利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

2088 条记录 (耗时 0.028 秒)

    INSULATOR FOR AN ION IMPLANTATION SOURCE
    2.
    发明公开
    INSULATOR FOR AN ION IMPLANTATION SOURCE 审中-公开

    公开(公告)号：US20240274405A1

    公开(公告)日：2024-08-15

    申请号：US18647325

    申请日：2024-04-26

    申请人： Taiwan Semiconductor Manufacturing Comapny, Ltd.

    发明人： Tsung-Min LIN ,  Sheng-Chi LIN ,  Jui-Feng JAO ,  Fang-Chi CHIEN ,  Lung-Yin TANG

    IPC分类号： H01J37/317 ,  H01J37/08

    CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J2237/038

    摘要： An insulator for an ion implantation source may provide electrical insulation between high voltage components and relatively lower voltage components of the ion implantation source. To reduce the likelihood of and/or prevent a leakage path forming along the insulator, the insulator may include an internal cavity having a back and forth pattern. The back and forth pattern of the internal cavity increases the mean free path of gas molecules in the ion implantation source and increases the surface area of the insulator that is not directly or outwardly exposed to the gas molecules. This results in a continuous film or coating being more difficult and/or less likely to form along the insulator, which extends the working time of the ion implantation source.

    Insulator for an ion implantation source
    5.
    发明授权
    Insulator for an ion implantation source 有权

    公开(公告)号：US12020896B2

    公开(公告)日：2024-06-25

    申请号：US16947430

    申请日：2020-07-31

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Tsung-Min Lin ,  Sheng-Chi Lin ,  Jui-Feng Jao ,  Fang-Chi Chien ,  Lung-Yin Tang

    IPC分类号： H01J37/317 ,  H01J37/08

    CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J2237/038

    摘要： An insulator for an ion implantation source may provide electrical insulation between high voltage components and relatively lower voltage components of the ion implantation source. To reduce the likelihood of and/or prevent a leakage path forming along the insulator, the insulator may include an internal cavity having a back and forth pattern. The back and forth pattern of the internal cavity increases the mean free path of gas molecules in the ion implantation source and increases the surface area of the insulator that is not directly or outwardly exposed to the gas molecules. This results in a continuous film or coating being more difficult and/or less likely to form along the insulator, which extends the working time of the ion implantation source.

    Ion Milling Device
    7.
    发明公开
    Ion Milling Device 审中-公开

    公开(公告)号：US20240120174A1

    公开(公告)日：2024-04-11

    申请号：US18273325

    申请日：2021-01-22

    申请人： Hitachi High-Tech Corporation

    发明人： Shota AIDA ,  Hisayuki TAKASU ,  Atsushi KAMINO ,  Hitoshi KAMOSHIDA

    IPC分类号： H01J37/305 ,  H01J37/08 ,  H01J37/24

    CPC分类号： H01J37/3056 ,  H01J37/08 ,  H01J37/243

    摘要： In order to improve the processing reproducibility, an ion milling device 100 includes a sample chamber 107, a sample stage 102 that is disposed in the sample chamber on which a sample is placed, an ion source 101 that emits an unfocused ion beam toward the sample, a control unit 112 that controls an output of the ion beam, an oscillator 104 that is disposed in the sample chamber, and an oscillation circuit 111 that oscillates the oscillator and outputs an oscillation signal to the control unit, in which the control unit controls the output of the ion beam such that a vibrational frequency change amount of the oscillator per unit time due to deposition of sputtered particles generated by irradiating the sample with the ion beam on the oscillator is kept within a predetermined range.

    Ion beam irradiation apparatus and program therefor
    8.
    发明授权
    Ion beam irradiation apparatus and program therefor 有权

    公开(公告)号：US11955311B2

    公开(公告)日：2024-04-09

    申请号：US17835875

    申请日：2022-06-08

    申请人： NISSIN ION EQUIPMENT CO., LTD.

    发明人： Shinya Takemura

    IPC分类号： H01J37/08 ,  G06N20/00 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317

    CPC分类号： H01J37/3056 ,  G06N20/00 ,  H01J37/08 ,  H01J37/304 ,  H01J37/3171

    摘要： An ion beam irradiation apparatus includes modules for generating an ion beam according to a recipe, and a control device. The control device receives the recipe including a processing condition for new processing, reads, from a monitored value storage, a monitored value that indicates a state of a module during a last processing immediately before the new processing, inputs the processing condition and the monitored value to a trained machine learning algorithm and receives, as an output from the trained machine learning algorithm, an initial value for the module, and outputs the initial value to the module to set up the module for generating the ion beam.