公开(公告)号：US20240363426A1

公开(公告)日：2024-10-31

申请号：US18770349

申请日：2024-07-11

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Cheng-Yu Yang ,  Yen-Ting Chen ,  Wei-Yang Lee ,  Fu-Kai Yang ,  Yen-Ming Chen

IPC分类号： H01L21/8234 ,  H01L21/033 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/823468 ,  H01L21/0337 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823864 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785

摘要： Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a substrate, at least two gate structures disposed over the substrate, each of the at least two gate structures including a gate electrode and a spacer disposed along sidewalls of the gate electrode, wherein the spacer includes a refill portion and a bottom portion, the refill portion of the spacer has a funnel shape such that a top surface of the refill portion of the spacer is larger than a bottom surface of the refill portion of the spacer, and a source/drain contact disposed over the substrate and between the spacers of the at least two gate structures.

公开(公告)号：US20240355670A1

公开(公告)日：2024-10-24

申请号：US18756269

申请日：2024-06-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ,  TSMC NANJING COMPANY, LIMITED

发明人： Min Han HSU ,  Chun-Chang CHEN ,  Jung-Chih TSAO

IPC分类号： H01L21/768 ,  H01L21/033 ,  H01L21/285 ,  H01L21/288 ,  H01L21/311 ,  H01L23/528 ,  H01L23/532

CPC分类号： H01L21/76807 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/28568 ,  H01L21/2885 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/5283 ,  H01L23/53228

摘要： A semiconductor device includes a connector layer; a dielectric layer over the connector layer; and a conductive element in the dielectric layer, the conductive element including: a first region having a first uniform width; a second region having a second uniform width, wherein the second uniform width is less than the first uniform width; and a shoulder between the first region and the second region, wherein an angle of the shoulder relative to a top surface of the connector layer is greater than 20 degrees and less than 70 degrees.

公开(公告)号：US20240355633A1

公开(公告)日：2024-10-24

申请号：US18762702

申请日：2024-07-03

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wen-Yen Chen

IPC分类号： H01L21/308 ,  H01L21/033 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

CPC分类号： H01L21/3086 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/30604 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816

摘要： A method includes forming an etching mask to cover a mandrel, a first spacer, and a second spacer, and the first spacer and the second spacer are in contact with opposing sidewalls of the mandrel. The etching mask is then patterned, and includes a first portion covering the first spacer, a second portion covering the second spacer, and a bridge portion connecting the first portion to the second portion. The bridge portion has first sidewalls. A first etching process is performed on the mandrel using the etching mask to define pattern, and after the first etching process, the mandrel includes a second bridge portion having second sidewalls vertically aligned to corresponding ones of the first sidewalls. After the mandrel is etched-through, a second etching process is performed to laterally recess the second bridge portion of the mandrel.

公开(公告)号：US20240355632A1

公开(公告)日：2024-10-24

申请号：US18638335

申请日：2024-04-17

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Yasuyuki YAMAMOTO ,  Tomohiro IMATA ,  Daisuke KORI

IPC分类号： H01L21/308 ,  G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/3081 ,  G03F7/094 ,  H01L21/0275 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

摘要： The present invention is a composition for forming an organic film, comprising: a resin for forming an organic film; a polymer having a unit represented by the general formula (I), and at least one of a unit represented by the general formula (II) and a unit represented by the general formula (III); and a solvent, wherein the unit represented by the general formula (I), and at least one of the unit represented by the general formula (II) and the unit represented by the general formula (III) form a random copolymer, and the polymer has a fluorine content of 5 mass % to 16 mass %. This provides: a composition for forming an organic film that has excellent film-formability on a substrate and filling characteristics, and that inhibits humps in EBR process; and a method for forming an organic film, and patterning process using this composition.

公开(公告)号：US12125800B2

公开(公告)日：2024-10-22

申请号：US17683474

申请日：2022-03-01

申请人： NANYA TECHNOLOGY CORPORATION

发明人： Chun-Yen Wei

IPC分类号： H01L23/544 ,  H01L21/768 ,  H01L23/522 ,  H01L21/027 ,  H01L21/033

CPC分类号： H01L23/544 ,  H01L21/76802 ,  H01L23/5226 ,  H01L21/0274 ,  H01L21/0337 ,  H01L2223/54426

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate, a first conductive feature, a first light-emitting feature, a first pattern and a second pattern. The first light-emitting feature is disposed on the substrate. The first pattern is disposed on the first light-emitting feature. The second pattern is disposed on the first pattern. The first conductive feature is disposed on the substrate and at least laterally overlaps the first pattern. The first light-emitting feature is configured to emit a light of a first wavelength. The first pattern has a first transmittance to the light of the first wavelength. The second pattern has a second transmittance to the light of the first wavelength. The first transmittance is different from the second transmittance.

