公开(公告)号：US20240352576A1

公开(公告)日：2024-10-24

申请号：US18761445

申请日：2024-07-02

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore

IPC: C23C16/04 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/285

CPC classification number: C23C16/045 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/28556

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US12077863B2

公开(公告)日：2024-09-03

申请号：US18372123

申请日：2023-09-24

Applicant: SPTS Technologies Limited

Inventor： Stephen Burgess ,  Kathrine Crook ,  Daniel Archard ,  William Royle ,  Euan Alasdair Morrison

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/513

CPC classification number: C23C16/513 ,  C23C16/455

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.

公开(公告)号：US11987879B2

公开(公告)日：2024-05-21

申请号：US17673667

申请日：2022-02-16

Applicant: Applied Materials, Inc.

Inventor： Armin Saeedi Vahdat ,  Yan Zhang ,  John Hautala

IPC: H01L21/306 ,  C23C14/48 ,  C23C16/30 ,  C23C16/40 ,  C23C16/513 ,  C23C28/04 ,  H01L21/3065

CPC classification number: C23C16/303 ,  C23C14/48 ,  C23C16/40 ,  C23C16/513 ,  C23C28/04 ,  H01L21/30604 ,  H01L21/30621 ,  H01L21/3065

Abstract: Disclosed are approaches for forming semiconductor device cavities. One method may include providing a set of semiconductor structures defining an opening, wherein the opening has a first opening width along an upper portion of the opening and a second opening width along a lower portion of the opening, the first opening width being greater than the second opening width. The method may further include forming a blocking layer along the set of semiconductor structures by delivering a material at a non-zero angle of inclination relative to a normal extending perpendicular from a top surface of the set of semiconductor structures. The blocking layer may be formed along the upper portion of the opening without being formed along the lower portion of the opening, and wherein an opening through the blocking layer is present above the opening.

公开(公告)号：US20240158918A1

公开(公告)日：2024-05-16

申请号：US18237455

申请日：2023-08-24

Applicant: UNIVERSITIES SPACE RESEARCH ASSOCIATION

Inventor： Ramprasad Gandhiraman ,  Meyya Meyyappan ,  Jessica E. Koehne

IPC: C23C16/513 ,  B33Y10/00 ,  B33Y30/00 ,  C23C16/44 ,  C23C16/52 ,  H05H1/24 ,  H05H1/42

CPC classification number: C23C16/513 ,  B33Y10/00 ,  B33Y30/00 ,  C23C16/4401 ,  C23C16/52 ,  H05H1/2406 ,  H05H1/42 ,  H05H1/246

Abstract: Systems and methods for highly reproducible and focused plasma jet printing and patterning of materials using appropriate ink containing aerosol through nozzles with narrow orifice and tubes with controlled dielectric constant connected to high voltage power supply, in the presence of electric field and plasma, that enables morphological and/or bulk chemical modification and/or surface chemical modification of the material in the aerosol and/or the substrate prior to printing, during printing and post printing.

公开(公告)号：US20240117493A1

公开(公告)日：2024-04-11

申请号：US18264619

申请日：2022-02-09

Applicant: Oerlikon Surface Solutions AG, Pfäffikon

Inventor： Othmar ZÜGER

IPC: C23C16/513 ,  C23C16/52

CPC classification number: C23C16/513 ,  C23C16/52 ,  H01J37/32064

Abstract: A method to stabilize position and shape of a plasma beam established between a cathode and an anode, where an electrical field is established between the cathode and the anode and where the shortest electrical field line between the cathode and the anode defines a reference line, wherein at least one oriented electromagnetic coil is provided and the at least one oriented electromagnetic coil has its coil axis oriented in a non-colinear manner to the reference line in such a way that at least one of the straight lines which are intersecting both of the coil openings and which are parallel to the coil axis intersects with the reference line and where a current is sent through the at least one oriented electromagnetic coil in order to establish a magnetic field which is used to deflect or attract the plasma beam.

公开(公告)号：US20240117487A1

公开(公告)日：2024-04-11

申请号：US18056800

申请日：2022-11-18

Applicant: National Applied Research Laboratories

Inventor： Shu-Ju Tsai ,  Yi-Cheng Lin

IPC: C23C16/26 ,  C23C16/48 ,  C23C16/513 ,  H01L21/02

CPC classification number: C23C16/26 ,  C23C16/48 ,  C23C16/513 ,  H01L21/02115 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0254 ,  H01L21/02568 ,  H01L21/02595 ,  H01L21/02598

Abstract: A 2D layered thin film structure is disclosed. The 2D layered thin film structure can be applied to the growth of monocrystalline or polycrystalline group III nitrides and other 2D materials. The 2D layered thin film structure can be easily separated from the 2D layered thin film structure growth substrate, so that a single or composite nanopillar array structure formed by the monocrystalline or polycrystalline group III nitride or other 2D materials, or the 2D layered thin film structure can be transferred to any other substrate. In addition, the 2D layered thin film structure has excellent light transmittance, flexibility and component integration.

