Wide-swing intrinsic MOSFET cascode current mirror

    公开(公告)号:US11966247B1

    公开(公告)日:2024-04-23

    申请号:US18160536

    申请日:2023-01-27

    Inventor: Rogelio Cicili

    CPC classification number: G05F3/262 G05F3/205

    Abstract: Methods and devices for a wide-swing cascode current mirror with low headroom voltage and high output impedance are presented. An input leg of the current mirror includes a composite transistor in series connection with an intrinsic transistor. The composite transistor includes two series-connected regular transistors with respective sizes that are twice the size of the intrinsic transistor. An output leg of the current mirror includes a regular transistor in series connection with an intrinsic transistor. A gate voltage of the composite transistor, provided at a node that is common to gates of the two series-connected regular transistors, self-establishes when a reference current flows through the input leg. The self-established gate voltage is used to bias the regular transistor of the output leg. Biasing voltages to gates of the intrinsic transistors is provided by an intermediate node that provides the series connection of the regular transistors of the composite transistor.

    Bandgap reference circuit
    3.
    发明授权

    公开(公告)号:US11846962B2

    公开(公告)日:2023-12-19

    申请号:US17740589

    申请日:2022-05-10

    CPC classification number: G05F3/267 G05F3/20 G05F3/22 G05F3/26 H03F3/45475

    Abstract: A bandgap reference circuit includes a bandgap reference core circuit that includes a first bipolar transistor having a first emitter current density and a first base-emitter voltage, a second bipolar transistor having a second emitter current density that is smaller than the first emitter current density and having a second base-emitter voltage, a resistor that is connected to the emitter of the second bipolar transistor, and a differential amplifier circuit that is configured to control first and second emitter currents through the first and second bipolar transistors, respectively, such that a sum of the second base-emitter voltage and a voltage drop across the resistor approximates the first base-emitter voltage. The bandgap reference circuit further includes a first replica bipolar transistor that emulates an operating point of the first bipolar transistor and a second replica bipolar transistor that emulates an operating point of the second bipolar transistor.

    Device design for short-circuitry protection circuitry within transistors

    公开(公告)号:US11579645B2

    公开(公告)日:2023-02-14

    申请号:US16448538

    申请日:2019-06-21

    Abstract: A transistor semiconductor die includes a first current terminal, a second current terminal, and a control terminal. A semiconductor structure is between the first current terminal, the second current terminal, and the control terminal and configured such that a resistance between the first current terminal and the second current terminal is based on a control signal provided at the control terminal. Short circuit protection circuitry is coupled between the control terminal and the second current terminal. In a normal mode of operation, the short circuit protection circuitry is configured to provide a voltage drop that is greater than a voltage of the control signal. In a short circuit protection mode of operation, the short circuit protection circuitry is configured to provide a voltage drop that is less than a voltage of the control signal.

    Switching driver circuitry
    7.
    发明授权

    公开(公告)号:US11469753B1

    公开(公告)日:2022-10-11

    申请号:US17365201

    申请日:2021-07-01

    Abstract: A switching driver circuit may have an output stage having an output switch connected between a switching voltage node and an output node. A switch network may control a switching voltage at the switching voltage node so that in one mode the switching voltage node is coupled to a positive voltage and in another mode the switching voltage node is coupled to ground voltage via a first switching path of the switch network. The circuit may also include an n-well switching block operable to, when the first switching voltage node is coupled to a positive voltage, connect the n-well of the first output switch to the switching voltage node, and, when the first switching voltage node is coupled to the ground voltage, connect the n-well of the first output switch to a first ground which is separate to the first switching voltage node and independent of the first switching path.

    APPARATUS WITH HALL SENSOR COMMON MODE VOLTAGE ADJUSTMENT AND APPARATUS WITH LENS MODULE CONTROL

    公开(公告)号:US20220128833A1

    公开(公告)日:2022-04-28

    申请号:US17182305

    申请日:2021-02-23

    Inventor: Yo Sub MOON

    Abstract: An apparatus with hall sensor common mode voltage adjustment includes: a bias provider configured to provide a bias current to the hall sensor; a first voltage regulator configured to vary a first voltage difference between the hall sensor and the bias provider, based on the bias current; and a second voltage regulator configured to vary a second voltage difference between the hall sensor and a ground, based on the bias current. The first and second voltage differences are variable such that a difference between the first voltage difference and the second voltage difference corresponds to a difference between a common mode voltage of first and second hall sensor output terminals of the hall sensor and a reference voltage.

    CURRENT REFERENCE CIRCUIT WITH CURRENT MIRROR DEVICES HAVING DYNAMIC BODY BIASING

    公开(公告)号:US20210286394A1

    公开(公告)日:2021-09-16

    申请号:US16819088

    申请日:2020-03-14

    Abstract: A current reference circuit with one or more current mirror devices having dynamic body biasing includes a voltage-to-current converter circuit having a feedback loop that includes an operational amplifier, an NMOS device, and a resistor to generate a reference current; a current mirror circuit, including one or more current mirror devices with source degeneration, to produce one or more output currents that are copies of the reference current; and a body-biasing stage including an active N-well to dynamically set a body-biasing voltage for the one or more current mirror devices.

    Low Voltage High Precision Power Detect Circuit with Enhanced Power Supply Rejection Ratio

    公开(公告)号:US20210247793A1

    公开(公告)日:2021-08-12

    申请号:US17181950

    申请日:2021-02-22

    Applicant: Apple Inc.

    Abstract: A power detect circuit is disclosed. A power detect circuit includes a voltage multiplier that receives an external supply voltage and generates a second supply voltage that is greater than the former. A voltage regulator is coupled to receive the second supply voltage and outputs a regulated supply voltage. A bandgap circuit is coupled to receive the second supply voltage when a first switch is closed, and the regulated supply voltage when a second switch is closed. The bandgap circuit generates a reference voltage for the voltage regulator, as well as one or more output voltages. A comparator circuit is coupled to receive the one or more output voltages from the bandgap circuit, and may compare these one or more output voltages to the regulated supply voltage.

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