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公开(公告)号:US12163236B2
公开(公告)日:2024-12-10
申请号:US17803894
申请日:2023-01-12
Inventor: Viktor Balema , Sonal Padalkar , Ihor Hlova , Tian Lan , Oleksandr Dolotko , Vitalij K. Pecharsky , Duane D. Johnson , Arjun K. Pathak , Prashant Singh
IPC: C25B11/075 , C23C18/16 , C23C18/42 , C25B1/04 , C25B11/051 , C25B11/057 , C25B11/091 , C25D3/50 , C25D5/02 , C25D13/02 , G01N27/48
Abstract: A cathode is provided for electrolysis of water wherein the cathode material comprises a multi-principal element, transition metal dichalcogenide material that has four or more chemical elements and that is a single phase, solid solution. The pristine cathode material does not contain platinum as a principal (major) component. However, a cathode comprising a transition metal dichalcogenide having platinum (Pt) nanosized islands or precipitates disposed thereon is also provided.
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公开(公告)号:US20240404879A1
公开(公告)日:2024-12-05
申请号:US18492867
申请日:2023-10-24
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor: Takashi NOMA , Shinzo ISHIBE
IPC: H01L21/768 , C23C18/30 , C23C18/42 , H01L21/683
Abstract: Implementations of a method of electroless deposition may include providing a semiconductor substrate including a first largest planar surface and a second largest planar surface; forming a backmetal layer on the second largest planar surface; attaching a tape over the backmetal layer; and electroless depositing a metal layer on a pad included on the first largest planar surface. The method may include, after electroless depositing, removing the tape; and after removing the tape, baking the semiconductor substrate.
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公开(公告)号:US11668010B2
公开(公告)日:2023-06-06
申请号:US15354733
申请日:2016-11-17
Applicant: C3Nano Inc.
Inventor: Yongxing Hu , Xiqiang Yang , Ying-Syi Li , Alexander Seung-il Hong , Melanie Mariko Inouye , Yadong Cao , Ajay Virkar
IPC: C23C18/44 , C23C18/54 , C09D133/06 , C23C18/16 , B32B27/20 , B32B9/04 , B32B27/28 , B32B27/08 , B32B15/04 , B32B15/08 , B82Y30/00 , C09D11/52 , C09D101/02 , C09D139/06 , C23C18/42 , H01B1/22 , H01B13/30 , H05K1/02 , H05K1/09 , H05K3/10 , H05K3/12 , B32B15/01 , C09D105/08 , B82Y20/00
CPC classification number: C23C18/44 , B32B9/045 , B32B15/018 , B32B15/04 , B32B15/08 , B32B27/08 , B32B27/20 , B32B27/28 , B82Y30/00 , C09D11/52 , C09D101/02 , C09D133/06 , C09D139/06 , C23C18/1635 , C23C18/1637 , C23C18/42 , C23C18/54 , H01B1/22 , H01B13/30 , H05K1/02 , H05K1/0274 , H05K1/097 , H05K3/10 , H05K3/105 , H05K3/1283 , B32B2255/10 , B32B2255/26 , B32B2262/103 , B32B2262/12 , B32B2307/202 , B32B2307/412 , B32B2307/414 , B32B2457/20 , B82Y20/00 , C09D105/08 , H05K2201/0108 , H05K2201/026 , Y10T428/12444 , Y10T428/12479 , Y10T428/12486 , Y10T428/12889 , Y10T428/12896
Abstract: Metal nanowires with uniform noble metal coatings are described. Two methods, galvanic exchange and direct deposition, are disclosed for the successful formation of the uniform noble metal coatings. Both the galvanic exchange reaction and the direct deposition method benefit from the inclusion of appropriately strong binding ligands to control or mediate the coating process to provide for the formation of a uniform coating. The noble metal coated nanowires are effective for the production of stable transparent conductive films, which may comprise a fused metal nanostructured network.
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公开(公告)号:US11657925B2
公开(公告)日:2023-05-23
申请号:US17105352
申请日:2020-11-25
Applicant: Hamilton Sundstrand Corporation
Inventor: Ying She , Sameh Dardona , Wayde R. Schmidt
CPC classification number: H01B1/04 , C23C18/1882 , C23C18/1893 , C23C18/38 , C23C18/42
Abstract: A method of making a composite material includes disposing a carbon-based particulate material, such as graphene or carbon nanotubes, in an activation solution and activating surfaces of the carbon-based particulate material using the activation solution. Once the surfaces of the carbon-based particulate material have been activated, a metallic coating is applied to the activated surfaces to form a composite material. The composite material is then recovered as a particulate material formed having carbon-based particulate material with a metallic coating that is suitable for fusing together for forming electrical conductors, such as with an additive manufacturing technique.
