公开(公告)号：US20240309548A1

公开(公告)日：2024-09-19

申请号：US18122537

申请日：2023-03-16

申请人： Applied Materials, Inc.

发明人： Awse MA'AYA ,  Ala MORADIAN

IPC分类号： C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  F03G7/00

CPC分类号： C30B25/08 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  F03G7/0252

摘要： A processing system including a chamber that includes one or more sidewalls defining an internal volume, one or more heat sources configured to generate heat, a liner disposed in the internal volume and lining one or more sidewalls, and one or more cooling channels. The processing system includes a fluid system in fluid communication with the cooling channels, the fluid system including one or more supply lines configured to supply a fluid to the cooling channels at a first temperature, and one or more return lines configured to flow the fluid from the cooling channels at a second temperature that is higher than the first temperature, and a fluid motor configured to move the fluid. The processing system includes an energy harnessing device configured to harness energy to produce electrical energy, the energy harnessing device including one or more turbines.

公开(公告)号：US12060651B2

公开(公告)日：2024-08-13

申请号：US17317363

申请日：2021-05-11

申请人： Applied Materials, Inc.

发明人： Tetsuya Ishikawa ,  Swaminathan T. Srinivasan ,  Kartik Bhupendra Shah ,  Ala Moradian ,  Manjunath Subbanna ,  Matthias Bauer ,  Peter Reimer ,  Michael R. Rice

IPC分类号： C30B25/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67 ,  H01L21/677

CPC分类号： C30B25/14 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45504 ,  C23C16/4558 ,  C23C16/46 ,  C30B25/08 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67115 ,  H01L21/67742 ,  C23C16/4411 ,  C23C16/4584 ,  C23C16/482 ,  H01L21/67748

摘要： The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a substrate support, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. Each of the upper lamp assembly and the lower lamp assembly include vertically oriented lamp apertures for the placement of heating lamps therein. The inject ring includes gas injectors disposed therethrough and the base ring includes a substrate transfer passage, a lower chamber exhaust passage, and one or more upper chamber exhaust passages. The gas injectors are disposed over the substrate transfer passage and across from the lower chamber exhaust passage and the one or more upper chamber exhaust passages.

公开(公告)号：US20240150932A1

公开(公告)日：2024-05-09

申请号：US18548938

申请日：2022-02-25

申请人： SILTRONIC AG

发明人： Hannes Hecht ,  Michael Lauer ,  Korbinian Lichtenegger ,  Walter Edmaier

IPC分类号： C30B25/08 ,  C23C16/44 ,  C30B25/16 ,  H01L21/02

CPC分类号： C30B25/08 ,  C23C16/4408 ,  C30B25/165 ,  H01L21/0262 ,  C30B25/20 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0254

摘要： A method produces semiconductor wafers in a chamber of a deposition reactor of a plant. The method includes: repeatedly depositing an epitaxial layer on a substrate wafer in the chamber, producing semiconductor wafers, and at the same time: conditioning a replacement chamber outside the plant by purging the replacement chamber with a purge gas; interrupting the deposition of the epitaxial layer; replacing the chamber with the replacement chamber, after the conditioning, the replacement chamber being sealed and transported in a closed state to the plant or after the conditioning, the replacement chamber is transported to the plant and in this process purge gas is passed through the replacement chamber; and continuing the deposition of the epitaxial layer in the replacement chamber, producing a second number of semiconductor wafers.

公开(公告)号：US20240011189A1

公开(公告)日：2024-01-11

申请号：US18372803

申请日：2023-09-26

申请人： ASM IP Holding B.V.

发明人： John Tolle ,  Joseph P. Margetis

IPC分类号： C30B25/14 ,  C30B25/16 ,  C30B25/18 ,  C30B25/08 ,  H01L21/67

CPC分类号： C30B25/14 ,  C30B25/16 ,  C30B25/18 ,  C30B25/08 ,  H01L21/67011

摘要： Gas-phase reactor systems and methods suitable for use with precursors that are solid phase at room temperature and pressure are disclosed. The systems and methods as described herein can be used to, for example, form amorphous, polycrystalline, or epitaxial layers (e.g., one or more doped semiconductor layers) on a surface of a substrate.

公开(公告)号：US11859279B2

公开(公告)日：2024-01-02

申请号：US16467828

申请日：2017-12-08

申请人： DIAM CONCEPT

发明人： Alix Gicquel ,  François Des Portes

IPC分类号： C23C16/511 ,  C23C16/27 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/20 ,  C30B29/04 ,  H01J37/32

CPC分类号： C23C16/274 ,  C23C16/4586 ,  C23C16/45563 ,  C23C16/466 ,  C23C16/511 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/20 ,  C30B29/04 ,  H01J37/3244 ,  H01J37/32201 ,  H01J37/32247 ,  H01J37/32458 ,  H01J37/32513 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32834 ,  H01J2237/20214 ,  H01J2237/20235 ,  H01J2237/332

摘要： The invention relates to a microwave plasma-assisted deposition modular reactor for manufacturing synthetic diamond. The reactor has at least three modulation elements selected from: a crown adapted to be positioned between a first enclosure part and a second enclosure part; a substrate holder module mobile in vertical translation and in rotation, in contact with a quarter-wave and including at least one fluid cooling system; a tray mobile in vertical translation in order to change the shape and volume of the resonant cavity and including through openings allowing the gases to pass; a gas distribution module, including a removable gas distribution plate comprising an inner surface, an outer surface, and a plurality of gas distribution nozzles forming channels between said surfaces capable of conducting a gas flow, and a support device connected to a cooling system and adapted to accommodate the removable gas distribution plate; and a substrate cooling control module including a removable thermal resistance gas injection device.

