公开(公告)号：US12047699B2

公开(公告)日：2024-07-23

申请号：US18093159

申请日：2023-01-04

申请人： Sony Group Corporation

发明人： Hideo Kido ,  Atsuhiko Yamamoto ,  Akihiro Yamada

IPC分类号： H04N25/75 ,  H01L27/146 ,  H01L27/148 ,  H04N25/71 ,  H04N25/767 ,  H04N25/77

CPC分类号： H04N25/75 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/148 ,  H04N25/745 ,  H04N25/767 ,  H04N25/77

摘要： A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.

公开(公告)号：US12027565B2

公开(公告)日：2024-07-02

申请号：US17733809

申请日：2022-04-29

申请人： SONY GROUP CORPORATION

发明人： Hideaki Togashi ,  Fumihiko Koga ,  Tetsuji Yamaguchi ,  Shintarou Hirata ,  Taiichiro Watanabe ,  Yoshihiro Ando ,  Toyotaka Kataoka ,  Satoshi Keino ,  Yukio Kaneda

IPC分类号： H01L27/148 ,  H01L27/146 ,  H10K30/30 ,  H10K30/82 ,  H10K39/32

CPC分类号： H01L27/14812 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H10K30/353 ,  H10K30/82 ,  H10K39/32

摘要： An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

公开(公告)号：US11990375B2

公开(公告)日：2024-05-21

申请号：US17852716

申请日：2022-06-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shih-Wen Huang ,  Jaming Chang ,  Kai Hung Cheng ,  Chia-Hui Lin ,  Jei Ming Chen

IPC分类号： H01L27/148 ,  H01L21/02 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06

CPC分类号： H01L21/823481 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/76224 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0653

摘要： Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.

公开(公告)号：US11948965B2

公开(公告)日：2024-04-02

申请号：US17220695

申请日：2021-04-01

申请人： OmniVision Technologies, Inc.

发明人： Hui Zang ,  Gang Chen

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L29/423

CPC分类号： H01L27/14643 ,  H01L27/14683 ,  H01L27/14831 ,  H01L27/14887 ,  H01L29/4236

摘要： An uneven-trench pixel cell includes a semiconductor substrate that includes a floating diffusion region, a photodiode region, and, between a front surface and a back surface: a first sidewall surface, a shallow bottom surface, a second sidewall surface, and a deep bottom surface. The first sidewall surface and a shallow bottom surface define a shallow trench, located between the floating diffusion region and the photodiode region, that extends into the semiconductor substrate from the front surface. A shallow depth of the shallow trench exceeds a junction depth of the floating diffusion region. The second sidewall surface and a deep bottom surface define a deep trench, located between the floating diffusion region and the photodiode region, that extends into the semiconductor substrate from the front surface. A distance between the deep bottom surface and the front surface defines a deep depth, of the deep trench, that exceeds the shallow depth.

公开(公告)号：US20240072077A1

公开(公告)日：2024-02-29

申请号：US18156989

申请日：2023-01-19

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Yuchao CHEN ,  Kai CHENG

IPC分类号： H01L27/146 ,  H01L27/148

CPC分类号： H01L27/14607 ,  H01L27/14831

摘要： Disclosed is an image sensor, comprising: at least one photosensitive unit, where the photosensitive unit includes a main photosensitive region and an auxiliary photosensitive region arranged at the periphery of the main photosensitive region, and a photosensitive component content of the main photosensitive region is different from a photosensitive component content of the auxiliary photosensitive region. The disclosure enlarges a wavelength range of sensible light of each the photosensitive unit by arranging the auxiliary photosensitive region at the periphery of the main photosensitive region of the photosensitive unit, where the photosensitive component content of the main photosensitive region is different from that of the auxiliary photosensitive region. Thereby more image details may be recorded to generate images with high dynamic range, which enables people to experience a visual effect close to a real environment.

公开(公告)号：US20240064412A1

公开(公告)日：2024-02-22

申请号：US18349801

申请日：2023-07-10

申请人： Micron Technology, Inc.

发明人： Jorgen Moholt

IPC分类号： H04N23/73 ,  H04N23/71 ,  H04N23/84 ,  H04N25/70 ,  H04N25/73 ,  H04N25/13 ,  H04N25/533 ,  H01L27/148 ,  H01L27/146

CPC分类号： H04N23/73 ,  H04N23/71 ,  H04N23/84 ,  H04N25/70 ,  H04N25/73 ,  H04N25/134 ,  H04N25/533 ,  H01L27/148 ,  H01L27/14609 ,  H01L27/14643

摘要： A pixel array uses two sets of pixels to provide accurate exposure control. One set of pixels provide continuous output signals for automatic light control (ALC) as the other set integrates and captures an image. ALC pixels allow monitoring of multiple pixels of an array to obtain sample data indicating the amount of light reaching the array, while allowing the other pixels to provide proper image data. A small percentage of the pixels in an array is replaced with ALC pixels and the array has two reset lines for each row; one line controls the reset for the image capture pixels while the other line controls the reset for the ALC pixels. In the columns, at least one extra control signal is used for the sampling of the reset level for the ALC pixels, which happens later than the sampling of the reset level for the image capture pixels.

