公开(公告)号：US12071709B2

公开(公告)日：2024-08-27

申请号：US18362117

申请日：2023-07-31

申请人： DENSO CORPORATION

发明人： Isaho Kamata ,  Hidekazu Tsuchida ,  Norihiro Hoshino ,  Yuichiro Tokuda ,  Takeshi Okamoto

IPC分类号： C30B25/00 ,  C30B25/02 ,  C30B25/10 ,  C30B29/36 ,  C30B33/00

CPC分类号： C30B29/36 ,  C30B25/00 ,  C30B25/02 ,  C30B25/10 ,  C30B33/00

摘要： A raw material gas is supplied to a space in which a silicon carbide seed crystal is placed. A silicon carbide single crystal is grown on the seed crystal by keeping a monosilane partial pressure at 4 kPa or more and heating the space to a temperature of 2400° C. to 2700° C. The temperature of the space and supply of the raw material gas are controlled such that a temperature gradient of a growth crystal surface of the silicon carbide single crystal in a radial direction is 0.1° C./mm or less, and a radius of curvature of the growth crystal surface is 4.5 m or more, thereby producing a silicon carbide single crystal ingot having a growth length of 3 mm or more and an internal stress of 10 MPa or less. The ingot is then cut into a silicon carbide single crystal wafer.

公开(公告)号：US20240282933A1

公开(公告)日：2024-08-22

申请号：US18607531

申请日：2024-03-17

申请人： OneD Material, Inc.

发明人： Wanqing CAO ,  Virginia ROBBINS ,  Yimin ZHU

IPC分类号： H01M4/36 ,  B01J21/18 ,  B01J23/72 ,  B01J37/02 ,  C01B33/02 ,  C01B33/021 ,  C01B33/029 ,  C30B11/12 ,  C30B25/00 ,  C30B29/06 ,  C30B29/60 ,  H01M4/04 ,  H01M4/134 ,  H01M4/38 ,  H01M4/62

CPC分类号： H01M4/366 ,  B01J21/18 ,  B01J23/72 ,  B01J37/0211 ,  C01B33/02 ,  C01B33/021 ,  C01B33/029 ,  C30B11/12 ,  C30B25/005 ,  C30B29/06 ,  C30B29/60 ,  H01M4/0428 ,  H01M4/0495 ,  H01M4/134 ,  H01M4/36 ,  H01M4/386 ,  H01M4/622 ,  C01P2004/16 ,  C01P2004/64

摘要： Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.

公开(公告)号：US11967707B2

公开(公告)日：2024-04-23

申请号：US18111549

申请日：2023-02-18

申请人： OneD Material, Inc.

发明人： Wanqing Cao ,  Virginia Robbins ,  Yimin Zhu

IPC分类号： H01M4/36 ,  B01J21/18 ,  B01J23/72 ,  B01J37/02 ,  C01B33/02 ,  C01B33/021 ,  C01B33/029 ,  C30B11/12 ,  C30B25/00 ,  C30B29/06 ,  C30B29/60 ,  H01M4/04 ,  H01M4/134 ,  H01M4/38 ,  H01M4/62

CPC分类号： H01M4/366 ,  B01J21/18 ,  B01J23/72 ,  B01J37/0211 ,  C01B33/02 ,  C01B33/021 ,  C01B33/029 ,  C30B11/12 ,  C30B25/005 ,  C30B29/06 ,  C30B29/60 ,  H01M4/0428 ,  H01M4/0495 ,  H01M4/134 ,  H01M4/36 ,  H01M4/386 ,  H01M4/622 ,  C01P2004/16 ,  C01P2004/64

摘要： Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.

公开(公告)号：US11746438B2

公开(公告)日：2023-09-05

申请号：US17547730

申请日：2021-12-10

申请人： Sinoma Synthetic Crystals Co., Ltd. ,  Beijing Sinoma Synthetic Crystals Co., Ltd.

