Draining operation for draining dirty cache lines to persistent memory

    公开(公告)号:US12216589B2

    公开(公告)日:2025-02-04

    申请号:US18044499

    申请日:2021-08-16

    Applicant: Arm Limited

    Abstract: An apparatus has processing circuitry with support for transactional memory, and a cache hierarchy comprising at least two levels of cache. In response to a draining trigger event having potential to cause loss of state stored in at least one further level cache beyond a predetermined level cache in which speculative store data generated by a transaction is marked as speculative until the transaction is committed, draining circuitry performs a draining operation to scan a subset of the cache hierarchy to identify dirty cache lines and write data associated with the dirty cache lines to persistent memory. The subset of the cache hierarchy includes the at least one further level cache. In the draining operation, speculative store data marked as speculative in the predetermined level cache is prevented from being drained to the persistent memory.

    CACHING LOOKUP TABLES FOR BLOCK FAMILY ERROR AVOIDANCE

    公开(公告)号:US20240419523A1

    公开(公告)日:2024-12-19

    申请号:US18821283

    申请日:2024-08-30

    Abstract: In some implementations, a memory device may cache a subset of one or more block family error avoidance (BFEA) lookup tables associated with a block family associated with host data in a first memory location. The block family may be based on at least one of a time window during which the host data was written or a temperature window at which the host data was written. The memory device may receive a read command associated with host data and determine, based on the block family and the subset of the one or more BFEA tables, a threshold voltage offset associated with the host data. The memory device may compute a modified threshold voltage by applying the threshold voltage offset to a base read level voltage associated with the host data. The memory device may read, using the modified threshold voltage, the host data from the first memory location.

    STORAGE DEVICE WITH MEMORY CONTROLLER AND METHODS OF OPERATION

    公开(公告)号:US20240403206A1

    公开(公告)日:2024-12-05

    申请号:US18493144

    申请日:2023-10-24

    Applicant: SK hynix Inc.

    Abstract: The present disclosure relates to a storage device capable of receiving early suspend information from an external device (e.g., host) and performing an appropriate operation during a power saving mode for an application installed on the external device, and a method of operating a memory controller of the storage device. The method of operating a memory controller may include: receiving early suspend information from an external device; and controlling a background operation according to the reception of the early suspend information. The background operation refers to an operation that is performed internally regardless of a request from the external device.

    CACHE LINE SUBSCRIPTION
    10.
    发明公开

    公开(公告)号:US20240338323A1

    公开(公告)日:2024-10-10

    申请号:US18295866

    申请日:2023-04-05

    Applicant: Arm Limited

    CPC classification number: G06F12/12 G06F12/0891

    Abstract: An apparatus with an additional storage element or field is provided where a subscription indicator is stored, indicating a subscription to a region of memory, and hence subscribing to a cache line corresponding to the region of memory. In response to a subscribed cache line being invalidated, the apparatus performs actions to re-fetch the cache line, and to store the cache line in the cache after a short delay. The subscription indicator may be stored in a variety of ways, and may include further information that influences the functionality of the present techniques. Such further information may be adjustable in order to dynamically control the functionality of the disclosed techniques for a particular implementation over time.

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