公开(公告)号：US12234382B2

公开(公告)日：2025-02-25

申请号：US17384940

申请日：2021-07-26

Applicant: CMC Materials, Inc.

Inventor： Hsin-Yen Wu ,  Jin-Hao Jhang ,  Cheng-Yuan Ko

IPC: C09G1/02 ,  C09K3/14 ,  C09K13/00 ,  H01L21/321 ,  H01L21/768

Abstract: A chemical mechanical polishing composition for polishing tungsten or molybdenum comprises, consists essentially of, or consists of a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof, an anionic polymer or an anionic surfactant, and an optional amino acid surfactant. A method for chemical mechanical polishing a substrate including a tungsten layer or a molybdenum layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate.

公开(公告)号：US12230508B1

公开(公告)日：2025-02-18

申请号：US18805861

申请日：2024-08-15

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： Pierre Montmeat ,  Franck Fournel

IPC: H01L21/321 ,  H01L21/311 ,  H01L21/3213

Abstract: A method comprising the following steps: a) Bonding a handle substrate including raised elements to a substrate of interest including a support substrate covered with a thin film including a material sensitive to an etchant, whereby the thin film includes first areas not covered with the raised elements and second areas covered with said elements, b) Placing into contact the obtained assembly with a solution including a hydrophobic agent, to cover the first areas with a hydrophobic film, c) Separating the two substrates, d) Placing into contact the substrate of interest with a solution containing the etchant, whereby the material sensitive to the etchant present in the second areas is etched and raised patterns are formed.

公开(公告)号：US20250038008A1

公开(公告)日：2025-01-30

申请号：US18360930

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ming-Hsiang Cheng ,  Ting-Kui Chang ,  Fu-Ming Huang ,  Li-Chieh Wu ,  Che-Hao Tu

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/768

Abstract: Methods for chemical mechanical polishing (CMP), and methods for forming an interconnect structure of a semiconductor device are provided. The methods include performing CMP on a surface of a dielectric structure with a CMP slurry to remove a portion of a metal layer formed in the dielectric structure and having at least a first layer exposed through the surface. In some examples, the CMP slurry that includes an abrasive, an oxidizing agent, and a compound configured to reduce aggregation of the abrasive on the surface of the dielectric structure. In some examples, the compound has positively charged ions that interact with the abrasive to reduce aggregation of the abrasive on a dielectric material. In some examples, the CMP slurry includes potassium hydroxide. In some examples, the compound includes an ammonium salt.

公开(公告)号：US20250011624A1

公开(公告)日：2025-01-09

申请号：US18761170

申请日：2024-07-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyune Jea LEE ,  Sang Soo JEE ,  Kee Chang LEE ,  Jung Hoon LEE

IPC: C09G1/02 ,  H01L21/321

Abstract: A polishing slurry and a method of manufacturing a semiconductor device using the polishing slurry. The polishing slurry includes plate-shaped particles having a Mohs hardness of less than or equal to about 5, and a spherical abrasive. The plate-shaped particles have a thermal conductivity in a dimensional direction of greater than or equal to about 10 W/mK, and the plate-shaped particles have a larger average particle size than the spherical abrasive. Also, the plate-shaped particles and the spherical abrasive are not chemically bonded to the other.

公开(公告)号：US20250001547A1

公开(公告)日：2025-01-02

申请号：US18883149

申请日：2024-09-12

Applicant: Applied Materials, Inc.

Inventor： Kevin H. Song ,  Benedict W. Pang

IPC: B24B37/04 ,  B24B57/02 ,  H01L21/3105 ,  H01L21/321

Abstract: Exemplary substrate electrochemical planarization apparatuses may include a chuck body defining a substrate support surface. The apparatuses may include a retaining wall extending from the chuck body. The apparatuses may include an electrolyte delivery port disposed radially inward of the retaining wall. The apparatuses may include a spindle that is positionable over the chuck body. The apparatuses may include an end effector coupled with a lower end of the spindle. The end effector may be conductive. The apparatuses may include an electric contact extending from the chuck body or retaining wall. The apparatuses may include a current source. The current source may be configured to provide an electric current to an electrolyte within an open interior defined by the retaining wall.

公开(公告)号：US12172264B2

公开(公告)日：2024-12-24

申请号：US18351260

申请日：2023-07-12

Applicant: Applied Materials, Inc.

