-
公开(公告)号：US20220344121A1
公开(公告)日：2022-10-27
申请号：US17238763
申请日：2021-04-23
Applicant: OXFORD INSTRUMENTS X-RAY TECHNOLOGY INC.
Inventor： Christopher K. McKenzie , Yahya Alivov , Mark Patton
Abstract: An anode for an X-ray tube is provided. The anode has a shape configured such that, in use: an electron beam impinges upon the anode at a focal spot on the surface of the anode, and the anode is heated by the electron beam from a first state to a predetermined second state and undergoes resulting thermal expansion causing a change in the location of the focal spot on the surface of the anode, wherein the configured shape of the anode is such that the spatial position of the focal spot with respect to the X-ray tube is substantially the same for the first state and the second state. A method of producing an anode for an X-ray tube is also provided.
-
公开(公告)号：US10304650B2
公开(公告)日：2019-05-28
申请号：US15919959
申请日：2018-03-13
Applicant: Honeywell International Inc.
Inventor： Daniel Youngner
Abstract: Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.
-
公开(公告)号：US09991082B2
公开(公告)日：2018-06-05
申请号：US15631113
申请日：2017-06-23
Inventor： Deyuan Xiao
Abstract: A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hollow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.
-
公开(公告)号：US09934931B2
公开(公告)日：2018-04-03
申请号：US14903805
申请日：2014-06-20
Applicant: KONINKLIJKE PHILIPS N.V.
Inventor： Christoph Helmut Bathe , Ulrich Hermann Hove
CPC classification number: H01J35/101 , H01J9/148 , H01J2235/1006 , H01J2235/1013 , H01J2235/1046
Abstract: The present invention relates to mounting of an anode disk. In order to provide a mount of an anode disk to a rotating shaft that is suitable for increased thermal loads on the anode disk, a rotating anode assembly (10) is provided that comprises an anode disk (12), a rotating shaft (14), and an anode disk support (16). The anode disk is concentrically mounted to a rotating axis (18) of the rotating shaft via the anode disk support, and the anode disk support comprises a first support (20) with a first circular axial support surface (22) that is provided at the rotating shaft in a concentric manner with the rotating axis. Further, the anode disk support comprises a second support (24) with a second axial support surface (26) that is at least temporarily attached to the rotating shaft for urging the anode disk against the first support surface in an axial clamping direction. Still further, the first support is provided as a radially flexible support (28). Upon heating up of the anode disk during X-ray generation, and a thermal expansion of the anode disk, the radially flexible support bends (32) radially such that the first axial support surface at least partly follows the thermal expansion in a radial direction.
-
公开(公告)号：US09715987B2
公开(公告)日：2017-07-25
申请号：US14558050
申请日：2014-12-02
Inventor： Deyuan Xiao
Abstract: A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hollow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.
-
Patent Agency Ranking
公开(公告)号：US09558908B2
公开(公告)日：2017-01-31
申请号：US14700312
申请日：2015-04-30
Applicant: Honeywell International Inc.
Inventor： Daniel Youngner
CPC classification number: H01J3/38 , B82Y10/00 , G06N99/002 , G21K1/00 , H01J9/14 , H01J49/0018 , H01L29/945
Abstract: Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.
Abstract translation: 本文描述了用于离子阱的装置，系统和方法。 一种装置包括多个微波（MW）导轨和形成有基本上平行的纵向轴线并具有基本上共面的上表面的多个射频（RF）导轨。 该装置包括直流（DC）电极的两个序列，每个序列形成为基本上平行于MW轨道和RF轨道的基本平行的纵向轴线延伸。 该装置还包括通过离子阱的衬底形成的多个穿硅通孔（TSV）和形成在基板周围的至少一个TSV的沟槽电容器。
-
公开(公告)号：US20150325400A1
公开(公告)日：2015-11-12
申请号：US14693908
申请日：2015-04-23
Applicant: incoatec GmbH
Inventor： Karl Hans
CPC classification number: H01J35/12 , H01J9/14 , H01J9/24 , H01J35/16 , H01J2235/0233
Abstract: A high voltage vacuum feed through (23) for an electron tube (25) has an anode (28) and an insulating body (1) of ceramic material, the insulating body (1) having a continuous hollow space (10). The anode (28) has a rear part (2) and a front part (3) mounted thereto. The rear part (2) consists of a first metallic material, having a thermal expansion coefficient corresponding to a thermal expansion coefficient of the ceramic material. The rear part (2) is arranged in the hollow space (10) of the insulating body (1) and is soldered into the insulating body (1) in a vacuum-tight fashion. The front part (3) has a second metallic material whose heat conductivity is larger than that of the first metallic material. The high voltage vacuum feed through reliably remains vacuum-tight during operation and can be easily provided with different target materials.