公开(公告)号：US20230416921A1

公开(公告)日：2023-12-28

申请号：US18459809

申请日：2023-09-01

Applicant: MOLECULAR PLASMA GROUP SA

Inventor： Gill SCHELTJENS ,  Regis HEYBERGER ,  Malek ALNASSER

IPC: C23C16/513 ,  B05B15/18 ,  B05B7/04 ,  B05B7/22 ,  B05B13/02 ,  C23C16/455 ,  H05H1/28

CPC classification number: C23C16/513 ,  B05B15/18 ,  B05B7/04 ,  B05B7/22 ,  B05B13/0214 ,  B05B13/0228 ,  C23C16/45563 ,  H05H1/28 ,  H05H1/47

Abstract: A method for plasma coating an object includes an object profile, having the steps of: a) manufacturing a replaceable shield comprising a jet inlet, a nozzle outlet and a sidewall extending from the jet inlet to the nozzle outlet, wherein the nozzle outlet includes an edge essentially congruent to at least part of the object profile; b) detachably attaching the replaceable shield to a jet outlet of a plasma jet generator, c) placing the object at the nozzle outlet such that the object profile fits closely to the nozzle outlet edge; d) plasma coating the object with a low-temperature, oxygen-free plasma at an operating pressure which is higher than the atmospheric pressure by providing a plasma jet in the shield via the plasma jet generator and injecting coating precursors in the plasma jet in the shield.

公开(公告)号：US11802341B2

公开(公告)日：2023-10-31

申请号：US17144699

申请日：2021-01-08

Applicant: SPTS Technologies Limited

Inventor： Stephen Burgess ,  Kathrine Crook ,  Daniel Archard ,  William Royle ,  Euan Alasdair Morrison

IPC: C23C16/40 ,  C23C16/513 ,  C23C16/455

CPC classification number: C23C16/513 ,  C23C16/455

Abstract: A capacitively coupled Plasma Enhanced Chemical Vapour Deposition (PE-CVD) apparatus has a chamber, a first electrode with a substrate support positioned in the chamber, a second electrode with a gas inlet structure positioned in the chamber, and an RF power source connected to the gas inlet structure for supplying RF power thereto. The gas inlet structure has an edge region, a central region which depends downwardly with respect to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture to the chamber. The edge region and the central region both constitute part of the second electrode. The precursor gas inlets are disposed in the edge region and the central region is spaced apart from the substrate support to define a plasma dark space channel.

公开(公告)号：US11767594B2

公开(公告)日：2023-09-26

申请号：US17251847

申请日：2019-06-24

Applicant: MOLECULAR PLASMA GROUP SA

Inventor： Gill Scheltjens ,  Régis Heyberger ,  Malek Alnasser

IPC: C23C16/513 ,  B05B7/22 ,  B05B15/18 ,  B05B7/04 ,  B05B13/02 ,  C23C16/455 ,  H05H1/28 ,  H05H1/24

CPC classification number: C23C16/513 ,  B05B7/04 ,  B05B7/22 ,  B05B13/0214 ,  B05B13/0228 ,  B05B15/18 ,  C23C16/45563 ,  H05H1/28 ,  H05H1/2406 ,  H05H1/47

Abstract: A method for plasma coating an object includes an object profile, having the steps of: a) manufacturing a replaceable shield comprising a jet inlet, a nozzle outlet and a sidewall extending from the jet inlet to the nozzle outlet, wherein the nozzle outlet includes an edge essentially congruent to at least part of the object profile; b) detachably attaching the replaceable shield to a jet outlet of a plasma jet generator; c) placing the object at the nozzle outlet such that the object profile fits closely to the nozzle outlet edge; d) plasma coating the object with a low-temperature, oxygen-free plasma at an operating pressure which is higher than the atmospheric pressure by providing a plasma jet in the shield via the plasma jet generator and injecting coating precursors in the plasma jet in the shield.

公开(公告)号：US20230227968A1

公开(公告)日：2023-07-20

申请号：US18190246

申请日：2023-03-27

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/513 ,  C23C16/455 ,  C23C16/52 ,  C23C16/507 ,  C23C16/14

CPC classification number: C23C16/42 ,  C23C16/513 ,  C23C16/45536 ,  C23C16/52 ,  C23C16/507 ,  C23C16/45542 ,  C23C16/14

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.