公开(公告)号：US06183562B2

公开(公告)日：2001-02-06

申请号：US08996961

申请日：1997-12-23

申请人： Tracy Lavalle Pierce ,  Douglas A. Czaja

发明人： Tracy Lavalle Pierce ,  Douglas A. Czaja

IPC分类号： C23C1652

CPC分类号： C23C16/46 ,  C23C16/52

摘要： A thermal protection system for a chemical vapor deposition machine (CVD). The system of the present invention includes a thermal sensor for providing a temperature signal corresponding to a CVD chamber temperature, a heating component for heating the CVD chamber, and a controller for regulating the CVD chamber temperature. The controller is coupled to receive the temperature signal and to control the heating component in response thereto. An interlock circuit is coupled between the heating component and the controller. The interlock circuit has an open state and a closed state. A comparison circuit is coupled to receive the temperature signal and coupled to control the interlock circuit, wherein the comparison circuit effects a comparison between the temperature signal and a reference and commands the interlock to the open state when the temperature signal exceeds the reference. In so doing, the comparison circuit protects the CVD chamber from an over-temperature condition that might not otherwise be prevented by the controller.

摘要翻译： 用于化学气相沉积机（CVD）的热保护系统。 本发明的系统包括用于提供与CVD室温相对应的温度信号的热传感器，用于加热CVD室的加热部件和用于调节CVD室温度的控制器。 控制器被耦合以接收温度信号并且响应于此控制加热部件。 联锁电路耦合在加热部件和控制器之间。 互锁电路具有打开状态和关闭状态。 比较电路被耦合以接收温度信号并被耦合以控制互锁电路，其中比较电路实现温度信号和参考之间的比较，并且当温度信号超过参考时将互锁命令为打开状态。 在这样做时，比较电路保护CVD室不受控制器否则可能防止的过温条件。

公开(公告)号：US06596339B1

公开(公告)日：2003-07-22

申请号：US09933955

申请日：2001-08-21

申请人： Mikhail Yaroslavsky

发明人： Mikhail Yaroslavsky

IPC分类号： C23C1652

CPC分类号： C23C16/52

摘要： A method and apparatus for the non-contact in-situ temperature measurement of a material layer during chemical vapor deposition of the material on an underlying substrate are provided. Magnitude modulated UV light having a plurality of separated spectral components is directed at the material being deposited on the substrate. The modulated UV light has a plurality of wavelengths corresponding to different temperature dependencies of absorptance in the deposited material. The separated spectral components are within transparency spectral windows of a plasma media contained in the CVD reactor. A portion of the magnitude modulated UV light is directed as a reference into a comparison device, such as a spectrophotometer. Light reflected from the deposited material is also directed at the comparison device for comparison with the reference light. That is, the magnitudes of the magnitude modulated components of the reflected light and the reference light are compared at more than one spectral component. The temperature of the deposited material is derived from this comparison. The results of the comparison are then utilized to control the temperature of the substrate on which the material is being deposited.

摘要翻译： 提供了一种用于在材料的化学气相沉积下的基底上进行材料层的非接触原位温度测量的方法和装置。 具有多个分离的光谱分量的幅度调制的UV光被引导到沉积在基底上的材料。 经调制的UV光具有对应于沉积材料中吸收率的不同温度依赖性的多个波长。 分离的光谱分量在包含在CVD反应器中的等离子体介质的透明光谱窗口内。 幅度调制的UV光的一部分作为参考被引导到诸如分光光度计的比较装置中。 从沉积材料反射的光也指向比较装置，以与参考光进行比较。 也就是说，将反射光和参考光的幅度调制分量的大小在多于一个的光谱分量进行比较。 沉积材料的温度来源于该比较。 然后比较结果用于控制材料沉积在其上的基板的温度。

公开(公告)号：US06352591B1

公开(公告)日：2002-03-05

申请号：US09613934

申请日：2000-07-11

申请人： Ellie Yieh ,  Li-Qun Xia ,  Srinivas Nemani

发明人： Ellie Yieh ,  Li-Qun Xia ,  Srinivas Nemani

IPC分类号： C23C1652

CPC分类号： C23C16/45565 ,  C23C16/0245 ,  C23C16/402 ,  C23C16/4405 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/52 ,  C23C16/54 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02301 ,  H01L21/02362 ,  H01L21/2255 ,  H01L21/31612 ,  H01L21/31625

摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

摘要翻译： 本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。 本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。 在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。 特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

公开(公告)号：US06574993B2

公开(公告)日：2003-06-10

申请号：US09747363

申请日：2000-12-20

申请人： Marinus Jacob de Fouw ,  Antonius Henricus Elisabeth Breuls

发明人： Marinus Jacob de Fouw ,  Antonius Henricus Elisabeth Breuls

IPC分类号： C23C1652

CPC分类号： C03B37/0183 ,  C03B37/01807

摘要： The present invention relates to a method of applying glass layers, which may or may not be doped, to the interior of a substrate tube by means of a chemical vapor deposition (CVD) technique, using a reactive gas mixture, in order to obtain a preform that exhibits a precisely defined refractive index profile, which method comprises a number of steps.