Abstract translation: 绝缘体（1）具有连续的中空空间（10），用于电子管（25）的高压真空馈电（23）具有阳极（28）和绝缘体（1）。 阳极（28）具有安装在其上的后部（2）和前部（3）。 后部（2）由具有对应于陶瓷材料的热膨胀系数的热膨胀系数的第一金属材料构成。 后部（2）布置在绝缘体（1）的中空空间（10）中，并且以真空密封的方式被焊接到绝缘体（1）中。 前部（3）具有第二金属材料，其导热率大于第一金属材料的导热率。 高压真空进料在运行中可靠地保持真空密封，并且可以容易地提供不同的目标材料。
-
8.发明授权Image intensifier having an ion barrier with conductive material and method for making the same 有权具有导电材料的离子屏障的图像增强器及其制造方法公开(公告)号：US09177764B1
公开(公告)日：2015-11-03
申请号：US14076371
申请日：2013-11-11
Applicant: EXELIS, INC.
Inventor： William J. Baney
CPC classification number: H01J43/04 , H01J9/14 , H01J31/507
Abstract: An image intensifier tube includes a collimator having multiple channels for receiving electrons from a photocathode layer, and a microchannel plate (MCP) having multiple channels for receiving electrons from the collimator. An ion barrier film (IBF) is disposed on top of an input side of the MCP, in which the IBF includes a small amount of conductive material. The IBF may include alumina doped with chromium oxide, or manganese oxide, or any other conductive material. The small amount of conductive material includes 1% to 5% of conductive material in a layer of non-conductive material.
Abstract translation: 图像增强管包括具有用于从光电阴极层接收电子的多个通道的准直器和具有用于从准直器接收电子的多个通道的微通道板（MCP）。 离子阻挡膜（IBF）设置在MCP的输入侧的顶部，其中IBF包括少量的导电材料。 IBF可以包括掺杂有氧化铬的氧化铝或氧化锰，或任何其它导电材料。 少量导电材料在非导电材料层中包括1％至5％的导电材料。
-
公开(公告)号：US20150092924A1
公开(公告)日：2015-04-02
申请号：US14465816
申请日：2014-08-21
Applicant: Wenbing Yun , Sylvia Yun Lewis , Janos Kirz
Inventor： Wenbing Yun , Sylvia Yun Lewis , Janos Kirz
CPC classification number: H01J35/12 , G03F7/16 , G03F7/36 , H01J35/105 , H01J2235/081 , H01J2235/1204
Abstract: We disclose targets for generating x-rays using electron beams, along with their method of fabrication. The targets comprise a number of microstructures fabricated from an x-ray target material arranged in close thermal contact with a substrate such that the heat is more efficiently drawn out of the x-ray target material. This in turn allows irradiation of the x-ray generating substance with higher electron density or higher energy electrons, which leads to greater x-ray brightness, without inducing damage or melting.The microstructures may comprise conventional x-ray target materials (such as tungsten) that are patterned at micron-scale dimensions on a thermally conducting substrate, such as diamond. The microstructures may have any number of geometric shapes to best generate x-rays of high brightness and efficiently disperse heat.In some embodiments, the target comprising microstructures may be incorporated into a rotating anode geometry, to enhance x-ray generation in such systems.
Abstract translation: 我们公开了使用电子束产生X射线的目标及其制造方法。 目标包括由与基板紧密热接触设置的x射线靶材料制成的许多微结构，使得热量更有效地从x射线靶材料中拉出。 这又允许以更高的电子密度或更高能量的电子照射x射线产生物质，这导致更大的x射线亮度，而不引起损伤或熔化。 微结构可以包括在诸如金刚石的导热基底上以微米级尺寸图案化的常规x射线靶材料（例如钨）。 微结构可以具有任何数量的几何形状，以最好地产生高亮度的x射线并有效地分散热量。 在一些实施例中，包括微结构的靶可以并入到旋转阳极几何中，以增强这种系统中的x射线产生。
-
10.发明申请Field emission surface light source apparatus and method of fabricating the same 审中-公开场发射面光源装置及其制造方法公开(公告)号：US20090167150A1
公开(公告)日：2009-07-02
申请号：US12232169
申请日：2008-09-11
Applicant: Ho-Suk Kang , Deuk-Seok Chung , Min-Jong Bae , Yong-Chul Kim
Inventor： Ho-Suk Kang , Deuk-Seok Chung , Min-Jong Bae , Yong-Chul Kim
Abstract: Provided are a field emission surface light source apparatus and a method of fabricating the field emission surface light source apparatus. The field emission surface light source apparatus includes a base substrate and a transparent substrate facing each other, a plurality of gate electrodes formed on an upper surface of the base substrate, an insulating layer formed on the upper surface of the base substrate to cover the gate electrodes, a plurality of emitters formed on an upper surface of the insulating layer, and a fluorescent layer formed on a lower surface of the transparent substrate. The fluorescent layer faces the emitters.
Abstract translation: 提供场致发射面光源装置和制造场发射面光源装置的方法。 场发射面光源装置包括：基板和透明基板;多个栅电极，形成在基板的上表面上;绝缘层，形成在基板的上表面上，以覆盖栅极; 电极，形成在绝缘层的上表面上的多个发射体和形成在透明基板的下表面上的荧光层。 荧光层面向发射体。
-
-
-
-
-
-
-
-
-
Search Results
840
records
(took 0.047 seconds)
