公开(公告)号：US20250051962A1

公开(公告)日：2025-02-13

申请号：US18698011

申请日：2022-09-26

Applicant: KWANSEI GAKUIN EDUCATIONAL FOUNDATION ,  TOYOTA TSUSHO CORPORATION

Inventor： Tadaaki KANEKO ,  Daichi DOJIMA ,  Kohei TODA ,  Jun SASAKI ,  Kiyoshi KOJIMA

IPC: C30B29/36 ,  C23C16/32 ,  C30B25/20 ,  H01L21/02 ,  H01L29/16

Abstract: An object of the present invention is to provide a novel technique for reducing stacking faults SF in silicon carbide. Another object of the present invention is to provide a novel technique capable of reducing the stacking faults SF under a small number of growth conditions.
The present invention is a method for reducing stacking faults in silicon carbide including a growth step S10 of growing an epitaxial layer 20 on a bulk layer 10 of silicon carbide having stacking faults SF under a SiC—C equilibrium vapor pressure environment.

公开(公告)号：US12198983B2

公开(公告)日：2025-01-14

申请号：US17756615

申请日：2020-10-26

Applicant: Soitec

Inventor： Ionut Radu ,  Hugo Biard ,  Christophe Maleville ,  Eric Guiot ,  Didier Landru

IPC: H01L21/78 ,  C23C16/32 ,  C30B25/20 ,  C30B29/36 ,  C30B31/22 ,  C30B33/10 ,  H01L21/02

Abstract: A method of producing a composite structure comprising a thin layer of monocrystalline silicon carbide arranged on a carrier substrate of silicon carbide comprises: a) a step of provision of an initial substrate of monocrystalline silicon carbide, b) a step of epitaxial growth of a donor layer of monocrystalline silicon carbide on the initial substrate, to form a donor substrate, c) a step of ion implantation of light species into the donor layer, to form a buried brittle plane delimiting the thin layer, d) a step of formation of a carrier substrate of silicon carbide on the free surface of the donor layer, comprising a deposition at a temperature of between 400° C. and 1100° C., e) a step of separation along the buried brittle plane, to form the composite structure and the remainder of the donor substrate, and f) a step of chemical-mechanical treatment(s) of the composite structure.

公开(公告)号：US20240318349A1

公开(公告)日：2024-09-26

申请号：US18229051

申请日：2023-08-01

Applicant: M7D Corporation

Inventor： John P. Ciraldo ,  Joshua Blackketter ,  Jonathan Levine-Miles

IPC: C30B25/04 ,  C30B25/20 ,  C30B29/04 ,  C30B33/08

CPC classification number: C30B25/04 ,  C30B25/20 ,  C30B29/04 ,  C30B33/08

Abstract: A method provides a single-crystal diamond substrate having a growth surface. A diamond growth inhibitor (DGI) is positioned over a diamond inhibition area of the growth surface. A first diamond portion having a first dopant concentration is deposited using chemical vapor deposition over a growth area of the growth surface. The diamond growth inhibitor and non-diamond carbon thereon are removed.

公开(公告)号：US12098475B2

公开(公告)日：2024-09-24

申请号：US17055943

申请日：2019-05-16

Applicant: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY ,  Fraunhofer USA

Inventor： Timothy A. Grotjohn ,  Ramon Diaz ,  Aaron Hardy

IPC: C30B25/20 ,  C30B25/02 ,  C30B25/04 ,  C30B25/08 ,  C30B25/12 ,  C30B25/16 ,  C30B29/04 ,  C30B29/68

CPC classification number: C30B25/025 ,  C30B25/04 ,  C30B25/08 ,  C30B25/12 ,  C30B25/16 ,  C30B25/20 ,  C30B29/04 ,  C30B29/68

