公开(公告)号：US12154793B2

公开(公告)日：2024-11-26

申请号：US16938552

申请日：2020-07-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi Nagami ,  Kazuya Nagaseki

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/14 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/67

Abstract: An etching apparatus includes: a placement table serving as a lower electrode and configured to place a workpiece to be subjected to an etching processing thereon; a DC power supply configured to generate a negative DC voltage applied to the placement table; and a controller configured to: periodically apply a negative DC voltage to the placement table from the DC power supply when the etching processing on the workpiece placed on the placement table is initiated, and decrease a frequency of the negative DC voltage applied to the placement table with an elapse of processing time of the etching processing.

公开(公告)号：US10178286B2

公开(公告)日：2019-01-08

申请号：US14838145

申请日：2015-08-27

Applicant: CANON KABUSHIKI KAISHA

Inventor： Masao Ishioka ,  Daisuke Shimoyama ,  Takayuki Sumida ,  Kei Aoki ,  Yasuhiro Kawabata ,  Naoki Inatani ,  Tomoyuki Tezuka ,  Jun Iwata ,  Masaki Kurihara

IPC: H01L21/14 ,  H04N5/225 ,  G02B5/20 ,  G03F7/00 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  H01L27/146

Abstract: A method for forming a color filter array includes a step of exposing a photosensitive color filter film, a step of forming a color filter array from the color filter film by developing the color filter film using a developer, and a step of cleaning the color filter array while rotating the color filter array and moving a nozzle for spraying fluid containing liquid and gas above the color filter array in a direction intersecting with an axis of the rotation. The method reduces variation in thickness of a color filter that is generated in the cleaning step.

公开(公告)号：US09379064B2

公开(公告)日：2016-06-28

申请号：US14697950

申请日：2015-04-28

Applicant: STATS ChipPAC, Ltd.

Inventor： JiHoon Oh ,  SinJae Lee ,  JinGwan Kim

IPC: H01L21/301 ,  H01L21/46 ,  H01L21/78 ,  H01L21/14 ,  H01L23/10 ,  H01L23/34 ,  H01L23/552 ,  H01L21/56 ,  H01L23/31 ,  H01L23/36 ,  H01L23/538 ,  H01L21/52 ,  H01L21/768 ,  H01L23/367 ,  H01L23/522 ,  H01L23/528 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L23/552 ,  H01L21/52 ,  H01L21/561 ,  H01L21/565 ,  H01L21/76877 ,  H01L21/76895 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/3675 ,  H01L23/49816 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/19 ,  H01L2224/20 ,  H01L2224/211 ,  H01L2224/24246 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/83005 ,  H01L2224/92244 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device is made by forming a heat spreader over a carrier. A semiconductor die is mounted over the heat spreader with a first surface oriented toward the heat spreader. A first insulating layer is formed over the semiconductor die and heat spreader. A via is formed in the first insulating layer. A first conductive layer is formed over the first insulating layer and connected to the heat spreader through the via and to contact pads on the semiconductor die. The heat spreader extends from the first surface of the semiconductor die to the via. A second insulating layer is formed over the first conductive layer. A second conductive layer is electrically connected to the first conductive layer. The carrier is removed. The heat spreader dissipates heat from the semiconductor die and provides shielding from inter-device interference. The heat spreader is grounded through the first conductive layer.

公开(公告)号：US07790615B2

公开(公告)日：2010-09-07

申请号：US11459187

申请日：2006-07-21

Applicant: Bernard Diem

Inventor： Bernard Diem

IPC: H01L21/14 ,  H01L27/08 ,  H01L21/465 ,  H01L21/479

CPC classification number: B81C1/00285 ,  B81C2203/0145

Abstract: The invention relates to a method to seal a cavity, comprising a hole (6), comprising: the deposition on at least part of the cover, or an electrically conductive material (4, 5), the conveyance of part of this material by electro-migration into the hole (6) to form a plug (20).

Abstract translation: 本发明涉及一种密封空腔的方法，包括一个孔（6），包括：在至少部分盖子上的沉积物或导电材料（4,5），通过电子传递该材料的一部分 - 移入孔（6）以形成塞子（20）。

公开(公告)号：US07145213B1

公开(公告)日：2006-12-05

申请号：US10901314

申请日：2004-07-27

Applicant: John L. Ebel ,  Rebecca Cortez ,  Richard E. Strawser ,  Kevin D. Leedy

Inventor： John L. Ebel ,  Rebecca Cortez ,  Richard E. Strawser ,  Kevin D. Leedy

IPC: H01L21/14

CPC classification number: H01H59/0009

Abstract: A capacitance coupled, transmission line-fed, radio frequency MEMS switch and its fabrication process using photoresist and other low temperature processing steps are described. The achieved switch is disposed in a low cost dielectric housing free of undesired electrical effects on the switch and on the transmission line(s) coupling the switch to an electrical circuit. The dielectric housing is provided with an array of sealable apertures useful for wet, but hydrofluoric acid-free, removal of switch fabrication employed materials and also useful during processing for controlling the operating atmosphere surrounding the switch—e.g. at a pressure above the high vacuum level for enhanced switch damping during operation. Alternative arrangements for sealing an array of dielectric housing apertures are included. Processing details including plan and profile drawing views, specific equipment and materials identifications, temperatures and times are also disclosed.

