公开(公告)号：US06692576B2

公开(公告)日：2004-02-17

申请号：US10243579

申请日：2002-09-13

申请人： Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs

发明人： Michael W. Halpin ,  Mark R. Hawkins ,  Derrick W. Foster ,  Robert M. Vyne ,  John F. Wengert ,  Cornelius A. van der Jeugd ,  Loren R. Jacobs

IPC分类号： C23L1600

CPC分类号： C23C16/4586 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68792 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.

摘要翻译： 一种晶片支撑系统，其包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。 从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开地支撑晶片。 吹扫气体被引入到分段基座的底部，并且穿过气体流动通道，在凹槽中的至少一个圆形阵列的出口和间隔开的晶片之下排出。 吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。 气体通过中空驱动轴输送到基座下方的多臂感受器支架中。 支撑臂将吹扫气体从驱动轴传导到分段基座中的气体通道。 气体通道被布置成在散布在晶片之下之前加热吹扫气体。 可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。 共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。

公开(公告)号：US06444039B1

公开(公告)日：2002-09-03

申请号：US09520108

申请日：2000-03-07

申请人： Tue Nguyen

发明人： Tue Nguyen

IPC分类号： C23L1600

CPC分类号： C23C16/45565 ,  C23C16/455 ,  H01L21/67017

摘要： A vapor supply apparatus, for use in a semiconductor device manufacturing process, provides a three-dimensional showerhead for supplying various precursors to a reaction chamber. The three-dimensional showerhead comprises an inverted-cup structure having double walls, an outer wall and an inner wall, with the double walls defining a first interior volume and the inner wall defining an exterior cavity, the inverted-cup structure further has a plurality of first inlet ports connected to the outer wall for introducing first precursors into the first interior volume and a plurality of first outlet ports at the inner wall for discharging the first precursor vapor from the first interior volume to the exterior cavity. The three-dimensional showerhead confines the precursor vapor inside the external cavity to modify the processed film characteristics.

摘要翻译： 用于半导体器件制造工艺的蒸气供应装置提供一种用于向反应室供应各种前体的三维喷头。 三维花洒包括具有双壁，外壁和内壁的倒杯结构，双壁限定第一内部容积，内壁限定外部空腔，倒杯结构还具有多个 连接到外壁的第一入口端口用于将第一前体引入第一内部空间中，以及在内壁处的多个第一出口端口，用于将第一前体蒸气从第一内部空间排出到外部空腔。 三维喷头将前体蒸汽限制在外部空腔内，以改善加工膜特性。

公开(公告)号：US06264752B1

公开(公告)日：2001-07-24

申请号：US09113435

申请日：1998-07-10

申请人： Gary L. Curtis ,  Raymon F. Thompson

发明人： Gary L. Curtis ,  Raymon F. Thompson

IPC分类号： C23L1600

CPC分类号： H01L21/67017 ,  B08B3/04 ,  H01L21/32134 ,  H01L21/6708

摘要： An apparatus for processing a microelectronic workpiece in a micro-environment is set forth. The apparatus includes a first chamber member having an interior chamber wall and a second chamber member having an interior chamber wall. The first and second chamber members are adapted for relative movement between a loading position in which the first and second chamber members are distal one another and a processing position in which the first and second chamber members are proximate one another to define a processing chamber. At least one workpiece support assembly is disposed between the first and second chamber members for supporting the microelectronic workpiece. The workpiece support assembly is operable to space the workpiece a first distance, x1, from an interior chamber wall of at least one of the first and second chamber members when the first and second chamber members are in the loading position and to space the workpiece a second distance, x2, from the interior chamber wall when the first and second chamber members are in the processing position, wherein x1>x2.

摘要翻译： 阐述了在微环境中处理微电子工件的装置。 该装置包括具有内部室壁的第一室构件和具有内部室壁的第二室构件。 第一和第二室构件适于在第一和第二室构件彼此远离的装载位置和第一和第二室构件彼此靠近以限定处理室的处理位置之间的相对运动。 至少一个工件支撑组件设置在第一和第二室构件之间，用于支撑微电子工件。 工件支撑组件可操作以当第一和第二室构件处于装载位置时将工件与第一和第二室构件中的至少一个室内构件的内室壁隔开第一距离x1，并使工件空间 第二距离x2，当第一和第二腔室构件处于加工位置时，其中x1> x2。

