公开(公告)号：US20240030294A1

公开(公告)日：2024-01-25

申请号：US18321275

申请日：2023-05-22

申请人： Samsung Electronics Co., Ltd.

发明人： Minsu SEOL ,  Junyoung KWON ,  Jitak NAM ,  Minseok Yoo

IPC分类号： H01L29/18 ,  H01L29/16 ,  H01L29/417 ,  H01L21/02

CPC分类号： H01L29/18 ,  H01L29/1606 ,  H01L29/41725 ,  H01L21/02568 ,  H01L21/02485

摘要： A semiconductor device may include at least one first two-dimensional material layer; a source electrode and a drain electrode that are respectively on both sides of the at least one first two-dimensional material layer; second two-dimensional material layers respectively on a side of the source electrode and a side of the drain electrode and connected to the at least one first two-dimensional material layer; a gate insulating layer surrounding the at least one first two-dimensional material layer; and a gate electrode on the gate insulating layer.

公开(公告)号：US20230420510A1

公开(公告)日：2023-12-28

申请号：US17850078

申请日：2022-06-27

申请人： Intel Corporation

发明人： Carl H. NAYLOR ,  Kirby MAXEY ,  Kevin P. O'BRIEN ,  Chelsey DOROW ,  Sudarat LEE ,  Ashish Verma PENUMATCHA ,  Uygar E. AVCI ,  Matthew V. METZ ,  Scott B. CLENDENNING ,  Jiun-Ruey CHEN ,  Chia-Ching LIN ,  Carly ROGAN

IPC分类号： H01L29/06 ,  H01L29/778 ,  H01L29/786 ,  H01L29/18 ,  H01L21/02

CPC分类号： H01L29/0673 ,  H01L29/778 ,  H01L29/78696 ,  H01L29/18 ,  H01L21/02499 ,  H01L21/02568 ,  H01L21/02485

摘要： Embodiments described herein may be related to apparatuses, processes, and techniques directed to creating a transistor structure by selectively growing a 2D TMD directly in a stacked channel configuration, such as a stacked nanowire or nanoribbon formation. In embodiments, this TMD growth may occur for all of the nanowires or nanoribbons in the transistor structure in one stage. Placement of a SAM on a plurality of dielectric layers within the transistor structure stack facilitates channel deposition and channel geometry in the stacked channel configuration. Other embodiments may be described and/or claimed.

公开(公告)号：US20230275128A1

公开(公告)日：2023-08-31

申请号：US18154978

申请日：2023-01-16

申请人： Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

发明人： Junyoung KWON ,  Sangwoo KIM ,  Kyung-Eun BYUN ,  Minsu SEOL ,  Minseok SHIN ,  Pin ZHAO ,  Taehyeong KIM ,  Jaehwan JUNG

IPC分类号： H01L29/18 ,  H01L29/66

CPC分类号： H01L29/18 ,  H01L29/66969

摘要： A semiconductor device including a two-dimensional material and a method of manufacturing the same are provided. The semiconductor device may include a first two-dimensional material layer including a first two-dimensional semiconductor material; a plurality of second two-dimensional material layers connected to the first two-dimensional material layer, each having a thickness greater than that of the first two-dimensional material layer, and including a doped two-dimensional semiconductor material; and a plurality of electrodes on the plurality of second two-dimensional material layers.

公开(公告)号：US11670533B2

公开(公告)日：2023-06-06

申请号：US16921556

申请日：2020-07-06

申请人： X Display Company Technology Limited

发明人： Christopher Andrew Bower ,  Matthew Meitl ,  Salvatore Bonafede ,  Brook Raymond ,  Carl Ray Prevatte, Jr.

IPC分类号： H01L29/18 ,  H01L21/683 ,  B41F16/00 ,  H01L21/67 ,  H01L33/00 ,  H01L27/15

CPC分类号： H01L21/6835 ,  B41F16/00 ,  H01L21/67144 ,  H01L33/0093 ,  H01L33/0095 ,  H01L27/15 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68381

摘要： An exemplary wafer structure comprises a source wafer having a patterned sacrificial layer defining anchor portions separating sacrificial portions. A patterned device layer is disposed on or over the patterned sacrificial layer, forming a device anchor on each of the anchor portions. One or more devices are disposed in the patterned device layer, each device disposed entirely over a corresponding one of the one or more sacrificial portions and spatially separated from the one or more device anchors. A tether structure connects each device to a device anchor. The tether structure comprises a tether device portion disposed on or over the device, a tether anchor portion disposed on or over the device anchor, and a tether connecting the tether device portion to the tether anchor portion. The tether is disposed at least partly in the patterned device layer between the device and the device anchor.

公开(公告)号：US11621382B2

公开(公告)日：2023-04-04

申请号：US16889612

申请日：2020-06-01

申请人： POINT ENGINEERING CO., LTD.

