公开(公告)号：US20240274492A1

公开(公告)日：2024-08-15

申请号：US18432134

申请日：2024-02-05

申请人： KELK Ltd. ,  TOKYO SEIMITSU CO., LTD.

发明人： Atsushi Kobayashi ,  Wataru Omuro ,  Takashi Motoyama ,  Takenori Takahashi ,  Shuhei Nishikawa

IPC分类号： H01L23/367 ,  H01L23/38

CPC分类号： H01L23/3675 ,  H01L23/38

摘要： A temperature adjustment device includes: a placement portion having a placement surface on which an object to be controlled temperature thereof is placed; a bottom portion facing the placement portion; a first support portion sandwiched between the placement portion and the bottom portion and supporting a center portion of the placement portion; a heat source portion disposed between the placement portion and the bottom portion and is allowed to heat and cool the object via the placement portion; a heat radiation portion disposed between the heat source portion and the bottom portion and exchanging heat with the heat source portion; and a second support portion disposed between the placement portion and the bottom portion and disposed close to the axis, wherein the second support portion supports an end portion of the heat radiation portion so as to separate the heat radiation portion from the bottom portion.

公开(公告)号：US12059251B2

公开(公告)日：2024-08-13

申请号：US16810183

申请日：2020-03-05

申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK

发明人： Qiao Lin ,  Yibo Zhu ,  Junyi Shang ,  Zhixing Zhang ,  Xuejun Wang ,  Jaeyoung Yang ,  Cheng Wang ,  Zhuang Hao

IPC分类号： A61B5/145 ,  A61B5/00 ,  A61B5/1477 ,  A61B5/1491 ,  G01N27/414 ,  G01N33/74 ,  H01L21/02 ,  H01L23/38 ,  H01L29/16 ,  H10K10/46 ,  H10K85/20

CPC分类号： A61B5/14532 ,  A61B5/14507 ,  A61B5/14539 ,  A61B5/14546 ,  A61B5/1477 ,  A61B5/1491 ,  A61B5/6821 ,  G01N27/4145 ,  G01N27/4146 ,  G01N33/74 ,  H01L21/02425 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02664 ,  H01L23/38 ,  H01L29/1606 ,  H10K10/484 ,  G01N2333/62 ,  H10K85/20

摘要： A microdevice for monitoring a target analyte is provided. The microdevice can include a field effect transistor comprising a substrate, a gate electrode, and a microfluidic channel including graphene. The microfluidic channel can be formed between drain electrodes and source electrodes on the substrate. The microdevice can also include at least one aptamer functionalized on a surface of the graphene. The at least one aptamer can be adapted for binding to the target analyte. Binding of the target analyte to the at least one aptamer can alter the conductance of the graphene.

公开(公告)号：US20240264374A1

公开(公告)日：2024-08-08

申请号：US18105304

申请日：2023-02-03

申请人： GlobalFoundries U.S. Inc.

发明人： Zhuojie Wu

IPC分类号： G02B6/122 ,  G02B6/136 ,  H01L23/38 ,  H01L23/48

CPC分类号： G02B6/1228 ,  G02B6/136 ,  H01L23/38 ,  H01L23/481 ,  G02B2006/12121

摘要： Structures for a cavity-mounted chip and methods of fabricating a structure for a cavity-mounted chip. The structure comprises a substrate including a cavity, a thermoelectric device inside the cavity, and a chip disposed inside the cavity adjacent to the thermoelectric device. The thermoelectric device includes a first plurality of pillars and a second plurality of pillars that alternate with the first plurality of pillars in a series circuit, the first plurality of pillars comprising an n-type semiconductor material, and the second plurality of pillars comprising a p-type semiconductor material.

公开(公告)号：US12052827B2

公开(公告)日：2024-07-30

申请号：US18091133

申请日：2022-12-29

申请人： Hong Heng Sheng Electronical Technology (HuaiAn)Co., Ltd. ,  Avary Holding (Shenzhen) Co., Limited.

发明人： Pan Tang ,  Fu-Lin Chang

IPC分类号： H01L23/00 ,  H01L23/38 ,  H01L23/50 ,  H01L23/528 ,  H01L33/00 ,  H01L33/44 ,  H01L33/48 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/62 ,  H01L33/64 ,  H05K1/02 ,  H05K3/00 ,  H05K3/24

CPC分类号： H05K3/0094 ,  H05K1/0206 ,  H05K3/241

摘要： A circuit board with improved heat dissipation function and a method for manufacturing the circuit board are provided. The method includes providing a first metal layer defining a first slot; forming a first adhesive layer in the first slot; electroplating copper on each first pillar to form a first heat conducting portion; forming a first insulating layer on the first adhesive layer having the first heat conducting portion, and defining a first blind hole in the first insulating layer; filling the first blind hole with thermoelectric separation metal to form a second heat conducting portion; forming a first wiring layer on the first insulating layer; forming a second insulating layer on the first wiring layer, defining a second blind hole on the second insulating layer; electroplating copper in the second blind hole to form a third heat conducting portion; mounting an electronic component on the second insulating layer.

公开(公告)号：US20240249998A1

公开(公告)日：2024-07-25

申请号：US18394985

申请日：2023-12-22

申请人： Adeia Semiconductor Bonding Technologies Inc.

