-
公开(公告)号：US20250028236A1
公开(公告)日：2025-01-23
申请号：US18678090
申请日：2024-05-30
Applicant: SAMSUNG SDI CO., LTD.
Inventor： Younhee NAM , Yushin PARK , Seunghyun KIM , Seulgi JEONG , Sangchol PARK , Minji SO , Jooyoung CHUNG
IPC: G03F1/50
Abstract: A hardmask composition, a hardmask layer manufactured from the hardmask composition, and a method of forming a pattern or patterns using the hardmask layer manufactured from the hardmask composition, the hardmask composition includes a polymer including a structural unit represented by Chemical Formula 1; and a solvent,
-
公开(公告)号：US12013631B2
公开(公告)日：2024-06-18
申请号：US18073794
申请日：2022-12-02
Applicant: HOYA CORPORATION
Inventor： Hiroaki Shishido
Abstract: A mask blank including a light shielding film pattern having high ArF light fastness.
The light shielding film is on a transparent substrate. In the mask blank, the light shielding film is a single layer film formed of a material containing silicon and nitrogen, and the light shielding film has an optical density to an ArF excimer laser exposure light of 2.5 or more, a surface reflectance to the exposure light of 40% or less, a back-surface reflectance to the exposure light of 40% or less, a transmittance to a light having a wavelength of 900 nm of 50% or less, an extinction coefficient to a light having a wavelength of 900 nm of 0.04 or more, and a thickness of 60 nm or less.-
公开(公告)号：US11940737B2
公开(公告)日：2024-03-26
申请号：US17315087
申请日：2021-05-07
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Hsueh-Yi Chung , Yung-Cheng Chen , Fei-Gwo Tsai , Chi-Hung Liao , Shih-Chi Fu , Wei-Ti Hsu , Jui-Ping Chuang , Tzong-Sheng Chang , Kuei-Shun Chen , Meng-Wei Chen
CPC classification number: G03F7/70433 , G03F1/50 , G03F1/68 , G03F1/70 , G03F1/78 , G03F7/20 , G03F7/70141 , G03F7/70158 , G03F7/70716 , H01L22/30
Abstract: A method includes receiving a device design layout and a scribe line design layout surrounding the device design layout. The device design layout and the scribe line design layout are rotated in different directions. An optical proximity correction (OPC) process is performed on the rotated device design layout and the rotated scribe line design layout. A reticle includes the device design layout and the scribe line design layout is formed after performing the OPC process.
-
公开(公告)号：US20240035167A1
公开(公告)日：2024-02-01
申请号：US18483673
申请日：2023-10-10
Applicant: Kateeva, Inc.
Inventor： Nava Shpaisman , Moshe Frenkel
IPC: C23F1/02 , C09D11/101 , B41M5/00 , G03F7/20 , H05K3/00 , G03F1/50 , H10K71/13 , H05K3/06 , C09D11/30 , C23F1/00
CPC classification number: C23F1/02 , C09D11/101 , B41M5/0058 , G03F7/2018 , H05K3/0002 , H05K3/0017 , G03F1/50 , H10K71/13 , H10K71/135 , H05K3/061 , C09D11/30 , C23F1/00 , H05K3/0079 , H05K2203/0392 , H05K2203/013 , H05K2203/1173 , H05K2203/0582
Abstract: A method of forming a metallic pattern on a substrate is provided. The method includes applying onto a metallic surface, a chemically surface-activating solution having an activating agent that chemically activates the metallic surface; non-impact printing an etch-resist ink on the activated surface to produce an etch resist mask according to a predetermined pattern, wherein at least one ink component within the etch-resist ink undergoes a chemical reaction with the activated metallic surface to immobilize droplets of the etch-resist ink when hitting the activated surface; performing an etching process to remove unmasked metallic portions that are not covered with the etch resist mask; and removing the etch-resist mask.
-
5.发明公开公开(公告)号：US20230311493A1
公开(公告)日：2023-10-05
申请号：US18184076
申请日：2023-03-15
Applicant: CANON KABUSHIKI KAISHA
Inventor： TETSUSHI ISHIKAWA
CPC classification number: B41J2/04586 , G03F1/48 , G03F1/82 , G03F1/50 , B41J2/25 , B41J2/17503
Abstract: Provided is a method for manufacturing an element substrate for use in a liquid ejection head for ejecting a liquid to a recording medium. The element substrate, includes: a substrate having a nozzle including an ejection port, and a pressure generating chamber communicating with the nozzle, and subjected to a liquid repellent treatment on a part of a surface on a side opposed to the recording medium; and a generating element for generating an energy for ejecting the liquid. The method for manufacturing an element substrate includes: a liquid repellent treatment step of performing the liquid repellent treatment on the substrate; and a liquid repellent region removing step of removing a part of a liquid repellent region subjected to the liquid repellent treatment so that a non-liquid repellent region not subjected to the liquid repellent treatment is exposed at a surface of the substrate opposed to the recording medium.