摘要翻译： 本发明涉及通过使用反应性气体混合物的化学气相沉积（CVD）技术将玻璃层施加或不掺杂到衬底管内部的方法，以便获得 展示精确定义的折射率分布的预制件，该方法包括多个步骤。

公开(公告)号：US06490994B1

公开(公告)日：2002-12-10

申请号：US09598574

申请日：2000-06-21

申请人： Takashi Yoshizawa

发明人： Takashi Yoshizawa

IPC分类号： C23C1652

CPC分类号： H01J37/32623 ,  C23C16/452 ,  H01J37/32366 ,  H01J37/32568 ,  H01J2237/022

摘要： A plasma processing apparatus that allows processing of high quality under a wider processing condition is provided by optimizing the distance between a plasma region and a substrate even in the case where the processing condition such as process pressure or high frequency output differs. A plasma chamber is divided into a lower plasma chamber and an upper plasma chamber. A process chamber and the lower plasma chamber are connected flexibly by a lower chamber bellows. The lower plasma chamber and the upper plasma chamber are connected flexibly by an upper chamber bellows. Since the radioactive species volume is increased when the process pressure is low, the lower and upper plasma chambers are respectively raised. In contrast, since the radioactive species volume is reduced when the process pressure is high, the upper and lower plasma chambers are respectively lowered.

摘要翻译： 即使在诸如过程压力或高频输出的处理条件不同的情况下，通过优化等离子体区域和衬底之间的距离来提供允许在更宽处理条件下处理高质量的等离子体处理装置。 等离子体室分为下等离子体室和上等离子体室。 处理室和下等离子体室由下室波纹管灵活连接。 下部等离子体室和上部等离子体室通过上部室波纹管灵活连接。 由于当过程压力低时放射性物质体积增加，所以下和上等离子体室分别升高。 相反，由于当处理压力高时放射性物质体积减小，所以上下等离子体室分别下降。

公开(公告)号：US06322631B1

公开(公告)日：2001-11-27

申请号：US09489607

申请日：2000-01-21

申请人： Wataru Okase

发明人： Wataru Okase

IPC分类号： C23C1652

CPC分类号： H01L21/67751 ,  H01L21/67109 ,  H01L21/68707

摘要： When the processed body holding member is moved upward or downward, the pressure in the reaction pipe and the shift and mount chamber is reduced down to several to several tens Torr, to reduce wind pressure applied to the processed body and thereby to suppress pressure fluctuations in the reaction pipe. Further, when the processed body holding member is moved upward or downward, the processing gas is passed in the same direction as the movement direction of the processed body holding member at a speed higher than the movement speed of the processed body holding member, to prevent the processing gas from being opposed to the processed body, so that the resistance received by the processed body is reduced and thereby the pressure fluctuations can be suppressed in the reaction pipe.

摘要翻译： 当处理体保持构件向上或向下移动时，反应管和移动和安装室中的压力减小到几十Torr，以减小施加到加工体的风压，从而抑制压力波动 反应管。 此外，当处理体保持构件向上或向下移动时，处理气体以与处理体保持构件的移动速度相同的速度沿与处理体保持构件的移动方向相同的方向通过，以防止 处理气体与被处理体相对，使得被处理体接收的电阻降低，从而可以抑制反应管中的压力波动。

公开(公告)号：US06521292B1

公开(公告)日：2003-02-18

申请号：US09632645

申请日：2000-08-04

申请人： Joseph Yudovsky ,  Salvador Umotoy ,  Thomas Madar

发明人： Joseph Yudovsky ,  Salvador Umotoy ,  Thomas Madar

IPC分类号： C23C1652

CPC分类号： C23C16/45521 ,  C23C16/455 ,  C23C16/4585 ,  H01L21/68721 ,  H01L21/68735

摘要： The present invention provides exemplary apparatus and methods for processing substrates and for ensuring purge gases reach the substrate edge, including edges of JMF type wafers, to help prevent unwanted deposition thereon. One embodiment provides an apparatus for processing substrates which includes a chamber and a substrate support (13) disposed in the chamber. An edge ring (15) is disposed on the substrate support. The edge ring has a lip portion (30) which at least partially overhangs an upper surface (36) of the substrate support to define a gap (29) between the lip portion and the upper surface. In this manner, the edge ring is designed to form a gap which properly directs purge gases to edges of the substrate, including JMF type substrates.

