ORGANOTIN ALKOXIDES AS PRECURSORS FOR PATTERNING COMPOSITIONS WITH FLUORINE SUBSTITUENTS AND CARBON-CARBON DOUBLE BONDS

    公开(公告)号:US20240427239A1

    公开(公告)日:2024-12-26

    申请号:US18731702

    申请日:2024-06-03

    Abstract: Organotin compositions suitable for radiation based patterning have ligands providing fluorinated groups and unsaturated carbon-carbon bonds, such as C═C bonds. The fluorinated groups and unsaturated carbon-carbon bonds may or may not be located on the same ligand. Blends of precursors with different ligands provide added flexibility with respect to precursor design. Fluorinated organometallic compounds can be represented by the formula RUFSn(OR′)3, wherein RUF is an organo group with 1 to 31 carbon atoms with at least one C═C bond and at least one fluorine atom bonded to a carbon, with the organo group forming a C—Sn bond, wherein R′ is an organo group with 1 to 10 carbon atoms. Precursors are suitable for solution based deposition or vapor based deposition.

    RESIST UNDERLAYER FILM-FORMING COMPOSITION

    公开(公告)号:US20240427238A1

    公开(公告)日:2024-12-26

    申请号:US18698428

    申请日:2022-10-03

    Abstract: A resist underlayer film-forming composition improves an ability to fill patterns during baking by improving heat-reflowability of a polymer; a resist underlayer film being a baked product of a coating film formed from the resist underlayer film-forming composition; and a method for producing a semiconductor device includes a step of forming the resist underlayer film. The resist underlayer film-forming composition includes a compound of the following formula (A) or (B) and a solvent.

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