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    Power module package baseplate with step recess design
    1.
    发明授权
    Power module package baseplate with step recess design 有权

    公开(公告)号：US12131981B2

    公开(公告)日：2024-10-29

    申请号：US18357931

    申请日：2023-07-24

    申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    发明人： Yushuang Yao ,  Vemmond Jeng Hung Ng

    IPC分类号： H01L23/492 ,  H01L21/48

    CPC分类号： H01L23/4924 ,  H01L21/4871

    摘要： Implementations described herein are related to a semiconductor device package having an improved baseplate. In such an improved baseplate, there is a recess cut out of a region of a surface of the baseplate such that the recess has a first sidewall having a first thickness above a recess base and a second sidewall having a second thickness above the recess base. A substrate, e.g., a direct bonded copper (DBC) substrate, may be attached to the baseplate at a recess base using, e.g., a solder layer between the recess base and a surface of the substrate.

    Semiconductor device and method for manufacturing semiconductor device
    4.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权

    公开(公告)号：US12057375B2

    公开(公告)日：2024-08-06

    申请号：US18324479

    申请日：2023-05-26

    申请人： ROHM CO., LTD.

    发明人： Maiko Hatano

    IPC分类号： H01L23/492 ,  H01L23/00 ,  H01L23/31

    CPC分类号： H01L23/4924 ,  H01L23/3114 ,  H01L24/83 ,  H01L2224/8384

    摘要： A semiconductor device A1 includes a semiconductor element 10A having an element obverse face 101 and an element reverse face 102, the element obverse face 101 having an obverse face electrode 11 formed thereon and the element reverse face 102 having a reverse face electrode 12 formed thereon, a conductive substrate 22A including an obverse face 221A opposed to the element reverse face 102, and to which the reverse face electrode 12 is conductively bonded, a conductive substrate 22B including an obverse face 221B and spaced from the conductive substrate 22A in a width direction x, and a lead member 51 extending in the width direction x, and electrically connecting the obverse face electrode 11 and the conductive substrate 22B. The lead member 51 is located ahead of the obverse face 221B in the direction in which the obverse face 221B is oriented, and bonded to the obverse face electrode 11 via a lead bonding layer 32. The conductive substrate 22A, the semiconductor element 10A, and the lead bonding layer 32 overlap with the conductive substrate 22B, as viewed in the width direction x.

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11990391B2

    公开(公告)日：2024-05-21

    申请号：US17475102

    申请日：2021-09-14

    申请人： DENSO CORPORATION

    发明人： Masayoshi Nishihata ,  Shota Yoshikawa

    IPC分类号： H01L23/492 ,  H01L23/31 ,  H01L23/367 ,  H01L25/07

    CPC分类号： H01L23/492 ,  H01L23/3107 ,  H01L23/367 ,  H01L25/072

    摘要： In a semiconductor device, a first metal plate faces a first semiconductor element and a second semiconductor element and is electrically connected to a second terminal. A second metal plate faces the first metal plate while interposing the first semiconductor element between the first and second metal plates, and is electrically connected to a first terminal. A third metal plate faces the first metal plate while interposing the second semiconductor element between the first and third metal plates. The first semiconductor element has an electrode on a surface adjacent to the second metal plate and electrically connected to the second metal plate, and an electrode on a surface adjacent to the first metal plate and electrically connected to the third metal plate. The first semiconductor element is thermally connected to the first metal plate while being electrically insulated from the first metal plate by an insulator.