公开(公告)号：US12110610B2

公开(公告)日：2024-10-08

申请号：US18071117

申请日：2022-11-29

申请人： General Graphene Corp.

发明人： James Vig Sherrill ,  Gregory E. Erickson

IPC分类号： C30B25/14 ,  C30B25/10 ,  C30B25/12 ,  C30B29/02

CPC分类号： C30B25/12 ,  C30B25/10 ,  C30B25/14 ,  C30B29/02

摘要： A method of making 2D material such as graphene includes introducing a purge gas into a gas confining space within a reaction chamber to purge the gas confining space of oxygen; introducing a donor gas into the gas confining space within the reaction chamber; moving a forming layer within the gas confining space within the reaction chamber when the donor gas is within the gas confining space; and heating the forming layer within the gas confining space to a temperature sufficient to form 2D material while the gas confining space is open to a surrounding atmosphere.

公开(公告)号：US20240332362A1

公开(公告)日：2024-10-03

申请号：US18742357

申请日：2024-06-13

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Hitoshi NOGUCHI

IPC分类号： H01L29/16 ,  B82Y30/00 ,  C30B23/02 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  C30B29/16 ,  C30B29/68 ,  H01L21/02 ,  H01L29/04

CPC分类号： H01L29/1602 ,  C30B23/025 ,  C30B25/18 ,  C30B29/04 ,  C30B29/68 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/02609 ,  H01L29/045 ,  B82Y30/00 ,  C30B29/02 ,  C30B29/16

摘要： A method for manufacturing a laminate substrate which includes a single crystal diamond (111) layer, includes heteroepitaxially growing an intermediate layer on an underlying substrate whose main surface has an off angle within a range, −8.0° or more and −0.5° or less, or +0.5° or more and +8.0° or less in a crystal axis [_1_1 2] direction or a threefold symmetry direction thereof relative to a crystal plane orientation of (111); forming diamond nuclei on a surface of the intermediate layer; and heteroepitaxially growing, on the intermediate layer surface on which the nuclei are formed, a single crystal diamond (111) layer which has an off angle within a range, more than −10.5° and less than −2.0°, or more than +2.0° and less than +10.5° in a crystal axis [_1_1 2] direction or a threefold symmetry direction thereof relative to a crystal plane orientation of (111).

公开(公告)号：US20240309549A1

公开(公告)日：2024-09-19

申请号：US18122311

申请日：2023-03-16

申请人： Ivan TIMOKHIN

发明人： Ivan TIMOKHIN

IPC分类号： C30B25/10 ,  C30B23/06 ,  C30B25/08 ,  C30B29/02 ,  C30B29/52

CPC分类号： C30B25/10 ,  C30B23/06 ,  C30B25/08 ,  C30B29/02 ,  C30B29/52

摘要： Forming a crystalline layer of a desired form, shape, and average thickness, by selecting a desired form, shape, and average thickness for a crystalline layer to be formed, forming an ampoule having a first internal surface of said desired form and shape, providing a primary substance within the ampoule, sealing the ampoule, generating a heat gradient along the ampoule of at least 5 degrees Celsius, with the highest temperature at the first internal surface, and maintaining the heat gradient until a crystalline layer of the desired average thickness forms on the first internal surface.

公开(公告)号：US20240183064A1

公开(公告)日：2024-06-06

申请号：US18286023

申请日：2022-03-14

申请人： PEKING UNIVERSITY

发明人： Kaihui LIU ,  Can LIU ,  Enge WANG ,  Dapeng YU

IPC分类号： C30B25/18 ,  C30B25/16 ,  C30B25/22 ,  C30B29/02 ,  C30B29/40 ,  C30B29/68 ,  C30B33/06 ,  C30B33/10

CPC分类号： C30B25/18 ,  C30B25/165 ,  C30B25/22 ,  C30B29/02 ,  C30B29/403 ,  C30B29/68 ,  C30B33/06 ,  C30B33/10

摘要： A method for preparing a large-scale two-dimensional single crystal material stack which has an interlayer rotation angle. Single crystal substrates are stacked and rotated at a specific angle, a two-dimensional single crystal material is epitaxial on the surface thereof, and then an upper layer and a lower layer of the two-dimensional single crystal material are attached, and a layer of the single crystal substrates on the surface is removed so as to obtain a two-dimensional single crystal stack which has a specific rotation angle. A large-scale two-dimensional single crystal material stack which has an interlayer rotation angle prepared by the described method.

公开(公告)号：US11885039B2

公开(公告)日：2024-01-30

申请号：US17662099

申请日：2022-05-05

申请人： THE HONG KONG POLYTECHNIC UNIVERSITY

发明人： Jianhua Hao ,  Zehan Wu

IPC分类号： C30B23/06 ,  H01L21/02 ,  C30B29/02 ,  H01L21/78 ,  C30B23/02

CPC分类号： C30B23/066 ,  C30B23/025 ,  C30B29/02 ,  H01L21/0242 ,  H01L21/02521 ,  H01L21/02631 ,  H01L21/7806

摘要： Methods for preparing a monolayer or few-layer centimeter-scale crystalline black phosphorus film, products thereof, and electronic and optoelectronic devices including the same.