公开(公告)号：US12112979B2

公开(公告)日：2024-10-08

申请号：US17833839

申请日：2022-06-06

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yan-Jhi Huang ,  Yu-Yu Chen

IPC分类号： H01L21/76 ,  H01L21/033 ,  H01L21/311 ,  H01L21/768

CPC分类号： H01L21/76816 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76829 ,  H01L21/76877

摘要： A method for manufacturing a semiconductor device includes forming a hard mask layer overlying a device layer of a semiconductor device, a mandrel underlayer over hard mask layer, and a mandrel layer over mandrel underlayer. The mandrel layer has a plurality of mandrel lines extending along a first direction. A plurality of openings are formed in mandrel underlayer extending in a second direction substantially perpendicular to first direction. A spacer layer is formed over mandrel underlayer and layer. Spacer layer fills plurality of openings in underlayer. Portions of spacer layer are removed to expose an upper surface of underlayer and mandrel layer, and mandrel layer is removed. By using remaining portions of spacer layer as a mask, underlayer and hard mask layer are removed, to form a hard mask pattern with first hard mask pattern lines extending along first direction and second hard mask pattern lines extending along second direction.

公开(公告)号：US20240329535A1

公开(公告)日：2024-10-03

申请号：US18361298

申请日：2023-07-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yen-Yu KUO ,  An-Ren ZI ,  Chen-Yu LIU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC分类号： G03F7/09 ,  C09D125/06 ,  C09D133/12 ,  G03F7/004 ,  H01L21/033

CPC分类号： G03F7/091 ,  C09D125/06 ,  C09D133/12 ,  G03F7/0044 ,  H01L21/033

摘要： A method of forming semiconductor device includes depositing a coating layer over a substrate, forming a photoresist layer over the coating layer, exposing the photoresist layer to actinic radiation, and developing the photoresist layer to form a patterned photoresist layer. The coating layer includes a polymer containing a first unit having a pendant hydrogen donor group capable of producing a hydrogen radical upon exposure to the actinic radiation or heat, and a second unit having a pendant water donor group capable of producing water upon exposure to the actinic radiation or heat.

公开(公告)号：US12106963B2

公开(公告)日：2024-10-01

申请号：US18140425

申请日：2023-04-27

申请人： Tessera LLC

发明人： Sean D. Burns ,  Lawrence A. Clevenger ,  Matthew E. Colburn ,  Nelson M. Felix ,  Sivananda K. Kanakasabapathy ,  Christopher J. Penny ,  Roger A. Quon ,  Nicole A. Saulnier

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/528 ,  H01L21/027 ,  H01L21/28 ,  H01L21/31 ,  H10K71/20 ,  H10N70/00

CPC分类号： H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816 ,  H01L23/528 ,  H01L21/0274 ,  H01L21/28123 ,  H01L21/31 ,  H01L21/76897 ,  H01L2224/0362 ,  H01L2224/11622 ,  H10K71/233 ,  H10N70/063

摘要： A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.

公开(公告)号：US20240321579A1

公开(公告)日：2024-09-26

申请号：US18608609

申请日：2024-03-18

申请人： ASM IP Holding B.V.

发明人： Devika Choudhury ,  Jereld Lee Winkler ,  Kamesh Mullapudi ,  Mihaela Balseanu ,  Michael Schmotzer

IPC分类号： H01L21/02 ,  H01L21/033 ,  H01L21/311

CPC分类号： H01L21/02661 ,  H01L21/0332 ,  H01L21/31111 ,  H01L21/31144

摘要： Methods for forming a semiconductor structure are disclosed. The methods include forming a bilayer hardmask by depositing a first hardmask layer and a second hardmask layer over a substrate including a first region and a second region. Exemplary structures formed can include CMOS device structures.

公开(公告)号：US12100594B2

公开(公告)日：2024-09-24

申请号：US17595589

申请日：2021-03-12

申请人： CHANGXIN MEMORY TECHNOLOGIES, INC.

发明人： ChihCheng Liu

IPC分类号： H01L21/033 ,  H01L21/265 ,  H01L21/266 ,  H10B12/00

CPC分类号： H01L21/0338 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/26513 ,  H01L21/266 ,  H10B12/00

摘要： An active region array formation method is provided, including: providing a substrate, and forming a first hard mask layer on a surface of the substrate; patterning the first hard mask layer by using a composite etching process to form an active region shielding layer in the first hard mask layer, a pattern of the active region shielding layer being matched with a pattern of a to-be-formed active region array, wherein the composite etching process includes at least two patterning processes and at least one pattern transfer process; removing the remaining first hard mask layer; and forming the active region array in the substrate through the active region shielding layer.