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1.发明申请公开(公告)号：US20210166908A1
公开(公告)日：2021-06-03
申请号：US17146515
申请日：2021-01-12
发明人： Joshua T. Smith , Benjamin Wunsch
IPC分类号： H01J21/10 , H01J1/304 , H01L21/3215 , H01L29/417
摘要： A technique relates to a semiconductor device. An emitter electrode and a collector electrode are formed in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode including layers. A channel is formed in the dielectric layer so as to traverse the nanogap. A top layer is formed over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure.
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公开(公告)号：US10943758B2
公开(公告)日：2021-03-09
申请号：US16449142
申请日：2019-06-21
发明人： Arlynn W. Smith , Dan Chilcott
摘要： A light intensifier includes a semiconductor structure to multiply electrons and block stray particles. A thin gain substrate layer includes an electron multiplier region that is doped to generate a plurality of electrons for each electron that impinges on an input surface of the gain substrate layer and blocking structures that are doped to direct the plurality of electrons towards emission areas of an emission surface of the gain substrate layer. Respective ribs of a first plurality of ribs on the input surface of the gain substrate layer are vertically aligned with respective blocking structures, and respective blocking structures are vertically aligned with respective ribs of a second plurality of ribs at the emission surface. This alignment directs electrons along a path through the gain substrate layer to reduce noise. The support ribs provide mechanical strength to the gain substrate layer, improving robustness of the light intensifier while minimizing noise.
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3.发明授权公开(公告)号：US10937620B2
公开(公告)日：2021-03-02
申请号：US16142208
申请日：2018-09-26
发明人： Joshua T. Smith , Benjamin Wunsch
IPC分类号： H01L21/00 , H01J21/10 , H01J1/304 , H01L21/3215 , H01L29/417
摘要： A technique relates to a semiconductor device. An emitter electrode and a collector electrode are formed in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode including layers. A channel is formed in the dielectric layer so as to traverse the nanogap. A top layer is formed over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure.
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公开(公告)号：US20200350136A1
公开(公告)日：2020-11-05
申请号：US16402302
申请日：2019-05-03
发明人： Injo Ok , Choonghyun Lee , Soon-Cheon Seo , Seyoung Kim
摘要： A vertical vacuum transistor with a sharp tip structure, and associated fabrication process, is provided that is compatible with current vertical CMOS fabrication processing. The resulting vertical vacuum channel transistor advantageously provides improved operational characteristics including a higher operating frequency, a higher power output, and a higher operating temperature while at the same time providing a higher density of vertical transistor devices during the manufacturing process.
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5.发明申请公开(公告)号：US20200098534A1
公开(公告)日：2020-03-26
申请号：US16142208
申请日：2018-09-26
发明人： Joshua T. Smith , Benjamin Wunsch
IPC分类号： H01J21/10 , H01J1/304 , H01L29/417 , H01L21/3215
摘要： A technique relates to a semiconductor device. An emitter electrode and a collector electrode are formed in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode including layers. A channel is formed in the dielectric layer so as to traverse the nanogap. A top layer is formed over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure.
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公开(公告)号：US10062857B2
公开(公告)日：2018-08-28
申请号：US15594233
申请日：2017-05-12
发明人： Qing Cao , Kangguo Cheng , Zhengwen Li , Fei Liu
CPC分类号： H01L51/0562 , H01J21/105 , H01L29/0673 , H01L51/0017 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0558
摘要： Vacuum transistors with carbon nanotube as the collector and/or emitter electrodes are provided. In one aspect, a method for forming a vacuum transistor includes the steps of: covering a substrate with an insulating layer; forming a back gate(s) in the insulating layer; depositing a gate dielectric over the back gate; forming a carbon nanotube layer on the gate dielectric; patterning the carbon nanotube layer to provide first/second portions thereof over first/second sides of the back gate, separated from one another by a gap G, which serve as emitter and collector electrodes; forming a vacuum channel in the gate dielectric; and forming metal contacts to the emitter and collector electrodes. Vacuum transistors are also provided.