公开(公告)号：US20230203713A1

公开(公告)日：2023-06-29

申请号：US17927810

申请日：2021-04-27

申请人： Ebner Industrieofenbau GmbH

发明人： Robert EBNER ,  Kanaparin ARIYAWONG ,  Chih-Yung HSIUNG ,  Ghassan BARBAR

IPC分类号： C30B35/00 ,  F27B14/14 ,  C30B23/06 ,  C30B25/10 ,  C30B25/08

CPC分类号： C30B35/002 ,  F27B14/14 ,  C30B23/066 ,  C30B25/10 ,  C30B25/08

摘要： A crucible device includes a heating chamber, at least a first crucible in which a first crystal is growable, and at least a second crucible in which a second crystal is growable. The first crucible and the second crucible are arranged within the heating chamber spaced apart from each other along a horizontal and vertical and any orientational direction. The crucible device further comprises a heating system arranged within the heating chamber, wherein the heating system is configured for adjusting a temperature along the horizontal and vertical and any orientational directions.

公开(公告)号：US20230163019A1

公开(公告)日：2023-05-25

申请号：US18100660

申请日：2023-01-24

申请人： ASM IP Holding B.V.

发明人： Eric Hill ,  John DiSanto

IPC分类号： H01L21/687 ,  H01L21/67 ,  C23C16/458 ,  C30B25/08 ,  C30B25/12

CPC分类号： H01L21/68742 ,  H01L21/67069 ,  H01L21/67028 ,  C23C16/4586 ,  C23C16/4584 ,  C30B25/08 ,  H01L21/67248 ,  C30B25/12 ,  H01L21/68792 ,  C23C16/4581 ,  H01L21/68757 ,  H01L21/67126

摘要： A substrate support assembly suitable for use in a reactor including a common processing and substrate transfer region is disclosed. The substrate support assembly includes a susceptor and one or more lift pins that can be used to lower a substrate onto a surface of the susceptor and raise the substrate from the surface, to allow transfer of the substrate from the processing region, without raising or lowering the susceptor.

公开(公告)号：US11649559B2

公开(公告)日：2023-05-16

申请号：US16266646

申请日：2019-02-04

申请人： Applied Materials, Inc.

发明人： Xinyu Bao ,  Chun Yan ,  Hua Chung ,  Schubert S. Chu

IPC分类号： C30B25/16 ,  C30B25/08 ,  C30B25/00 ,  C30B33/00 ,  C23C16/44 ,  C23C16/30 ,  C23C16/48 ,  C23C16/56 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B29/40 ,  H01L21/67 ,  C30B35/00 ,  H01L21/225 ,  H01L21/30 ,  C30B29/06

CPC分类号： C30B25/08 ,  C23C16/301 ,  C23C16/4405 ,  C23C16/481 ,  C23C16/56 ,  C30B25/00 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B25/165 ,  C30B29/40 ,  C30B33/00 ,  C30B35/00 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67253 ,  C30B29/06 ,  H01L21/2252 ,  H01L21/30 ,  H01L21/67201

摘要： Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

公开(公告)号：US11608267B2

公开(公告)日：2023-03-21

申请号：US17328227

申请日：2021-05-24

申请人： Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

发明人： Hao Li ,  Yang Wu ,  Shou-Shan Fan

IPC分类号： C30B25/08 ,  C01B19/00 ,  C30B29/46

摘要： A method for making a transition metal dichalcogenide crystal having a chemical formula represented as MX2 is provided, wherein M represents a central transition metal element, and X represents a chalcogen element. The method includes providing a MX2 polycrystalline powder, a MX2 seed crystal, and a transport medium. The MX2 polycrystalline powder and the transport medium are placed in a first reaction chamber. The first reaction chamber and the MX2 seed crystal are placed in a second reaction chamber having a source end and a deposition end opposite to the source end. The first reaction chamber is placed at the source end, and the MX2 seed crystal is placed at the deposition end.

公开(公告)号：US11587821B2

公开(公告)日：2023-02-21

申请号：US16944271

申请日：2020-07-31

申请人： ASM IP Holding B.V.

发明人： Eric Hill ,  John DiSanto

IPC分类号： H01L21/67 ,  C30B25/08 ,  H01L21/687 ,  C23C16/458 ,  C30B25/12

摘要： A substrate support assembly suitable for use in a reactor including a common processing and substrate transfer region is disclosed. The substrate support assembly includes a susceptor and one or more lift pins that can be used to lower a substrate onto a surface of the susceptor and raise the substrate from the surface, to allow transfer of the substrate from the processing region, without raising or lowering the susceptor.