公开(公告)号：US11621411B2

公开(公告)日：2023-04-04

申请号：US17125787

申请日：2020-12-17

申请人： Intecells, Inc.

发明人： Xiaohong Gayden ,  Joseph M. Ziegelbauer ,  Lu Liu

IPC分类号： H01M4/04 ,  C23C16/40 ,  H01M10/0525 ,  H01M50/403 ,  H01M50/434 ,  H01M50/449 ,  H01M4/62 ,  H01M4/139 ,  C23C16/04 ,  C23C16/513 ,  H01M4/66

摘要： Disclosed is a method for making a lithium-ion cell by depositing from an atmospheric plasma deposition device inorganic oxide particles produced from a precursor in an atmospheric plasma as a coating on a surface of a lithium-ion electrochemical cell component. The coating formed by the inorganic oxide particles may be an insulating coating or may provide dimensional stability during a thermal runaway.

公开(公告)号：US11560627B2

公开(公告)日：2023-01-24

申请号：US15987273

申请日：2018-05-23

申请人： STARFIRE INDUSTRIES LLC

发明人： Brian Edward Jurczyk ,  Robert Andrew Stubbers

IPC分类号： C23C16/511 ,  C23C16/455 ,  C23C16/513 ,  C23C16/02 ,  H01J37/32 ,  C23C16/515 ,  C23C14/02 ,  C23C14/34 ,  H01J37/34

摘要： A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region.

公开(公告)号：US20210207263A1

公开(公告)日：2021-07-08

申请号：US16071312

申请日：2017-01-17

申请人： Hella GmbH & Co. KGaA

发明人： Ralf Rochotzki ,  Frank Hartmann ,  Egbert Rath ,  Martin Eickenbusch

IPC分类号： C23C14/56 ,  C23C16/44 ,  C23C16/458 ,  C23C16/513 ,  C23C16/54

摘要： A procedure for coating the surfaces of a component under vacuum using a vacuum coating system is disclosed. The procedure includes at least two of the following process steps: a) Plasma activation of the component surface to be coated in an evacuated plasma activation chamber and/or b) applying the coat in an evacuated coating chamber and/or c) plasma polymerization for creating a protective coating on the previously applied coating in an evacuated plasma polymerization chamber. The plasma activation chamber and/or the coating chamber and/or the plasma polymerization chamber are ventilated and opened between at least two of the aforementioned process steps, and the component is fed to the subsequent process step.

公开(公告)号：US20210206643A1

公开(公告)日：2021-07-08

申请号：US17138194

申请日：2020-12-30

申请人： Samsung Electronics Co., Ltd.

发明人： Changseok LEE ,  Changhyun KIM ,  Kyung-Eun BYUN ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Eunkyu LEE

IPC分类号： C01B32/186 ,  C01B32/194 ,  C23C16/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/513

摘要： Provided is a method of selectively growing graphene. The method includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.

公开(公告)号：US10980101B2

公开(公告)日：2021-04-13

申请号：US15578295

申请日：2015-06-02

申请人： FUJI CORPORATION

发明人： Akihiro Niwa ,  Takahiro Jindo

IPC分类号： H05H1/26 ,  H05H1/46 ,  C23C16/513 ,  G03F7/42 ,  H01J37/32 ,  H01L21/67 ,  H05H1/34

摘要： An atmospheric pressure plasma generating device includes a nozzle block in which fourth gas passages from which plasma gas is emitted are formed, is covered by cover, and a through-hole is formed in the cover such that the leading end of the fourth gas passage is positioned on the inside. Heated gas is supplied inside the cover and is emitted from the through-hole of the cover, and plasma gas is emitted so as to penetrate the heated gas. By the plasma gas being surrounded by the heated gas in this manner, deactivation of the plasma gas is prevented. A distance between the leading end of the fourth gas passage and an opening of the through-hole at an outer wall of the cover is set from 0 to 2 mm in an emission direction of the plasma gas.

公开(公告)号：US10954598B2

公开(公告)日：2021-03-23

申请号：US15901145

申请日：2018-02-21

申请人： Ascentool, Inc.

