公开(公告)号：US20240363372A1

公开(公告)日：2024-10-31

申请号：US18642477

申请日：2024-04-22

申请人： EBARA CORPORATION

发明人： Mitsuru MIYAZAKI ,  Hiroshi SOTOZAKI ,  Hiroki MIYAMOTO ,  Kenichi TAKEBUCHI ,  Saki MIYAGAWA ,  Hiroki SAITO ,  Takuya INOUE ,  Shozo TAKAHASHI ,  Ryohei ISHII

IPC分类号： H01L21/67 ,  H01L21/687

CPC分类号： H01L21/67051 ,  H01L21/67034 ,  H01L21/67092 ,  H01L21/68707

摘要： A substrate processing apparatus that can quickly transport a polished substrate (e.g., a wafer) to a cleaning module is disclosed. A first processing unit includes: a polishing module configured to polish the substrate W; a cleaning module configured to clean the substrate W; a drying module configured to dry the cleaned substrate W; a substrate transporter extending from one side to opposite side of the first processing unit; an elevating transporter configured to transport the substrate from the substrate transporter to the polishing module and from the polishing module to the cleaning module; and a relay transporter configured to transport the substrate. The relay transporter of the first processing unit is configured to transport the substrate between processing units.

公开(公告)号：US20240363329A1

公开(公告)日：2024-10-31

申请号：US18766666

申请日：2024-07-09

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： CHIH-MING TSAO ,  PO-CHENG CHEN ,  DENG-AN WANG

IPC分类号： H01L21/02 ,  B01D47/02 ,  B01D50/00 ,  H01L21/67

CPC分类号： H01L21/02057 ,  B01D47/028 ,  B01D50/00 ,  H01L21/02334 ,  H01L21/67051

摘要： A system for processing a semiconductor wafer is provided. The system includes a processing tool. The system also includes gas handling housing having a gas inlet and a gas outlet. The system further includes an exhaust conduit fluidly communicating with the processing tool and the gas inlet of the gas handling housing. In addition, the system includes at least one first filtering assembly and at least one second filtering assembly. The first filtering assembly and the second filtering assembly are positioned in the gas handling housing and arranged in a series along a flowing path that extends from the gas inlet to the gas outlet of the gas handling housing. Each of the first filtering assembly and the second filtering assembly comprises a plurality of wire meshes stacked on top of another.

公开(公告)号：US20240361072A1

公开(公告)日：2024-10-31

申请号：US18644688

申请日：2024-04-24

申请人： SCREEN Holdings Co., Ltd.

发明人： Tomohiro UEMURA ,  Kazuhiro SHOJI ,  Ryotaro SHINOHARA ,  Shuhei NEMOTO

IPC分类号： F26B3/04 ,  B08B3/04 ,  H01L21/67

CPC分类号： F26B3/04 ,  B08B3/041 ,  H01L21/67028

摘要： This invention is directed to substrate processing techniques for performing a chemical liquid processing, a cleaning process, or the like on a substrate. In this invention, while the substrate is processed with the processing liquid, liquid droplets of the processing liquid scattered from the substrate are collected by an inner peripheral surface of a cup. After this processing and before the cup is elevated to a cup elevation position, a heated gas is supplied to the inner peripheral surface of the cup via an upper surface of the substrate while the cup is rotated. Thus, the cup is dried by the rotation of the cup and the supply of the heated gas to the cup.

公开(公告)号：US20240359220A1

公开(公告)日：2024-10-31

申请号：US18648197

申请日：2024-04-26

申请人： SCREEN Holdings Co., Ltd.

发明人： Shigeru YAMAMOTO ,  Yasuhiko NAGAI ,  Keiji IWATA ,  Takashi AKIYAMA ,  Akira ITO ,  Daiki FUJII ,  Kazuki GODA ,  Yosuke NISHINO ,  Yuya KAWAI ,  Kenji EDAMITSU

IPC分类号： B08B9/027 ,  H01L21/67

CPC分类号： B08B9/027 ,  H01L21/6715 ,  B08B2209/027

摘要： Provided is a substrate treating apparatus for treating a substrate. The substrate treating apparatus includes a substrate treating unit configured to supply a water-insoluble water repellent to the substrate to perform water-repellent treatment to the substrate, a decomposition solution mixing mechanism configured to mix a decomposition solution for decomposing the water repellent to a water repellent-containing liquid that contains the water repellent as a waste liquid generated through the water-repellent treatment of the substrate, and a discharging unit configured to discharge a mixed liquid of the water repellent-containing liquid and the decomposition solution to an outside of the substrate treating apparatus.

公开(公告)号：US12131964B2

公开(公告)日：2024-10-29

申请号：US17878176

申请日：2022-08-01

申请人： Hitachi High-Tech Corporation

发明人： Kousuke Fukuchi ,  Ryoji Asakura ,  Soichiro Eto ,  Tsubasa Okamoto ,  Tatehito Usui ,  Shigeru Nakamoto

IPC分类号： H01L21/66 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/67

CPC分类号： H01L22/26 ,  H01J37/32834 ,  H01J37/32963 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/67069 ,  H01L21/67253 ,  H01J2237/334

摘要： A plasma processing method to detect and process a thickness of the processing target film with high accuracy when a fine shape of the semiconductor wafer surface varies, including detecting a state of a processing target film of a processing target material that is processed inside a vacuum processing chamber; detecting light emission of the plasma; obtaining a differential waveform data of the light emission of the plasma; storing a plurality of pieces of differential waveform pattern data in advance; calculating an estimated value of the film thickness of the processing target film processed on the processing target material by weighting based on differences between the differential waveform data obtained and the plurality of pieces of differential waveform pattern data stored; and determining an end point of processing using the plasma based on the estimated value of the film thickness of the processing target film calculated.