-
Patent Agency Ranking
公开(公告)号：US11635680B2
公开(公告)日：2023-04-25
申请号：US17405093
申请日：2021-08-18
Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
Inventor： Mei-Li Wang
Abstract: An overlay pattern includes a light-transmitting region and a first light-proof region. The first light-proof region and the light-transmitting region are arranged on a same plane, and an area of the first light-proof region is larger than an area of the light-transmitting region. An orthographic projection of the first light-proof region on the plane and an orthographic projection of the light-transmitting region on the plane do not overlap and form a first rectangular region.
-
公开(公告)号：US11555783B2
公开(公告)日：2023-01-17
申请号：US16585374
申请日：2019-09-27
Applicant: Carl Zeiss SMT GmbH
Inventor： Oliver Beyer , Michael Gerhard
Abstract: A method for detecting deposited particles (P) on a surface (11) of an object (3, 14) includes: irradiating a partial region of the surface (11) of the object (3, 14) with measurement radiation; detecting measurement radiation scattered on the irradiated partial region, and detecting particles in the partial region of the surface of the object (3, 14) based on the detected measurement radiation. In the steps of irradiating and detecting, the surface (11) of the object (3, 14) has an anti-reflective coating (13) and/or a surface structure (15) for reducing the reflectivity of the surface (11) for the measurement radiation (9), wherein the particle detection limit is lowered due to the anti-reflective coating (13) and/or the surface structure (15). Also disclosed are a wafer (3) and a mask blank for carrying out the method.
-
公开(公告)号：US11543744B2
公开(公告)日：2023-01-03
申请号：US17397642
申请日：2021-08-09
Applicant: HOYA CORPORATION
Inventor： Hiroaki Shishido
Abstract: A mask blank including a light shielding film pattern having high ArF light fastness.
The light shielding film is on a transparent substrate. In the mask blank, the light shielding film is a single layer film formed of a material containing silicon and nitrogen, and the light shielding film has an optical density to an ArF excimer laser exposure light of 2.5 or more, a surface reflectance to the exposure light of 40% or less, a back-surface reflectance to the exposure light of 40% or less, a transmittance to a light having a wavelength of 900 nm of 50% or less, an extinction coefficient to a light having a wavelength of 900 nm of 0.04 or more, and a thickness of 60 nm or less.-
公开(公告)号：US20220136113A1
公开(公告)日：2022-05-05
申请号：US17647756
申请日：2022-01-12
Applicant: Kateeva, Inc.
Inventor： Nava Shpaisman , Moshe Frenkel
IPC: C23F1/02 , H05K3/00 , C09D11/101 , H05K3/06 , G03F7/20 , C09D11/30 , G03F1/50 , H01L51/00 , B41M5/00 , C23F1/00
Abstract: A method of forming a metallic pattern on a substrate is provided. The method includes applying onto a metallic surface, a chemically surface-activating solution having an activating agent that chemically activates the metallic surface; non-impact printing an etch-resist ink on the activated surface to produce an etch resist mask according to a predetermined pattern, wherein at least one ink component within the etch-resist ink undergoes a chemical reaction with the activated metallic surface to immobilize droplets of the etch-resist ink when hitting the activated surface; performing an etching process to remove unmasked metallic portions that are not covered with the etch resist mask; and removing the etch-resist mask.
-
公开(公告)号：US20210375807A1
公开(公告)日：2021-12-02
申请号：US17404870
申请日：2021-08-17
Applicant: Intel Corporation
Inventor： Charles H. WALLACE , Hossam A. ABDALLAH , Elliot N. TAN , Swaminathan SIVAKUMAR , Oleg GOLONZKA , Robert M. BIGWOOD
IPC: H01L23/00 , G03F7/00 , G03F7/40 , H01L21/027 , G03F1/36 , G03F1/70 , G03F7/20 , H01L21/02 , H01L21/263 , H01L27/02 , G03F1/50 , G03F7/16 , H01L21/306 , H01L21/308
Abstract: Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may be arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern. The pattern decomposition techniques may be integrated into any number of patterning processes, such as litho-freeze-litho-etch and litho-etch-litho-etch patterning processes.
-
-
-
-
-
-
-
-
-
Search Results
509
records
(took 0.019 seconds)