公开(公告)号：US06245151B1

公开(公告)日：2001-06-12

申请号：US09463124

申请日：2000-04-06

申请人： Gautam Bhandari ,  Dennis F. Brestovansky

发明人： Gautam Bhandari ,  Dennis F. Brestovansky

IPC分类号： C23L1600

CPC分类号： C23C16/4483 ,  C23C16/448 ,  C23C16/52

摘要： A liquid delivery system (10) for vaporization of a liquid pecursor to form precursor vapor for transport to a deposition zone (36). The system includes a vaporization chamber (12), a porous vaporization element (60) positioned in the vaporization chamber (12) to define an upstream portion (20) of the vaporization chamber (12) upstream of the porous vaporization element (60), and a downstream portion (22) of the vaporization chamber (12) downstream of the porous vaporization element (60) therein, a vaporization element heater (59), a liquid precursor supply (26) for introducing liquid precursor to the vaporization element (60) for vaporization thereof, a precursor vapor discharge (16) from the chamber, and means (46, 48, 50, 52, 54, 56 and 58) for diverting at least a part of the fluid in the upstream portion of the vaporization chamber (12) past the porous vaporization element (60), to stabilize fluid pressure in the upstream portion of the vaporization chamber (12) under conditions tending to perturb such fluid pressure.

摘要翻译： 一种液体输送系统（10），用于蒸发液体青绿色，以形成用于输送到沉积区（36）的前体蒸汽。 该系统包括蒸发室（12），位于蒸发室（12）中的多孔蒸发元件（60），以限定多孔蒸发元件（60）上游的蒸发室（12）的上游部分（20） 和蒸发元件（60）的下游的蒸发室（12）的下游部分（22），蒸发元件加热器（59），用于将液体前体引入蒸发元件（60）的液体前体供应源 ），用于使其蒸发，来自所述室的前体蒸汽排放（16）和用于将所述蒸发室的上游部分中的至少一部分流体转向的装置（46,48,50,52,54,56和58） （12）通过所述多孔蒸发元件（60），以在趋于扰乱所述流体压力的条件下稳定所述蒸发室（12）的上游部分中的流体压力。

公开(公告)号：US06589349B2

公开(公告)日：2003-07-08

申请号：US09867001

申请日：2001-05-29

申请人： Akihide Kashiwagi ,  Toyotaka Kataoka ,  Toshihiko Suzuki

发明人： Akihide Kashiwagi ,  Toyotaka Kataoka ,  Toshihiko Suzuki

IPC分类号： C23L1600

CPC分类号： C30B29/06 ,  C23C8/02 ,  C23C8/16 ,  C30B33/005 ,  H01L21/31612

摘要： An apparatus for forming a silicon oxide film which has a process chamber and is for thermally oxidizing a surface of a silicon layer by introducing water vapor into the process chamber, and which further has dew-formation prevention/evaporation means for preventing dew formation in the process chamber and/or evaporating dew in the process chamber.

摘要翻译： 一种用于形成氧化硅膜的装置，其具有处理室，用于通过将水蒸气引入处理室来热氧化硅层的表面，并且还具有防止/蒸发装置，用于防止在 处理室和/或在处理室中蒸发出露水。

公开(公告)号：US06573478B2

公开(公告)日：2003-06-03

申请号：US10118361

申请日：2002-04-08

申请人： Karl M. Robinson ,  David L. Chapek

发明人： Karl M. Robinson ,  David L. Chapek

IPC分类号： C23L1600

CPC分类号： F27B17/00

摘要： A thermal reflow processing system has a rotatable structure to which articles having a reflowable surface are attached. The structure is coupled to a drive motor which causes the structure to rotate at speeds which generate centripetal forces in excess of that of gravity. The system is equipped with at least one radiant heat source. As the articles are being subjected to a centripetal force, the surface is heated by the radiant heat source.

