Current control device
    1.
    发明授权

    公开(公告)号:US06798331B2

    公开(公告)日:2004-09-28

    申请号:US10072587

    申请日:2002-02-08

    IPC分类号: H01L1010

    摘要: A current control device is described wherein a pressure conduction composite is compressed and decompressed to alter its conductivity and thereby current conduction through the device. The pressure conduction composite is composed of a nonconductive matrix, a conductive filler, and an additive. The invention consists of electrodes, a nonconducting isolator, and pressure plates contacting the composite. Electrically activated actuators apply a force onto pressures plates. Actuators are composed of a piezoelectric, piezoceramic, electrostrictive, magnetostrictive, and shape memory alloy materials, capable of extending and/or contracting thereby altering pressure and consequently resistivity within the composite. In an alternate embodiment, two or more current control devices are electrically coupled parallel to increase power handling.

    Ultra high pressure transducers
    2.
    发明授权

    公开(公告)号:US06577224B2

    公开(公告)日:2003-06-10

    申请号:US09815101

    申请日:2001-03-22

    申请人: Anthony D. Kurtz

    发明人: Anthony D. Kurtz

    IPC分类号: H01L1010

    摘要: An oil filled pressure transducer of the type employing a metal diaphragm has a diaphragm of a greater thickness than a conventional diaphragm. The thick diaphragm exhibits and accommodates extremely large pressures and deflects to cause a lower pressure to be transmitted to the oil. Because of the large thickness of the metal diaphragm, the diaphragm dissipates a predetermined percentage of the applied pressure, whereas a corresponding fraction of the applied pressure is transmitted to the oil and hence to the silicon sensors. In this manner the diaphragm acts as a step-down transformer where a portion of the force or pressure applied to the diaphragm is transmitted to the pressure sensor. The pressure sensor receives a pressure which is a fraction of the applied pressure and the sensor is compensated to produce an output proportional to the actual pressure as applied to the thick diaphragm.

    Pressure transducer employing on-chip resistor compensation
    3.
    发明授权
    Pressure transducer employing on-chip resistor compensation 有权
    采用片上电阻补偿的压力传感器

    公开(公告)号:US06700473B2

    公开(公告)日:2004-03-02

    申请号:US09503678

    申请日:2000-02-14

    IPC分类号: H01L1010

    摘要: A dielectrically isolated temperature compensated pressure transducer including: a wafer including a deflectable diaphragm formed therein, the diaphragm being capable of deflecting in response to an applied pressure, and the diaphragm defining an active region surrounded by an inactive region of the wafer; a plurality of dielectrically isolated piezoresistive elements formed on the active region of the wafer and coupled together to form a Wheatstone bridge configuration so as to cooperatively provide an output signal in response to and indicative of an amount of deflection of the diaphragm, the plurality of piezoresistive elements being undesirably operative to introduce an undesirable error into the output according to exposure of the wafer to an environmental condition; and, a dielectrically isolated resistor formed on the inactive region of the wafer and electrically coupled in series to the plurality of piezoresistive elements so as to at least partially compensate for the undesirable error.

    摘要翻译: 一种介电隔离的温度补偿压力传感器,包括:晶片,其包括形成在其中的可偏转光阑,所述光阑能够响应于所施加的压力而偏转,并且所述光阑限定由所述晶片的非活动区域包围的有源区域; 形成在晶片的有源区上并耦合在一起以形成惠斯登电桥结构的多个介电离子压阻元件,以协同地提供输出信号以响应并指示隔膜的偏转量,多个压阻 元件不合需要地操作以根据晶片暴露于环境条件而将不期望的误差引入到输出中; 以及形成在所述晶片的非活性区域上的电介质隔离的电阻器,其电耦合到所述多个压阻元件,以便至少部分地补偿所述不期望的误差。

    Force sensor
    4.
    发明授权
    Force sensor 失效
    力传感器

    公开(公告)号:US06531951B2

    公开(公告)日:2003-03-11

    申请号:US09801666

    申请日:2001-03-09

    IPC分类号: H01L1010

    摘要: The invention concerns a force sensor (10) comprising a first electrode (22) and a second electrode (24) made of conductive material, which are arranged spaced from each other on a first insulating support (12). The invention is characterized in that a contact element (26) is conductive material is placed opposite the two electrodes and some distance therefrom, said contact element t(26) being pressed against said electrodes (22, 24) when a force is exerted on the pressure sensor (10) and at least one of the electrodes (22, 24) is coated with a pressure sensitive material layer (28, 30).

    摘要翻译: 本发明涉及一种力传感器(10),其包括由导电材料制成的第一电极(22)和第二电极(24),它们在第一绝缘支撑件(12)上彼此间隔开。 本发明的特征在于,接触元件(26)是与两个电极相对的导电材料放置一定距离的位置,当力施加在所述接触元件(26)上时,所述接触元件t(26)被压靠在所述电极(22,24)上 压力传感器(10)和所述电极(22,24)中的至少一个涂覆有压敏材料层(28,30)。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US06313729B1

    公开(公告)日:2001-11-06

    申请号:US09180128

    申请日:1998-11-02

    IPC分类号: H01L1010

    摘要: A semiconductor component is fashioned of a chip carrier comprising an approximately planar chip carrier surface on which chip carrier surface a semiconductor chip with a pressure sensor is secured, and composed of electrode terminals penetrating the chip carrier and electrically connected to the semiconductor chip, with a surface-mounted arrangement. The chip overlapping the chip carrier.

    摘要翻译: 一种半导体部件由芯片载体构成,芯片载体包括大致平坦的芯片载体表面,芯片载体表面具有固定有压力传感器的半导体芯片,并且由穿过芯片载体并与半导体芯片电连接的电极端子组成, 表面安装。 该芯片与芯片载体重叠。

    Semiconductor composite sensor
    6.
    发明授权
    Semiconductor composite sensor 失效
    半导体复合传感器

    公开(公告)号:US06211772B1

    公开(公告)日:2001-04-03

    申请号:US09417235

    申请日:1997-09-05

    IPC分类号: H01L1010

    CPC分类号: G01L9/0054

    摘要: A semiconductor composite sensor using a plurality of semiconductor piezoresistive gauge elements connected in series. The piezoresistive elements are separated so that a high potential terminal of one of the resistive elements having the same resistance values and the substrate of the other of the resistive elements will be connected with equal potential values. Potential difference values between semiconductor regions serving as respective resistive elements and the substrates are made equal.

    摘要翻译: 一种使用串联连接的多个半导体压阻式元件的半导体复合传感器。 压阻元件被分离,使得具有相同电阻值的电阻元件之一的高电位端子和另一个电阻元件的衬底将以相等的电势值连接。 使作为各个电阻元件的半导体区域和基板之间的电位差值相等。