公开(公告)号：US20240295763A1

公开(公告)日：2024-09-05

申请号：US18515795

申请日：2023-11-21

Applicant: Meta Platforms Technologies, LLC

Inventor： Kenneth Alexander Diest ,  Spencer Allan Wells ,  Zhaohui Yang ,  Nihar Ranjan Mohanty ,  Richard Farrell ,  Jilin Yang ,  Ehsan Arbabi

IPC: G02F1/05 ,  C03C17/23 ,  C30B29/30 ,  C30B29/32 ,  G02B6/34 ,  G03F7/00

CPC classification number: G02F1/05 ,  C03C17/23 ,  C30B29/30 ,  C30B29/32 ,  G02B6/34 ,  G03F7/0002 ,  G03F7/0005 ,  C03C2217/228 ,  C03C2217/23 ,  C03C2217/92

Abstract: A device includes a pair of electrodes and a dynamic material disposed between the pair of electrodes, the dynamic material including a crystalline microstructure configured to change between at least two states in response to a change in an electric field between the two electrodes. A material includes tetragonal lead magnesium niobate-lead titanate (PMN-PT) and at least one lanthanide series element. A method includes doping a lead magnesium niobate-lead titanate material with at least one lanthanide series element, and processing the PMN-PT material to form tetragonal PMN-PT. A further method includes forming a low refractive index nanostructured grating over a carrier substrate, forming a high refractive index layer over the low refractive index grating to produce a nanostructured coupling element, forming an adhesive layer over the nanostructured coupling element, and affixing the nanostructured coupling element to a high index waveguide.

公开(公告)号：US20240206342A1

公开(公告)日：2024-06-20

申请号：US17908899

申请日：2021-02-24

Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Toshiaki KURODA ,  Kenji SHIBATA ,  Kazutoshi WATANABE ,  Takeshi KIMURA

IPC: H10N30/853 ,  C30B28/12 ,  C30B29/02 ,  C30B29/30 ,  C30B29/68 ,  H10N30/076

CPC classification number: H10N30/8542 ,  C30B28/12 ,  C30B29/02 ,  C30B29/30 ,  C30B29/68 ,  H10N30/076

Abstract: There is provided a piezoelectric film, being a polycrystalline film comprised of potassium sodium niobate; containing at least one metal element selected from a group consisting of Cu and Mn; and having 1.0 or less ratio of a concentration B of the metal element at grain boundaries of crystals, with respect to a concentration A of the metal element in a matrix phase of the crystals.

公开(公告)号：US20240093404A1

公开(公告)日：2024-03-21

申请号：US18457324

申请日：2023-08-28

Applicant: Purdue Research Foundation

Inventor： Haiyan Wang ,  Robynn-Lynne Paldi ,  Aleem Siddiqui

IPC: C30B29/30 ,  C30B25/06 ,  C30B25/18

CPC classification number: C30B29/30 ,  C30B25/06 ,  C30B25/18

Abstract: A computer-implemented method of determining the number of photons contributing to an output of a photonic sensor, including receiving an electrical signal from the photonic sensor proportional to a number of photons the photonic sensor detects at its input as a function of time, wherein the photonic sensor is calibrated such that a response of the photonic sensor to a single photon detected is in a waveform comprising an amplitude and time, wherein the product amplitude X time is statistically bounded, determining a probabilistic boundary between one or more of electrical, optical, and thermal sources of noise of the sensor, acquiring each response wave form from the sensor through analog-to-digital conversion with a resolution in amplitude and time corresponding to accuracy required in quantifying the response, storing each acquired response, individually, in real-time, or in buffered packets in digital form, determining the number of photons for a specific time resolved acquisition, and effecting a summation of the count of photon arrivals obtained based on amplitude evaluation from each specific time resolved acquisition, for all time resolved acquisitions performed in a given observation period, yielding the number of photon arrivals associated with the amplitude evaluation.

公开(公告)号：US20240003052A1

公开(公告)日：2024-01-04

申请号：US18252853

申请日：2021-11-12

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Kunimitsu KATAOKA ,  Junji AKIMOTO

IPC: C30B29/30 ,  C30B13/14 ,  C30B13/28 ,  H01M10/0525 ,  H01M10/0562

CPC classification number: C30B29/30 ,  C30B13/14 ,  C30B13/28 ,  H01M10/0525 ,  H01M10/0562 ,  H01M2300/0071

Abstract: The lithium composite oxide single crystal has a chemical composition represented by Li7-3x-w-vGaxLa3Zr2-w-vTaWNbvO12 (0.02≤x

公开(公告)号：US20230179165A1

公开(公告)日：2023-06-08

申请号：US18061774

申请日：2022-12-05

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Florian DUPONT ,  Guillaume RODRIGUEZ ,  Laura SAUZE

IPC: H03H3/08 ,  H03H9/02 ,  H03H9/25 ,  C30B29/40 ,  C30B29/30 ,  C30B29/68 ,  C30B23/02 ,  C30B23/06

CPC classification number: H03H3/08 ,  H03H9/02559 ,  H03H9/02834 ,  H03H9/25 ,  C30B29/403 ,  C30B29/30 ,  C30B29/68 ,  C30B23/025 ,  C30B23/066

Abstract: A method for forming a lithium niobate- or lithium tantalum-based (LN/LT) layer includes providing a silicon-based substrate, forming nucleation layer on the substrate, and forming the LN/LT layer by epitaxy on the nucleation layer. The nucleation layer is chosen based upon a III-N material. The nucleation layer may be used in a surface acoustic wave device.

