公开(公告)号：US10274819B2

公开(公告)日：2019-04-30

申请号：US14615185

申请日：2015-02-05

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Pei-Cheng Hsu ,  Chih-Tsung Shih ,  Jeng-Horng Chen ,  Chih-Cheng Lin ,  Hsin-Chang Lee ,  Shinn-Sheng Yu ,  Ta-Cheng Lien ,  Anthony Yen

IPC分类号： B44C1/22 ,  C25F3/00 ,  C23F1/00 ,  C23F3/00 ,  G03F1/62

摘要： A method for fabricating a pellicle for EUV lithography processes includes placing a hard mask in contact with a surface of a substrate. In some embodiments, the hard mask is configured to pattern the surface of the substrate to include a first region and a second region surrounding the first region. By way of example, while the mask in positioned in contact with the substrate, an etch process of the substrate is performed to etch the first and second regions into the substrate. Thereafter, an excess substrate region is removed so as to separate the etched first region from the excess substrate region. In various embodiments, the etched and separated first region serves as a pellicle for an extreme ultraviolet (EUV) lithography process.

公开(公告)号：US10214823B2

公开(公告)日：2019-02-26

申请号：US14775016

申请日：2014-03-11

申请人： United Technologies Corporation

发明人： Rhonda R. Willigan ,  Lei Chen ,  Mark R. Jaworowski

IPC分类号： B32B3/18 ,  C25D3/44 ,  C25D3/66 ,  C25D5/44 ,  C23C18/16 ,  C23C18/54 ,  C25F3/00 ,  C25F5/00 ,  B32B15/01 ,  C23C18/31 ,  C23F1/00 ,  C25F3/02

摘要： A coated metal component includes an aluminum alloy substrate and a protective aluminum coating on a substrate. An interfacial boundary layer between the coating and substrate enhances coating adhesion. The boundary layer includes isolated regions of copper or tin produced by a double zincating process. The protective aluminum coating exhibits improved adhesion and is formed by electrodeposition in an ionic liquid.

公开(公告)号：US10161055B2

公开(公告)日：2018-12-25

申请号：US15087263

申请日：2016-03-31

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Yuki Sato ,  Motoki Hiraoka ,  Hiroshi Yanagimoto ,  Hiroki Usui

IPC分类号： C23F1/00 ,  C03C15/00 ,  C03C25/68 ,  C25F3/00 ,  C25D5/08 ,  C25D3/00 ,  H05K3/00 ,  C25D5/02 ,  C25D7/00 ,  C25D17/00 ,  C25D17/12 ,  C25D21/10 ,  C25F3/02 ,  C25F7/00 ,  C23C18/16 ,  C23C18/30

摘要： A method of forming a wiring pattern includes: a) forming a metal underlayer including a first underlying wiring layer which is in contact with an electrode, a second underlying wiring layer which is not in contact with the electrode, and an underlying connection layer which connects the first underlying wiring layer to the second underlying wiring layer; b) forming a metal plating layer on the metal underlayer through electroplating; and c) removing a metal connection portion through etching. The metal connection portion is the underlying connection layer covered with the metal plating layer. The etching includes bringing a solid electrolyte material that contains a solution into which metal of the metal connection portion is dissolved, into contact with the metal connection portion and applying a voltage between the metal connection portion and the solid electrolyte material.

公开(公告)号：US10077382B1

公开(公告)日：2018-09-18

申请号：US15450170

申请日：2017-03-06

申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.

发明人： Hongyu Wang ,  Murali G. Theivanayagam

IPC分类号： H01L21/302 ,  H01L21/461 ,  C03C15/00 ,  C03C25/68 ,  C25F3/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  C09G1/04 ,  C23C16/02 ,  H01L21/321 ,  C09G1/00

摘要： The invention is a method for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing Co0. The method mixes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (α) into a slurry containing 0.5 to 3 wt % colloidal silica particles (β), the colloidal silica particles containing primary particles, 0.5 to 2 wt % complexing agent (γ) selected from at least one of L-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-N,N′-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-N,N,N′,N′-tetraacetic acid, and balance water having a pH of 5 to 9 to create a polishing slurry for the semiconductor substrate. Oxidizing at least a surface portion of the Co0 to Co+3 of the semiconductor substrate to prevent runaway dissolution of the Co0 reduces polishing defects in the semiconductor substrate. Polishing the semiconductor substrate with a polishing pad removes the surface portion of the semiconductor substrate oxidized to Co+3.

