公开(公告)号：US12060641B2

公开(公告)日：2024-08-13

申请号：US17577656

申请日：2022-01-18

申请人： Tokyo Electron Limited

发明人： Hirokazu Ueda ,  Hideki Yuasa ,  Yutaka Fujino ,  Yoshiyuki Kondo ,  Hiroyuki Ikuta

IPC分类号： C23C16/455 ,  C23C16/34 ,  C23C16/36 ,  C23C16/511 ,  H01J37/32 ,  H01L21/02

CPC分类号： C23C16/45536 ,  C23C16/345 ,  C23C16/36 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32449 ,  H01L21/02274 ,  H01J2237/332 ,  H01L21/02167 ,  H01L21/0217

摘要： A film forming method includes: placing a substrate on which a pattern, which includes a plurality of convex and concave portions, is formed on a stage disposed inside a chamber; and selectively forming a silicon-containing film on the plurality of convex portions of the pattern by applying a bias power to the stage and introducing microwaves into the chamber while supplying a processing gas containing a silicon-containing gas and a nitrogen-containing gas into the chamber to generate plasma, wherein the selectively forming the silicon-containing film includes a first film formation of forming a silicon-containing film around upper sides of the plurality of convex portions and a second film formation of forming a silicon-containing film on upper portions of the plurality of convex portions.

公开(公告)号：US20240240311A1

公开(公告)日：2024-07-18

申请号：US18416325

申请日：2024-01-18

申请人： Versitech Limited ,  Southern University of Science and Technology ,  Dongguan Institute of Opto-electronics, Peking University

发明人： Zhiqin CHU ,  Tongtong ZHANG ,  Qi WANG ,  Zhongqiang WANG ,  Kwai Hei LI

IPC分类号： C23C16/44 ,  C23C16/02 ,  C23C16/27 ,  C23C16/511 ,  C23C16/56

CPC分类号： C23C16/4417 ,  C23C16/0227 ,  C23C16/274 ,  C23C16/511 ,  C23C16/56

摘要： The present invention provides a scalable method for achieving shape control of diamond micro-nanoparticles, comprising air oxidizing diamond micro-nanoparticles grown by chemical vapor deposition and/or diamond micro-nanoparticles grown by high pressure and high temperature. The present invention achieves the controllable morphology transformation of diamond micro-nanoparticles via air oxidation treatment. It has been demonstrated that a series of unique shapes, including “flower” shaped, “hollow” structured, “pyramid” patterned on the surface, and “boomerang” shaped, can be achieved by altering the air oxidation parameters, i.e., temperature and duration. The scalable production of these differently shaped diamond micro-nanoparticles represents a significant scientific breakthrough together with a high commercial value. The ability to produce diamond particles with desired shapes simply and cost-effectively will remove many obstacles to using diamonds for practical applications in nanophotonics, quantum computing, quantum optics, etc.

公开(公告)号：US20240186118A1

公开(公告)日：2024-06-06

申请号：US18419389

申请日：2024-01-22

申请人： Applied Materials, Inc.

发明人： JAMES CARDUCCI ,  RICHARD C. FOVELL ,  LARRY D. ELIZAGA ,  SILVERST RODRIGUES ,  VLADIMIR KNYAZIK ,  PHILIP ALLAN KRAUS ,  THAI CHENG CHUA

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/511

CPC分类号： H01J37/3244 ,  C23C16/45559 ,  C23C16/45561 ,  C23C16/511 ,  H01J2237/3321 ,  H01J2237/334 ,  H01J2237/335

摘要： Embodiments disclosed herein include a housing for a source array. In an embodiment, the housing comprises a conductive body, where the conductive body comprises a first surface and a second surface opposite from the first surface. In an embodiment a plurality of openings are formed through the conductive body and a channel is disposed into the second surface of the conductive body. In an embodiment, a cover is over the channel, and the cover comprises first holes that pass through a thickness of the cover. In an embodiment, the housing further comprises a second hole through a thickness of the conductive body. In an embodiment, the second hole intersects with the channel.

