公开(公告)号：US06627267B2

公开(公告)日：2003-09-30

申请号：US09853906

申请日：2001-05-11

申请人： John D. Affinito

发明人： John D. Affinito

IPC分类号： C23C16452

CPC分类号： B05D1/62 ,  C23C16/4486 ,  C23C16/50

摘要： A method for plasma enhanced chemical vapor deposition of low vapor pressure monomeric materials. The method includes making an evaporate by receiving a plurality of monomeric particles of the low vapor pressure monomeric materials as a spray into a flash evaporation housing, evaporating the spray on an evaporation surface, and discharging the evaporate through an evaporation outlet; making a monomer plasma from the evaporate by passing the evaporate proximate a glow discharge electrode; and cryocondensing the monomer plasma onto the substrate as a cryocondensed monomer. The invention also involves a method for making self-curing polymer layers in a vacuum chamber.

摘要翻译： 一种用于低蒸气压单体材料的等离子体增强化学气相沉积的方法。 该方法包括通过将多个低蒸气压单体材料的单体颗粒作为喷雾接收到闪蒸壳体中，蒸发蒸发表面上的喷雾并通过蒸发出口排出蒸发物来蒸发; 通过使蒸发器靠近辉光放电电极从蒸发器制备单体等离子体; 并将单体等离子体冷冻冷冻至作为低温冷凝的单体的衬底上。 本发明还涉及在真空室中制备自固化聚合物层的方法。

公开(公告)号：US06177142B1

公开(公告)日：2001-01-23

申请号：US09325014

申请日：1999-06-02

申请人： John T. Felts

发明人： John T. Felts

IPC分类号： C23C16452

CPC分类号： B05D1/62 ,  C23C16/401 ,  C23C16/448 ,  C23C16/507 ,  H01M4/0421 ,  H01M4/13

摘要： An apparatus for forming a film on a substrate includes a gas inlet and an insert attached to the gas inlet, the insert including a deposition source material such as lithium. To form the film on the substrate, the substrate is mounted in a vacuum chamber. After the vacuum chamber is pumped down to a subatmospheric pressure, a first process gas such as argon is provided through the gas inlet and insert and into a plasma region proximate the substrate. Power is then coupled to generate a plasma inside of the insert which heats the insert and causes the deposition source material to vaporize. The deposition source material vapor is mixed with a plasma polymerizable material in the plasma region proximate the substrate causing a plasma enhanced chemical vapor deposition (PECVD) thin film such as silicon oxide including the deposition source material (e.g. lithium) to be deposited on the substrate.

摘要翻译： 用于在基板上形成膜的装置包括气体入口和附接到气体入口的插入件，该插入件包括诸如锂的沉积源材料。 为了在基板上形成膜，将基板安装在真空室中。 在将真空室泵送到低于大气压之后，通过气体入口提供诸如氩的第一处理气体并将其插入并接近基板的等离子体区域。 然后将功率耦合以在插入件内部产生等离子体，该等离子体加热插入件并使沉积源材料蒸发。 沉积源材料蒸气与靠近衬底的等离子体区域中的等离子体可聚合材料混合，引起等离子体增强的化学气相沉积（PECVD）薄膜，例如包含沉积源材料（例如锂）的氧化硅沉积在衬底上 。

公开(公告)号：US06720260B1

公开(公告)日：2004-04-13

申请号：US10600622

申请日：2003-06-20

申请人： James A. Fair ,  Nerissa Taylor

发明人： James A. Fair ,  Nerissa Taylor

IPC分类号： C23C16452

CPC分类号： C23C16/45525 ,  C23C16/45536 ,  C23C16/482 ,  C23C16/486 ,  C23C16/487

摘要： Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.

