公开(公告)号：US06709610B2

公开(公告)日：2004-03-23

申请号：US09768494

申请日：2001-01-24

申请人： Peter C. Van Buskirk ,  Frank DiMeo, Jr. ,  Peter S. Kirlin ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Frank DiMeo, Jr. ,  Peter S. Kirlin ,  Thomas H. Baum

IPC分类号： C23F130

CPC分类号： H01L28/65 ,  C07F15/004 ,  C23C16/18 ,  C23C16/40 ,  C23F1/30 ,  C30B25/02 ,  C30B29/02 ,  C30B29/16 ,  H01L21/02071 ,  H01L21/32136 ,  H01L28/55 ,  Y10S438/906

摘要： A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF2, SF6, SiF4, Si2F6 or SiF3 and SiF2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.

摘要翻译： 通过使微电子器件结构与包括反应性卤化物组合物的清洁气体接触，从微电子器件结构去除包含选自铂，钯，铱和铑中的至少一种金属的贵金属残渣的方法， XeF 2，SF 6，SiF 4，Si 2 F 6或SiF 3和SiF 2基团。 该方法可以以分批清洁模式进行，其中清洁气体的新鲜电荷依次引入到含有残留物微电子器件结构的室中。 在与残留物反应之后，每个电荷从室中吹扫，并持续进行充电/净化，直到残余物至少部分地被去除到所需的程度。 或者，清洁气体可以连续流过包含微电子器件结构的室，直到贵金属残留物被充分除去。