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公开(公告)号：US11559375B2
公开(公告)日：2023-01-24
申请号：US16931253
申请日：2020-07-16
摘要： A dental implant has an implant body made of diamond material, the implant body being provided with a bore hole that has at least one lateral dimension and a depth dimension, the lateral dimension and the depth dimension being mm sized. The bore hole is substantially formed by laser light being directed at the implant body to form said bore hole by softening said diamond material at an intended location of said bore hole. The bore hole is further defined by utilizing at least one metallic drilling tool to remove more of the diamond material after initial formation of the bore hole by said laser light. Preferably, the drilling tool has a cone shaped drilling head or a rectangular drilling head.
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公开(公告)号：US20230002933A1
公开(公告)日：2023-01-05
申请号：US17856207
申请日：2022-07-01
申请人： Shin-Etsu Polymer Co., Ltd. , Shin-Etsu Chemical Co., Ltd. , National University Corporation Saitama University
发明人： Junichi IKENO , Yohei YAMADA , Hideki SUZUKI , Rika MATSUO , Hitoshi NOGUCHI
摘要： A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unit 190 configured to condense laser light B so as to face an upper surface 10a of a block 10 of single crystal diamond, a step of forming a modified layer 20, which includes a processing mark 21 of graphite and a crack 22b extending along a surface (111) around the processing mark 21, in a partial region of the upper surface 10a of the block 10 along the surface (111) of the single crystal diamond, along the surface (111) of the single crystal diamond at a predetermined depth from the upper surface 10a of the block 10 by radiating the laser light B on the upper surface 10a of the block 10 from the laser condensing unit 190 under predetermined conditions and condensing the laser light B inside the block 10, and moving the laser condensing unit 190 and the block 10 in a relative manner two-dimensionally, and a step of forming a cleavage plane 25 at the predetermined depth of the remaining region of the upper surface 10a of the block 10 by spontaneously propagating cleavage from the modified layer 20.
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公开(公告)号：US20220411963A1
公开(公告)日：2022-12-29
申请号：US17778835
申请日：2020-08-14
发明人： Yoshiki NISHIBAYASHI , Minori TERAMOTO , Yutaka KOBAYASHI , Hitoshi SUMIYA , Issei SATOH , Ryo TOYOSHIMA
摘要： Provided is a synthetic single-crystal diamond containing nitrogen. In an X-ray absorption fine structure thereof, a ratio I405/I412 between an intensity I405 of a peak which appears at an energy of 405±1 eV and has a full width at ¾ maximum of 3 eV or more and an intensity I412 of a peak which appears at an energy of 412±2 eV is less than 1.5
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4.发明授权公开(公告)号：US11519097B1
公开(公告)日：2022-12-06
申请号：US17849761
申请日：2022-06-27
申请人： WUHAN UNIVERSITY
发明人： Sheng Liu , Wei Shen , Gai Wu , Yuzheng Guo , Kang Liang , Qijun Wang , Shizhao Wang
摘要： The present disclosure relates to a method for growing and doping a strained diamond based on a chemical vapor deposition (CVD) method. The method comprises: depositing a gradient buffer layer and a relaxation layer on a substrate layer in sequence by the CVD method; and finally, depositing a CVD strained diamond layer on the relaxation layer and performing doping by the CVD method. According to the method, a lattice constant of the relaxation layer prepared by utilizing the CVD method is greater than a lattice constant of the diamond, so that a diamond generates a stretching strain. In growing and doping processes, the CVD strained diamond is in a stretching strain state. Therefore, a formation energy of a doped element is low, and it is easy to dope the diamond, so that a doping concentration of the diamond is high.
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公开(公告)号：US11486037B2
公开(公告)日：2022-11-01
申请号：US16345946
申请日：2017-11-08
摘要： A method of fabricating a plurality of single crystal CVD diamonds. The method includes mounting a plurality of single crystal diamond substrates on a first carrier substrate. The plurality of single crystal diamond substrates is subjected to a first CVD diamond growth process to form a plurality of single crystal CVD diamonds on the plurality of single crystal diamond substrates. The plurality of single crystal CVD diamonds are mounted in a recessed carrier substrate and subjected to a second CVD diamond growth process.
