公开(公告)号：US12227834B2

公开(公告)日：2025-02-18

申请号：US17257766

申请日：2019-06-18

Applicant: DIAROTECH

Inventor： Horacio Tellez Oliva

IPC: C23C16/27 ,  C23C16/503 ,  C23C16/509 ,  C23C16/517 ,  H01J37/32

Abstract: Synthesis methods for performed by chemical vapor deposition are improved, particularly for diamond synthesis. The time required for depositing diamond layers is reduced by compressing the plasma near the deposition substrate to increase the chances of collision between active species.

公开(公告)号：US20250029817A1

公开(公告)日：2025-01-23

申请号：US18909926

申请日：2024-10-08

Applicant: JUSUNG ENGINEERING CO., LTD.

Inventor： WOONG KYO OH ,  Young Woon KIM ,  Kwang Su YOO ,  Won Tae CHO ,  Chul Joo HWANG

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/509 ,  H01L21/67

Abstract: The present invention relates to a substrate processing apparatus including: a chamber; a first electrode disposed on the chamber; a second electrode disposed under the first electrode, the second electrode including a plurality of openings; a plurality of protrusion electrodes extending from the first electrode to the plurality of openings of the second electrode; a substrate supporter being opposite to the second electrode and supporting a substrate; a first discharging region between a lower surface of the first electrode and an upper surface of the second electrode; a second discharging region between a side surface of the protrusion electrode and an opening inner surface of the second electrode; a third discharging region between a lower surface of the protrusion electrode and the opening inner surface of the second electrode; and a fourth discharging region between the second electrode and the substrate, wherein plasma is generated in at least one region of the first to fourth discharging regions.

公开(公告)号：US20240355593A1

公开(公告)日：2024-10-24

申请号：US18136276

申请日：2023-04-18

Applicant: Tokyo Electron Limited

Inventor： Melvin Verbaas ,  Einosuke Tsuda

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  C23C16/52 ,  H01L21/683

CPC classification number: H01J37/32715 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32568 ,  H01L21/6833 ,  H01J37/32082 ,  H01J2237/002 ,  H01J2237/2007

Abstract: An electrostatic chuck (ESC) for holding a workpiece in a plasma processing chamber, where the ESC includes a monolithic insulating substrate with a top surface; a plurality of electrodes embedded in the insulating substrate, the plurality of electrodes being in a multipolar configuration to receive multiple DC bias signals from a first power supply circuit; and a radio frequency (RF) electrode embedded in the insulating substrate, the plurality of electrodes being located between the top surface and the RF electrode, the RF electrode including a contact node configured to be coupled to a second power supply circuit configured to generate an RF signal.

公开(公告)号：US20240249923A1

公开(公告)日：2024-07-25

申请号：US18624655

申请日：2024-04-02

Applicant: Kokusai Electric Corporation

Inventor： Akihiro SATO ,  Tsuyoshi Takeda ,  Yukitomo Hirochi

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01L21/02 ,  H05H1/46

CPC classification number: H01J37/32568 ,  C23C16/4587 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32834 ,  H01L21/0217 ,  H01L21/02274 ,  H05H1/46 ,  H01J2237/327 ,  H01J2237/3323 ,  H01L21/02211 ,  H01L21/0228

Abstract: There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.

公开(公告)号：US20240242940A1

公开(公告)日：2024-07-18

申请号：US18401848

申请日：2024-01-02

Applicant: Kioxia Corporation

Inventor： Takuya HIROHASHI

IPC: H01J37/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  H01L21/02

CPC classification number: H01J37/32458 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45557 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/509 ,  H01J37/3244 ,  H01L21/02274 ,  H01J2237/3321 ,  H01L21/02164 ,  H01L21/0217

Abstract: An apparatus includes a process chamber, a stage, a shower head, a plasma generation circuit, and a partition wall. The stage places a substrate. The shower head faces the stage and supplies process gas to the substrate. The plasma generation circuit generates plasma between the shower head and the stage. The partition wall isolates a first space between the shower head and the stage from a second space on a side of the shower head opposite to a side of the stage with a predetermined first gap, such that a pressure in the second space is higher than a pressure in the first space in a state where the process gas is supplied from the shower head, a gas different from the process gas is supplied to the second space, and an inside of the first space is evacuated.

