公开(公告)号：US20250068067A1

公开(公告)日：2025-02-27

申请号：US18756345

申请日：2024-06-27

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiro Fukushima ,  Satoshi Watanabe ,  Keiichi Masunaga ,  Masaaki Kotake ,  Yuta Matsuzawa

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/20 ,  G03F7/32

Abstract: The onium salt is capable of generating an acid with controlled diffusion, a chemically amplified positive resist composition comprising the onium salt. The onium salt contains a fluorinated alkanesulfonic acid anion having an alkyl or fluoroalkyl group and an iodized aromatic ring generates an acid with controlled diffusion. A chemically amplified positive resist composition comprising the onium salt is also provided.

公开(公告)号：US12235579B2

公开(公告)日：2025-02-25

申请号：US17548595

申请日：2021-12-13

Applicant: FUJIFILM Corporation

Inventor： Keiyu Ou ,  Naohiro Tango ,  Kei Yamamoto ,  Kazuhiro Marumo

IPC: G03F7/004 ,  C07C309/17 ,  C07C309/42 ,  C07C311/09 ,  C07C311/48 ,  C07C311/51 ,  C07C381/12 ,  C07D327/06 ,  C07D327/08 ,  C07D333/46 ,  C07D333/76 ,  C08F220/18 ,  C08F220/28 ,  G03F7/038 ,  G03F7/039

Abstract: A method for producing an actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention is a method for producing an actinic ray-sensitive or radiation-sensitive resin composition including at least a resin having a polarity that increases due to decomposition by the action of an acid, a compound that generates an acid upon irradiation with actinic rays or radiation, and a solvent, in which the compound that generates an acid upon irradiation with actinic rays or radiation includes one or more compounds selected from the group consisting of a compound (I) to (III) below, and the actinic ray-sensitive or radiation-sensitive resin composition is produced by mixing a first solution including the resin having a polarity that increases by the action of an acid and a first solvent with the one or more compounds selected from the group consisting of the compound (I) to (III).

公开(公告)号：US20250053091A1

公开(公告)日：2025-02-13

申请号：US18778795

申请日：2024-07-19

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Ahra CHO ,  Yoojeong CHOI ,  Jaeyeol BAEK ,  Soonhyung KWON ,  Hwayoung JIN ,  Seongjin KIM

IPC: G03F7/09 ,  G03F7/004 ,  G03F7/039

Abstract: Disclosed are a resist underlayer composition, and a method of forming a pattern using the resist underlayer composition. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof, a photoacid generator having a mass reduction rate of about 0% after 3 minutes from the time of measurement during thermogravimetric analysis (TGA) at 205° C. in an air atmosphere (air gas), and a solvent. The definitions of Chemical Formula 1 and Chemical Formula 2 are as described in the specification.

公开(公告)号：US20250053088A1

公开(公告)日：2025-02-13

申请号：US18718710

申请日：2022-12-22

Applicant: NISSAN CHEMICAL CORPORATION

Inventor： Tomotada HIROHARA ,  Mamoru TAMURA

IPC: G03F7/039 ,  C08L63/04 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32

Abstract: A composition for forming a resist underlayer film, containing a solvent and a polymer including a structure represented by formula (A) below. In formula (A), * represents a bond.

公开(公告)号：US20250051501A1

公开(公告)日：2025-02-13

申请号：US18719786

申请日：2022-12-12

Applicant: TOKYO OHKA KOGYO CO., LTD.

Inventor： Minoru Adegawa ,  Tsuyoshi Nakamura ,  Daichi Takaki ,  Hiromitsu Tsuji ,  Kumi Nakamura

IPC: C08F220/28 ,  G03F7/00 ,  G03F7/004 ,  G03F7/039 ,  G03F7/16

Abstract: A resist composition containing a resin component that exhibits changed solubility in a developing solution under action of an acid, a photodecomposable base, and a fluorine additive component. The fluorine additive component includes a polymeric compound having a constitutional unit represented by General Formula (f01-1) and a constitutional unit represented by General Formula (f02-1). In the formulas, R represents a hydrogen atom; Vf01 represents an alkylene group or a halogenated alkylene group; Yf01 represents —CO—O— or —O—CO—; Rf01 represents an organic group containing a fluorine atom; Vf02 represents a divalent hydrocarbon group; Rf02 represents an acid dissociable group represented by General Formula (f02-r1-1); Rf021, Rf022, Rf023, Rf024, and Rf025 represent a hydrocarbon group; and Yf02 represents a quaternary carbon atom