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公开(公告)号:US20230069914A1
公开(公告)日:2023-03-09
申请号:US17799957
申请日:2021-02-03
Applicant: JAPAN PURE CHEMICAL CO., LTD.
Inventor: Kenji Yoshiba , Yusuke Yaguchi , Hiroshi Minowa
Abstract: In the method for producing a plating stack, a plating layer A mainly composed of a second metal is deposited on an object to be plated S mainly composed of a first metal by a substitution reaction, then a plating layer B mainly composed of a third metal is deposited on the plating layer A, and then a plating layer C mainly composed of the second metal, the third metal, or a fourth metal is deposited on the plating layer B by a redox reaction. A concrete configuration of plating layers includes, for example, the plating layer A is gold, platinum or silver, the plating layer B is palladium, and the plating layer C is palladium.
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公开(公告)号:US20230065609A1
公开(公告)日:2023-03-02
申请号:US17799962
申请日:2021-02-03
Applicant: JAPAN PURE CHEMICAL CO., LTD.
Inventor: Kenji Yoshiba , Yusuke Yaguchi , Hiroshi Minowa
Abstract: The problem of the present invention is to provide a plating stack (a stack of plating films) for applying on surface of conductor circuits or the like, the plating stack can maintain high bond strength when solder is bonded on that and can be produced stably.
In the method for producing a plating stack of the present invention, a plating layer A mainly composed of a second metal is deposited on an object to be plated S mainly composed of a first metal by a substitution reaction, then a plating layer B mainly composed of palladium is deposited on the plating layer A, and then a plating layer C mainly composed of nickel is deposited on the plating layer B by a redox reaction. The first metal is, for example, copper. The second metal is, for example, gold, platinum or silver.-
公开(公告)号:US11370662B2
公开(公告)日:2022-06-28
申请号:US16230070
申请日:2018-12-21
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Luigi Colombo , Nazila Dadvand , Benjamin Stassen Cook , Archana Venugopal
IPC: C01B21/064 , C23C16/34 , C23C18/32 , C23C18/16 , C23C18/36 , C23C18/28 , C23C18/30 , C23C18/20 , G03F1/60 , G03F1/20 , C23C18/38 , C23C18/42
Abstract: A microstructure comprises a plurality of interconnected units wherein the units are formed of hexagonal boron nitride (h-BN) tubes. The graphene tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, depositing an h-BN precursor on the metal microlattice, converting the h-BN precursor to h-BN, and removing the metal microlattice.
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公开(公告)号:US20220186377A1
公开(公告)日:2022-06-16
申请号:US17442372
申请日:2020-03-17
Applicant: IDEMITSU KOSAN CO.,LTD.
Inventor: Satoshi HACHIYA , Fumioki FUKATSU
Abstract: An electroless plating undercoat film comprising (A) a conductive polymer and further comprising (B) a reactant of a polyol resin having an acid value and a polyisocyanate compound, wherein the acid value is 0.1 mgKOH/g to 30 mgKOH/g.
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公开(公告)号:US11335595B2
公开(公告)日:2022-05-17
申请号:US16481995
申请日:2018-02-07
Applicant: Mitsubishi Electric Corporation
Inventor: Masatoshi Sunamoto , Ryuji Ueno
Abstract: Provided is a semiconductor element including: a front-back conduction-type substrate including a front-side electrode and a back-side electrode; and an electroless plating layer formed on at least one of the electrodes of the front-back conduction-type substrate. The electroless plating layer includes: an electroless nickel-phosphorus plating layer; and an electroless gold plating layer formed on the electroless nickel-phosphorus plating layer, and has a plurality of recesses formed on a surface thereof to be joined with solder.
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公开(公告)号:US20220056591A1
公开(公告)日:2022-02-24
申请号:US17413559
申请日:2019-11-29
Inventor: Jong-In HAN , Jieun SON , Cafer YAVUZ , Youngran HONG
Abstract: The present invention relates to a method for recovering a precious metal selectively adsorbed on a porous porphyrin polymer, and to an electroless plating method capable of recovering a precious metal in a film form by desorbing and leaching the precious metal without an additional oxidizing agent and using same as a plating solution to reduce the precious metal on the surface of a substrate without an additional reducing agent.
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