公开(公告)号：US20240158910A1

公开(公告)日：2024-05-16

申请号：US18109873

申请日：2023-02-15

申请人： Wuhan Youmeike Automation Co., Ltd

发明人： Zhiwen KANG ,  Bingfeng CAI ,  Kangfu GUO

IPC分类号： C23C16/27 ,  C23C16/511 ,  H01J37/32

CPC分类号： C23C16/274 ,  C23C16/511 ,  H01J37/32256 ,  H01J2237/3321

摘要： A microwave plasma chemical vapor deposition device, including a microwave generator, an isolator, a 3-stub microwave tuner, a microwave mode converter, and a short-circuiting waveguide tuner connected successively is disclosed. A microwave antenna and an upper cooling air inlet stretching into a microwave cavity and corresponding to the upper side of a quartz window are arranged on the microwave mode converter, the quartz window located in the microwave cavity is arranged below the microwave mode converter, a metal molybdenum stage is arranged on a sample stage in the microwave cavity, and a cooling water channel is arranged on the microwave cavity. The structure of the cavity, the sealing structure of the quartz window, heat dissipation and the like of the microwave plasma chemical vapor deposition device disclosed by the present invention are improved, so that the product quality of a diamond film produced by deposition is improved.

公开(公告)号：US11956884B2

公开(公告)日：2024-04-09

申请号：US17747068

申请日：2022-05-18

申请人： Draka Comteq B.V.

发明人： Igor Milicevic ,  Mattheus Jacobus Nicolaas Van Stralen ,  Gertjan Krabshuis ,  Antonius Henricus Elisabeth Breuls

IPC分类号： H05H1/46 ,  C23C16/40 ,  C23C16/511

CPC分类号： H05H1/461 ,  C23C16/402 ,  C23C16/511 ,  H05H2245/42

摘要： The invention relates to a plasma chemical vapor deposition (PCVD) apparatus for deposition of one or more layers of silica onto an interior wall of an elongated hollow glass substrate tube. The apparatus comprises a microwave generator, a plasma generator receiving microwaves from said generator in use, a cylindrical cavity extending through said generator, and a cylindrical liner positioned in the cavity. The substrate tube passes through the liner in use. The cylindrical liner has at least one section having a reduced inner diameter over a part of the length of the liner, the at least one section providing a contact zone for the substrate tube. The microwave generator is configured to generate microwaves having a wavelength Lw in the range of 40 to 400 millimeters, wherein a length of said at least one section having the reduced inner diameter is at most 0.1×Lw.

公开(公告)号：US11942308B2

公开(公告)日：2024-03-26

申请号：US17229122

申请日：2021-04-13

申请人： TOKYO ELECTRON LIMITED

发明人： Yasuaki Taniike

IPC分类号： H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/458 ,  C23C16/511 ,  H01L21/02 ,  H01L21/66

CPC分类号： H01J37/3222 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/511 ,  H01J37/32311 ,  H01L21/02274 ,  H01L21/0228 ,  H01L22/34

摘要： A microwave plasma source that generates a microwave plasma in a processing space in which a target substrate is processed, includes: a microwave generation part for generating microwave; a waveguide through which the microwave generated by the microwave generation part propagates; an antenna part including a slot antenna having a predetermined pattern of slots formed therein and being configured to radiate the microwave propagating through the waveguide into the processing space and a microwave-transmitting plate being made of a dielectric material and being configured to transmit the microwave radiated from the slots therethrough and supply the microwave into the processing space; a temperature detector for detecting a temperature at a predetermined position in a microwave propagation path leading to the slot antenna; and an abnormality detection part for receiving the temperature detected by the temperature detector and detect an abnormality in the microwave propagation path based on the detected temperature.

公开(公告)号：US11894227B2

公开(公告)日：2024-02-06

申请号：US17586505

申请日：2022-01-27

申请人： Novellus Systems, Inc.

发明人： Bhadri N. Varadarajan ,  Bo Gong ,  Zhe Gui

IPC分类号： H01L21/02 ,  C23C16/505 ,  C23C16/511 ,  C23C16/32 ,  C23C16/452 ,  H01L29/49 ,  H01L21/768 ,  C23C16/04

CPC分类号： H01L21/02167 ,  C23C16/045 ,  C23C16/325 ,  C23C16/452 ,  C23C16/505 ,  C23C16/511 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/76831 ,  H01L21/76834 ,  H01L29/4983 ,  H01L29/4991 ,  H01L21/7682 ,  H01L2221/1047

摘要： Disclosed are methods and systems for providing silicon carbide films. A layer of silicon carbide can be provided under process conditions that employ one or more silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors may also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the silicon carbide film. The one or more radical species can be formed in a remote plasma source.