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公开(公告)号：US09953796B2
公开(公告)日：2018-04-24
申请号：US15098108
申请日：2016-04-13
发明人： Biqin Huang , Christopher S. Roper , Tahir Hussain
摘要： A semiconductor power handling device, includes a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode by a nano-vacuum gap. An array of semiconductor power handling devices, each comprising a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode pillar by a nano-vacuum gap. The semiconductor power handling devices can be arranged as rows and columns and can be interconnected to meet the requirements of various applications. The array of power handling devices can be fabricated on a single substrate.
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公开(公告)号：US09905389B2
公开(公告)日：2018-02-27
申请号：US15675835
申请日：2017-08-14
IPC分类号： H01J19/04 , H01J21/10 , H01J21/04 , B29C64/188 , H01J19/08 , B05D1/26 , B05D1/36 , B33Y80/00 , B33Y10/00 , B33Y30/00
CPC分类号： H01J19/04 , B05D1/265 , B05D1/36 , B29C64/00 , B29C64/188 , B33Y10/00 , B33Y30/00 , B33Y80/00 , H01J19/08 , H01J21/04 , H01J21/10
摘要： A method of manufacturing an article with integral active electronic component includes using an additive manufacturing process to: a) form a non-electrically conductive substrate; b) form a non-electrically conductive perforated layer having an aperture; c) form electrically conductive anode and cathode elements spaced in the aperture; d) deposit a conductive electrical connection to each of the elements suitable for imparting an electrical potential difference between the elements; and e) form a non-electrically conductive sealing layer atop the perforated layer so as to retain and seal the aperture in the perforated layer.
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公开(公告)号：US09711287B2
公开(公告)日：2017-07-18
申请号：US14658794
申请日：2015-03-16
发明人： Curtis A Birnbach
IPC分类号： H01J9/04 , H01J35/06 , H01J35/08 , H01J35/16 , H01J21/10 , H05G1/22 , H01G4/35 , G05F1/10 , H01J5/02 , H01J7/16 , H01J19/82 , H02H9/02 , H02H3/08 , H02H9/08 , H01J19/24
CPC分类号： H01G4/35 , G05F1/10 , H01J5/02 , H01J7/16 , H01J19/24 , H01J19/42 , H01J19/54 , H01J19/70 , H01J19/82 , H01J21/10 , H02H3/08 , H02H9/02 , H02H9/08
摘要： A high voltage, high current vacuum integrated circuit includes a common vacuum enclosure that includes at least two cold-cathode field emission electron tubes, and contains at least one internal vacuum pumping means, at least one exhaust tubulation, vacuum-sealed electrically-insulated feedthroughs, and internal electrical insulation. The cold-cathode field emission electron tubes are configured to operate at high voltage and high current and interconnected with each other to implement a circuit function.
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公开(公告)号：US09589758B2
公开(公告)日：2017-03-07
申请号：US15000392
申请日：2016-01-19
发明人： Kazunori Tatsuda , Tadami Maeda , Misa Yamanaka
摘要： An object of the present invention is to provide a vacuum tube with a structure close to that of an inexpensive and easily available vacuum fluorescent display which easily operates as an analog amplifier. A vacuum tube subject to the present invention comprises: a filament which is tensioned linearly and emits thermoelectrons, an anode arranged parallel to the filament, and a grid arranged between the filament and the anode such that the grid faces the anode. The present invention is characterized in that a distance between the filament and the grid is between 0.2 mm and 0.6 mm, including 0.2 mm and 0.6 mm.
摘要翻译： 本发明的一个目的是提供一种具有接近于便于操作的模拟放大器的便宜且容易获得的真空荧光显示器的结构的真空管。 根据本发明的真空管包括：线状拉伸并发射热电子的细丝，平行于灯丝布置的阳极和布置在灯丝和阳极之间的格栅，使得栅格面向阳极。 本发明的特征在于，细丝与网格之间的距离在0.2mm至0.6mm之间，包括0.2mm和0.6mm。
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