Abstract: The disclosure relates to large area single crystal diamond (SCD) surfaces and substrates, and their methods of formation. Typical large area substrates can be at least about 25 mm, 50 mm, or 100 mm in diameter or square edge length, and suitable thicknesses can be about 100 μm to 1000 μm. The large area substrates have a high degree of crystallographic alignment. The large area substrates can be used in a variety of electronics and/or optics applications. Methods of forming the large area substrates generally include lateral and vertical growth of SCD on spaced apart and crystallographically aligned SCD seed substrates, with the individual SCD growth layers eventually merging to form a composite SCD layer of high quality and high crystallographic alignment. A diamond substrate holder can be used to crystallographically align the SCD seed substrates and reduce the effect of thermal stress on the formed SCD layers.

公开(公告)号：US12091774B2

公开(公告)日：2024-09-17

申请号：US17426334

申请日：2020-01-23

Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Takehiro Yoshida

IPC: C30B29/40 ,  C30B25/20 ,  C30B33/00 ,  H01L29/04 ,  H01L29/20 ,  H01L29/34

CPC classification number: C30B29/403 ,  C30B25/20 ,  C30B33/00 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/34

Abstract: A nitride semiconductor substrate that is constituted by a single crystal of a group III nitride semiconductor and includes a main surface for which the closest low index crystal plane is a (0001) plane includes an inclined interface growth region that has grown with inclined interfaces other than the (0001) plane serving as growth surfaces. A ratio of an area occupied by the inclined interface growth region in the main surface is 80% or more. When a dislocation density is determined based on a dark spot density by observing the main surface in a field of view that is 250 μm square using a multiphoton excitation microscope, the main surface does not include a region that has a dislocation density higher than 3×106 cm−2, and the main surface includes dislocation-free regions that are 50 μm square and do not overlap each other, at a density of 100 regions/cm2 or more.

公开(公告)号：US20240301585A1

公开(公告)日：2024-09-12

申请号：US18273774

申请日：2022-01-28

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Takaya MIYASE

IPC: C30B25/20 ,  C30B23/00 ,  C30B25/18 ,  C30B29/36

CPC classification number: C30B25/20 ,  C30B29/36 ,  C30B23/00 ,  C30B25/186

Abstract: The first area density is 0.03/cm2 or more, and a value obtained by dividing the second area density by a sum of the first area density and the second area density is 10% or less. As viewed in a direction perpendicular to the main surface, the first recess extends in a straight line along a direction inclined with respect to each of the first direction and a second direction perpendicular to the first direction, and a first-direction-side end portion of the first recess is contiguous to a 4H polytype region, and as viewed in the direction perpendicular to the main surface, the second recess extends in a straight line along a direction inclined with respect to each of the first direction and the second direction, and a first-direction-side end portion of the second recess is contiguous to a 3C polytype region.

公开(公告)号：US12060653B2

公开(公告)日：2024-08-13

申请号：US17560427

申请日：2021-12-23

Applicant: MITSUBISHI CHEMICAL CORPORATION

Inventor： Yutaka Mikawa ,  Tetsuo Okano

IPC: B32B3/00 ,  C30B7/10 ,  C30B25/20 ,  C30B29/40

CPC classification number: C30B29/406 ,  C30B7/105 ,  C30B25/20

Abstract: Provided is a bulk GaN crystal in which the degree of curvature of the c-plane is reduced. The bulk GaN crystal includes a main surface selected from a surface inclined at 0° to 10° from the (0001) crystal plane and a surface inclined at 0° to 10° from the (000-1) crystal plane, and the main surface is a specific main surface A that satisfies the following conditions (i) and (ii): (i) a first line, which is a 80 mm-long virtual line segment extending in a first direction on the specific main surface A, can be drawn, and a difference between a maximum value and a minimum value of peak angles in (002) XRD rocking curves of the GaN crystal, which is measured between 17 measurement points arranged at a 5-mm pitch on the first line with the omega axis being perpendicular to the first direction, is 0.05° or less; and (ii) a second line, which is a 80 mm-long virtual line segment extending in a second direction perpendicular to the first direction on the specific main surface A, can be drawn, and a difference between a maximum value and a minimum value of peak angles in (002) XRD rocking curves of the GaN crystal, which is measured between 17 measurement points arranged at a 5-mm pitch on the second line with the omega axis being perpendicular to the second direction, is 0.05° or less.