公开(公告)号：US12009186B2

公开(公告)日：2024-06-11

申请号：US16625459

申请日：2018-06-19

Applicant: MEYER BURGER (GERMANY) GMBH

Inventor： Hermann Schlemm ,  Mirko Kehr ,  Erik Ansorge ,  Sebastian Raschke

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/509

CPC classification number: H01J37/32743 ,  C23C16/4586 ,  C23C16/509

Abstract: The invention relates to an apparatus for transporting a substrate into or out of a treatment apparatus, to a treatment apparatus, to a method of processing a substrate and to a treatment system having a movement arrangement for moving such an apparatus for transporting a substrate. In this case, the apparatus for transporting a substrate has a substrate carrier that includes a horizontally extending holding area and one or a plurality of gripping arms. The holding area is even and uniform on a first surface facing the substrate, the shape of said holding area substantially corresponding to the shape of the substrate and the area size of said holding area being substantially the same as the area size of the substrate, the substrate being held with its rear side on the holding area merely by its weight. The treatment apparatus has a receiving plate on which the substrate is held during the treatment, the receiving plate having a recess that is suitable for receiving such a substrate carrier during the treatment of the substrate in a first surface.

公开(公告)号：US20240158942A1

公开(公告)日：2024-05-16

申请号：US18414914

申请日：2024-01-17

Applicant: ASM IP Holding B.V.

Inventor： Yong Min Yoo ,  Seung Woo Choi ,  Dong Seok Kang ,  Jong Won Shon

IPC: C25D11/04 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  C25D11/02 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687

CPC classification number: C25D11/04 ,  C23C16/4404 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/4583 ,  C23C16/5096 ,  C25D11/022 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68757 ,  H01J37/32477

Abstract: A substrate supporting plate that may prevent deposition on a rear surface of a substrate and may easily unload the substrate. The substrate supporting plate may include a substrate mounting portion and a peripheral portion surrounding the substrate mounting portion. An edge portion of a top surface of the substrate mounting portion may be anodized. A central portion of the top surface of the substrate mounting portion may not be anodized.

公开(公告)号：US11967492B2

公开(公告)日：2024-04-23

申请号：US17495796

申请日：2021-10-06

Applicant: AP SYSTEMS INC.

Inventor： Byoung Il Lee ,  Chang Kyo Kim ,  Chang Min Kwon ,  Seung Won Yu

IPC: H01J37/32 ,  C23C16/509

CPC classification number: H01J37/32899 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32568

Abstract: The present disclosure relates to a thin film manufacturing apparatus including a chamber having an inner process space of a substrate, a substrate support unit connected to the chamber to support the substrate in the chamber, a heat source unit connected to the chamber and disposed opposite to the substrate support unit, a plasma generation unit connected to one side of the chamber to supply radicals between the substrate support unit and the heat source unit, and a baffle connected to the chamber and including a movement passage of the radicals therein and a plurality of first exhaust holes communicating with the movement passage, which are formed in a top surface thereof. The thin film manufacturing apparatus may improve uniformity of the thin film formed on the substrate.

公开(公告)号：US11887811B2

公开(公告)日：2024-01-30

申请号：US17014177

申请日：2020-09-08

Applicant: Applied Materials, Inc.

Inventor： Khokan Chandra Paul ,  Ravikumar Patil

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  C23C16/458 ,  C23C16/509 ,  H01L21/687

CPC classification number: H01J37/32091 ,  C23C16/4586 ,  C23C16/509 ,  H01J37/32715 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68742 ,  H01J2237/2007 ,  H01J2237/20235

Abstract: Exemplary semiconductor substrate supports may include a pedestal having a shaft and a platen. The semiconductor substrate supports may include a cover plate. The cover plate may be coupled with the platen along a first surface of the cover plate. The cover plate may define a recessed channel in a second surface of the cover plate opposite the first surface. The semiconductor substrate supports may include a puck coupled with the second surface of the cover plate. The puck may incorporate an electrode. The puck may define a plurality of apertures extending vertically through the puck to fluidly access the recessed channel defined in the cover plate.

公开(公告)号：US11832533B2

公开(公告)日：2023-11-28

申请号：US17645178

申请日：2021-12-20

Applicant: Lam Research Corporation

Inventor： James Samuel Sims ,  Andrew John McKerrow ,  Meihua Shen ,  Thorsten Lill ,  Shane Tang ,  Kathryn Merced Kelchner ,  John Hoang ,  Alexander Dulkin ,  Danna Qian ,  Vikrant Rai

IPC: H10N70/00 ,  H01L21/67 ,  H01L21/02 ,  C23C16/34 ,  C23C16/509 ,  C23C16/455 ,  H10N50/01 ,  H10N70/20 ,  H10N50/00

CPC classification number: H10N70/011 ,  C23C16/34 ,  C23C16/4554 ,  C23C16/509 ,  H01L21/022 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/67167 ,  H10N50/00 ,  H10N70/231 ,  H10N70/826 ,  H10N70/882

Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.