公开(公告)号：US12216397B2

公开(公告)日：2025-02-04

申请号：US18380956

申请日：2023-10-17

Applicant: AGC Inc.

Inventor： Daijiro Akagi ,  Hirotomo Kawahara ,  Toshiyuki Uno ,  Ichiro Ishikawa ,  Kenichi Sasaki

IPC: H01L21/033 ,  G03F1/24 ,  G03F1/32 ,  H01L21/02

Abstract: A reflective mask blank for EUV lithography includes: a substrate; a multilayer reflective film for reflecting EUV light; and a phase shift film for shifting a phase of EUV light, the multilayer reflective film and the phase shift film formed on or above the substrate in this order. The phase shift film includes a layer 1 including ruthenium (Ru) and at least one selected from the group consisting of oxygen (O) and nitrogen (N). Among diffraction peaks derived from the phase shift film observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half value width FWHM of 1.0° or more.

公开(公告)号：US20250036019A1

公开(公告)日：2025-01-30

申请号：US18361609

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Min WANG ,  Ken-Hsien HSIEH

IPC: G03F1/24

Abstract: An extreme ultraviolet (EUV) photolithography reticle includes a substrate and a reflective multilayer on the substrate. The reflective multilayer includes a plurality of stacked first pairs of layers, each pair include a first layer of a first material and a second layer of a second material on the first layer. The reflective multilayer includes a second pair of layers between two of the first pairs and including a first process assistance layer and a third layer of the second material on the process assistance layer. The first material and the second material are selectively etchable with respect to the first process assistance layer. The reticle includes a plurality of first absorption structures extending from a top of the reflective multilayer to the first process assistance layer and configured to absorb extreme ultraviolet light.

公开(公告)号：US20240402589A1

公开(公告)日：2024-12-05

申请号：US18270178

申请日：2021-12-14

Applicant: HOYA CORPORATION

Inventor： Hideaki NARAHARA ,  Takashi UCHIDA

IPC: G03F1/60 ,  G03F1/24

Abstract: Provided is a substrate for mask blank, a substrate with multilayer reflective film, and a mask blank
The substrate for mask blank has two opposing main surfaces. In an inner region of a square having a side of 132 mm based on the center of the substrate, a synthetic surface profile is produced from surface profiles of the two main surfaces of the substrate, a relationship between spatial frequency fr[mm−1] and power spectral density Pr[μm2/(mm−1)] is calculated from the synthetic surface profile, and within the range of spatial frequency fr of 0.02 [mm−1] or more and 0.40 [mm−1] or less, a relationship Pr

公开(公告)号：US20240377722A1

公开(公告)日：2024-11-14

申请号：US18779098

申请日：2024-07-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Chiang Tu ,  Chun-Lang Chen ,  Shih-Hao Yang ,  Jheng-Yuan Chen

IPC: G03F1/26 ,  G03F1/22 ,  G03F1/24 ,  G03F1/52 ,  G03F1/54 ,  G03F1/80 ,  H01L21/033

Abstract: A mask includes a reflective layer, an absorption layer, a buffer layer and an absorption part. The absorption layer is disposed over the reflective layer. The buffer layer is disposed between the reflective layer and the absorption layer. The absorption part is disposed in the reflective layer, the buffer layer and the absorption layer.

公开(公告)号：US12124164B2

公开(公告)日：2024-10-22

申请号：US18621502

申请日：2024-03-29

Applicant: AGC Inc.

Inventor： Daijiro Akagi ,  Takuma Kato ,  Keishi Tsukiyama ,  Toshiyuki Uno ,  Hiroshi Hanekawa ,  Ryusuke Oishi ,  Sadatatsu Ikeda ,  Yukihiro Iwata ,  Chikako Hanzawa

IPC: G03F1/24 ,  G03F1/48

CPC classification number: G03F1/24 ,  G03F1/48

Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.

公开(公告)号：US12124162B2

公开(公告)日：2024-10-22

申请号：US17942257

申请日：2022-09-12

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Takuro Kosaka ,  Taiga Ogose

IPC: G03F1/24 ,  G03F1/40 ,  G03F1/54 ,  G03F1/60

CPC classification number: G03F1/24 ,  G03F1/40 ,  G03F1/54 ,  G03F1/60

Abstract: A substrate with a film for a reflective mask blank including a substrate, a multilayer reflection film and a back surface conductive film having a composition at the side in contact with the substrate and a different composition at the side remotest from the substrate is provided. The composition at the side in contact with the substrate contains silicon and nitrogen, as main components, and the different composition at the side remotest from the substrate contains tantalum, as a main component, and at least one element selected from the group consisting of silicon, germanium and aluminum.

公开(公告)号：US20240337918A1

公开(公告)日：2024-10-10

申请号：US18749170

申请日：2024-06-20

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hung-Yi TSAI ,  Wei-Che HSIEH ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Ping-Hsun LIN ,  Hao-Ping CHENG ,  Ming-Wei CHEN ,  Szu-Ping TSAI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

公开(公告)号：US20240337917A1

公开(公告)日：2024-10-10

申请号：US18745236

申请日：2024-06-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Pei-Cheng HSU ,  Ching-Huang CHEN ,  Hung-Yi TSAI ,  Ming-Wei CHEN ,  Hsin-Chang LEE ,  Ta-Cheng LIEN

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes one or more alternating pairs of a first Cr based layer and a second Cr based layer different from the first Cr based layer.

公开(公告)号：US20240319578A1

公开(公告)日：2024-09-26

申请号：US18731088

申请日：2024-05-31

Applicant: HOYA CORPORATION

Inventor： Masanori NAKAGAWA ,  Tsutomu SHOKI

IPC: G03F1/24 ,  G03F1/46 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/46 ,  G03F7/2004

Abstract: A reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern while suppressing an increase in the thickness of an absorber film when EUV exposure is conducted in an atmosphere including hydrogen gas. A reflective mask blank comprises a substrate, a multilayer reflection film on the substrate, and an absorber film on the multilayer reflection film. The reflective mask blank is characterized in that: the absorber film includes an absorption layer and a reflectance adjustment layer; the absorption layer contains tantalum (Ta), nitrogen (N), and at least one added element selected from hydrogen (H) and deuterium (D); the absorption layer includes a lower surface region including a surface on the substrate side, and an upper surface region including a surface on the side opposite to the substrate; and the concentration (at. %) of the added element in the lower surface region and the concentration (at. %) of the added element in the upper surface region are different.

公开(公告)号：US20240302731A1

公开(公告)日：2024-09-12

申请号：US18658522

申请日：2024-05-08

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The intermediate layer includes a material having a lower hydrogen diffusivity than a material of the capping layer.