摘要翻译： 热回流处理系统具有可旋转的结构，具有可回流表面的物品被附接到该结构。 该结构联接到驱动马达，其使结构以产生超过重力的向心力的速度旋转。 该系统配备有至少一个辐射热源。 当制品受到向心力时，表面被辐射热源加热。

公开(公告)号：US06478875B1

公开(公告)日：2002-11-12

申请号：US09518224

申请日：2000-03-02

申请人： Sanjay Sampath ,  Jiri Matejicek

发明人： Sanjay Sampath ,  Jiri Matejicek

IPC分类号： C23L1600

CPC分类号： C23C4/12 ,  C23C24/04

摘要： An apparatus for performing in-situ curvature measurement of a substrate during a deposition process is provided which includes a clamp for retaining the substrate near one end while leaving the opposite end free. A plurality of displacement sensors are arranged in a spaced apart fashion along the length of the substrate and are directed to a surface of the substrate opposite a surface to be coated. Each sensor provides a signal to a computer corresponding to a position of the substrate relative to the sensor. The computer receives and stores data from the displacement sensors to determine a stress evolution during a deposition process and to determine a coating modulus based upon a resultant curvature of the substrate.

摘要翻译： 提供一种用于在沉积工艺期间执行基底的原位曲率测量的装置，其包括用于将基板保持在一端附近的夹具，同时使相对端保持自由。 多个位移传感器沿着衬底的长度以间隔的方式布置并且被引导到衬底的与待涂覆的表面相对的表面。 每个传感器向计算机提供对应于衬底相对于传感器的位置的信号。 计算机接收和存储来自位移传感器的数据以确定沉积过程期间的应力演变，并且基于所得到的基底的曲率确定涂层模量。

公开(公告)号：US06258171B1

公开(公告)日：2001-07-10

申请号：US09491590

申请日：2000-01-25

申请人： Vishnu Kumar Agarwal

发明人： Vishnu Kumar Agarwal

IPC分类号： C23L1600

CPC分类号： C23C16/4407 ,  C23C16/4405 ,  C23C16/4485

摘要： A direct liquid injection system and process which has on-line cleaning of the vaporizers without the need for shutting down the CVD process and thus eliminating down time is provided. The cleaning process includes the steps of providing at least one metalorganic precursor to a first vaporizer to produce a vapor containing the at least one precursor; transporting the vapor to a deposition chamber; periodically interrupting the supply of the at least one metalorganic precursor to the first vaporizer; providing the at least one metalorganic precursor to a second vaporizer to produce a vapor containing the at least one precursor; transporting the vapor to the deposition chamber; and during at least a portion of the time when the supply of the metalorganic precursor is interrupted to the first vaporizer, providing a cleaning fluid (either liquid solvent or cleaning gas plasma) to the first vaporizer, which fluid is effective to at least partially remove deposits of the metalorganic precursor. The process may be either carried out as a batch process, or more preferably, as a continuous process to avoid the need to shut down the system.

摘要翻译： 提供了直接液体注入系统和方法，其在不需要关闭CVD过程并因此消除停机时间的情况下在线清洁蒸发器。 清洁方法包括以下步骤：向第一蒸发器提供至少一种金属有机前体以产生含有至少一种前体的蒸气; 将蒸气输送到沉积室; 周期性地中断所述至少一种金属有机前体供应到所述第一蒸发器; 将至少一种金属有机前体提供给第二蒸发器以产生含有所述至少一种前体的蒸气; 将蒸气输送到沉积室; 并且在金属有机前体的供应被中断到第一蒸发器的至少一部分时间内，向第一蒸发器提供清洁流体（液体溶剂或清洁气体等离子体），哪种流体有效地至少部分地去除 金属有机前体的沉积物。 该过程可以作为批处理进行，或者更优选地作为连续过程进行，以避免关闭系统的需要。

公开(公告)号：US06217937B1

公开(公告)日：2001-04-17

申请号：US09115520

申请日：1998-07-15

申请人： J. Richard Shealy

发明人： J. Richard Shealy

IPC分类号： C23L1600

CPC分类号： C23C16/45561 ,  C23C16/44 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/455 ,  C30B25/08 ,  C30B25/14

摘要： A cold wall reactor having inner and outer walls defining an annular reactor cell. A susceptor is rotatably mounted in the cell, and received wafers to be treated by gases flowing axially through the cell. The outer wall of the reactor is normally cooled, but is heated by a suitable furnace to provide a hot wall reactor when cleaning of the cell is required.

摘要翻译： 一个具有限定环形反应器电池的内壁和外壁的冷壁反应器。 基座可旋转地安装在电池中，并且接收到的晶片将被轴向通过电池的气体处理。 反应器的外壁通常被冷却，但是由合适的炉加热，以便在需要清洁电池时提供热壁反应器。