公开(公告)号：US20250044701A1

公开(公告)日：2025-02-06

申请号：US18919818

申请日：2024-10-18

Applicant: JSR CORPORATION

Inventor： Kazunori SAKAI ,  Tatsuya KASAI ,  Ayaka SUZUKI ,  Akitaka NII

IPC: G03F7/00 ,  C08K5/5419 ,  C09D133/06 ,  G03F7/039 ,  G03F7/075 ,  G03F7/16 ,  H01L21/027

Abstract: A method for producing a semiconductor substrate includes: applying a silicon-containing composition directly or indirectly to a substrate to form a silicon-containing film; applying a composition for forming a resist film to the silicon-containing film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The silicon-containing composition includes: a silicon-containing compound; a polymer including a structural unit represented by formula (1); and a solvent. A content of the silicon-containing compound in the silicon-containing composition relative to 100% by mass of components other than the solvent in the silicon-containing composition is from 50% to 99.9% by mass. RA1 is a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and RA2 is a monovalent organic group having 1 to 20 carbon atoms.

公开(公告)号：US20250044686A1

公开(公告)日：2025-02-06

申请号：US18764931

申请日：2024-07-05

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Yaeun SEO ,  Jimin KIM ,  Minyoung LEE ,  Eunmi KANG ,  Taegeun SEONG ,  Changsoo WOO ,  Sumin JANG ,  Bukeun OH ,  Chungheon LEE

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/039

Abstract: Disclosed is a method of forming patterns including coating a metal-containing resist composition on a substrate; a heat treatment including drying and heating to form a metal-containing resist layer on the substrate; exposing a metal-containing resist layer using a patterned mask; and developing including coating a developer composition to remove unexposed regions to form a resist pattern, wherein the coating the metal-containing resist composition is performed by coating the metal-containing resist composition with a spin coater at a speed of about 100 to about 1,500 rpm for about 60 to about 120 seconds, the heating is performed at a temperature of about 90 to about 200° C. for about 30 to about 120 seconds, the exposing the metal-containing resist layer is performed by irradiating extreme ultraviolet light, light having a wavelength of about 5 nm to about 50 nm, or a combination thereof.

公开(公告)号：US20250036028A1

公开(公告)日：2025-01-30

申请号：US18713393

申请日：2022-12-05

Applicant: TOKYO OHKA KOGYO CO., LTD.

Inventor： Tomoyuki Hirano ,  Tomonari Sunamichi ,  Haruna Hashimoto ,  Yusuke Nakagawa

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/038

Abstract: A resist composition including a polymer compound having a constitutional unit represented by General Formula (a10-1) below, an onium salt-based acid generator, a crosslinking agent, and a polynuclear phenol low-molecular-weight compound containing 5 or less phenyl groups, in which the resist composition has a solid content concentration of 15% by mass or greater. In the formula, R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Yax1 represents a single bond or a divalent linking group; Wax1 represents an aromatic hydrocarbon group which may have a substituent; and nax1 represents an integer of 1 or greater

公开(公告)号：US20250021003A1

公开(公告)日：2025-01-16

申请号：US18537601

申请日：2023-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol KANG ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Minsang KIM ,  Beomseok KIM ,  Hana KIM ,  Hoyoon PARK ,  Chanjae AHN ,  Jaejun LEE ,  Sungwon CHOI

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/038

Abstract: Provided are a polymer including a first repeating unit represented by Formula 1 below, a resist composition including the same, a method of forming a pattern by using the same, and a monomer represented by Formula 10 below. In Formulae 1 and 10, L11 to L13, a11 to a13, X11, Rf, and R11 to R13 are as described in the specification.

公开(公告)号：US20250021002A1

公开(公告)日：2025-01-16

申请号：US18705591

申请日：2021-11-30

Applicant: SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. ,  CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD.

Inventor： Shunong FANG ,  Su WANG ,  Zhiyue GENG

IPC: G03F7/039 ,  C08F222/40 ,  C08F234/02 ,  G03F7/004

Abstract: Disclosed in the present invention are a bottom anti-reflective coating for deep ultraviolet lithography, a preparation method therefor and the use thereof. A polymer disclosed in the present invention is prepared by the following method: (1) preheating a solvent I; (2) mixing a monomer as shown in formula (A), a monomer as shown in formula (B), a monomer as shown in formula (C), a cross-linking agent as shown in formula (L), and an initiator and a solvent II to obtain a mixed solution; and (3) adding the mixed solution to a preheated solvent and perform a polymerization reaction, wherein step (1) and step (2) are in no particular order. The bottom anti-reflective coating for deep ultraviolet lithography can reduce the reflectivity, and after the bottom anti-reflective coating is spin-coated with a photoresist, no scum formed by the bottom anti-reflective coating is observed.