公开(公告)号：US20240055466A1

公开(公告)日：2024-02-15

申请号：US18494163

申请日：2023-10-25

申请人： Raytheon Company

发明人： Eric Miller ,  Christian M. Boemler ,  Justin Gordon Adams Wehner ,  Drew Fairbanks ,  Sean P. Kilcoyne

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L23/498 ,  H01L21/311 ,  H01L23/488 ,  H01L23/48 ,  H01L23/485 ,  H04N25/75

CPC分类号： H01L27/1469 ,  H01L27/14685 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/148 ,  H01L23/49827 ,  H01L21/311 ,  H01L27/1462 ,  H01L23/488 ,  H01L23/481 ,  H01L27/14632 ,  H01L23/485 ,  H04N25/75

摘要： Methods and apparatus for an assembly having directly bonded first and second wafers where the assembly includes a backside surface and a front side surface. The first wafer includes IO signal connections vertically routed to the direct bonding interface by a first one of the bonding posts on the first wafer bonded to a first one of the bonding posts on the second wafer. The second wafer includes vertical routing of the IO signal connections from first one though the bonding posts on the second wafer to IO pads on a backside surface of the assembly.

公开(公告)号：US20230408411A1

公开(公告)日：2023-12-21

申请号：US18333952

申请日：2023-06-13

申请人： Quantum-Si Incorporated

发明人： Jonathan M. Rothberg ,  Keith G. Fife ,  David M. Boisvert

IPC分类号： G01N21/64 ,  H01L27/146 ,  H01L27/148 ,  G01S7/4865 ,  C12Q1/6869

CPC分类号： G01N21/6428 ,  G01N21/6408 ,  G01N21/6458 ,  H01L27/14603 ,  G01N21/645 ,  H01L27/14687 ,  H01L27/14812 ,  G01S7/4865 ,  C12Q1/6869 ,  G01S7/4863

摘要： An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

公开(公告)号：US11848350B2

公开(公告)日：2023-12-19

申请号：US17197292

申请日：2021-03-10

申请人： KLA Corporation

发明人： Abbas Haddadi ,  Sisir Yalamanchili ,  John Fielden ,  Yung-Ho Alex Chuang

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L27/148

CPC分类号： H01L27/14687 ,  H01L27/1464 ,  H01L27/14806

摘要： An image sensor is fabricated by first heavily p-type doping the thin top monocrystalline silicon substrate of an SOI wafer, then forming a relatively lightly p-doped epitaxial layer on a top surface of the top silicon substrate, where p-type doping levels during these two processes are controlled to produce a p-type dopant concentration gradient in the top silicon substrate. Sensing (circuit) elements and associated metal interconnects are fabricated on the epitaxial layer, then the handling substrate and oxide layer of the SOI wafer are at least partially removed to expose a lower surface of either the top silicon substrate or the epitaxial layer, and then a pure boron layer is formed on the exposed lower surface. The p-type dopant concentration gradient monotonically decreases from a maximum level near the top-silicon/epitaxial-layer interface to a minimum concentration level at the epitaxial layer's upper surface.

公开(公告)号：US20230402488A1

公开(公告)日：2023-12-14

申请号：US18447529

申请日：2023-08-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Feng-Chien HSIEH ,  Yun-Wei CHENG ,  Kuo-Cheng LEE ,  Cheng-Ming WU

IPC分类号： H01L27/148 ,  H01L27/146

CPC分类号： H01L27/14831 ,  H01L27/14643 ,  H01L27/14612 ,  H01L27/14689 ,  H01L27/1463

摘要： A pixel sensor may include a vertically arranged (or vertically stacked) photodiode region and floating diffusion region. The vertical arrangement permits the photodiode region to occupy a larger area of a pixel sensor of a given size relative to a horizontal arrangement, which increases the area in which the photodiode region can collect photons. This increases performance of the pixel sensor and permits the overall size of the pixel sensor to be reduced. Moreover, the transfer gate may surround at least a portion of the floating diffusion region and the photodiode region, which provides a larger gate switching area relative to a horizontal arrangement. The increased gate switching area may provide greater control over the transfer of the photocurrent and/or may reduce switching delay for the pixel sensor.