公开(公告)号：US11869757B2

公开(公告)日：2024-01-09

申请号：US17616831

申请日：2020-06-05

Applicant: ADAPTAS SOLUTIONS PTY LTD

Inventor： Russell Jurek ,  Kevin Hunter ,  Antony Jones ,  Aditya Wakhle

IPC: H01J43/10 ,  H01J43/02 ,  H01J1/32 ,  H01J43/24 ,  H01J43/28 ,  G01T1/28 ,  H01J49/02 ,  H01J49/26

CPC classification number: H01J43/10 ,  H01J43/02 ,  H01J43/28 ,  G01T1/28 ,  H01J49/025 ,  H01J49/26

Abstract: Ion detectors of the type used in scientific instrumentation, such as mass spectrometers. More particularly, a self-contained particle detector includes an enclosure formed in part by a transmission mode secondary electron emissive element, the enclosure defining an internal environment and an external environment, wherein the transmission mode secondary electron emissive element has an externally facing surface and an internally facing surface and is configured such that impact of a particle on the externally facing surface causes emission of one or more secondary electrons from the internally facing surface.

公开(公告)号：US20210175043A1

公开(公告)日：2021-06-10

申请号：US16754802

申请日：2018-08-29

Applicant: ADAPTAS SOLUTIONS PTY LTD

Inventor： Wayne Sheils ,  Toby Shanley

IPC: H01J9/00 ,  H01J43/10 ,  B08B7/00

Abstract: Components of scientific analytical equipment, and particularly to methods for extending the operational lifetime or otherwise improving the performance of dynodes used in electron multipliers. The method includes: (i) increasing the secondary electron yield of a dynode and/or (ii) decreasing the rate of degradation of electron yield of a dynode, by exposing a dynode electron-emissive surface to an electron flux under conditions causing electron-impact induced removal of a contaminant deposited on the dynode electron-emissive surface. The conditions may be selected such that the electron-mediated removal is enhanced relative to a contaminant deposition process so as to provide a net decrease in the rate of contaminant deposition and/or a decrease in the amount of contaminant present on the dynode electron-emissive surface.

公开(公告)号：US10262846B2

公开(公告)日：2019-04-16

申请号：US15748022

申请日：2016-07-14

Applicant: ETP ION DETECT PTY LTD

Inventor： Richard Stresau

IPC: H01J43/10 ,  H01J43/14

Abstract: An apparatus for generating and focusing electrons is provided. The apparatus has an emissive material configured to emit an electron, an electron target, and an electrical potential gradient generator configured to generate an electrical potential gradient within the emissive material. The electrical potential gradient is oriented so as to vary from positive to negative in the general direction toward the electron target. In operation, an electron emitted from the emissive materials is deflected away from the emissive material and generally toward the electron target. The apparatus may be incorporated in scientific analytical equipment such as an electron multiplier.

公开(公告)号：US08587196B2

公开(公告)日：2013-11-19

申请号：US12904661

申请日：2010-10-14

Applicant: Hideki Shimoi ,  Hiroyuki Kyushima

Inventor： Hideki Shimoi ,  Hiroyuki Kyushima

IPC: H01J43/10

CPC classification number: H01J43/28 ,  H01J43/22

Abstract: The photomultiplier tube 1 is provided with a casing 5 made of an upper frame 2 and a lower frame 4, an electron multiplying part 33 having dynodes 33a to 331 arrayed on the lower frame 4, a photocathode 41, and an anode part 34. Conductive layers 202 are installed on an opposing surface 20a of the upper frame 2. The electron multiplying part 33 is provided with base parts 52a to 52d of the respective dynodes 33a to 33d installed on the side of the lower frame 4, and power supplying parts 53a to 53d connected to the conductive layers 202 at one end parts of the respective base parts 52a to 52d in a direction along the opposing surface 40a. The base parts 52a to 52d are constituted in such a manner that the both end parts are joined to the opposing surface 40a, the central part is spaced away from the opposing surface 40a, and a cross sectional area at the one end part on the side of each of the power supplying parts 53a to 53d is made greater than a cross sectional area at another end part.

