公开(公告)号：US12122885B2

公开(公告)日：2024-10-22

申请号：US17911505

申请日：2021-03-26

申请人： SEKISUI CHEMICAL CO., LTD.

发明人： Kouki Ookura ,  Takeshi Wakiya

IPC分类号： C08J3/12 ,  C08F20/14 ,  C08F22/40 ,  C08K3/08 ,  C08K9/10 ,  C08L71/12 ,  C23C18/16 ,  C23C18/32 ,  G02F1/1339 ,  H01B1/22 ,  H01L23/00 ,  H01R4/04

CPC分类号： C08J3/128 ,  C08F20/14 ,  C08F22/40 ,  C08K3/08 ,  C08K9/10 ,  C08L71/123 ,  C23C18/1641 ,  C23C18/32 ,  G02F1/13398 ,  H01B1/22 ,  H01L24/29 ,  H01R4/04 ,  C08J2379/08 ,  C08K2003/0862 ,  C08K2201/005 ,  C08L2205/03 ,  G02F2202/022 ,  H01L2224/2929 ,  H01L2224/29311 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/2939 ,  H01L2924/061 ,  H01L2924/0615 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/0675 ,  H01L2924/069 ,  H01L2924/07025

摘要： The present invention aims to provide resin particles that have excellent heat resistance and that, when used as base particles of conductive particles, are applicable to mounting by thermocompression bonding at low pressure to produce a connection structure having excellent connection reliability. The present invention also aims to provide conductive particles, a conductive material, and a connection structure each including the resin particles. Provided are resin particles having a 5% weight loss temperature of 350° C. or higher, a 10% K value at 25° C. of 100 N/mm2 or more and 2,500 N/mm2 or less, and a 30% K value at 25° C. of 100 N/mm2 or more and 1,500 N/mm2 or less.

公开(公告)号：US20240304462A1

公开(公告)日：2024-09-12

申请号：US18569217

申请日：2022-06-15

申请人： Resonac Corporation

发明人： Masaya TOBA ,  Masaki YAMAGUCHI

IPC分类号： H01L21/48 ,  C23C18/16 ,  C23C18/38 ,  C23C28/02 ,  C25D3/38 ,  C25D5/02 ,  C25D7/12 ,  H01L23/12 ,  H05K1/03 ,  H05K3/18

CPC分类号： H01L21/4857 ,  C23C18/1641 ,  C23C18/1653 ,  C23C18/38 ,  C23C28/023 ,  C25D3/38 ,  C25D5/022 ,  C25D7/123 ,  H01L23/12 ,  H05K1/0366 ,  H05K3/188 ,  H05K2203/107

摘要： A method for manufacturing a wiring board includes steps of: (I) forming an insulation material layer on a surface of a support substrate; (II) forming a first conductive layer on a surface of the insulation material layer by electroless copper plating; (III) forming a first opening passing through the first conductive layer and the insulation material layer; (IV) forming a second conductive layer on a surface of the first conductive layer and on a bottom surface and a side surface of the first opening by electroless copper plating; (V) forming a resist pattern having a second opening communicating with the first opening on a surface of the second conductive layer; and (VI) filling the first opening and the second opening with a conductive material including copper by electrolytic copper plating.

公开(公告)号：US12089331B2

公开(公告)日：2024-09-10

申请号：US17314131

申请日：2021-05-07

申请人： Aplus Semiconductor Technologies Co., Ltd.

发明人： Cheng-Neng Chen ,  Sui-Ho Tsai ,  Yun-Nan Wang ,  Chiao-Hui Wang

IPC分类号： H05K1/14 ,  C23C14/34 ,  C23C14/58 ,  C23C18/16 ,  C23C28/02 ,  C25D5/02 ,  C25D5/10 ,  G03F7/004 ,  G03F7/20 ,  H05K1/11

CPC分类号： H05K1/147 ,  C23C14/34 ,  C23C14/5873 ,  C23C18/1637 ,  C23C28/023 ,  C25D5/022 ,  C25D5/10 ,  G03F7/0041 ,  G03F7/2016 ,  H05K1/11 ,  H05K2201/032 ,  H05K2201/0338 ,  H05K2201/0341

摘要： A metal circuit structure based on a flexible printed circuit (FPC) contains: a substrate, a first metal layer attached on the substrate, a second metal layer formed on the first metal layer, and an intermediate layer defined between the first metal layer and the second metal layer. A first surface of the intermediate layer is connected with the first metal layer, and a second surface of the intermediate layer is connected with the second metal layer. The intermediate layer is made of a first material, the second metal layer is made of a second material, and the first material of the intermediate layer does not act with the second material of the second metal layer.