发明人： George Xinsheng Guo

IPC分类号： C23C14/35 ,  C23C16/458 ,  C23C16/513 ,  C23C16/46 ,  C23C16/04 ,  C23C16/50 ,  C23C16/455 ,  H01J37/34 ,  H01J37/32 ,  C23C14/04

摘要： A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

公开(公告)号：US10828869B2

公开(公告)日：2020-11-10

申请号：US15691072

申请日：2017-08-30

申请人： Ultra Conductive Copper Company, Inc.

发明人： Horst Jakob Adams

IPC分类号： B32B15/20 ,  H01B1/02 ,  H01B5/02 ,  H01B1/04 ,  C23C16/26 ,  B32B15/01 ,  B82Y30/00 ,  C01B32/186 ,  C01B32/194 ,  C23C16/54 ,  H01B13/00 ,  H01B5/00 ,  F28F21/02 ,  F28F13/00 ,  C23C16/513

摘要： A multilayer structure comprises a plurality of composite structures in a stacked configuration, each having a copper layer having a thickness of no larger than 25 μm, and first and second graphene layers sandwiching the copper layer. The first graphene layer of a first composite structure among the plurality of composite structures directly contacts a second graphene layer of a second composite structure among the plurality of composite structures to form a graphene bi-layer structure. Either the first or second graphene layer of the graphene bi-layer structure comprises silver atoms, but not both. The silver atoms are ring-centered on graphene rings and delocalized inside the graphene rings.

公开(公告)号：US10818611B2

公开(公告)日：2020-10-27

申请号：US15438322

申请日：2017-02-21

申请人： II-VI OptoElectronic Devices, Inc.

发明人： Kevin Chi-Wen Chang ,  David Hensley ,  William Wilkinson

IPC分类号： H01L23/00 ,  H01L21/02 ,  H01L21/66 ,  H01L23/31 ,  H01L23/29 ,  C30B33/00 ,  C23C16/34 ,  C23C16/40 ,  C23C16/06 ,  C23C16/513 ,  H01S5/02 ,  H01S5/183

摘要： Methods for compensating for bow in a semiconductor structure comprising an epitaxial layer grown on a semiconductor substrate. The methods include forming an adhesion layer on the backside of the wafer, and forming a stress compensation layer on the adhesion layer.

公开(公告)号：US20200270747A1

公开(公告)日：2020-08-27

申请号：US16791264

申请日：2020-02-14

申请人： Applied Materials, Inc.

发明人： Mats LARSSON ,  Kevin A. PAPKE ,  Chirag Shaileshbhai KHAIRNAR ,  Rajasekhar PATIBANDLA ,  Karthikeyan BALARAMAN ,  Balamurugan RAMASAMY ,  Kartik SHAH ,  Umesh M. KELKAR

IPC分类号： C23C16/02 ,  C23C16/513 ,  C23C16/56 ,  C23C16/40

摘要： One embodiment of the disclosure provides a method of fabricating a chamber component with a coating layer disposed on an interface layer with desired film properties. In one embodiment, a method of fabricating a coating material includes providing a base structure comprising an aluminum or silicon containing material, forming an interface layer on the base structure, wherein the interface layer comprises one or more elements from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and forming a coating layer on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz. In another embodiment, a chamber component includes an interface layer disposed on a base structure, wherein the interface layer is selected from at least one of Ta, Al, Si, Mg, Y, or combinations thereof, and a coating layer disposed on the interface layer, wherein the coating layer has a molecular structure of SivYwMgxAlyOz.

公开(公告)号：US10654147B2

公开(公告)日：2020-05-19

申请号：US15886574

申请日：2018-02-01

申请人： Applied Materials, Inc.

发明人： Wendell Glenn Boyd, Jr. ,  Jim Zhongyi He

IPC分类号： B24B37/14 ,  B24B37/04 ,  B24B37/10 ,  H01L21/683 ,  H01L21/687 ,  C23C16/513 ,  H01J37/32

摘要： Methods of polishing a patterned surface of an electrostatic chucking (ESC) substrate support to be used in plasma assisted or plasma enhanced semiconductor manufacturing chambers are provided herein. In particular, embodiments described herein, provide polishing methods that round and debur the edges of elevated features and remove dielectric material from the non-substrate contacting surfaces of a patterned substrate support to reduce defectivity associated therewith.