Abstract translation: 光电倍增管1设置有由上框架2和下框架4制成的壳体5，具有排列在下框架4上的倍增电极33a至331的电子倍增部件33，光电阴极41和阳极部分34。导电 层202安装在上框架2的相对表面20a上。电子倍增部33设置有安装在下框架4一侧的各个倍增电极33a〜33d的基部52a〜52d，以及供电部53a 至53d，沿着相对表面40a的方向连接到各个基部52a至52d的一个端部处的导电层202。 基部52a〜52d构成为两端部与相对面40a连结，中央部与相对面40a间隔开，侧面一端部的横截面积 每个供电部分53a至53d被制成大于另一端部处的横截面面积。

公开(公告)号：US20130033175A1

公开(公告)日：2013-02-07

申请号：US13484663

申请日：2012-05-31

Applicant: Hideki SHIMOI ,  Hiroyuki Kyushima ,  Keisuke Inoue

Inventor： Hideki SHIMOI ,  Hiroyuki Kyushima ,  Keisuke Inoue

IPC: H01J43/10

CPC classification number: H01J43/22

Abstract: The present invention relates to an electron multiplier and others to effectively suppress luminescence noise, even in compact size, in which each of multistage dynodes has a plurality of columns each having a peripheral surface separated physically, and in which each column is processed in such a shape that an area or a peripheral length of a section parallel to an installation surface on which the electron multiplier is arranged becomes minimum at a certain position on the peripheral surface in the column of interest.

Abstract translation: 本发明涉及一种电子倍增器及其它有效抑制发光噪声的方法，即使在紧凑的尺寸下，多级倍增电极中的每一个具有多个柱体，每一列具有在物理上分离的外围表面，并且其中每列处理 形成与感兴趣的列的外周表面上的特定位置处平行于其上布置有电子倍增器的安装表面的部分的面积或周长的最小值。

公开(公告)号：US5624706A

公开(公告)日：1997-04-29

申请号：US440754

申请日：1995-05-15

Applicant: Samuel Goukassian

Inventor： Samuel Goukassian

IPC: C23C14/06 ,  C23C14/24 ,  C23C14/50 ,  H01J9/12 ,  H01J43/10 ,  H01J43/24 ,  B05D5/12

CPC classification number: H01J43/246 ,  C23C14/06 ,  C23C14/24 ,  C23C14/505 ,  H01J43/10 ,  H01J9/125 ,  H01J2201/32

Abstract: A method for fabricating an electron multiplier is provided. The method consists of depositing a random channel layer on a substrate such that the random channel layer is capable of producing a cascade secondary electron emission in response to an incident electron in the presence of an electric field.

Abstract translation: 提供一种制造电子倍增器的方法。 该方法包括在衬底上沉积随机沟道层，使得随机沟道层能够在存在电场的情况下响应于入射电子产生级联二次电子发射。

公开(公告)号：US5552595A

公开(公告)日：1996-09-03

申请号：US404553

申请日：1995-03-15

Applicant: Hirofumi Namatame ,  Masaki Taniguchi

Inventor： Hirofumi Namatame ,  Masaki Taniguchi

IPC: G01N23/227 ,  G01J1/02 ,  G01J1/04 ,  G01J1/42 ,  G01N21/62 ,  H01J43/10 ,  G01N21/00 ,  G02F1/01 ,  H01L31/10

CPC classification number: G01J1/429 ,  H01J43/10

Abstract: A narrow band high sensitivity photo-detector for inverse photoemission spectroscopy, in which an electron beam from an electron gun is applied onto a sample and a light reflected therefrom is converged into a photo-electron detector, so as to effect photo-electron detection in a photo-electron multiplier, wherein said photo-electron detector comprises a CaF.sub.2 monocrystal window provided with a KCl thin film in the front of said photo-electron detector, a first dynode deposited with a KCl thin film on a surface thereof, wherein an output of the photo-electron multiplier is applied with a pulse counter circuit through an amplifier, so as to measure light absorption properties, window transmissibility and detection sensitivity as a band pass filter.

