公开(公告)号：US12216050B2

公开(公告)日：2025-02-04

申请号：US17602578

申请日：2020-04-09

Applicant: CiTEX Holding GmbH

Inventor： Roland Böhm

IPC: G01B11/02 ,  G01B11/06 ,  G01B11/10 ,  G01B11/12 ,  G01B15/02 ,  G01N21/3581

Abstract: The invention relates to a method for calibrating a THz measuring apparatus (8), in particular a pipe, on a measurement object (10), comprising at least the following steps: providing a THz measuring apparatus (8) having a plurality of pivotable THz sensors (1), arranged in a circumferential direction around a measuring chamber (9), for outputting one THz transmitted beam (12) each along a sensor axis (B) (provision step); orienting the THz sensors (1) into a starting position in the measuring chamber (9) in which the measurement object (10) is received (orientation step in starting position); allocating the THz sensors (1) to at least one first and one second sensor group (group formation step); first calibration adjustment step, in which the second sensor group is adjusted as an adjustment group by means of the first sensor group as a starting group, and corresponding second calibration adjustment step, in which the first sensor group is adjusted as an adjustment group by means of the previously calibration-adjusted second sensor group as a starting group; wherein, in each of the calibration adjustment steps=by means of the THz sensors (S1, S3, S5, S7) of the starting group, spacing points on a surface (10a) of the measurement object (10) are determined, =sensor correction angles of the THz sensors (1; S2, S4, S6, S8) of the adjustment group are determined by means of the spacing points determined by the starting group, and =the THz sensors of the adjustment group are calibration-adjusted about the determined sensor correction angles (a).

公开(公告)号：US12050188B2

公开(公告)日：2024-07-30

申请号：US17441944

申请日：2020-03-27

Applicant: IHI Corporation

Inventor： Sayo Yamaha ,  Takahiro Fukumaru ,  Yuichi Yamaguchi

IPC: G01N23/046 ,  G01N3/08 ,  B32B5/02 ,  G01B15/02 ,  G01N21/84

CPC classification number: G01N23/046 ,  G01N3/08 ,  B32B5/02 ,  G01B15/02 ,  G01N2021/8444

Abstract: A strength evaluation method is a strength evaluation method for a composite material in which a plurality of fiber layers are laminated and includes a meandering state measuring process of measuring a meandering state of fibers of the plurality of fiber layers in a direction along the fiber layers, a meandering thickness measuring process of measuring a meandering thickness that is a thickness in a lamination direction of a part in which meanderings of fibers of the plurality of fiber layers occur, and a strength evaluation process of evaluating a strength of the composite material based on the meandering state and the meandering thickness.

公开(公告)号：US20240085174A1

公开(公告)日：2024-03-14

申请号：US18453266

申请日：2023-08-21

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Heath POIS ,  Wei T LEE ,  Lawrence BOT ,  Michael KWAN ,  Mark KLARE ,  Charles LARSON

IPC: G01B15/02 ,  G01N23/223 ,  G01N23/225 ,  G01N23/2251 ,  G01N23/2273

CPC classification number: G01B15/02 ,  G01N23/223 ,  G01N23/225 ,  G01N23/2251 ,  G01N23/2273 ,  G01N23/22

Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

公开(公告)号：US11892561B2

公开(公告)日：2024-02-06

申请号：US17633830

申请日：2020-08-10

Applicant: Nanowave Technologies Inc.

Inventor： Justin Dinsdale Miller ,  Charles William Tremlett Nicholls

IPC: G01S7/40 ,  G01B15/02 ,  H01Q13/20

CPC classification number: G01S7/4039 ,  G01B15/025 ,  H01Q13/20

Abstract: Disclosed herein is a system and method for determining a thickness of ice on Radio Frequency (RF) systems The system includes a sensor unit for use in determining the thickness of ice on a surface of a RADAR system having a RADAR antenna, the sensor unit including a sensor unit antenna tunable to a harmonic of a RADAR antenna signal, the harmonic having a frequency within an ice absorption band, wherein the sensor unit antenna emits the harmonic at a first signal strength; and, a sensor unit receiver communicatively coupled to the sensor unit antenna and configured to detect a second signal strength of the harmonic received by the sensor unit antenna.

公开(公告)号：US20230408430A1

公开(公告)日：2023-12-21

申请号：US18206033

申请日：2023-06-05

Applicant: Nova Measuring Instruments, Inc.