Inventor： Young J. Paik ,  Ashish Bhatnagar ,  Kadthala Ramaya Narendrnath

IPC: B24B37/30 ,  B24B37/32 ,  H01L21/321

Abstract: An apparatus comprises a flexible membrane for use with a carrier head of a substrate chemical mechanical polishing apparatus. The membrane comprises an outer surface providing a substrate receiving surface, wherein the outer surface has a central portion and an edge portion surrounding the central portion, wherein the central portion has a first surface roughness and the edge portion has a second surface roughness, the first surface roughness being greater than the second surface roughness.

公开(公告)号：US20240420978A1

公开(公告)日：2024-12-19

申请号：US18334955

申请日：2023-06-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Jeng-Chi LIN ,  Chi-hsiang SHEN ,  Te-Chien HOU ,  Tang-Kuei CHANG ,  Chi-Jen LIU ,  Hui-Chi HUANG ,  Kei-Wei CHEN

IPC: H01L21/673 ,  H01L21/306 ,  H01L21/321 ,  H01L21/67

Abstract: Provided is a chemical-mechanical polishing apparatus, a retaining ring for a chemical-mechanical polishing apparatus, and a chemical-mechanical polishing method. A chemical-mechanical polishing apparatus includes a polishing pad; a polishing head configured to receive a wafer and to hold the wafer against the polishing pad; and a retaining ring configured to engage with the polishing head, wherein the retaining ring is formed with channels configured for flowing a slurry in a flow direction from outside the retaining ring to inside the retaining ring, wherein the channels have a cross-sectional flow area that decreases in the flow direction.

公开(公告)号：US20240417595A1

公开(公告)日：2024-12-19

申请号：US18753400

申请日：2024-06-25

Applicant: FUJIMI INCORPORATED

Inventor： Tzu-Chun TSENG

IPC: C09G1/02 ,  C01B33/12 ,  H01L21/321

Abstract: Provided is a polishing composition that allows carbon-added silicon oxide (SiOC) to be polished at a higher polishing speed than the polishing speed of silicon nitride (i.e., the selection ratio of SiOC/silicon nitride is high).
A polishing composition containing spinous silica particles and a dispersing medium, in which the pH is less than 5.

公开(公告)号：US20240404877A1

公开(公告)日：2024-12-05

申请号：US18784282

申请日：2024-07-25

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tsai-Ming HUANG ,  Wei-Chieh HUANG ,  Hsun-Chung KUANG ,  Yen-Chang CHU ,  Cheng-Che CHUNG ,  Chin-Wei LIANG ,  Ching-Sen KUO ,  Jieh-Jang CHEN ,  Feng-Jia SHIU ,  Sheng-Chau CHEN

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/321 ,  H01L23/522 ,  H01L23/544

Abstract: In a method of manufacturing a semiconductor device, a first interlayer dielectric (ILD) layer is formed over a substrate, a chemical mechanical polishing (CMP) stop layer is formed over the first ILD layer, a trench is formed by patterning the CMP stop layer and the first ILD layer, a metal layer is formed over the CMP stop layer and in the trench, a sacrificial layer is formed over the metal layer, a CMP operation is performed on the sacrificial layer and the metal layer to remove a portion of the metal layer over the CMP stop layer, and a remaining portion of the sacrificial layer over the trench is removed.

公开(公告)号：US20240392214A1

公开(公告)日：2024-11-28

申请号：US18792828

申请日：2024-08-02

Applicant: FUJIFILM Corporation

Inventor： Naotsugu MURO ,  Tadashi INABA ,  Tetsuya KAMIMURA

IPC: C11D3/20 ,  C11D3/00 ,  C11D3/30 ,  C11D3/36 ,  C11D3/43 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321

Abstract: An object of the present invention is to provide a composition in which, even in a case of being used after a lapse of a predetermined period from production, removal performance of residues and anticorrosion properties of a tungsten-containing film are excellent, and deterioration of electrical properties of the tungsten-containing film can be suppressed; and to provide a manufacturing method of a semiconductor element.
The composition of the present invention contains sorbic acid, citric acid, an amine-containing compound which is at least one selected from the group consisting of ammonia, an organic amine, a quaternary ammonium compound, and salts thereof, a specific compound which has at least one group selected from the group consisting of a phosphono group and a phosphoric acid group, and water, in which a pH at 25° C. is 4.0 to 9.0.