公开(公告)号：US12131934B2

公开(公告)日：2024-10-29

申请号：US17063334

申请日：2020-10-05

申请人： Applied Materials, Inc.

发明人： Katherine Woo ,  Paul L. Brillhart ,  Jian Li ,  Shinnosuke Kawaguchi ,  David W. Groechel ,  Dorothea Buechel-Rimmel ,  Juan Carlos Rocha-Alvarez ,  Paul E. Fisher ,  Chidambara A. Ramalingam ,  Joseph J. Farah

IPC分类号： H01L21/67 ,  G01L9/08 ,  H01J37/32 ,  H01L21/68 ,  H04Q9/00 ,  H01L21/683

CPC分类号： H01L21/68 ,  G01L9/08 ,  H01J37/32724 ,  H04Q9/00 ,  H01J2237/20264 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/6838

摘要： Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The systems may include a leveling apparatus seated on the substrate support. The leveling apparatus may include a plurality of piezoelectric pressure sensors.

公开(公告)号：US12131919B2

公开(公告)日：2024-10-29

申请号：US17755446

申请日：2020-10-19

申请人： Tokyo Electron Limited

发明人： Tsunenaga Nakashima ,  Masami Akimoto

IPC分类号： H01L21/67 ,  B05B1/00 ,  B05B1/28 ,  B05B12/18 ,  H01L21/02 ,  H01L21/687

CPC分类号： H01L21/67028 ,  B05B1/005 ,  B05B1/28 ,  B05B12/18 ,  H01L21/02046 ,  H01L21/02057 ,  H01L21/68735

摘要： A particle removed from a substrate is suppressed from adhering to the substrate again. A substrate cleaning apparatus includes a substrate holder configured to hold the substrate; a gas nozzle configured to jet a cleaning gas to the substrate on the substrate holder; and a nozzle cover provided to surround the gas nozzle. The cleaning gas is jetted to a decompression chamber of the nozzle cover from the gas nozzle, and a gas cluster configured to remove the particle on the substrate in the decompression chamber is generated. A gas for a gas curtain is jetted from an end portion of the nozzle cover toward the substrate, and the gas curtain is formed between the substrate and the end portion of the nozzle cover.

公开(公告)号：US12131907B2

公开(公告)日：2024-10-29

申请号：US16080156

申请日：2016-03-22

申请人： EV Group E. Thallner GmbH

发明人： Thomas Wagenleitner ,  Thomas Plach ,  Jurgen Markus Suss

IPC分类号： H01L21/20 ,  H01L21/67 ,  H01L21/683 ,  H01L23/32

CPC分类号： H01L21/2007 ,  H01L21/67092 ,  H01L21/67288 ,  H01L21/6838 ,  H01L23/32

摘要： A method and a corresponding device for bonding a first substrate with a second substrate at mutually facing contact faces of the substrates. The method includes holding of the first substrate to a first holding surface of a first holding device and holding of the second substrate to a second holding surface of a second holding device. A change in curvature of the contact face of the first substrate and/or a change in curvature of the contact face of the second substrate are controlled during the bonding.

公开(公告)号：US12131887B2

公开(公告)日：2024-10-29

申请号：US17307654

申请日：2021-05-04

申请人： Tokyo Electron Limited

发明人： Yunho Kim ,  Yanxiang Shi ,  Mingmei Wang

IPC分类号： H01J37/32 ,  H01J37/18 ,  H01L21/67

CPC分类号： H01J37/32266 ,  H01J37/18 ,  H01J37/32091 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32715 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/67069

摘要： A plasma processing system includes a vacuum system, a plasma processing chamber including a chamber cavity coupled to the vacuum system, a substrate holder including a surface inside the chamber cavity, a radio frequency (RF) source electrode coupled to an RF power source, the RF source electrode configured to ignite plasma in the chamber cavity. The system includes microwave source coupled to a microwave oscillator, and an electromagnetic (EM) metasurface, where the EM metasurface having a major surface electromagnetically coupled to the microwave source, the major surface configured to couple microwave power to the plasma in the chamber cavity.

公开(公告)号：US20240355911A1

公开(公告)日：2024-10-24

申请号：US18763721

申请日：2024-07-03

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Nan WANG

IPC分类号： H01L29/66 ,  H01L21/67 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/78

CPC分类号： H01L29/66795 ,  H01L21/67075 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/7851

摘要： A semiconductor device includes a substrate, a plurality of fins discretely arranged on the substrate, a connecting layer on sidewalls of the plurality of fins and between adjacent fins, and a gate structure across the plurality of fins and the connecting layer on the substrate. A top surface of the connecting layer is coplanar with a top surface of the plurality of fins. Each fin of the plurality of fins includes one or more channel layers spaced apart from each other. Each of the one or more channel layers is surrounded by the gate structure.