摘要翻译： 本发明提供了用于处理基板并用于确保吹扫气体到达基板边缘（包括JMF型晶片的边缘）的示例性装置和方法，以帮助防止其上不希望的沉积。 一个实施例提供了一种用于处理衬底的设备，其包括设置在腔室中的室和衬底支撑件（13）。 边缘环（15）设置在基板支撑件上。 边缘环具有唇部（30），其至少部分地悬垂在基底支撑件的上表面（36）上，以在唇部和上表面之间限定间隙（29）。 以这种方式，边缘环被设计成形成适当地将吹扫气体引导到衬底边缘的间隙，包括JMF型衬底。

公开(公告)号：US06274191B1

公开(公告)日：2001-08-14

申请号：US08206973

申请日：1994-03-07

申请人： Michael R. Emken

发明人： Michael R. Emken

IPC分类号： C23C1652

CPC分类号： B01J8/1809 ,  B01J2208/0007 ,  B01J2208/00407 ,  B01J2208/00495 ,  B01J2208/00548 ,  B01J2208/0061 ,  B01J2208/00619 ,  C23C14/52 ,  C23C16/442

摘要： Deposition of a pyrocarbon coating of precise thickness onto one or more substrates being levitated along with a bed of particles in a fluidized bed coating enclosure is accomplished by varying the amount of hydrocarbon supplied to the bed as a part of an upward levitating flow to compensate for changes which are detected in the size of the fluidized bed. Increases and decreases in the size of the bed are detected by monitoring either the differential pressure above and below the bed or the weight of the bed, and compensating changes are made to return the bed to its desired size by changing the flow rate of hydrocarbon. For example, when a growth in bed size is detected that is not attributable to an aberration in either particle supply or withdrawal, the amount of hydrocarbon being supplied to the bed is decreased so as to cause the size of the bed to gradually return to its desired value.

摘要翻译： 通过改变作为向上浮动流的一部分供应到床的烃的量，将精确厚度的热解碳涂层沉积在与流化床涂层外壳中的颗粒床悬浮的一个或多个基底上沉积，以补偿 在流化床的尺寸上检测到的变化。 通过监测床上方和下方的压差或床的重量来检测床的尺寸的增加和减少，并且通过改变烃的流速来进行补偿改变以使床返回到其期望的尺寸。 例如，当检测到不是由于颗粒供应或抽出中的像差引起的床尺寸的增长时，供应到床的烃的量减少，以致使床的尺寸逐渐返回到其 所需值。

公开(公告)号：US06228170B1

公开(公告)日：2001-05-08

申请号：US08991293

申请日：1997-12-16

申请人： F. H. Chen ,  C. L. Wu ,  Y. B. Lin

发明人： F. H. Chen ,  C. L. Wu ,  Y. B. Lin

IPC分类号： C23C1652

CPC分类号： C23C16/45557 ,  C23C16/52

摘要： The present invention discloses an apparatus for regulating chamber pressure in a process chamber by a closed-loop control method utilizing a pressure sensor, a pressure controller and an inverter for regulating the rotational speed of an exhaust blower such that the exhaust pressure in a factory exhaust conduit can be substantially controlled at a constant value. The present invention novel method and apparatus allows a more stable chamber pressure to be maintained in an APCVD or LPCVD chamber, while substantially reduces the possibility of particulate contamination on a throttle valve that is mounted juxtaposed to the process chamber and thus minimizing any back-fill contamination problems.

摘要翻译： 本发明公开了一种利用压力传感器，压力控制器和逆变器的闭环控制方法来调节处理室中的室压力的装置，用于调节排风机的转速使得工厂排气中的排气压力 导管可以基本上控制在恒定值。 本发明新颖的方法和装置允许在APCVD或LPCVD室中保持更稳定的室压力，同时基本上降低了安装在与处理室并置的节流阀上的颗粒污染的可能性，从而最小化任何回填 污染问题。

公开(公告)号：US06667070B1

公开(公告)日：2003-12-23

申请号：US10061349

申请日：2002-02-04

申请人： Ercan Adem

发明人： Ercan Adem

IPC分类号： C23C1652

CPC分类号： C23C16/52

摘要： A novel method is provided for in situ monitoring of a film being deposited on a wafer for manufacturing a semiconductor device. The method involves producing an incident beam of radiation directed during a deposition process to a film being deposited on a wafer in a deposition reactor. The Raman scattered radiation resulted from interaction of the incident beam with molecules of the deposited film is detected to produce a Raman spectrum of the deposited film.

摘要翻译： 提供一种新颖的方法用于原位监测沉积在用于制造半导体器件的晶片上的膜。 该方法包括在沉积过程中将沉积在晶片上的膜的沉积反应器中产生的辐射入射光束产生。 检测入射光束与沉积膜分子相互作用产生的拉曼散射辐射，产生沉积膜的拉曼光谱。