公开(公告)号：US09896770B2

公开(公告)日：2018-02-20

申请号：US15383556

申请日：2016-12-19

申请人： Applied Materials, Inc.

发明人： Benjamin Schmiege ,  Nitin K. Ingle ,  Srinivas D. Nemani ,  Jeffrey W. Anthis ,  Xikun Wang ,  Jie Liu ,  David Benjaminson

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25F3/00 ,  C23F1/12 ,  H01J37/32

CPC分类号： C23F1/12 ,  C23F4/00 ,  C30B33/12 ,  H01J37/32009 ,  H01J2237/334

摘要： Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.

公开(公告)号：US09522820B2

公开(公告)日：2016-12-20

申请号：US12742598

申请日：2008-11-12

申请人： Michelle Khine ,  Chi-shuo Chen ,  Anthony Grimes ,  David Nate Breslauer ,  Luke Lee ,  Michael Dunlap ,  Ajay Gopinathan ,  Sayantani Ghosh

发明人： Michelle Khine ,  Chi-shuo Chen ,  Anthony Grimes ,  David Nate Breslauer ,  Luke Lee ,  Michael Dunlap ,  Ajay Gopinathan ,  Sayantani Ghosh

IPC分类号： C25F3/00 ,  B81C1/00 ,  B01F5/00 ,  B01F5/06 ,  B01F13/00 ,  B01L3/00 ,  H01L21/02 ,  B82Y40/00

CPC分类号： B01L3/502707 ,  B01F5/0057 ,  B01F5/0646 ,  B01F5/0647 ,  B01F13/0059 ,  B01F2215/0037 ,  B01L2200/12 ,  B01L2300/0816 ,  B01L2300/0867 ,  B01L2300/0887 ,  B81B1/002 ,  B81B2201/051 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C1/00071 ,  B81C2201/0152 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/02269 ,  H01L21/02271

摘要： A method is provided to prepare one or more microfluidic channels on a receptive material by applying an image-forming material to a heat sensitive thermoplastic receptive material in a designed pattern and heating the material under conditions that reduce the size of the thermoplastic receptive material by at least about 60%. In an alternative aspect, the microfluidic channels on receptive material are prepared by etching a designed pattern into a heat sensitive thermoplastic material support and then heating the material under conditions that reduce the size of the thermoplastic receptive material by at least about 60%.

摘要翻译： 提供了一种通过将图像形成材料以设计图案施加到热敏性热塑性接受材料上并在加热材料的条件下，通过在下述条件下加热该材料的方法来制备接受材料上的一个或多个微流体通道： 至少约60％。 在另一方面，接收材料上的微流体通道是通过将设计的图案蚀刻成热敏热塑性材料载体，然后在将热塑性接受材料的尺寸减小至少约60％的条件下加热材料来制备的。

公开(公告)号：US09499919B2

公开(公告)日：2016-11-22

申请号：US14074103

申请日：2013-11-07

申请人： MetCon, LLC

发明人： James L. Clasquin ,  Thomas J. Christensen

IPC分类号： C25F3/16 ,  C25F1/00 ,  C25F3/00

CPC分类号： C25F3/16 ,  C25F1/00 ,  C25F3/00

摘要： An aqueous electrolyte solution including a concentration of citric acid in the range of about 1.6 g/L to about 982 g/L and an effective concentration of ammonium bifluoride (ABF), and being substantially free of a strong acid. Methods of treating the surface of a non-ferrous metal workpiece include exposing the surface to a bath of an aqueous electrolyte solution including a concentration of citric acid less than or equal to about 300 g/L and a concentration of ammonium bifluoride greater than or equal to about 10 g/L, and having no more than about 3.35 g/L of a strong acid, controlling the temperature of the bath to be greater than or equal to about 54° C., connecting the workpiece to the anode of a DC power supply and immersing a cathode of the DC power supply in the bath, and applying a current across the bath.