公开(公告)号：US11881384B2

公开(公告)日：2024-01-23

申请号：US16586482

申请日：2019-09-27

申请人： Applied Materials, Inc.

发明人： James Carducci ,  Richard C. Fovell ,  Larry D. Elizaga ,  Silverst Rodrigues ,  Vladimir Knyazik ,  Philip Allan Kraus ,  Thai Cheng Chua

IPC分类号： H01J37/32 ,  C23C16/511 ,  C23C16/455

CPC分类号： H01J37/3244 ,  C23C16/45559 ,  C23C16/45561 ,  C23C16/511 ,  H01J2237/334 ,  H01J2237/335 ,  H01J2237/3321

摘要： Embodiments disclosed herein include a housing for a source array. In an embodiment, the housing comprises a conductive body, where the conductive body comprises a first surface and a second surface opposite from the first surface. In an embodiment a plurality of openings are formed through the conductive body and a channel is disposed into the second surface of the conductive body. In an embodiment, a cover is over the channel, and the cover comprises first holes that pass through a thickness of the cover. In an embodiment, the housing further comprises a second hole through a thickness of the conductive body. In an embodiment, the second hole intersects with the channel.

公开(公告)号：US11859279B2

公开(公告)日：2024-01-02

申请号：US16467828

申请日：2017-12-08

申请人： DIAM CONCEPT

发明人： Alix Gicquel ,  François Des Portes

IPC分类号： C23C16/511 ,  C23C16/27 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/20 ,  C30B29/04 ,  H01J37/32

CPC分类号： C23C16/274 ,  C23C16/4586 ,  C23C16/45563 ,  C23C16/466 ,  C23C16/511 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/20 ,  C30B29/04 ,  H01J37/3244 ,  H01J37/32201 ,  H01J37/32247 ,  H01J37/32458 ,  H01J37/32513 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32834 ,  H01J2237/20214 ,  H01J2237/20235 ,  H01J2237/332

摘要： The invention relates to a microwave plasma-assisted deposition modular reactor for manufacturing synthetic diamond. The reactor has at least three modulation elements selected from: a crown adapted to be positioned between a first enclosure part and a second enclosure part; a substrate holder module mobile in vertical translation and in rotation, in contact with a quarter-wave and including at least one fluid cooling system; a tray mobile in vertical translation in order to change the shape and volume of the resonant cavity and including through openings allowing the gases to pass; a gas distribution module, including a removable gas distribution plate comprising an inner surface, an outer surface, and a plurality of gas distribution nozzles forming channels between said surfaces capable of conducting a gas flow, and a support device connected to a cooling system and adapted to accommodate the removable gas distribution plate; and a substrate cooling control module including a removable thermal resistance gas injection device.

公开(公告)号：US20230392255A1

公开(公告)日：2023-12-07

申请号：US18328726

申请日：2023-06-03

申请人： Plasmability, LLC.

发明人： William Holber

IPC分类号： C23C16/27 ,  H01J37/32 ,  C23C16/505 ,  C23C16/52 ,  C23C16/46 ,  C23C16/458 ,  C23C16/511

CPC分类号： C23C16/272 ,  H01J37/32201 ,  H01J37/321 ,  C23C16/505 ,  C23C16/52 ,  C23C16/463 ,  C23C16/4581 ,  C23C16/511 ,  C23C16/274 ,  H01J2237/3321

摘要： A plasma chemical vapor deposition system for growing diamond and diamond-like materials includes a process chamber having an exhaust port that is coupled to an input of a vacuum pump. A plasma generator generates a plasma in the process chamber. A cooling stage is positioned in the process chamber with a substrate holder positioned on a top surface that is configured to mount one or more substrates so they are exposed to the plasma generated by the plasma generator. The substrate holder defines a plenum having one or more portions. One or more pressure controllers are each configured to control a pressure in one of the first and second portion of the plenum so as to control a relative temperature of adjacent portions of the substrate holder.