Abstract translation: 描述了一种电容耦合，传输线馈电，射频MEMS开关设备，可利用低温光刻胶基于晶片刻度的加工步骤。 开关装置设置在低成本的绝缘壳体中，不会对开关和将开关耦合到电路的传输线路产生不期望的电效应。 介电壳体设置有可用于湿式但不含氢氟酸的可密封孔的阵列，其除去开关制造用材料，并且在用于控制开关周围的操作气氛的处理期间也是有用的，例如在高于高压 真空度可在运行期间增强和选择开关阻尼。 包括介质壳体孔阵列的替代密封装置。 包括计划和简档图纸视图，特定设备和材料标识，温度和时间的处理细节。 MEMS开关也可以是金属接触型。

公开(公告)号：US5593917A

公开(公告)日：1997-01-14

申请号：US275445

申请日：1994-06-06

Applicant: Linh T. Nuyen

Inventor： Linh T. Nuyen

IPC: H01L21/306 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L21/338 ,  H01L21/68 ,  H01L21/76 ,  H01L21/78 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/80 ,  H01L29/812 ,  H01L21/14 ,  H01L21/465

CPC classification number: H01L21/6835 ,  H01L21/7605 ,  H01L21/78 ,  H01L21/8252 ,  H01L27/0605 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2924/30105

Abstract: The method is characterized by the steps consisting in: a) producing a semi-insulating or n-type substrate; b) forming a separating layer of a p.sup.+ -type doped material on the surface of said substrate; c) forming an active layer on said separating layer, the active layer including at least a bottom layer with n-type doping; d) making a set of semiconductor components by etching and metalizing said active layer; g) fixing a common support plate on the assembly made in this way, thereby holding the components together mechanically; and h) dissolving the material of the separating layer anodically and without illumination while leaving the other materials intact, thereby separating the substrate from said components without dissolving the substrate.

Abstract translation: 该方法的特征在于以下步骤：a）制备半绝缘或n型衬底; b）在所述衬底的表面上形成p +型掺杂材料的分离层; c）在所述分离层上形成有源层，所述有源层至少包括具有n型掺杂的底层; d）通过蚀刻和金属化所述有源层制造一组半导体部件; g）将公共支撑板固定在以这种方式制成的组件上，从而将组件机械地保持在一起; 并且h）阳极地和不照射地分离所述分离层的材料，同时使其他材料保持完整，从而将基材与所述组分分离而不溶解所述基材。

公开(公告)号：US5316971A

公开(公告)日：1994-05-31

申请号：US947103

申请日：1992-09-18

Applicant: Steve S. Chiang ,  Wenn-Jei Chen ,  Esam Elashmawi

Inventor： Steve S. Chiang ,  Wenn-Jei Chen ,  Esam Elashmawi

IPC: H01L21/82 ,  H01L23/525 ,  H01L21/14 ,  H01L21/306 ,  H01L21/326 ,  H01L21/465

CPC classification number: H01L23/5252 ,  H01L2924/0002

Abstract: A method for programming antifuses having at least one metal electrode includes the steps of providing an antifuse programming voltage source, capable of supplying alternating positive and negative programming voltage pulses; providing a programming path from the antifuse programming voltage source to the antifuse; and providing a selected number of alternating positive and negative programming voltage pulses to the antifuse through the programming path.

Abstract translation: 一种用于编程具有至少一个金属电极的反熔丝的方法包括以下步骤：提供反熔丝编程电压源，其能够提供交替的正和负编程电压脉冲; 提供从反熔丝编程电压源到反熔丝的编程路径; 以及通过所述编程路径向所述反熔丝提供所选数量的交替的正和负编程电压脉冲。

公开(公告)号：US2610386A

公开(公告)日：1952-09-16

申请号：US10734149

申请日：1949-07-28

Applicant: VICKERS INC

Inventor： OTTO SASLAW

IPC: H01L21/14

CPC classification number: H01L21/14 ,  H01L21/02521 ,  H01L21/02625 ,  H01L21/02667

公开(公告)号：US2471898A

公开(公告)日：1949-05-31

申请号：US74071947

申请日：1947-04-10

Applicant: VICKERS INC

Inventor： RAU DAVID W

IPC: H01L21/105 ,  H01L21/14

CPC classification number: H01L21/14 ,  H01L21/105

公开(公告)号：US2241908A

公开(公告)日：1941-05-13

申请号：US27665239

申请日：1939-05-31

Applicant: SUDDEUTSCHE APP FABRIK G M B H

Inventor： HEINRICH HERRMANN

IPC: H01L21/14

CPC classification number: H01L21/14