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    Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames
    1.
    发明授权
    Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames 有权
    用于有源微电子器件的耗散隔离框架，以及制造这种耗散隔离框架的方法

    公开(公告)号：US07170147B2

    公开(公告)日：2007-01-30

    申请号：US10628748

    申请日：2003-07-28

    申请人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Nils Guenter Weimann

    发明人： Young-Kai Chen ,  Vincent Etienne Houtsma ,  Nils Guenter Weimann

    IPC分类号： H00L23/552 ,  G00R21/26 ,  H00B11/02

    CPC分类号： H01L23/544 ,  H01L23/552 ,  H01L23/66 ,  H01L2223/54473 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  Y10S438/953 ,  H01L2924/00

    摘要： Microelectronic apparatus having protection against high frequency crosstalk radiation, comprising: a planar insulating substrate; an active semiconductor electronic device located over a first region of the insulating substrate; and a doped semiconductor located in a second region of the insulating substrate substantially surrounding the first region. Apparatus further comprising a dissipative conductor overlaying and adjacent to the doped semiconductor. Apparatus additionally comprising metallic test probe contacts making electrical connections with the active semiconductor electronic device. Application of the apparatus to dissipate crosstalk radiation having a center frequency within a range between about 1 gigahertz and about 1,000 gigahertz. Methods for making the apparatus.

    摘要翻译： 具有防止高频串扰辐射的微电子装置，包括：平面绝缘基板; 位于所述绝缘基板的第一区域上方的有源半导体电子器件; 以及位于所述绝缘基板的第二区域中的基本上围绕所述第一区域的掺杂半导体。 装置还包括覆盖并邻近掺杂半导体的耗散导体。 装置还包括与有源半导体电子器件进行电连接的金属测试探针触点。 该装置用于消散中心频率在约1千兆赫和约1,000千兆赫之间范围内的串扰辐射。 制造装置的方法。