公开(公告)号：US11600766B2

公开(公告)日：2023-03-07

申请号：US16064420

申请日：2016-12-21

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Ionut Radu ,  Jean-Marc Bethoux

IPC: H01L41/312 ,  H01L41/319 ,  H03H3/02 ,  H01L41/187 ,  C30B25/18 ,  C30B29/22 ,  H01L41/08 ,  H01L41/09 ,  H01L41/335 ,  H03H3/08 ,  H03H9/25 ,  H03H9/54 ,  H03H9/64 ,  H01L41/316 ,  C30B29/30

Abstract: A method for manufacturing a monocrystalline piezoelectric material layer includes providing a donor substrate made of the piezoelectric material, providing a receiving substrate, transferring a so-called “seed layer” of the donor substrate onto the receiving substrate, and using epitaxy of the piezoelectric material on the seed layer until the desired thickness for the monocrystalline piezoelectric layer is obtained.

公开(公告)号：US20220364265A1

公开(公告)日：2022-11-17

申请号：US17555660

申请日：2021-12-20

Applicant: Purdue Research Foundation

Inventor： Haiyan Wang ,  Robynn-Lynne Paldi ,  Aleem Siddiqui

IPC: C30B29/30 ,  C30B25/06 ,  C30B25/18

Abstract: A method for making LNO film, including the steps of identifying a substrate, identifying a deposition target, placing the substrate and deposition target in a deposition environment, evolving target material into the deposition environment, and depositing evolved target material onto the substrate to yield an LNO film. The deposition environment defines a temperature of between 500 degrees Celsius and 750 degrees Celsius and a pressure of about 10−6 Torr. A seed or buffer layer may be first deposited onto the substrate, wherein the seed layer is about 30 mole percent gold and about 70 LiNbO3.

公开(公告)号：US20220325439A1

公开(公告)日：2022-10-13

申请号：US17639805

申请日：2020-09-04

Applicant: THE JOHNS HOPKINS UNIVERSITY

Inventor： William A. PHELAN ,  Tanya BERRY ,  Mekhola SINHA ,  Tyrel Matthew MCQUEEN

IPC: C30B29/30 ,  C30B13/16 ,  H01J1/144

Abstract: Metal oxides and method for forming the method oxides are provided. The disclosed functional metal oxides are single crystalline or polycrystalline metal oxides, such as, for example, SrVO3, and have dimensions, phase purity, and crystalline quality previously unachievable. The disclosed methods include a combination of a gas atmosphere, vacuum sintering, and laser-based directional solidification of a seed rod in contact with a feed rod that is scalable for production quantities.

公开(公告)号：US11450799B2

公开(公告)日：2022-09-20

申请号：US16772909

申请日：2018-08-07

Applicant: Jinan Jingzheng Electronics Co., Ltd.

Inventor： Xiuquan Zhang ,  Houbin Zhu ,  Wen Hu ,  Juting Luo ,  Hui Hu ,  Yangyang Li

IPC: H01L41/08 ,  C30B29/18 ,  C30B29/30 ,  H01L41/312 ,  H01L41/187 ,  H03H9/17 ,  H03H9/56

Abstract: The invention provides a micron-scale monocrystal film. The micron-scale monocrystal film includes 1) a substrate layer, and 2) a micron-scale monocrystal film layer located on the substrate layer, wherein a transition layer is interposed between the substrate layer and micron-scale monocrystal film layer, and the transition layer may include a first transition layer disposed adjacent to the substrate layer and a second transition layer disposed adjacent to the micron monocrystal film layer, wherein the transition layer may include H and an element from at least one kind of plasma gas used during the plasma bonding of the substrate layer and the micron-scale monocrystal film layer.

公开(公告)号：US11384450B2

公开(公告)日：2022-07-12

申请号：US16972997

申请日：2019-06-13

Applicant: OREGON STATE UNIVERSITY

Inventor： Michelle Dolgos ,  Dylan Fast ,  May Nyman ,  Brady J. Gibbons ,  Matthew O. Clark

IPC: C30B7/04 ,  C30B29/30 ,  B05D1/00 ,  C01G33/00 ,  H01L41/317

Abstract: Embodiments disclosed herein include potassium sodium niobate (KNN) films and methods of making such films. In an embodiment, a method of forming a potassium sodium niobate (KNN) film comprises preparing a solution comprising water, potassium hexaniobate salts, and sodium hexaniobate salts. In an embodiment, the solution is spin coated onto a substrate to form a film on at least a portion of a surface of the substrate. In an embodiment, the method may further comprise heat treating the film.