公开(公告)号：US20240027661A1

公开(公告)日：2024-01-25

申请号：US18034303

申请日：2021-10-15

申请人： PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION

发明人： Se Young JEONG ,  Su Jae KIM ,  You Sil LEE

IPC分类号： G02B5/08 ,  G02B1/02 ,  C30B29/02 ,  C30B29/68 ,  C30B29/20 ,  C30B23/08

CPC分类号： G02B5/0808 ,  G02B1/02 ,  C30B29/02 ,  C30B29/68 ,  C30B29/20 ,  C30B23/08

摘要： There are provided a large-area single-crystal silver thin-film structure using a single-crystal copper thin-film buffer layer, and a method for manufacturing same. The large-area single-crystal silver thin-film structure includes a transparent substrate; a single-crystal copper thin-film buffer layer formed by deposition on the transparent substrate; and a single-crystal silver thin-film layer deposited on the single-crystal copper thin-film buffer layer and having a certain directionality.

公开(公告)号：US20240011184A1

公开(公告)日：2024-01-11

申请号：US18042007

申请日：2021-08-17

申请人： NATIONAL UNIVERSITY OF SINGAPORE

发明人： Andrivo RUSYDI ,  Eng Soon TOK ,  Bin Leong Edwin ONG

IPC分类号： C30B23/00 ,  C30B23/06 ,  C30B29/02

CPC分类号： C30B23/002 ,  C30B23/063 ,  C30B23/066 ,  C30B29/02

摘要： A method of fabricating low dimensional nanostructures on a growth substrate, a single-crystalline low dimensional nanostructure, and a device comprising one or more single-crystalline low dimensional nanostructures. The method comprises fabricating low dimensional nanostructures on a growth substrate using physical vapor deposition, PVD, in a vacuum chamber wherein the low dimensional nanostructures are formed as a strain relief mechanism promoted by a similarity of crystal structure 2-dimensional symmetry between the growth substrate and the low dimensional nanostructures to be grown and a lattice mismatch between the growth substrate and the low dimensional nanostructures to be grown.

公开(公告)号：US20230340693A1

公开(公告)日：2023-10-26

申请号：US17769404

申请日：2020-10-20

申请人： IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

发明人： Ho Bum PARK ,  Ji Soo ROH ,  Jun Kyu JANG

IPC分类号： C30B29/02 ,  C01B32/186 ,  H01B1/02 ,  C30B1/02 ,  C30B25/18 ,  C22F1/02 ,  C22F1/08

CPC分类号： C30B29/02 ,  C01B32/186 ,  H01B1/02 ,  C30B1/02 ,  C30B25/18 ,  C22F1/02 ,  C22F1/08

摘要： The present disclosure manufactures a single-crystal metal film oriented only in the (111) crystal plane by bringing seed crystals comprising (111) oriented seeds or (111) single-crystalline seed crystals into contact with a polycrystalline metal precursor and performing heat treatment, thereby manufacturing a single-crystal metal film oriented only in the (111) crystal plane with a high single crystallization rate irrespective of the thickness and shape of the polycrystalline metal precursor. Additionally, the present disclosure obtains a large-area single-crystal metal film with adjusted orientation angle by introducing single-crystal seed crystals into a polycrystalline metal film at a predetermined angle of rotation and performing heat treatment, and manufactures large-area single-layer graphene with adjusted orientation angle using the same, and multilayer graphene with adjusted orientation angle between graphene by stacking the single-layer graphene.

公开(公告)号：US20230323556A1

公开(公告)日：2023-10-12

申请号：US18334552

申请日：2023-06-14

申请人： CONTEMPORARY AMPEREX TECHNOLOGY CO., LIMITED

发明人： Yukun WU ,  Xiaoming GE

IPC分类号： C25D5/20 ,  C30B29/02 ,  H01M4/66 ,  C30B30/06 ,  C30B7/12 ,  C25D1/04 ,  H01M4/04 ,  C25D3/38

CPC分类号： C25D5/20 ,  C30B29/02 ,  H01M4/661 ,  C30B30/06 ,  C30B7/12 ,  C25D1/04 ,  H01M4/0452 ,  C25D3/38

摘要： A method for preparing an electrolytic copper foil includes placing an anode and a cathode to be plated in a twin crystal growth agent containing electroplating solution in an electroplating tank, and, under conditions that the electroplating solution is provided with randomly alternating transitions of one or two of an ultrasonic wave at a frequency f11 and an ultrasonic wave at a frequency f12 and one or two of an ultrasonic wave at a frequency f21 and an ultrasonic wave at a frequency f22, performing direct current electroplating to obtain the electrolytic copper foil, wherein f11>40 kHz, 15 kHz

公开(公告)号：US11753741B2

公开(公告)日：2023-09-12

申请号：US17199645

申请日：2021-03-12

申请人： GlobalWafers Co., Ltd.

发明人： Zheng Lu ,  Gaurab Samanta ,  Tse-Wei Lu ,  Feng-Chien Tsai

IPC分类号： C30B29/02 ,  C30B33/02 ,  C30B29/06 ,  H01L21/02 ,  H01L21/00 ,  C30B15/20

CPC分类号： C30B33/02 ,  C30B15/203 ,  C30B15/206 ,  C30B29/06 ,  H01L21/00 ,  H01L21/0262 ,  H01L21/02381 ,  H01L21/02532

摘要： Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly distributed radially and exhibit the lack of a significant edge effect. Methods for producing such CZ silicon crystal ingots are also provided by controlling the pull rate from molten silicon, the temperature gradient and the nitrogen concentration. Methods for simulating the radial bulk micro defect size distribution, radial bulk micro defect density distribution and oxygen precipitation density distribution of post epitaxial thermally treated wafers sliced from nitrogen-doped CZ silicon crystals are also provided.