发明人： Guilian Gao ,  Belgacem Haba ,  Laura Mirkarimi

IPC分类号： H01L23/46 ,  H01L23/00 ,  H01L23/053 ,  H01L23/38

CPC分类号： H01L23/46 ,  H01L23/053 ,  H01L23/38 ,  H01L24/08 ,  H01L2224/08245

摘要： In some implementations, a device package may include a package substrate, a package cover disposed on the package substrate, and an integrated cooling assembly disposed between the package substrate and the package cover. The integrated cooling assembly may include a semiconductor device and a cold plate having a first side attached to the semiconductor device and a second side opposite the first side. An adhesive layer may be disposed between the package cover and the second side of the cold plate, and one or more surfaces of second side of the cold plate may be spaced apart from the package cover to define a coolant channel therebetween. The adhesive layer may seal the package cover to the cold plate around a perimeter of the coolant channel.

公开(公告)号：US20240249995A1

公开(公告)日：2024-07-25

申请号：US18395391

申请日：2023-12-22

申请人： Adeia Semiconductor Bonding Technologies Inc.

发明人： Belgacem Haba

IPC分类号： H01L23/38 ,  H01L23/00 ,  H01L23/42

CPC分类号： H01L23/38 ,  H01L23/42 ,  H01L24/32 ,  H01L2224/32221

摘要： In some implementations, a device may include a thermoelectric cooler disposed embedded or integrally formed in one or more chips in arranged in a hybrid bonded device stack.

公开(公告)号：US12002736B2

公开(公告)日：2024-06-04

申请号：US18164734

申请日：2023-02-06

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Jesse Emmett Galloway

IPC分类号： H01L23/38 ,  H01L23/473 ,  H01L23/40

CPC分类号： H01L23/4735 ,  H01L23/38 ,  H01L23/40

摘要： A jet impingement cooling assembly for semiconductor devices includes a heat exchange base having an inlet chamber and an outlet chamber. An inlet connection may be in fluid connection with the inlet chamber, while an outlet connection may be in fluid connection with the outlet chamber. A jet plate may be coupled to the inlet chamber, and a jet pedestal may be formed on the jet plate and having a raised surface with a jet nozzle formed therein.

公开(公告)号：US20240162112A1

公开(公告)日：2024-05-16

申请号：US18423362

申请日：2024-01-26

申请人： The Johns Hopkins University

发明人： Rama Venkatasubramanian ,  Jonathan M. Pierce ,  Dezsi Geza

IPC分类号： H01L23/38 ,  H10N10/01 ,  H10N10/13 ,  H10N10/17 ,  H10N10/81 ,  H10N10/852

CPC分类号： H01L23/38 ,  H10N10/01 ,  H10N10/13 ,  H10N10/17 ,  H10N10/81 ,  H10N10/852 ,  H01L33/645

摘要： Example superlattice structures and methods for thermoelectric devices are provided. An example structure may include a plurality of superlattice periods. Each superlattice period may include a first material layer disposed adjacent to a second material layer. For each superlattice period, the first material layer may be formed of a first material and the second material layer may be formed of a second material. The plurality of superlattice periods may include a first superlattice period and a second superlattice period. A thickness of a first material layer of the first superlattice period may be different than a thickness of a first material layer of the second superlattice period.

公开(公告)号：US20240096740A1

公开(公告)日：2024-03-21

申请号：US18152131

申请日：2023-01-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chao-Wei Chiu ,  Chao-Wei Li ,  Hsiu-Jen Lin ,  Ching-Hua Hsieh

IPC分类号： H01L23/38 ,  H01L23/48 ,  H01L23/498 ,  H10N10/82

CPC分类号： H01L23/38 ,  H01L23/481 ,  H01L23/49816 ,  H10N10/82

摘要： Provided is a package structure including a first redistribution layer (RDL) structure, a die, a circuit substrate, and a first thermoelectric cooler. The RDL) structure has a first side and a second side opposite to each other. The die is disposed on the first side of the first RDL structure. The circuit substrate is bonded to the second side of the first RDL structure through a plurality of first conductive connectors. The first thermoelectric cooler is between the first RDL structure and the circuit substrate, wherein the first thermoelectric cooler includes at least a N-type doped region and at least a P-type doped region.

公开(公告)号：US11925003B2

公开(公告)日：2024-03-05

申请号：US17576700

申请日：2022-01-14

申请人： Dell Products L.P.

发明人： Eric Michael Tunks ,  Joseph Andrew Vivio ,  Tyler Baxter Duncan

IPC分类号： H05K7/20 ,  G06F1/20 ,  H01L23/38 ,  H05K1/02

CPC分类号： H05K7/20509 ,  G06F1/206 ,  H01L23/38 ,  H05K1/0203 ,  H05K7/20409 ,  H05K7/20718

摘要： A computing device includes a heat dissipation component, a heating or cooling apparatus, and a printed circuit board. The heating or cooling apparatus includes a heating or cooling component and a wire, and the heating or cooling component is affixed to a surface of the heat dissipation component. The printed circuit board includes a printed circuit board component, and the heat dissipation component is affixed to the printed circuit board component and configured to heat or cool the printed circuit board component.