摘要翻译： 公开了离子诱导的，UV诱导的和电子诱导的顺序化学气相沉积（CVD）工艺，其中分别使用离子通量，紫外线辐射或电子通量来诱导化学反应 的过程。 将薄膜沉积在衬底上的过程包括将气相中的第一反应气体的流引入到处理室中，其中气体在衬底上形成吸附的饱和层，并将衬底暴露于离子通量， 紫外线辐射或用于引起第一反应气体的吸附层的化学反应形成薄膜的电子束。 可以使用第二反应气体来形成复合薄膜。 可以重复本发明的离子诱导的，UV诱导的和电子诱导的顺序CVD方法以形成所需厚度的薄膜。

公开(公告)号：US06627268B1

公开(公告)日：2003-09-30

申请号：US09849075

申请日：2001-05-03

申请人： James A. Fair ,  Wilbert van den Hoek ,  Nerissa Taylor

发明人： James A. Fair ,  Wilbert van den Hoek ,  Nerissa Taylor

IPC分类号： C23C16452

CPC分类号： C23C16/45525 ,  C23C16/45536 ,  C23C16/482 ,  C23C16/486 ,  C23C16/487

摘要： Ion-induced, UV-induced, and electron-induced sequential chemical vapor deposition (CVD) processes are disclosed where an ion flux, a flux of ultra-violet radiation, or an electron flux, respectively, is used to induce the chemical reaction in the process. The process for depositing a thin film on a substrate includes introducing a flow of a first reactant gas in vapor phase into a process chamber where the gas forms an adsorbed saturated layer on the substrate and exposing the substrate to a flux of ions, a flux of ultra-violet radiation, or a flux of electrons for inducing a chemical reaction of the adsorbed layer of the first reactant gas to form the thin film. A second reactant gas can be used to form a compound thin film. The ion-induced, UV-induced, and electron-induced sequential CVD process of the present invention can be repeated to form a thin film of the desired thickness.

摘要翻译： 公开了离子诱导的，UV诱导的和电子诱导的顺序化学气相沉积（CVD）工艺，其中分别使用离子通量，紫外线辐射或电子通量来诱导化学反应 的过程。 将薄膜沉积在衬底上的过程包括将气相中的第一反应气体的流引入到处理室中，其中气体在衬底上形成吸附的饱和层，并将衬底暴露于离子通量， 紫外线辐射或用于引起第一反应气体的吸附层的化学反应形成薄膜的电子束。 可以使用第二反应气体来形成复合薄膜。 可以重复本发明的离子诱导的，UV诱导的和电子诱导的顺序CVD方法以形成所需厚度的薄膜。

公开(公告)号：US06616985B2

公开(公告)日：2003-09-09

申请号：US09897546

申请日：2001-07-02

申请人： Ronald Allan Powell ,  Gabriel I. Font-Rodriguez ,  Simon Selitser ,  Emerson Derryck Settles

发明人： Ronald Allan Powell ,  Gabriel I. Font-Rodriguez ,  Simon Selitser ,  Emerson Derryck Settles

IPC分类号： C23C16452

CPC分类号： H01J37/32449 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45591 ,  H01J37/32357

摘要： An apparatus and method for injecting gas within a plasma reactor and tailoring the distribution of an active species generated by the remote plasma source over the substrate or wafer. The distribution may be uniform, wafer-edge concentrated, or wafer-center concentrated. A contoured plate or profiler modifies the distribution. The profiler is an axially symmetric plate, having a narrow top end and a wider bottom end, shaped to redistribute the gas flow incident upon it. The method for tailoring the distribution of the active species over the substrate includes predetermining the profiler diameter and adjusting the profiler height over the substrate. A coaxial injector tube, for the concurrent injection of activated and non-activated gas species, allows gases to be delivered in an axially symmetric manner whereby one gas can be excited in a high density RF plasma, while the other gas can be prevented from excitation and/or dissociation caused by exposure to the plasma or heated surfaces in the source apparatus. The profiler is used in conjunction with the coaxial injector tube for redistributing the excited gases emerging from the injector tube, while allowing the non-excited gases to pass through its center.