发明人： Bum Mo Ahn ,  Seung Ho Park ,  Dong Hyeok Seo

IPC分类号： H01L29/18 ,  H01L33/00 ,  H01L29/20 ,  H01L33/62 ,  H01L25/13

摘要： The present invention relates generally to an anodic oxide film for electric contact, to an optoelectronic display, and to a method of manufacturing the optoelectronic display. More particularly, the present invention relates to an anodic oxide film for electric contact to electrically connect an optical element and a substrate in a position therebetween, to an optoelectronic display, and to a method of manufacturing the optoelectronic display.

公开(公告)号：US11574897B2

公开(公告)日：2023-02-07

申请号：US17026325

申请日：2020-09-21

申请人： Innolux Corporation

发明人： Yi-An Chen ,  Kuan-Hung Kuo ,  Tsau-Hua Hsieh ,  Kai Cheng ,  Wan-Ling Huang

IPC分类号： H01L29/18 ,  H01L25/13 ,  H01L33/56

摘要： The disclosure provides an electronic device and a method of manufacturing an electronic device. The electronic device includes a first substrate, a plurality of light-emitting dies, a transparent material layer, a sealing material, and a second substrate. The plurality of light-emitting dies are disposed on the first substrate. The transparent material layer is disposed on the first substrate. The sealing material is disposed on the first substrate and surrounds the transparent material layer. The second substrate is adhered to the first substrate through the transparent material layer and the sealing material.

公开(公告)号：US11430853B2

公开(公告)日：2022-08-30

申请号：US16959214

申请日：2019-08-27

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Pengcheng Lu ,  Yunlong Li ,  Yuanlan Tian ,  Yu Ao

IPC分类号： H01L29/18 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56

摘要： A display substrate and a manufacturing method and a display device are provided. The display substrate includes: a first electrode pattern, a connecting electrode pattern, a second electrode, and a light-emitting functional layer. The first electrode pattern is located in a display region and includes a plurality of first electrodes spaced apart from each other. The connecting electrode pattern is located in a peripheral region and includes a plurality of connecting electrodes. The second electrode is connected with the connecting electrode pattern, the second electrode and the first electrode pattern being spaced apart from each other. The light-emitting functional layer is located between the first electrode pattern and the second electrode, the connecting electrode pattern surrounds the first electrode pattern, and at least two of the plurality of connecting electrodes are each of a block shape and are spaced apart from each other.

公开(公告)号：US11411062B2

公开(公告)日：2022-08-09

申请号：US16739714

申请日：2020-01-10

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Dong Wook Kim ,  Won Kyu Kwak ,  Jin Woo Park ,  Hyun-Chol Bang ,  Sun-Ja Kwon ,  Jeong Woo Park

IPC分类号： H01L29/18 ,  H01L21/00 ,  H01L27/32

摘要： An exemplary embodiment of the present invention provides a display device including a first display area having a plurality of first pixel regions and a second display area having both a plurality of second pixel regions and a plurality of light transmissive regions. The second display area includes a plurality of scan lines. The second pixel region includes a plurality of pixel electrodes and a voltage line disposed on a same layer as the pixel electrodes. The voltage line overlaps the scan line to be parallel therewith in the light transmissive region.

公开(公告)号：US11380657B2

公开(公告)日：2022-07-05

申请号：US16966729

申请日：2018-02-01

申请人： LG ELECTRONICS INC.

发明人： Changseo Park ,  Bongchu Shim

IPC分类号： H01L29/18 ,  H01L33/00 ,  H01L25/075 ,  H01L23/00 ,  H01L33/62

摘要： Discussed is a display device comprising a substrate; a plurality of cells provided with a partition wall protruding on the substrate, and sequentially arranged along one direction; a plurality of semiconductor light-emitting elements respectively accommodated in the plurality of cells; and a first electrode provided with a plurality of electrode lines arranged on a bottom of the plurality of cells, and electrically connected to the plurality of semiconductor light-emitting elements, wherein the bottom of the plurality of cells comprise a first region covered by the plurality of electrode lines, and a second region formed between the plurality of electrode lines.

公开(公告)号：US11296064B2

公开(公告)日：2022-04-05

申请号：US16898617

申请日：2020-06-11

申请人： LITE-ON OPTO TECHNOLOGY (CHANGZHOU) CO., LTD. ,  LITE-ON TECHNOLOGY CORPORATION

发明人： Chen-Hsiu Lin ,  Tsung-Kang Ying ,  Erh-Chan Hsu

IPC分类号： H01L29/18 ,  H01L33/00 ,  H01L25/16 ,  H01L33/62 ,  H01L23/485 ,  H01L25/075 ,  H01L33/50 ,  H01L33/58 ,  F21V31/00 ,  H01L33/40 ,  H01L33/56 ,  H01L33/60

摘要： A substrate structure with a buried chip and a light emitting device using the same are provided. The substrate structure includes a base layer, a control chip, a filling layer, a first upper resin layer and a first lower resin layer. The substrate layer has a first surface, a second surface opposite to the first surface, and an opening passing through the first surface and the second surface. The control chip is disposed in the opening, and an annular space having a specific width is defined by an outer wall surface of the control chip and an inner wall surface of the opening. The filling layer is filled in the annular space. The first upper resin layer and the first lower resin layer are respectively disposed on the first surface and the second surface of the base layer.