发明人： Xun Qian ,  Cunxin Huang ,  Hongtao Xiao ,  Xu Zhang ,  Kehong Zhang

IPC分类号： C30B25/10 ,  C30B29/46 ,  C30B25/00 ,  C30B35/00

CPC分类号： C30B29/46 ,  C30B25/00 ,  C30B25/10 ,  C30B35/002

摘要： The present invention provides an optical ZnS material and a preparation method thereof, wherein the preparation method comprises: charging zinc and sulfur into a first crucible and a feeding device of a chemical vapor deposition furnace, respectively; heating the first crucible, the second crucible and a deposition chamber, and charging sulfur into the second crucible through the feeding device; introducing an inert carrier gas into the first crucible, and introducing an inert carrier gas and hydrogen into the second crucible, flowing the carrier gas containing zinc vapor and sulfur vapor respectively into the deposition chamber through pipelines to deposit ZnS, and supplying the second crucible with sulfur regularly and quantitatively through the feeding device during the deposition process to maintain a saturated vapor pressure of sulfur in a range of 0.8 to 1.8 KPa. The preparation method of the present invention does not generate H2S; thus it can avoid the formation of hydrogen-zinc complexes by H ions produced from the decomposition of H2S and Zn vapor, which would otherwise affect the transmittance and emissivity of ZnS material.

公开(公告)号：US20230220586A1

公开(公告)日：2023-07-13

申请号：US18098577

申请日：2023-01-18

申请人： Impossible Diamond, Inc.

发明人： Ryan Shearman ,  Dan Wojno ,  Anthony Ippolito

IPC分类号： C30B29/04 ,  C07C7/144 ,  C07C1/12 ,  C01B32/25 ,  C30B25/00 ,  C07C1/02 ,  E04H1/12 ,  G03B15/00 ,  C01B32/50

CPC分类号： C30B29/04 ,  C07C7/144 ,  C07C1/12 ,  C01B32/25 ,  C30B25/00 ,  C07C1/02 ,  C01P2006/80 ,  E04H1/12 ,  G03B15/00 ,  C01B32/50

摘要： One variation of a method includes: ingesting an air sample captured during an air capture period at a target location for collection of a first mixture including carbon dioxide and a first concentration of impurities; conveying the first mixture through a liquefaction unit to generate a second mixture including carbon dioxide and a second concentration of impurities less than the first concentration of impurities; in a methanation reactor, mixing the second mixture with hydrogen to generate a first hydrocarbon mixture comprising a third concentration of impurities comprising nitrogen, carbon dioxide, and hydrogen; conveying the first hydrocarbon mixture through a separation unit configured to remove impurities from the first hydrocarbon mixture to generate a second hydrocarbon a fourth concentration of impurities less than the third concentration of impurities; and depositing the second hydrocarbon mixture in a diamond reactor containing a set of diamond seeds to generate a first set of diamonds.

公开(公告)号：US11616225B2

公开(公告)日：2023-03-28

申请号：US16355454

申请日：2019-03-15

申请人： OneD Material LLC

发明人： Wanqing Cao ,  Virginia Robbins ,  Yimin Zhu

IPC分类号： H01M4/36 ,  C30B29/60 ,  C01B33/029 ,  B01J21/18 ,  B01J23/72 ,  B01J37/02 ,  C01B33/02 ,  C30B11/12 ,  H01M4/134 ,  C01B33/021 ,  C30B25/00 ,  C30B29/06 ,  H01M4/04 ,  H01M4/38 ,  H01M4/62

摘要： Methods for producing nanostructures from copper-based catalysts on porous substrates, particularly silicon nanowires on carbon-based substrates for use as battery active materials, are provided. Related compositions are also described. In addition, novel methods for production of copper-based catalyst particles are provided. Methods for producing nanostructures from catalyst particles that comprise a gold shell and a core that does not include gold are also provided.