摘要翻译： 一种用于在等离子体反应器内注入气体并调整由远程等离子体源产生的活性物质在衬底或晶片上的分布的装置和方法。 分布可以是均匀的，晶片边缘集中或晶片中心集中。 轮廓板或轮廓仪修改分布。 轮廓仪是轴向对称的板，具有窄的顶端和较宽的底端，成形为重新分布入射到其上的气流。 用于调整活性物质在衬底上的分布的方法包括预先确定轮廓仪直径并调节衬底上的轮廓仪高度。 用于同时注入活性和非活性气体种类的同轴注射管允许以轴对称的方式输送气体，从而可以在高密度RF等离子体中激发一种气体，而可以防止其它气体激发 和/或通过暴露于源装置中的等离子体或加热表面引起的解离。 轮廓仪与同轴喷射管一起使用，用于重新分配从喷射器管出来的激发气体，同时允许非激发气体通过其中心。

公开(公告)号：US06413358B2

公开(公告)日：2002-07-02

申请号：US09922587

申请日：2001-08-03

申请人： Kevin G. Donohoe

发明人： Kevin G. Donohoe

IPC分类号： C23C16452

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/32642 ,  Y10S156/915

摘要： This invention is a hardware modification which permits greater uniformity of etching to be achieved in a high-density-source plasma reactor (i.e., one which uses a remote source to generate a plasma, and which also uses high-frequency bias power on the wafer chuck). The invention addresses the uniformity problem which arises as the result of nonuniform power coupling between the wafer and the walls of the etch chamber. The solution to greatly mitigate the nonuniformity problem is to increase the impedance between the wafer and the chamber walls. This may be accomplished by placing a cylindrical dielectric wall around the wafer. Quartz is a dielectric material that is ideal for the cylindrical wall if silicon is to be etched selectively with respect to silicon dioxide, as quartz it is virtually inert under such conditions.

公开(公告)号：US06287643B1

公开(公告)日：2001-09-11

申请号：US09408756

申请日：1999-09-30

申请人： Ronald Allan Powell ,  Gabriel I. Font-Rodriguez ,  Simon Selitser ,  Emerson Derryck Settles

发明人： Ronald Allan Powell ,  Gabriel I. Font-Rodriguez ,  Simon Selitser ,  Emerson Derryck Settles

IPC分类号： C23C16452

CPC分类号： H01J37/32449 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45591 ,  H01J37/32357

摘要： An apparatus and method for injecting gas within a plasma reactor and tailoring the distribution of an active species generated by the remote plasma source over the substrate or wafer. The distribution may be uniform, wafer-edge concentrated, or wafer-center concentrated. A contoured plate or profiler modifies the distribution. The profiler is an axially symmetric plate, having a narrow top end and a wider bottom end, shaped to redistribute the gas flow incident upon it. The method for tailoring the distribution of the active species over the substrate includes predetermining the profiler diameter and adjusting the profiler height over the substrate. A coaxial injector tube, for the concurrent injection of activated and non-activated gas species, allows gases to be delivered in an axially symmetric manner whereby one gas can be excited in a high density RF plasma, while the other gas can be prevented from excitation and/or dissociation caused by exposure to the plasma or heated surfaces in the source apparatus. The profiler is used in conjunction with the coaxial injector tube for redistributing the excited gases emerging from the injector tube, while allowing the non-excited gases to pass through its center.

摘要翻译： 一种用于在等离子体反应器内注入气体并调整由远程等离子体源产生的活性物质在衬底或晶片上的分布的装置和方法。 分布可以是均匀的，晶片边缘集中或晶片中心集中。 轮廓板或轮廓仪修改分布。 轮廓仪是轴向对称的板，具有窄的顶端和较宽的底端，成形为重新分布入射到其上的气流。 用于调整活性物质在衬底上的分布的方法包括预先确定轮廓仪直径并调节衬底上的轮廓仪高度。 用于同时注入活性和非活性气体种类的同轴注射管允许以轴对称的方式输送气体，从而可以在高密度RF等离子体中激发一种气体，而可以防止其它气体激发 和/或通过暴露于源装置中的等离子体或加热表面引起的解离。 轮廓仪与同轴喷射管一起使用，用于重新分配从喷射器管出来的激发气体，同时允许非激发气体通过其中心。

