公开(公告)号：US11621324B2

公开(公告)日：2023-04-04

申请号：US17323170

申请日：2021-05-18

申请人： STMicroelectronics (Crolles 2) SAS

发明人： Alexis Gauthier ,  Julien Borrel

IPC分类号： H01L29/08 ,  H01L29/06 ,  H01L29/167 ,  H01L29/66 ,  H01L29/737 ,  H01L29/732 ,  H01L21/265

摘要： A bipolar junction transistor includes an extrinsic collector region buried in a semiconductor substrate under an intrinsic collector region. Carbon-containing passivating regions are provided to delimit the intrinsic collector region. An insulating layer on the intrinsic collector region includes an opening within which an extrinsic base region is provided. A semiconductor layer overlies the insulating layer, is in contact with the extrinsic base region, and includes an opening with insulated sidewalls. The collector region of the transistor is provided between the insulated sidewalls.

公开(公告)号：US20230087058A1

公开(公告)日：2023-03-23

申请号：US17549013

申请日：2021-12-13

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Shesh Mani Pandey ,  Judson R. Holt ,  Vibhor Jain

IPC分类号： H01L29/732 ,  H01L29/66

摘要： The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: a base region composed of a semiconductor on insulator material; an emitter region above the base region; and a collector region under the base region and within a cavity of a buried insulator layer.

公开(公告)号：US20230084734A1

公开(公告)日：2023-03-16

申请号：US17990873

申请日：2022-11-21

申请人： STANDARD LIFTERS, INC.

发明人： Scott M. Breen ,  Joel T. Pyper

IPC分类号： H01L27/06 ,  H01L29/45 ,  H01L21/324 ,  H01L21/8249 ,  H01L29/732

摘要： A modular guided keeper base, guided keeper assembly, and related method includes a modular guided keeper base that mounts to a die member. The guided keeper base has an integrated stop for guide pin retention. The guided keeper base can also accommodate a variety of bushings within the base. The guided keeper base is attached to a die member using a mounting flange(s). Mounting fasteners pass through the fastener holes in the mounting flanges and are anchored in the die member to securely retain the guided keeper assembly in place. A retainer ring is mounted in an associated groove in the base over the heads of the mounting fasteners to prevent unintentional unfastening of the fasteners from the die member.

公开(公告)号：US11588043B2

公开(公告)日：2023-02-21

申请号：US17229950

申请日：2021-04-14

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Viorel C. Ontalus ,  Judson R. Holt

IPC分类号： H01L29/06 ,  H01L29/732 ,  H01L29/66 ,  H01L29/161 ,  H01L29/167 ,  H01L29/10

摘要： Aspects of the disclosure provide a bipolar transistor structure with an elevated extrinsic base, and related methods to form the same. A bipolar transistor according to the disclosure may include a collector on a substrate, and a base film on the collector. The base film includes a crystalline region on the collector and a non-crystalline region adjacent the crystalline region. An emitter is on a first portion of the crystalline region of the base film. An elevated extrinsic base is on a second portion of the crystalline region of the base film, and adjacent the emitter.

公开(公告)号：US20220336646A1

公开(公告)日：2022-10-20

申请号：US17229950

申请日：2021-04-14

申请人： GLOBALFOUNDRIES U.S. Inc.

发明人： Viorel C. Ontalus ,  Judson R. Holt

IPC分类号： H01L29/732 ,  H01L29/06 ,  H01L29/10 ,  H01L29/161 ,  H01L29/167 ,  H01L29/66

摘要： Aspects of the disclosure provide a bipolar transistor structure with an elevated extrinsic base, and related methods to form the same. A bipolar transistor according to the disclosure may include a collector on a substrate, and a base film on the collector. The base film includes a crystalline region on the collector and a non-crystalline region adjacent the crystalline region. An emitter is on a first portion of the crystalline region of the base film. An elevated extrinsic base is on a second portion of the crystalline region of the base film, and adjacent the emitter.

