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    SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD
    5.
    发明公开
    SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD 审中-公开

    公开(公告)号：US20230213852A1

    公开(公告)日：2023-07-06

    申请号：US18148051

    申请日：2022-12-29

    Applicant: SEMES CO., LTD.

    Inventor： Ji Hoon Jeong ,  Young Dae Chung ,  Hyun Yoon

    IPC: G03F1/78 ,  G03F1/70

    CPC classification number: G03F1/78 ,  G03F1/70

    Abstract: Disclosed is a method of treating a substrate, the method including: supplying a liquid to the substrate, emitting a laser to the substrate supplied with the liquid to heat the substrate, and emitting imaging light for capturing the substrate to obtain an image of the substrate including a region to which the laser is emitted, in which the laser and the imaging light are emitted to the substrate through a head lens, and a divergence angle of the laser emitted from the head lens and a divergence angle of the imaging light are matched with each other.

    METHOD FOR OBTAINING AN EXPOSURE DATA AND METHOD FOR MANUFACTURING AN EXPOSURE MASK USING THE SAME
    6.
    发明公开
    METHOD FOR OBTAINING AN EXPOSURE DATA AND METHOD FOR MANUFACTURING AN EXPOSURE MASK USING THE SAME 审中-公开

    公开(公告)号：US20230152682A1

    公开(公告)日：2023-05-18

    申请号：US17821004

    申请日：2022-08-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Soeun Shin

    IPC: G03F1/70 ,  G03F1/78

    CPC classification number: G03F1/70 ,  G03F1/78

    Abstract: A method for obtaining exposure data may be provided. MTO (Mask Tape Out) design data for a mask pattern may be received. A mask data preparation operation with respect to the MTO design data may be performed to obtain exposure data. Two-dimensional contours of a plurality of types of test patterns in an exposure mask may be extracted through simulation using a mask process model. First critical dimensions may be measured at measurement points of the contour of each of the plurality of types of test patterns by using a metrology algorithm. The first critical dimensions may be averaged to obtain a first average critical dimension for each of the plurality of types of test patterns. Second critical dimensions in consideration of dispersion in each of the plurality of types of test patterns may be measured using an inverse function of a standard normal distribution, and the second critical dimensions may be averaged to obtain a second average critical dimension for each of the plurality of types of test patterns. A mean to target (MTT) value may be calculated as a difference between the second average critical dimension and a target critical dimension for each of the plurality of types of test patterns. Differences between ones of the MTT values may be calculated. When one or more of the differences between the ones of the MTT values may is outside of a tolerance threshold, the exposure data may be corrected.

    Dummy insertion for improving throughput of electron beam lithography
    9.
    发明授权
    Dummy insertion for improving throughput of electron beam lithography 有权

    公开(公告)号：US11054748B2

    公开(公告)日：2021-07-06

    申请号：US16138402

    申请日：2018-09-21

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Shih-Ming Chang ,  Wen Lo ,  Chun-Hung Liu ,  Chia-Hua Chang ,  Hsin-Wei Wu ,  Ta-Wei Ou ,  Chien-Chih Chen ,  Chien-Cheng Chen

    IPC: G03F7/20 ,  G03F1/36 ,  G03F1/78

    Abstract: An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.

    Extreme ultraviolet alignment marks
    10.
    发明授权
    Extreme ultraviolet alignment marks 有权

    公开(公告)号：US10859906B2

    公开(公告)日：2020-12-08

    申请号：US16504809

    申请日：2019-07-08

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED

    Inventor： Yi-Fu Hsieh ,  Chih-Chiang Tu ,  Jong-Yuh Chang ,  Hsin-Chang Lee

    IPC: G03F1/42 ,  G03F1/84 ,  G03F1/24 ,  G03F1/48 ,  G03F1/54 ,  G03F1/78 ,  G03F1/80 ,  G03F1/82

    Abstract: The present disclosure describes a method to form alignment marks on or in the top layer of an extreme ultraviolet (EUV) mask blank without the use of photolithographic methods. For example, the method can include forming a metal structure on the top layer of the EUV mask blank by dispensing a hexacarbonylchromium vapor on the top layer of the EUV mask and exposing the hexacarbonylchromium vapor to an electron-beam. The hexacarbonylchromium vapor is decomposed to form the metal structure at an area which is proximate to where the hexacarbonylchromium vapors interact with the electron-beam. In another example, the method can include forming a patterned structure in the top layer of an EUV mask blank with the use of an etcher aperture and an etching process.

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