公开(公告)号：US12076965B2

公开(公告)日：2024-09-03

申请号：US16346843

申请日：2017-11-02

申请人： MODUMETAL, INC.

发明人： Christina A. Lomasney

IPC分类号： B32B3/12 ,  B32B15/01 ,  C23C18/16 ,  C23C28/02 ,  C25D3/56 ,  C25D5/00 ,  C25D5/10 ,  C25D5/18

CPC分类号： B32B3/12 ,  C23C18/1644 ,  C23C28/021 ,  C25D3/562 ,  C25D5/10 ,  C25D5/18 ,  C25D5/605 ,  C25D5/611 ,  C25D5/617 ,  C25D5/619 ,  C25D5/627 ,  B32B15/01

摘要： The present disclosure provides articles comprising a laminate material having a void volume of at least 40%, having a lattice structure comprising a plurality of interconnected struts forming polyhedrons in a series that extends in three dimensions, or both, where the laminate materials have an interface density of at least 2.0 interfaces/micrometer (μm). Also described are methods for forming the same.

公开(公告)号：US20240247376A1

公开(公告)日：2024-07-25

申请号：US18416304

申请日：2024-01-18

申请人： Applied Materials, Inc.

发明人： Douglas LONG ,  Jallepally RAVI ,  Dien-yeh WU

IPC分类号： C23C16/455 ,  C23C4/08 ,  C23C4/134 ,  C23C16/42 ,  C23C16/50 ,  C23C18/16 ,  C23C18/31 ,  C25D3/44 ,  C25D5/48 ,  H01L21/285 ,  H01L21/687

CPC分类号： C23C16/45565 ,  C23C4/08 ,  C23C4/134 ,  C23C16/42 ,  C23C16/50 ,  C23C18/1689 ,  C23C18/31 ,  C25D3/44 ,  C25D5/48 ,  H01L21/28518 ,  H01L21/68757

摘要： A component of an apparatus for processing a substrate having a coating comprising fluorinated aluminum disposed on at least a portion of a surface of the component. A method of coating the component, a method of repairing a coating on a component, and a method of processing a substrate are also disclosed.

公开(公告)号：US12031213B2

公开(公告)日：2024-07-09

申请号：US17595570

申请日：2020-07-09

申请人： SHOWA DENKO K.K.

发明人： Akira Furuya ,  Tadaaki Kojima ,  Hiroshi Suzuki ,  Fumiaki Naka

IPC分类号： B32B15/01 ,  B32B3/10 ,  B32B3/26 ,  B32B3/30 ,  B32B15/04 ,  B32B15/18 ,  B32B15/20 ,  C23C8/12 ,  C23C8/14 ,  C23C18/16 ,  C23C18/18 ,  C23C18/32 ,  C23C18/34 ,  C23C18/36 ,  C23C18/42 ,  C23C18/44 ,  C23C18/52 ,  C23C18/54 ,  C23C28/00 ,  C23C28/02 ,  C23C30/00 ,  C25D3/12 ,  H01J37/32 ,  C22C38/44 ,  C23C16/44

CPC分类号： C23C28/322 ,  B32B3/10 ,  B32B3/266 ,  B32B3/30 ,  B32B15/01 ,  B32B15/015 ,  B32B15/017 ,  B32B15/018 ,  B32B15/04 ,  B32B15/043 ,  B32B15/18 ,  B32B15/20 ,  C23C8/12 ,  C23C8/14 ,  C23C18/1637 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1689 ,  C23C18/1696 ,  C23C18/1848 ,  C23C18/32 ,  C23C18/34 ,  C23C18/36 ,  C23C18/42 ,  C23C18/44 ,  C23C18/52 ,  C23C18/54 ,  C23C28/02 ,  C23C28/021 ,  C23C28/023 ,  C23C28/028 ,  C23C28/321 ,  C23C28/345 ,  C23C30/00 ,  C23C30/005 ,  C25D3/12 ,  H01J37/32477 ,  C22C38/44 ,  C23C16/4404 ,  C23C18/1824 ,  Y10T428/1259 ,  Y10T428/12597 ,  Y10T428/12604 ,  Y10T428/12611 ,  Y10T428/12618 ,  Y10T428/1266 ,  Y10T428/12667 ,  Y10T428/12743 ,  Y10T428/1275 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12931 ,  Y10T428/12937 ,  Y10T428/12944 ,  Y10T428/12951 ,  Y10T428/12972 ,  Y10T428/12979 ,  Y10T428/12993 ,  Y10T428/24942 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/24975 ,  Y10T428/249953 ,  Y10T428/26 ,  Y10T428/265

摘要： A laminate including a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, in which pinholes in the gold plating film layer are sealed with a passive film having a thickness of 15 nm or greater. Also disclosed is a constituent member of a semiconductor production device including the laminate and a method for producing the laminate.