公开(公告)号：US20220336645A1

公开(公告)日：2022-10-20

申请号：US17301807

申请日：2021-04-15

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Alexander Reznicek ,  Bahman Hekmatshoartabari ,  Tak H. Ning ,  Liying Jiang

IPC分类号： H01L29/732 ,  H01L29/66 ,  H01L29/737

摘要： A vertical bipolar junction transistor may include an intrinsic base epitaxially grown on a first emitter or collector, the intrinsic base being compositionally graded, a second collector or emitter formed on the intrinsic base, and an extrinsic base formed all-around the intrinsic base. The extrinsic base may be isolated from the first emitter or collector by a first spacer. The extrinsic base may be isolated from the second collector or emitter by a second spacer. The extrinsic base may have a larger bandgap than the intrinsic base. The intrinsic base may be doped with a p-type dopant, and the first emitter or collector, and the second collector or emitter may be doped with an n-type dopant. The first emitter or collector, the intrinsic base, and the second collector or emitter may be made of a III-V semiconductor material.

公开(公告)号：US20220254879A1

公开(公告)日：2022-08-11

申请号：US17734486

申请日：2022-05-02

申请人： STMicroelectronics (Crolles 2) SAS

发明人： Alexis GAUTHIER ,  Pascal CHEVALIER ,  Gregory AVENIER

IPC分类号： H01L29/06 ,  H01L21/8222 ,  H01L29/66 ,  H01L29/732

摘要： A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.

公开(公告)号：US11374118B2

公开(公告)日：2022-06-28

申请号：US16936352

申请日：2020-07-22

申请人： Monolithic 3D Inc.

发明人： Zvi Or-Bach ,  Deepak C. Sekar ,  Brian Cronquist ,  Zeev Wurman

IPC分类号： H01L27/06 ,  G03F9/00 ,  H01L21/762 ,  H01L21/84 ,  H01L23/48 ,  H01L23/544 ,  H01L27/02 ,  H01L27/105 ,  H01L27/108 ,  H01L27/11 ,  H01L27/112 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/118 ,  H01L27/12 ,  H01L29/66 ,  H01L29/45 ,  H01L29/786 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/732 ,  H01L29/808 ,  H01L21/768 ,  H01L21/822 ,  H01L23/367 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L23/00 ,  H01L21/268 ,  H01L27/088

摘要： A method to form a 3D integrated circuit, the method including: providing a first wafer including a first crystalline substrate, a plurality of first transistors, and first copper interconnecting layers, where the first copper interconnecting layers at least interconnect the plurality of first transistors; providing a second wafer including a second crystalline substrate, a plurality of second transistors, and second copper interconnecting layers, where the second copper interconnecting layers at least interconnect the plurality of second transistors; and then performing a face-to-face bonding of the second wafer on top of the first wafer, where the face-to-face bonding includes copper to copper bonding; and thinning the second crystalline substrate to a thickness of less than 5 micro-meters.

公开(公告)号：US20220190115A1

公开(公告)日：2022-06-16

申请号：US17537726

申请日：2021-11-30

申请人： IDEAL POWER INC.

发明人： Alireza MOJAB ,  Daniel BRDAR

IPC分类号： H01L29/10 ,  H01L29/732 ,  H01L29/747 ,  H03K17/082

摘要： Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper collector-emitter of the transistor, through the transistor, and from a lower collector-emitter to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower collector-emitter to the lower terminal by opening a lower-main FET and thereby commutating a first shutoff current through a lower base of the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.

公开(公告)号：US11355585B2

公开(公告)日：2022-06-07

申请号：US16590142

申请日：2019-10-01

申请人： Analog Devices International Unlimited Company

发明人： Edward John Coyne ,  Alan Brannick ,  Shane Tooher ,  Breandán Pol Og Ó hAnnaidh ,  Catriona Marie O'Sullivan ,  Shane Patrick Geary

IPC分类号： H01L29/08 ,  H01L21/8228 ,  H01L27/082 ,  H01L29/40 ,  H01L29/66 ,  H01L29/732

摘要： A charge control structure is provided for a bipolar junction transistor to control the charge distribution in the depletion region extending into the bulk collector region when the collector-base junction is reverse-biased. The charge control structure comprises a lateral field plate above the upper surface of the collector and dielectrically isolated from the upper surface of the collector and a vertical field plate which is at a side of the collector and is dielectrically isolated from the side of the collector. The charge in the depletion region extending into the collector is coupled to the base as well as the field-plates in the charge-control structure, instead of only being coupled to the base of the bipolar junction transistor. In this way, a bipolar junction transistor is provided where the dependence of collector current on the collector-base voltage, also known as Early effect, can be reduced.