Abstract translation: 一种用于逆光电子发射光谱的窄带高灵敏度光检测器，其中将来自电子枪的电子束施加到样品上，并将从其反射的光会聚在光电子检测器中，以便实现光电子检测 光电子倍增器，其中所述光电子检测器包括在所述光电子检测器的前面设置有KCl薄膜的CaF 2单晶窗口，在其表面上沉积有KCl薄膜的第一倍增电极，其中输出 通过放大器施加脉冲计数器电路，以便测量作为带通滤波器的光吸收特性，窗口传输率和检测灵敏度。

公开(公告)号：US5481158A

公开(公告)日：1996-01-02

申请号：US148280

申请日：1993-11-08

Applicant: Hisaki Kato ,  Suenori Kimura ,  Kiyoshi Nakatsugawa ,  Tsuguo Uchino ,  Itsuo Ozawa ,  Hiroyuki Onda

Inventor： Hisaki Kato ,  Suenori Kimura ,  Kiyoshi Nakatsugawa ,  Tsuguo Uchino ,  Itsuo Ozawa ,  Hiroyuki Onda

IPC: H01J43/04 ,  H01J43/18 ,  H01J43/10

CPC classification number: H01J43/045 ,  H01J43/18

Abstract: The present invention relates to a linear multi-anode photomultiplier or electron multiplier on which a plurality of light beams to be measured or energy beams of electrons, ions and so forth are incident one-dimensionally. The object of the present invention is to prevent crosstalk between dynode arrays caused by leaking electrons. A transmission type photomultiplier is characterized in that the direction of secondary electron emission of the first-stage dynode of each dynode array is set in the opposite direction at 180.degree. from that of an adjacent dynode array. Then, adjacent dynode arrays will not oppose each other but are shifted from each other at a predetermined distance in the lateral direction. Accordingly, even if electrons leak from a gap between dynodes of a certain dynode array, the leaking electrons will not enter the adjacent dynode array, thereby preventing crosstalk.

Abstract translation: 本发明涉及一种线性多阳极光电倍增管或电子倍增器，其中待测量的多个光束或电子，离子等的能量束一维地入射。 本发明的目的是防止由电子泄漏引起的多极阵列之间的串扰。 透射型光电倍增管的特征在于，将每个倍增电极阵列的第一级倍增电极的二次电子发射方向设定为与相邻的倍增极阵列的方向相反的方向为180°。 然后，相邻的倍增电极阵列不会彼此相对，而是在横向上以预定距离彼此偏移。 因此，即使电子从某个倍增电极阵列的倍增电极之间的间隙泄漏，泄漏的电子将不会进入相邻的倍增极阵列，从而防止串扰。

公开(公告)号：US5440115A

公开(公告)日：1995-08-08

申请号：US222811

申请日：1994-04-05

Applicant: Anthony S. Bauco ,  Alan M. Then

Inventor： Anthony S. Bauco ,  Alan M. Then

IPC: H01J43/30 ,  H01J43/10

CPC classification number: H01J43/30

Abstract: The invention employs a reverse biased zener diode in the output circuit of a single stage or multistage electron multiplier. In a multistage device, a bypass resistor is employed between stages for increasing the bias current in downstream stages which operates at reduced potential whereby power dissipation is minimized.

Abstract translation: 本发明在单级或多级电子倍增器的输出电路中采用反向偏置齐纳二极管。 在多级装置中，在级之间采用旁路电阻器，用于增加在下降级中的偏置电流，其在降低的电势下工作，从而使功耗最小化。

公开(公告)号：US4188560A

公开(公告)日：1980-02-12

申请号：US936911

申请日：1978-08-25

Applicant: Donald L. Swingler

Inventor： Donald L. Swingler

IPC: G06G7/16 ,  H01J43/18 ,  H01J43/10

CPC classification number: H01J43/18

Abstract: Electron Multiplier in which the charge current is conformed by an electrostatic field to pass in alternating fashion between successive dynode surfaces of two opposed rows, the dynodes of one row being on outer surfaces of coaxial cylindrical elements and the dynodes of the other row being on inner surfaces of surrounding annular elements.

Abstract translation: 电荷倍增器，其中充电电流由静电场一致以在两个相对的行的相继的倍增极表面之间交替地传递，一行的倍增电极在同轴圆柱形元件的外表面上，另一排的倍增电极在内部 周围环形元件的表面。