Inventor： Wei Ti Lee ,  Heath Pois ,  Mark Klare ,  Cornel Bozdog

IPC: G01N23/2273 ,  H01L21/66 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223

CPC classification number: G01N23/2273 ,  H01L22/12 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223 ,  G01N2223/305 ,  G01N2223/633 ,  G01N2223/61

Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

公开(公告)号：US11712604B2

公开(公告)日：2023-08-01

申请号：US17734754

申请日：2022-05-02

Applicant: Callaway Golf Company

Inventor： David M. Melanson

IPC: A63B37/06 ,  A63B37/00 ,  G01B15/02 ,  G01B15/04

CPC classification number: A63B37/0051 ,  A63B37/0039 ,  A63B37/0044 ,  A63B37/0045 ,  A63B37/0074 ,  A63B37/0075 ,  A63B37/0076 ,  G01B15/02 ,  G01B15/04 ,  A63B2209/00

Abstract: A golf ball comprising layers that have from 0.05% to 70% by weight of a radio-opaque filler, and wherein the concentration of the radio-opaque filler is measurably different in each layer is disclosed herein. The radio-opaque filler is preferably a compound based on barium, bismuth, tungsten, iodine, or reduced iron.

公开(公告)号：US11644429B2

公开(公告)日：2023-05-09

申请号：US17241536

申请日：2021-04-27

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Takuya Omoto ,  Yuzo Miura ,  Yuichi Nagamatsu

IPC: G01N23/04 ,  G01B15/02

CPC classification number: G01N23/04 ,  G01B15/02

Abstract: A method for calculating a laminate state of a CFRP laminate according to an embodiment includes acquiring a plurality of images of a cross section of the CFRP laminate orthogonal to a lamination direction by imaging the CFRP laminate with X-rays at a plurality of different positions in the lamination direction, the CFRP laminate including first layers including carbon fibers oriented in a first direction orthogonal to the lamination direction and second layers including carbon fibers oriented in a second direction orthogonal to the lamination direction and different from the first direction, and calculating a parameter correlated with a quantity of voids formed in the first layers and the second layers from the plurality of acquired images, and distinguishing between the first layers and the second layers using the calculated parameter.

公开(公告)号：US20230074398A1

公开(公告)日：2023-03-09

申请号：US17947208

申请日：2022-09-19

Applicant: NOVA LTD.

Inventor： VLADIMIR MACHAVARIANI ,  MICHAEL SHIFRIN ,  DANIEL KANDEL ,  VICTOR KUCHEROV ,  IGOR ZISELMAN ,  RONEN URENSKI ,  MATTHEW SENDELBACH

IPC: H01L21/67 ,  G01B15/02 ,  G01N23/04 ,  G01N23/06 ,  G05B13/04

Abstract: A metrology method for use in determining one or more parameters of a patterned structure, the method including providing raw measured TEM image data, TEMmeas, data indicative of a TEM measurement mode, and predetermined simulated TEM image data including data indicative of one or more simulated TEM images of a structure similar to the patterned structure under measurements and a simulated weight map including weights assigned to different regions in the simulated TEM image corresponding to different features of the patterned structure, performing a fitting procedure between the raw measured TEM image data and the predetermined simulated TEM image data and determining one or more parameters of the structure from the simulated TEM image data corresponding to a best fit condition.

公开(公告)号：US11600497B2

公开(公告)日：2023-03-07

申请号：US16836828

申请日：2020-03-31

Applicant: KLA CORPORATION

Inventor： Sandeep Madhogarhia ,  Hari Sriraman Pathangi ,  Rohit Bhat

IPC: H01L21/461 ,  G01B7/31 ,  H01L21/02 ,  G01B15/02 ,  G01N23/22

Abstract: A semiconductor review tool receives absolute Z-height values for the semiconductor wafer, such as a semiconductor wafer with a beveled edge. The absolute Z-height values can be determined by a semiconductor inspection tool. The semiconductor review tool reviews the semiconductor wafer within a Z-height based on the absolute Z-height values. Focus can be adjusted to within the Z-height.

公开(公告)号：US20230018020A1

公开(公告)日：2023-01-19

申请号：US17756917

申请日：2020-11-18

Applicant: Schlumberger Technology Corporation

Inventor： Jill F. Geddes ,  Trevor Lloyd Hughes ,  Evgeny Borisovich Barmatov

IPC: G01N23/223 ,  G01B15/02

Abstract: A method for measuring average thickness of a metal or alloy coating on a metal or alloy substrate using an X-ray fluorescence (XRF) spectrometer is used when the coating has an uneven surface at different distances from a measurement window of the XRF spectrometer. The method includes measuring elemental composition of the coating or substrate using the XRF spectrometer and obtaining the average thickness of the coating using a calibration relationship between coating thickness and elemental composition of the coating or substrate. The metal or alloy coating may be a metal or alloy coating of a plurality of outer armor wires wrapped around a cable. The method may be used to analyze coating thickness changes over time or along the length of the cable, or to analyze a corrosive environment in order to choose optimal material for a metal or alloy coating.