公开(公告)号：US20220290325A1

公开(公告)日：2022-09-15

申请号：US17826685

申请日：2022-05-27

申请人： Impossible Diamond, Inc.

发明人： Ryan Shearman ,  Dan Wojno ,  Anthony Ippolito

IPC分类号： C30B29/04 ,  C07C1/12 ,  C07C7/144 ,  C01B32/25 ,  C30B25/00

摘要： One variation of a method includes: ingesting an air sample captured during an air capture period at a target location for collection of a first mixture including carbon dioxide and a first concentration of impurities; conveying the first mixture through a liquefaction unit to generate a second mixture including carbon dioxide and a second concentration of impurities less than the first concentration of impurities; in a methanation reactor, mixing the second mixture with hydrogen to generate a first hydrocarbon mixture comprising a third concentration of impurities comprising nitrogen, carbon dioxide, and hydrogen; conveying the first hydrocarbon mixture through a separation unit configured to remove impurities from the first hydrocarbon mixture to generate a second hydrocarbon a fourth concentration of impurities less than the third concentration of impurities; and depositing the second hydrocarbon mixture in a diamond reactor containing a set of diamond seeds to generate a first set of diamonds.

公开(公告)号：US11111573B2

公开(公告)日：2021-09-07

申请号：US16777371

申请日：2020-01-30

申请人： KYOCERA CORPORATION

发明人： Takashi Hino ,  Tetsuo Inoue ,  Shuichi Saito

IPC分类号： C23C14/08 ,  H01L21/3065 ,  C30B25/10 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14 ,  C30B29/16 ,  C30B29/02 ,  C30B28/00 ,  C30B29/22

摘要： A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤Im/Ic≤0.002.

公开(公告)号：US11078597B2

公开(公告)日：2021-08-03

申请号：US15434034

申请日：2017-02-15

申请人： Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

发明人： Yang Wei ,  Shou-Shan Fan

IPC分类号： C30B25/18 ,  H01L21/02 ,  C30B29/40 ,  H01L51/00 ,  C30B29/38 ,  C30B25/10 ,  C30B25/04 ,  C30B25/00 ,  C30B25/02 ,  C30B19/00

摘要： A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is placed on the epitaxial growth surface. A buffer layer is formed on the epitaxial growth surface. A first epitaxial layer is epitaxially grown on the buffer layer. The substrate and the buffer layer are separated to form a second epitaxial growth surface. A second epitaxial layer is epitaxially grown on the second epitaxial growth surface.

公开(公告)号：US10889914B2

公开(公告)日：2021-01-12

申请号：US16273601

申请日：2019-02-12

申请人： THE TRUSTEES OF THE STEVENS INSTITUTE OF TECHNOLOGY

发明人： Eui-Hyeok Yang ,  Xiaotian Wang ,  Kyungnam Kang ,  Siwei Chen

IPC分类号： C09J7/00 ,  C09J5/00 ,  C23C16/00 ,  C30B25/00 ,  C30B29/00 ,  G03F7/00 ,  H01L21/00 ,  C30B25/04 ,  H01L21/02 ,  H01L21/78 ,  H01L21/683 ,  C23C16/04 ,  C23C16/30 ,  C30B25/18 ,  C30B29/46 ,  C09J5/06 ,  C09J7/35 ,  H01L21/20

摘要： The exemplary embodiments describe techniques for a controlled chemical vapor deposition growth and transfer of arrayed TMD monolayers on predetermined locations, which enable the formation of single crystalline TMD monolayer arrays on specific locations. The unique growth process includes the patterning of transition metal oxide (e.g., MoO3) on the source substrate contacting the growth substrate face-to-face, where the growth of single crystalline TMD monolayers with controlled size and location, exclusively on predetermined locations on the growth substrates is accomplished. These TMD arrays can be align-transferred using a unique process that combines the wet and stamping transfer processes onto any target substrate with a pin-point accuracy, which dramatically enhances the integrity of transferred TMDs.