公开(公告)号：US12037702B2

公开(公告)日：2024-07-16

申请号：US18488602

申请日：2023-10-17

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： Andrew Mark Edmonds ,  Matthew Lee Markham ,  Pierre-Olivier Francois Marc Colard

IPC: C30B25/20 ,  C23C16/00 ,  C23C16/02 ,  C23C16/27 ,  C23C16/56 ,  C30B25/16 ,  C30B25/18 ,  C30B29/04 ,  C30B29/68 ,  C30B33/00

CPC classification number: C30B25/20 ,  C23C16/006 ,  C23C16/02 ,  C23C16/27 ,  C23C16/56 ,  C30B25/16 ,  C30B25/186 ,  C30B25/205 ,  C30B29/04 ,  C30B29/68 ,  C30B33/00

Abstract: Single crystal CVD diamond material comprising a total nitrogen concentration of at least 5 ppm and a neutral single substitutional nitrogen, Ns0, to total single substitutional nitrogen, Ns, ratio of at least 0.7. Such a diamond is observed to have a relatively low amount of brown colouration despite the relatively high concentration of nitrogen. A method of making the single crystal diamond is also disclosed, the method including growing the CVD diamond in process gases comprising 60 to 200 ppm nitrogen, in addition to a carbon-containing gas, and hydrogen, wherein the ratio of carbon atoms in the carbon-containing gas to hydrogen atoms in the hydrogen gas is 0.5 to 1.5%.

公开(公告)号：US20240203730A1

公开(公告)日：2024-06-20

申请号：US18544019

申请日：2023-12-18

Applicant: ASM IP Holding B.V.

Inventor： Rami Khazaka ,  Patricio Romero ,  Michael Eugene Givens ,  Charles Dezelah

IPC: H01L21/02 ,  C30B25/16 ,  C30B25/20 ,  C30B29/52 ,  C30B31/08 ,  C30B33/12

CPC classification number: H01L21/02532 ,  C30B25/16 ,  C30B25/20 ,  C30B29/52 ,  C30B31/08 ,  C30B33/12 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/02636

Abstract: A method of forming a Si-comprising epitaxial layer selectively on a substrate and a semiconductor processing apparatus is disclosed. Embodiments of the presently described method of forming the Si-comprising epitaxial layer comprise performing a deposition process for forming the Si-comprising epitaxial layer selectively on a first exposed single crystalline surface relative to a second exposed single crystalline surface being different than the first exposed single crystalline surface.

公开(公告)号：US11952678B2

公开(公告)日：2024-04-09

申请号：US17606738

申请日：2020-04-24

Applicant: KWANSEI GAKUIN EDUCATIONAL FOUNDATION ,  TOYOTA TSUSHO CORPORATION

Inventor： Tadaaki Kaneko

IPC: C30B23/06 ,  C30B25/10 ,  C30B25/20 ,  C30B29/36

CPC classification number: C30B25/20 ,  C30B25/10 ,  C30B29/36

Abstract: The present invention addresses the problem of providing a novel method for manufacturing a SiC substrate, and a manufacturing device for said method. The present invention realizes: a method for manufacturing a SiC substrate, comprising heating two mutually opposing SiC single-crystal substrates and transporting a raw material from one SiC single-crystal substrate to the other SiC single-crystal substrate; and a manufacturing device for said method. Through the present invention, each of the mutually opposing SiC single-crystal substrate surfaces can be used as a raw material for crystal growth of the other SiC single-crystal substrate surface, and it is therefore possible to realize a highly economical method for manufacturing a SiC substrate.