Latch performance detection method, device and electronic device

    公开(公告)号:US12106816B2

    公开(公告)日:2024-10-01

    申请号:US17790472

    申请日:2022-05-09

    发明人: Tao Du Shao Li

    IPC分类号: G11C29/56

    CPC分类号: G11C29/56016 G11C29/56004

    摘要: The present disclosure provide latch performance detecting method and a device. The method includes: extracting circuit structure information of a latch, having a transmission gate and a latch unit, an output terminal of the transmission gate is coupled to the input terminal of the latch unit, and the input terminal is coupled to the output terminal of the drive unit corresponding to the latch; the resistance value of the equivalent resistor of the latch is determined based on the circuit structure information, The first terminal of the equivalent resistor is the output terminal of the driving unit, and the second terminal is the input terminal of the latching unit; based on the resistance value of the equivalent resistor, the latching performance is determined. The embodiments of the present disclosure can accurately detect whether the latch is in a metastable state, which helps to improve the performance of the circuit.

    TECHNIQUE TO ANALYZE AND REPORT ACCURATE DATA, SYNCHRONIZING MULTIPLE SIGNALS IN A MEMORY CHIP

    公开(公告)号:US20240274222A1

    公开(公告)日:2024-08-15

    申请号:US18534495

    申请日:2023-12-08

    申请人: Tektronix, Inc.

    IPC分类号: G11C29/56

    摘要: A test and measurement system includes a multi-stack test subsystem including a plurality of test and measurement instruments, each instrument coupled to a device under test (DUT) to receive a plurality of test signals from the DUT during a test mode of operation. One test and measurement instrument is designated as a master and the remainder are designated as extension test and measurement instruments. The master communicates control signals to each of the extensions to synchronize the test and measurement instruments to simultaneously acquire the plurality of test signals provided by the DUT. An automation engine is coupled to the multi-stack test subsystem to receive the acquired plurality of test signals from the master, and the automation engine analyzes the acquired test signals to perform validation testing for each of plurality of test signals and simultaneously display results of the validation testing for the plurality of test signals.

    Test device and test method thereof

    公开(公告)号:US11961578B2

    公开(公告)日:2024-04-16

    申请号:US17900876

    申请日:2022-09-01

    发明人: Jyun-Da Chen

    IPC分类号: G11C29/56 G06F11/10

    CPC分类号: G11C29/56008 G06F11/1044

    摘要: A memory device includes a data array, a parity array and an ECC circuit. The ECC circuit is coupled to the data array and the parity array. In a first test mode, the ECC function of the ECC circuit is disabled, and in a second test mode, the ECC circuit directly accesses the parity array to read or write parity information through the parity array.

    Reference bits test and repair using memory built-in self-test

    公开(公告)号:US11929136B2

    公开(公告)日:2024-03-12

    申请号:US17906303

    申请日:2021-03-18

    IPC分类号: G11C29/54 G11C29/56

    CPC分类号: G11C29/54 G11C29/56004

    摘要: A memory-testing circuit configured to perform a test of reference bits in a memory. In a read operation, outputs of data bit columns are compared with one or more reference bit columns. The memory-testing circuit comprises: a test controller and association adjustment circuitry configurable by the test controller to associate another one or more reference bit columns or one or more data bit columns with the data bit columns in the read operation. The test controller can determine whether the original one or more reference bit columns have a defect based on results from the two different association.

    ERROR AVOIDANCE BASED ON VOLTAGE DISTRIBUTION PARAMETERS OF BLOCK FAMILIES

    公开(公告)号:US20230012855A1

    公开(公告)日:2023-01-19

    申请号:US17943123

    申请日:2022-09-12

    IPC分类号: G11C29/56 G11C16/26

    摘要: A method can include receiving a request to read data from a block of a memory device, identifying a block family associated with the block of the memory device, identifying a voltage distribution parameter value associated with the block family, wherein the voltage distribution parameter value reflects an aggregate value of a corresponding voltage distribution associated with a plurality of memory cells of the block family, and determining a set of read levels associated with the voltage distribution parameter value, wherein each read level in the set of read levels corresponds to a respective voltage distribution of at least one memory cell comprised by the block of the memory device. The block family can be identified using a data structure that maps block identifiers to corresponding block family identifiers. The voltage distribution parameter value can be identified using a data structure that maps block family identifiers to corresponding voltage parameter values.

    Semiconductor memory device, method of testing the same and test system

    公开(公告)号:US11501846B2

    公开(公告)日:2022-11-15

    申请号:US17239651

    申请日:2021-04-25

    IPC分类号: G11C29/56

    摘要: A semiconductor memory device included in each of a plurality of chips which are divided by a scribe lane and formed on an upper surface of a wafer, includes a memory core and a built-in self test (BIST) circuit. The memory core includes a memory cell array that stores data and a data input/output circuit connected to a data input/output pad. The BIST circuit is connected to a test pad that is separate from the data input/output pad. The BIST circuit generates test pattern data including first parallel bits based on commands and addresses received from an external automatic test equipment (ATE) during a wafer level test process performed on the semiconductor memory device. The BIST circuit tests the memory core by applying the test pattern data to the memory cell array through the data input/output circuit.

    Error avoidance based on voltage distribution parameters of block families

    公开(公告)号:US11443830B1

    公开(公告)日:2022-09-13

    申请号:US17217780

    申请日:2021-03-30

    IPC分类号: G11C29/56 G11C16/26

    摘要: A method can include receiving a request to read data from a block of a memory device coupled with a processing device, determining, using a first data structure mapping block identifiers to corresponding block family identifiers, a block family associated with the block of the memory device, determining, using a second data structure mapping block family identifiers to corresponding voltage distribution parameter values, a voltage distribution parameter value associated with the block family, determining a set of read levels associated with the voltage distribution parameter value, wherein each read level in the set of read levels corresponds to a respective voltage distribution of at least one memory cell comprised by the block of the memory device, and reading, using the determined set of read levels, data from the block of the memory device.