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公开(公告)号：US11618971B2
公开(公告)日：2023-04-04
申请号：US17037060
申请日：2020-09-29
申请人： SUMCO Corporation
发明人： Keiichi Takanashi , Ippei Shimozaki
摘要： A crystal puller apparatus comprises a pulling assembly to pull a crystal from a silicon melt at a pull speed; a crucible that contains the silicon melt; a heat shield above a surface of the silicon melt; a lifter to change a gap between the heat shield and the surface of the silicon melt; and one or more computing devices to determine an adjustment to the gap using a Pv-Pi margin, at a given length of the crystal, in response to a change in the pull speed. The computer-implemented method by a computing device comprises determining a pull-speed command signal to control a diameter of the crystal; determining a lifter command signal to control a gap between a heat shield and a surface of a silicon melt from which the crystal is grown; and determining an adjustment to the gap, in response to a different pull-speed, using a Pv-Pi margin.
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公开(公告)号：US11486054B2
公开(公告)日：2022-11-01
申请号：US16817142
申请日：2020-03-12
发明人： Qiankun Liu , Fan Qi , Fengbo Wu , Jianyun Yu , Pin-Hui Hsieh
摘要： A method for growing a crystal boule includes the steps of: periodically pulling upwardly a seed crystal dipped into a melt in a crucible to grow a first neck of the crystal boule below the seed crystal; and continuously pulling upwardly the seed crystal and the first neck of the crystal boule to grow a second neck of the crystal boule below the first neck.
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公开(公告)号：US20220228291A1
公开(公告)日：2022-07-21
申请号：US17658049
申请日：2022-04-05
摘要： A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.
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公开(公告)号：US20220213614A1
公开(公告)日：2022-07-07
申请号：US17606694
申请日：2020-01-16
发明人： Weimin SHEN , Gang WANG , Hanyi HUANG , Yun LIU
摘要： A semiconductor crystal growth method and device are provided. The method comprises: obtaining an initial position of a graphite crucible when used in a semiconductor crystal growth process for the first time; obtaining a current production batch of the graphite crucible which characterizes a number of times of growth processes performed by the graphite crucible so far; and loading polysilicon raw materials into a quartz crucible sleeved in the graphite crucible based on the current production batch, wherein a total weight of the materials is called a charging amount, and the charging amount is adjusted based on the current production batch to keep an initial position of a silicon melt liquid surface in the quartz crucible stable while keeping the initial position of the graphite crucible unchanged. The present invention ensures the stability of each parameter in the crystal pulling process, and enhances the crystal pulling speed and quality.
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公开(公告)号：US11377755B2
公开(公告)日：2022-07-05
申请号：US16607205
申请日：2018-03-29
申请人： SUMCO CORPORATION
摘要： An n-type silicon single crystal production method of pulling up a silicon single crystal from a silicon melt containing red phosphorus as a principal dopant and growing the silicon single crystal by the Czochralski process, the method including: controlling electrical resistivity at a start position of a straight body portion of the silicon single crystal to 0.80 mΩcm or more and 1.05 mΩcm or less; and sequentially lowering the electrical resistivity of the silicon single crystal as the silicon single crystal is up and grown, thereby adjusting electrical resistivity of a part of the silicon single crystal to 0.5 mΩm or more and less than 0.6 mΩcm.
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公开(公告)号：US11371164B2
公开(公告)日：2022-06-28
申请号：US16499165
申请日：2017-11-09
发明人： Akira Noda , Keita Kawahira , Ryuichi Hirano
摘要： Provided is a large diameter InP single crystal substrate having a diameter of 75 mm or more, which can achieve a high electrical activation rate of Zn over a main surface of the substrate even in a highly doped region having a Zn concentration of 5×1018 cm−3 or more; and a method for producing the same. An InP single crystal ingot is cooled such that a temperature difference of 200° C. is decreased for 2 to 7.5 minutes, while rotating the InP single crystal ingot at a rotation speed of 10 rpm or less, and the cooled InP single crystal ingot is cut into a thin plate, thereby allowing production of the InP single crystal substrate having an electrical activation rate of Zn of more than 85% over the main surface of the substrate even in a highly doped region having a Zn concentration of 5×1018 cm−3 or more.
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公开(公告)号：US20220154365A1
公开(公告)日：2022-05-19
申请号：US17455347
申请日：2021-11-17
摘要： A measurement system includes a reflector defining a central passage and an opening, a measurement assembly, and a controller. The measurement assembly includes a run pin having a head that is visible through the opening, a camera to capture images through the opening in the reflector, and a laser to transmit coherent light through the opening to the head of the run pin to produce a reflection of the run pin on the surface of the silicon melt. The controller is programmed to control the laser to direct coherent light from the laser to the run pin, control the camera capture images through the opening while the coherent light is directed at the run pin, and determine a distance between the surface of the silicon melt and a bottom surface of the reflector based on a location of the reflection of the run pin in the captured images.
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公开(公告)号：US20220145493A1
公开(公告)日：2022-05-12
申请号：US17125590
申请日：2020-12-17
摘要： Methods for preparing single crystal silicon substrates for epitaxial growth are disclosed. The methods may involve control of the (i) a growth velocity, v, and/or (ii) an axial temperature gradient, G, during the growth of an ingot segment such that v/G is less than a critical v/G and/or is less than a value of v/G that depends on the boron concentration of the ingot. Methods for preparing epitaxial wafers are also disclosed.
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公开(公告)号：US20220145490A1
公开(公告)日：2022-05-12
申请号：US17096516
申请日：2020-11-12
发明人： Maria Porrini , Sergio Morelli , Mauro Diodà
摘要： Methods for preparing an ingot in an ingot puller apparatus are disclosed. Thermal simulations are performed with the length of the ingot puller apparatus side heater being varied in the thermal simulations. A side heater is selected based on the thermal simulations. An ingot puller apparatus having the selected side heater length is provided. A seed crystal is lowered into a melt within a crucible of the ingot puller apparatus and an ingot is withdrawn from the melt.
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公开(公告)号：US20220025541A1
公开(公告)日：2022-01-27
申请号：US17330092
申请日：2021-05-25
发明人： JaeWoo Ryu , Carissima Marie Hudson , JunHwan Ji , WooJin Yoon
摘要： Methods for producing monocrystalline silicon ingots by horizontal magnetic field Czochralski are disclosed. During growth of the neck and/or growth of at least a portion of the crown, a magnetic field is not applied to the neck and/or crown or a relatively weak magnetic field of 1500 gauss or less is applied. A horizontal magnetic field (e.g., greater than 1500 gauss) is applied during growth of the ingot main body.
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