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公开(公告)号：US20220290325A1
公开(公告)日：2022-09-15
申请号：US17826685
申请日：2022-05-27
发明人： Ryan Shearman , Dan Wojno , Anthony Ippolito
摘要： One variation of a method includes: ingesting an air sample captured during an air capture period at a target location for collection of a first mixture including carbon dioxide and a first concentration of impurities; conveying the first mixture through a liquefaction unit to generate a second mixture including carbon dioxide and a second concentration of impurities less than the first concentration of impurities; in a methanation reactor, mixing the second mixture with hydrogen to generate a first hydrocarbon mixture comprising a third concentration of impurities comprising nitrogen, carbon dioxide, and hydrogen; conveying the first hydrocarbon mixture through a separation unit configured to remove impurities from the first hydrocarbon mixture to generate a second hydrocarbon a fourth concentration of impurities less than the third concentration of impurities; and depositing the second hydrocarbon mixture in a diamond reactor containing a set of diamond seeds to generate a first set of diamonds.
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公开(公告)号：US20220154368A1
公开(公告)日：2022-05-19
申请号：US17593201
申请日：2020-03-30
IPC分类号： C30B29/68 , C30B29/04 , C30B25/20 , C30B25/18 , C23C16/00 , C23C16/27 , C23C16/02 , C23C16/56 , C30B33/00
摘要： A method of forming a diamond composite body and the diamond composite body. A first single crystal diamond body is provided, which contains nitrogen and has a uniform strain such that over an area of at least 1×1 mm, at least 90 percent of points display a modulus of strain-induced shift of NV resonance of less than 200 kHz, wherein each point in the area is a resolved region of 50 μm2. The first single crystal diamond body is treated to convert at least some of the nitrogen to form at least 0.3 ppm nitrogen-vacancy, NV−, centres. A CVD process is used to grow a second single crystal diamond body on a surface of the first single crystal diamond body. The second single crystal diamond body has an NV concentration less than or equal to 10 times lower than the NV− concentration in the first single crystal diamond body.
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公开(公告)号：US11335779B2
公开(公告)日：2022-05-17
申请号：US16977342
申请日：2019-02-28
申请人： KYOTO UNIVERSITY
IPC分类号： H01L29/16 , C01B32/28 , C01B32/26 , C23C16/27 , C30B25/02 , C30B29/04 , G01R33/26 , H01L21/02 , H01L29/167 , H01L39/12
摘要： A sensor element including a diamond in which nitrogen-vacancy centers in a diamond crystal structure stabilize in a negative charge state. By ensuring that the diamond of the sensor element is n-type phosphorus-doped and contains nitrogen-vacancy centers in the crystal structure, the probability that nitrogen-vacancy centers in the diamond lattice are in a neutral state decreases, and the nitrogen-vacancy centers stabilize in a negative charge state.
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公开(公告)号：US20220119983A1
公开(公告)日：2022-04-21
申请号：US17424081
申请日：2020-12-07
申请人： Plasmability, LLC
发明人： Robert J. Basnett , Andrew Francis Basnett , Amanda Charris-Hernandez , William Holber , Travis Charles Wade , Adam James Brown
摘要： A method of growing single crystal diamond assisted by polycrystalline diamond growth to enhance dimensions and quality of the single crystal diamond includes thermally mating a diamond seed on a top surface of a substrate holder providing a growth surface for a combination of single crystal diamond and polycrystalline diamond. A predetermined temperature difference between the diamond seed and the substrate holder during processing along with the plasma process conditions causes a single crystal diamond growth rate to be different from a polycrystalline growth rate by a predetermined amount. Process gasses are introduced, and a plasma is formed to grow both single crystal diamond and polycrystalline diamond on the growth surface so that the polycrystalline diamond grown adjacent to the single crystal diamond shields side surfaces of the growing single crystal diamond, thereby improving growth quality across the growing single crystal diamond.
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公开(公告)号：US20220089446A1
公开(公告)日：2022-03-24
申请号：US17302597
申请日：2021-05-07
摘要： A diamond powder comprising diamond particles having an average particle size of no more than 20 μm and a vacancy or impurity-vacancy point defect concentration of at least 1 ppm. At least 70% of the volume of diamond in the powder is formed from a single crystal growth sector. This leads to a substantially uniform concentration of vacancies or impurity-vacancy point defects in the diamond particles because the rate of impurity take-up during growth is heavily dependent on the growth sector, which in turn leads to a more uniform fluorescent response. There is also described a method for making such a powder.
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