公开(公告)号：US06500300B2

公开(公告)日：2002-12-31

申请号：US10132589

申请日：2002-04-25

申请人： Kevin G. Donohoe

发明人： Kevin G. Donohoe

IPC分类号： C23C16452

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/32642 ,  Y10S156/915

摘要： This invention is a hardware modification which permits greater uniformity of etching to be achieved in a high-density-source plasma reactor (i.e., one which uses a remote source to generate a plasma, and which also uses high-frequency bias power on the wafer chuck). The invention addresses the uniformity problem which arises as the result of nonuniform power coupling between the wafer and the walls of the etch chamber. The solution to greatly mitigate the nonuniformity problem is to increase the impedance between wafer and the chamber walls. This may be accomplished by placing a cylindrical dielectric wall around the wafer. Quartz is a dielectric material that is ideal for the cylindrical wall if silicon is to be etched selectively with respect to silicon dioxide, as quartz it is virtually inert under such conditions.

摘要翻译： 本发明是一种硬件修改，其允许在高密度源等离子体反应器（即，使用远程源产生等离子体并且还在晶片上使用高频偏置功率的等离子体反应器）中实现更高的蚀刻均匀性 卡盘）。 本发明解决了由于晶片和蚀刻室的壁之间的不均匀功率耦合而产生的均匀性问题。 大大减轻不均匀性问题的解决方案是增加晶片与室壁之间的阻抗。 这可以通过在晶片周围放置圆柱形介电壁来实现。 石英是一种电介质材料，对于圆柱形壁而言，如果要在二氧化硅上选择性地蚀刻硅，石英是在这种条件下实际上是惰性的。

公开(公告)号：US06365235B2

公开(公告)日：2002-04-02

申请号：US09068695

申请日：1998-05-13

申请人： Pavel Koulik ,  Evgenia Zorina

发明人： Pavel Koulik ,  Evgenia Zorina

IPC分类号： C23C16452

CPC分类号： H01L21/3065 ,  C23C8/10 ,  C23C8/36 ,  C23C16/452

摘要： A surface treatment method wherein one or more active particle streams are generated and aimed at a surface to be treated so that the particle stream interacts therewith. The active particle stream consists of activated particles forming chemically active sites on the surface, and modifying particles occupying said sites. The energy of the activated particles is greater than the energy at break of the inhibited surface bonds of the surface, and lower than the radiative flaw formation energy on the surface. The strength of the particle stream at the treated surface is greater than a quantity N/t where N is the surface density of the inhibited bonds to be broken and t is the duration of exposure of any point on the treated surface to the stream. A device for carrying out the method is also provided.

摘要翻译： 一种表面处理方法，其中产生一种或多种活性粒子流并瞄准待处理的表面，使得粒子流与其相互作用。 活性颗粒物流由在表面上形成化学活性位点的活化颗粒和占据所述位点的改性颗粒组成。 活化颗粒的能量大于表面抑制表面键断裂的能量，并且低于表面上的辐射缺陷形成能。 处理表面处的颗粒物流的强度大于N / t的量，其中N是被破坏的粘合物的表面密度，t是处理过的表面上的任何点暴露于流的持续时间。 还提供了一种用于执行该方法的装置。

公开(公告)号：US06180185B2

公开(公告)日：2001-01-30

申请号：US09452271

申请日：1999-11-30

申请人： John T. Felts

发明人： John T. Felts

IPC分类号： C23C16452

CPC分类号： B05D1/62 ,  C23C16/401 ,  C23C16/448 ,  C23C16/507 ,  H01M4/0421 ,  H01M4/13

摘要： An apparatus for forming a film on a substrate includes a gas inlet and an insert attached to the gas inlet, the insert including a deposition source material such as lithium. To form the film on the substrate, the substrate is mounted in a vacuum chamber. After the vacuum chamber is pumped down to a subatmospheric pressure, a first process gas such as argon is provided through the gas inlet and insert and into a plasma region proximate the substrate. Power is then coupled to generate a plasma inside of the insert which heats the insert and causes the deposition source material to vaporize. The deposition source material vapor is mixed with a plasma polymerizable material in the plasma region proximate the substrate causing a plasma enhanced chemical vapor deposition (PECVD) thin film such as silicon oxide including the deposition source material (e.g. lithium) to be deposited on the substrate.