公开(公告)号：US09334197B2

公开(公告)日：2016-05-10

申请号：US14131057

申请日：2012-07-06

申请人： Dai Inamori ,  Takafumi Kawano

发明人： Dai Inamori ,  Takafumi Kawano

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25F3/00 ,  C04B41/91 ,  C04B35/117 ,  C04B35/65 ,  C04B35/44 ,  C04B35/653 ,  C09K11/77 ,  B24B37/04 ,  C04B41/00 ,  C04B41/53 ,  H01L33/50 ,  C04B111/80

CPC分类号： C04B41/91 ,  B24B37/042 ,  C04B35/117 ,  C04B35/44 ,  C04B35/652 ,  C04B35/653 ,  C04B41/009 ,  C04B41/5346 ,  C04B2111/80 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/6581 ,  C04B2235/764 ,  C04B2235/963 ,  C09K11/7774 ,  H01L33/501 ,  H01L2224/13 ,  H01L2924/12044 ,  C04B35/10 ,  H01L2924/00

摘要： A method for producing a ceramic composite for light conversion including first step of forming the step level difference such that an oxide crystal phase other than Al2O3 phase of a surface of a solidified body is in a convex shape relative to an Al2O3 phase by subjecting the surface of the solidified body having a structure in which the Al2O3 phase and the oxide crystal phase other than Al2O3 phase are continuously and three-dimensionally entangled with each other to dry etching, and a second step of reducing the step level difference by subjecting the solidified body subjected to the dry etching to CMP or MP.

摘要翻译： 一种用于光转换的陶瓷复合材料的制造方法，其特征在于，包括：形成所述台阶级差的第一工序，使得相对于Al 2 O 3相，通过使所述表面 具有将Al 2 O 3相和除了Al 2 O 3相以外的氧化物结晶相连续地且三维地缠结在一起的结构的凝固体进行干法蚀刻，以及第二步骤，通过使凝固体 对CMP或MP进行干蚀刻。

公开(公告)号：US09076657B2

公开(公告)日：2015-07-07

申请号：US13924547

申请日：2013-06-22

申请人： Rohm and Haas Electronic Materials LLC

发明人： Gary Hamm ,  Jason A. Reese ,  George R. Allardyce

IPC分类号： C25D5/34 ,  H01L21/288 ,  H01L21/465 ,  C25D11/00 ,  C25D11/02 ,  C25F3/12 ,  C25F3/00 ,  H01L23/00 ,  C25D11/32 ,  C25D5/00 ,  C25D5/12 ,  C25D7/12 ,  H01L31/0224 ,  H01L31/18 ,  C25D3/12

CPC分类号： H01L24/03 ,  C25D3/12 ,  C25D5/00 ,  C25D5/12 ,  C25D7/123 ,  C25D11/32 ,  C25F3/12 ,  H01L31/022425 ,  H01L31/1804 ,  H01L2924/12036 ,  H01L2924/12042 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.

摘要翻译： 半导体在含有二氟化物和镍离子源的溶液中进行电化学蚀刻。 电化学蚀刻可以在纳米范围内在​​半导体的表面中形成孔。 然后将蚀刻的半导体镀镍。

公开(公告)号：US09068273B2

公开(公告)日：2015-06-30

申请号：US13157867

申请日：2011-06-10

申请人： Hong Wang ,  Kenneth Tsai

发明人： Hong Wang ,  Kenneth Tsai

IPC分类号： C25F3/00 ,  C25F3/02 ,  C25F1/00 ,  C25F1/02 ,  C25F5/00 ,  C23C14/34 ,  C23F1/36 ,  C22B7/00

CPC分类号： C25F5/00 ,  C22B7/007 ,  C23C14/3414 ,  C23F1/36 ,  Y02P10/234

摘要： A method of cleaning metal-containing deposits from a metal surface of a process chamber component includes immersing the metal surface in an electrochemical cleaning bath solution. A negative electrical bias is applied to the metal surface to electrochemically clean the metal-containing deposits from the metal surface. The cleaning method is capable of removing metal-containing deposits such as tantalum-containing deposits from the metal surface substantially without eroding the surface, and may be especially advantageous in the cleaning of components having textured surfaces.

摘要翻译： 从处理室部件的金属表面清洗含金属沉积物的方法包括将金属表面浸入电化学清洗浴溶液中。 对金属表面施加负电偏压以电化学地从金属表面清洁含金属沉积物。 清洁方法能够从金属表面去除含金属沉积物如含钽沉积物，而不会侵蚀表面，并且在清洁具有纹理表面的部件方面特别有利。