first plasma source. The fluorinated polymer coating is water repellent.

公开(公告)号：US20220220615A1

公开(公告)日：2022-07-14

申请号：US17144886

申请日：2021-01-08

Applicant: SKY TECH INC.

Inventor： JING-CHENG LIN ,  CHUN-FU WANG

IPC: C23C16/458 ,  C23C16/503

Abstract: The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.

公开(公告)号：US11322348B2

公开(公告)日：2022-05-03

申请号：US17141935

申请日：2021-01-05

Applicant: Miin-Jang Chen

Inventor： Miin-Jang Chen ,  Chen-Yang Chung

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/56 ,  H01L29/51 ,  C23C16/503 ,  C23C16/40

Abstract: A multi-function equipment implements a method of fabricating a thin film. The multi-function equipment according to the invention includes a reaction chamber, a plasma source, a plasma source power generating unit, a bias electrode, an AC (Alternating Current) voltage generating unit, a DC (Direct current) bias generating unit, a metal chuck, a first precursor supply source, a second precursor supply source, a carrier gas supply source, an oxygen supply source, a nitrogen supply source, an inert gas supply source, an automatic pressure controller, and a vacuum pump.

公开(公告)号：US20220130647A1

公开(公告)日：2022-04-28

申请号：US17507776

申请日：2021-10-21

Applicant: EUGENE TECHNOLOGY CO., LTD.

Inventor： Jeong Hee JO ,  Chang Dol KIM

IPC: H01J37/32 ,  C23C16/503

Abstract: Provided is a batch type substrate processing apparatus that supplies a process gas decomposed in a discharge space, which is distinguished from a processing space, into the processing space. The batch type substrate processing apparatus includes a reaction tube configured to provide a processing space, a plasma forming part having a discharge space, which is distinguished from the processing space by a partition wall and generating plasma in the discharge space by a plurality of electrodes extending along a longitudinal direction of the reaction tube. The plurality of electrodes includes a plurality of power supply electrodes spaced apart from each other and a plurality of ground electrodes provided between the plurality of power supply electrodes.

公开(公告)号：US11244808B2

公开(公告)日：2022-02-08

申请号：US15858789

申请日：2017-12-29

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065 ,  C23C16/503 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  H01L21/67

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas.

公开(公告)号：US10984990B2

公开(公告)日：2021-04-20

申请号：US15955290

申请日：2018-04-17

Applicant: Applied Materials, Inc.

Inventor： Ramesh Bokka ,  Jason M. Schaller ,  Jay D. Pinson, II ,  Luke Bonecutter

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/50 ,  H01L21/67 ,  H01L21/683 ,  C23C16/503 ,  C23C16/517 ,  C23C16/509 ,  C23C16/46

Abstract: A plasma processing apparatus is provided including a radio frequency power source; a direct current power source; a chamber enclosing a process volume; and a substrate support assembly disposed in the process volume. The substrate support assembly includes a substrate support having a substrate supporting surface; an electrode disposed in the substrate support; and an interconnect assembly coupling the radio frequency power source and the direct current power source with the electrode.

公开(公告)号：US10774423B2

公开(公告)日：2020-09-15

申请号：US14552273

申请日：2014-11-24

Applicant: Applied Materials, Inc.

Inventor： Karthik Janakiraman ,  Thomas Nowak ,  Juan Carlos Rocha-Alvarez ,  Mark A. Fodor ,  Dale R. Du Bois ,  Amit Bansal ,  Mohamad Ayoub ,  Eller Y. Juco ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/44 ,  C23C16/503 ,  C23C16/505 ,  H01J37/32 ,  C23C16/509

Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.

公开(公告)号：US10580624B2

公开(公告)日：2020-03-03

申请号：US14148606

申请日：2014-01-06

Applicant: AGC Flat Glass North America, Inc. ,  Asahi Glass Co., Ltd. ,  AGC Glass Europe S.A.

Inventor： Peter Maschwitz

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32 ,  C23C16/40 ,  C23C16/455 ,  C23C16/503 ,  H05H1/24 ,  C03C17/245 ,  C23C16/513 ,  H05H1/42 ,  H05H1/46

Abstract: The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention provides novel linear and two dimensional plasma sources that produce linear and two dimensional plasmas, respectively, that are useful for plasma-enhanced chemical vapor deposition. The present invention also provides methods of making thin film coatings and methods of increasing the coating efficiencies of such methods.

公开(公告)号：US20200058473A1

公开(公告)日：2020-02-20

申请号：US16610391

申请日：2018-04-27

Applicant: AGC GLASS EUROPE ,  AGC Inc. ,  AGC GLASS COMPANY NORTH AMERICA ,  AGC VIDROS DO BRASIL LTDA

Inventor： Hugues WIAME ,  John CHAMBERS ,  Marc DATZ

IPC: H01J37/32 ,  C23C16/503

Abstract: The present invention relates to an electrode pair for generating a linear plasma wherein the electrodes (21, 22) are segmented. More particularly, the present invention relates to a plasma source, for instance a hollow-cathode plasma source, comprising one or more plasma-generating electrode pairs wherein the electrodes are segmented. The present invention further relates to methods for controlling the uniformity of a linear plasma and also to methods for surface treating or coating substrates in a uniform way with linear plasma sources.