公开(公告)号：US20240218517A1

公开(公告)日：2024-07-04

申请号：US18558381

申请日：2022-05-10

申请人： Atotech Deutschland GmbH & Co. KG

发明人： Frank BAYER ,  Michael MERSCHKY ,  Thorsten WEISS

IPC分类号： C23C18/20 ,  B33Y40/20 ,  C23C18/16 ,  C23C18/24 ,  C23C18/30 ,  C23C18/32 ,  C23C28/02 ,  C25D3/38 ,  C25D5/56

CPC分类号： C23C18/2086 ,  B33Y40/20 ,  C23C18/1641 ,  C23C18/24 ,  C23C18/30 ,  C23C18/32 ,  C23C18/1653 ,  C23C28/023 ,  C25D3/38 ,  C25D5/56

摘要： The present invention relates to a method, and respective use, for treating a non-metallic substrate for subsequent metallization, the method comprising step (A), optional step (B), and step (C), wherein step (C) comprises a contacting with an acidic treatment composition comprising one or more than one manganese species, characterized in that the substrate is a 3D-printed substrate.

公开(公告)号：US20240166829A1

公开(公告)日：2024-05-23

申请号：US18493335

申请日：2023-10-24

申请人： AC Products Inc.

发明人： Thomas P. Farrell ,  Bryan Vu ,  David Tomlinson ,  Peter Weissman

IPC分类号： C08J5/18 ,  B32B15/082 ,  B32B15/20 ,  B32B27/18 ,  B32B27/30 ,  C23C14/04 ,  C23C14/24 ,  C23C16/04 ,  C23C18/16

CPC分类号： C08J5/18 ,  B32B15/082 ,  B32B15/20 ,  B32B27/18 ,  B32B27/302 ,  C23C14/042 ,  C23C14/24 ,  C23C16/042 ,  C23C18/1605 ,  B29C48/154 ,  B32B2264/102 ,  B32B2270/00 ,  B32B2307/54 ,  C08J2347/00 ,  C08J2423/22

摘要： In one aspect, the present disclosure provides a polymer film with a low glass transition temperature. In one embodiment, when in contact with a metal substrate, the polymer film adheres to the metal substrate under heating and/or mechanical pressure. In one embodiment, the polymer film comprises a butadiene copolymer and a butylene polymer. In another aspect, the present disclosure further provides a method of masking a metal substrate using the polymer film. In yet another aspect, the present disclosure provides a method of chemically or electrochemically processing a metal substrate that is masked with the polymer film.

公开(公告)号：US20240141501A1

公开(公告)日：2024-05-02

申请号：US18408801

申请日：2024-01-10

申请人： Tokyo Electron Limited

发明人： Tetsuro Shirasaka ,  Naoto Nakamura

IPC分类号： C23C18/16 ,  B05B14/00 ,  G03F7/16 ,  H01L21/67

CPC分类号： C23C18/1603 ,  B05B14/00 ,  C23C18/163 ,  C23C18/1678 ,  G03F7/162 ,  H01L21/6715 ,  H01L21/67253

摘要： A controller performs an adjustment processing including: forming a film on a surface of a substrate by a film forming unit; removing a peripheral portion of the film by the film forming unit; acquiring surface information indicating a state of the surface of the substrate including the film, from which the peripheral portion has been removed, by a surface inspection unit and adjusting a cut width of the peripheral portion based on the surface information; and peeling the film, from which the peripheral portion has been removed, by the film forming unit, and a process processing including: forming the film on the surface of the substrate by the film forming unit; and removing the peripheral portion by the cut width adjusted in the adjustment processing in the film forming unit.

公开(公告)号：US11970779B2

公开(公告)日：2024-04-30

申请号：US17630011

申请日：2020-07-24

申请人： ENI S.P.A.

发明人： Edoardo Dellarole ,  Cosimo Mollica ,  Luca Magagnin ,  Federico Cuneo

IPC分类号： C23C18/32 ,  B32B15/04 ,  C23C18/16

CPC分类号： C23C18/1651 ,  B32B15/043 ,  C23C18/1662 ,  C23C18/1692 ,  C23C18/32

摘要： An electroless composite coating has a layered structure alternating a metallic NiP layer and a composite NiP layer. A system includes the electroless composite coating and a substrate. A method of preparing the coating includes depositing a metallic NiP layer and a composite NiP layer on the substrate.