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    P-type ohmic electrode in gallium nitride based optical device and fabrication method thereof
    3.
    发明授权
    P-type ohmic electrode in gallium nitride based optical device and fabrication method thereof 失效
    氮化镓基光学器件中的P型欧姆电极及其制造方法

    公开(公告)号：US06818467B2

    公开(公告)日：2004-11-16

    申请号：US10394045

    申请日：2003-03-24

    申请人： Jong Lam Lee ,  Soo Young Kim ,  Ho Won Jang

    发明人： Jong Lam Lee ,  Soo Young Kim ,  Ho Won Jang

    IPC分类号： H01L2940

    CPC分类号： H01L33/42 ,  H01L21/28575 ,  H01L33/32

    摘要： A gallium nitride (GaN) based optical device and a fabrication method thereof are provided. The GaN based optical device includes a substrate, a p-type GaN (p-GaN) layer formed on the substrate, and a p-type ohmic electrode formed on the p-GaN layer, wherein the p-type ohmic electrode is formed of a triple layer comprised of a nickel (Ni) layer, a gold (Au) layer and an indium tin oxide (ITO) layer sequentially formed. The thicknesses of the Ni layer and the Au layer forming the triple layer are smaller than the thickness of the ITO layer. When the p-type ohmic electrode in the GaN based optical device is formed of a triple layer comprised of Ni/Au/ITO, the Ni/Au layers reduce contact resistance and the ITO, which is a transparent, conductive oxide layer, increases transparency and increases luminescence efficiency.

    摘要翻译： 提供了一种基于氮化镓（GaN）的光学器件及其制造方法。 GaN基光学器件包括衬底，在衬底上形成的p型GaN（p-GaN）层和形成在p-GaN层上的p型欧姆电极，其中p型欧姆电极由 依次形成由镍（Ni）层，金（Au）层和氧化铟锡（ITO）层构成的三层。 形成三层的Ni层和Au层的厚度小于ITO层的厚度。 当GaN基光学器件中的p型欧姆电极由由Ni / Au / ITO组成的三层形成时，Ni / Au层降低接触电阻，并且作为透明导电氧化物层的ITO增加透明度 并提高发光效率。

    Intermediate base for a semiconductor module and a semiconductor module using the intermediate base
    6.
    发明授权
    Intermediate base for a semiconductor module and a semiconductor module using the intermediate base 失效
    用于半导体模块的中间基底和使用该中间基底的半导体模块

    公开(公告)号：US06781215B2

    公开(公告)日：2004-08-24

    申请号：US09997345

    申请日：2001-11-29

    申请人： Marcel Heerman

    发明人： Marcel Heerman

    IPC分类号： H01L2940

    CPC分类号： H05K3/3436 ,  H01L23/13 ,  H01L23/49827 ,  H01L2224/92144 ,  H05K1/0271 ,  H05K2201/09036 ,  H05K2201/09472 ,  H05K2201/09509 ,  Y02P70/613

    摘要： An intermediate base supports a semiconductor module on a printed circuit board. The intermediate base has an upper face on which the semiconductor component is directly mounted with its component connecting elements facing the upper face. The base has through-holes which are incorporated from a lower face of the base body so that the component conducting elements of the semiconductor component are exposed. The through-holes are then at least partially coated with a metal layer, which also contacts the exposed portions of the component connecting elements. Each of the through-holes has at least a partially annular notch, so that each through-hole extends through a recessed stud, which is used to form an external connection for the module onto the printed circuit board.

    摘要翻译： 中间基座支撑印刷电路板上的半导体模块。 中间基座具有上表面，半导体部件直接安装在其上，其部件连接元件面向上表面。 底座具有从基体的下表面结合的通孔，使得半导体部件的部件导电元件露出。 然后，通孔至少部分地涂覆有金属层，金属层也接触部件连接元件的暴露部分。 每个通孔具有至少部分环形的凹口，使得每个通孔延伸穿过凹入的螺柱，其用于在模块上形成用于印刷电路板的外部连接。

    Data carrier with an integrated circuit between two carrier layers
    8.
    发明授权
    Data carrier with an integrated circuit between two carrier layers 有权
    数据载体具有两个载体层之间的集成电路

    公开(公告)号：US06737732B2

    公开(公告)日：2004-05-18

    申请号：US10179353

    申请日：2002-06-25

    申请人： Reinhard Fritz ,  Gerardus Franciscus Cornelis Maria Lijten ,  Hubertus Henricus Alphonsus Winters

    发明人： Reinhard Fritz ,  Gerardus Franciscus Cornelis Maria Lijten ,  Hubertus Henricus Alphonsus Winters

    IPC分类号： H01L2940

    CPC分类号： G06K19/07749

    摘要： A data carrier (1) for contactless communication comprises a first carrier layer (2) and a second carrier layer (3) which are held together by an adhesive layer (15), wherein an integrated circuit (11) is held in a given position between one of the two carrier layers (2, 3) and the adhesive layer (15), the circuit comprising transmission means (13, 14) which can communicate in a contactless manner with transmission means (7, 8) at the carrier layer, and the transmission means (7, 8) of the carrier layer are connected with electrical conduction to further transmission means (5, 6) by which a contactless communication with a communication station can be carried out, and wherein the final, mechanically stable retention of the integrated circuit (11) in the position reserved for it in the data carrier (1) is realized by means of the adhesive layer (15) only.

    摘要翻译： 用于非接触通信的数据载体（1）包括由粘合剂层（15）保持在一起的第一载体层（2）和第二载体层（3），其中集成电路（11）保持在给定位置 在两个载体层（2,3）中的一个和粘合剂层（15）之间，电路包括能够以非接触方式与载体层上的传输装置（7,8）通信的传输装置（13,14） 并且载体层的传输装置（7,8）与导电连接以进一步传输装置（5,6），通过该传输装置可以执行与通信站的非接触式通信，并且其中最后的机械稳定保持 在数据载体（1）中为其保留的位置中的集成电路（11）仅通过粘合剂层（15）实现。