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    Scanning Electron Microscope
    3.
    发明申请
    Scanning Electron Microscope 有权

    公开(公告)号：US20220415609A1

    公开(公告)日：2022-12-29

    申请号：US17778320

    申请日：2019-11-21

    申请人： Hitachi High-Tech Corporation

    发明人： Takumi UEZONO ,  Tadanobu TOBA ,  Hironori ITABASHI ,  Masato KAMIO

    IPC分类号： H01J37/26 ,  H01J37/285

    摘要： A scanning electron microscope includes a management computer that generates an irradiation control command of an electron beam, a control block that generates a control signal on the basis of the irradiation control command, and a beam irradiation control device that controls an irradiation direction of the electron beam on the basis of the control signal. The management computer generates the irradiation control command on the basis of a scan type selected by a user and scan parameters set by the use

    ATOM PROBE TOMOGRAPHY SPECIMEN PREPARATION
    4.
    发明申请
    ATOM PROBE TOMOGRAPHY SPECIMEN PREPARATION 有权

    公开(公告)号：US20220059318A1

    公开(公告)日：2022-02-24

    申请号：US16997801

    申请日：2020-08-19

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Shih-Wei HUNG ,  Jang Jung LEE

    IPC分类号： H01J37/285 ,  H01L21/66

    摘要： The disclosure is directed to techniques in preparing an atom probe tomography (“APT”) specimen. The disclosed techniques form an APT specimen or sample directly on a DUT region on a wafer. The APT specimen is formed integrally to the substrate or the support structure, e.g., a carrier, under the APT specimen. A laser patterning is conducted to form a trench in the DUT and one or more bump structures in the trench. The laser patterning is relatively coarse and forms a coarse surface texture on each of the bump structures. A low-kV gas ion milling using a dual-beam focused ion beam (“FIB”) microscopes is then conducted to shape the bump structures into APT specimen.

    Method of imaging a 3D sample with a multi-beam particle microscope
    7.
    发明授权
    Method of imaging a 3D sample with a multi-beam particle microscope 有权

    公开(公告)号：US11069508B2

    公开(公告)日：2021-07-20

    申请号：US16734741

    申请日：2020-01-06

    申请人： Carl Zeiss MultiSEM GmbH

    发明人： Dirk Zeidler ,  Anna Lena Eberle

    IPC分类号： H01J37/285 ,  H01J37/244 ,  H01J37/28

    摘要： A fast method of imaging a 3D sample with a multi-beam particle microscope includes the following steps: providing a layer of the 3D sample; determining a feature size of features included in the layer; determining a pixel size based on the determined feature size in the layer; determining a beam pitch size between individual beams in the layer based on the determined pixel size; and imaging the layer of the 3D sample with a setting of the multi-beam particle microscope based on the determined pixel size and based on the determined beam pitch size.

    Correlation between Emission Spots Utilizing CAD Data in Combination with Emission Microscope Images
    8.
    发明申请
    Correlation between Emission Spots Utilizing CAD Data in Combination with Emission Microscope Images 有权

    公开(公告)号：US20210199714A1

    公开(公告)日：2021-07-01

    申请号：US17135240

    申请日：2020-12-28

    申请人： Synopsys, Inc.

    发明人： Ankush Bharati OBERAI ,  Rupa Sunil KAMOJI

    IPC分类号： G01R31/311 ,  G01N23/2255 ,  H01J37/285

    摘要： A method includes capturing a photon emission microscope (PEM) image of an integrated circuit (IC), and identifying emission sites in the PEM image, where the emission sites are associated with a leakage current. A set of common nets is found that connects multiple emission sites using layout data and/or netlist data in computer-aided design (CAD) data. From the layout data and/or netlist data, a critical net is identified from the set of common nets connecting a threshold number of emission sites. The critical net is cross-mapped, by a processor, tip netlist data in the CAD data. A particular device is identified from the netlist data that has an output pin connected to the critical net. The particular device identified from the netlist data is cross-mapped, by a processor, to the layout data, wherein the critical net connects at least two devices at the identified emission sites including the particular device.