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    LIGHT DETECTION DEVICES WITH PROTECTIVE LINER AND METHODS RELATED TO SAME
    2.
    发明申请
    LIGHT DETECTION DEVICES WITH PROTECTIVE LINER AND METHODS RELATED TO SAME 有权

    公开(公告)号：US20230125640A1

    公开(公告)日：2023-04-27

    申请号：US18145105

    申请日：2022-12-22

    申请人： Illumina, Inc.

    发明人： Xiuyu CAI ,  Joseph Francis PINTO ,  Thomas A. BAKER ,  Tracy Helen FUNG

    IPC分类号： G01N21/64 ,  B01L3/00 ,  G01J1/44 ,  G01N33/58 ,  G02B6/42 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0232

    摘要： Light detection devices and related methods are provided. The devices may comprise a reaction structure for containing a reaction solution with a relatively high or low pH and a plurality of reaction sites that generate light emissions. The devices may comprise a device base comprising a plurality of light sensors, device circuitry coupled to the light sensors, and a plurality of light guides that block excitation light but permit the light emissions to pass to a light sensor. The device base may also include a shield layer extending about each light guide between each light guide and the device circuitry, and a protection layer that is chemically inert with respect to the reaction solution extending about each light guide between each light guide and the shield layer. The protection layer prevents reaction solution that passes through the reaction structure and the light guide from interacting with the device circuitry.

    Light detecting device and method of manufacturing same
    3.
    发明授权
    Light detecting device and method of manufacturing same 有权

    公开(公告)号：US11626529B2

    公开(公告)日：2023-04-11

    申请号：US17173339

    申请日：2021-02-11

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Changyoung Park ,  Sanghun Lee

    IPC分类号： H01L31/103 ,  H01L31/0216 ,  H01L31/18

    摘要： A light detecting device includes a light absorbing layer configured to absorb light in a wavelength range from visible light to short-wave infrared (SWIR); a first semiconductor layer provided on a first surface of the light absorbing layer; an anti-reflective layer provided on the first semiconductor layer and comprising a material having etch selectivity with respect to the first semiconductor layer; and a second semiconductor layer provided on a second surface of the light absorbing layer. The first semiconductor layer has a thickness less than 500 nm so as to be configured to allow light to transmit therethrough in the wavelength range from visible light to SWIR.

    SOLAR CELL, METHOD FOR MANUFACTURING SOLAR CELL, AND SOLAR CELL MODULE
    5.
    发明申请
    SOLAR CELL, METHOD FOR MANUFACTURING SOLAR CELL, AND SOLAR CELL MODULE 有权

    公开(公告)号：US20230074411A1

    公开(公告)日：2023-03-09

    申请号：US17988063

    申请日：2022-11-16

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： Hiroshi Hashigami ,  Takenori Watabe ,  Hiroyuki Otsuka

    IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

    摘要： A solar cell is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness of 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology. Furthermore, an annealing step, which has been necessary to achieve the passivation effects of the aluminum oxide film in the past, can be eliminated, thus dramatically reducing costs.

    SOLAR CELL
    6.
    发明申请
    SOLAR CELL 有权

    公开(公告)号：US20230067444A1

    公开(公告)日：2023-03-02

    申请号：US17517255

    申请日：2021-11-02

    申请人： United Renewable Energy Co., Ltd.

    发明人： Hung-Ming LIN ,  Hsiu-Hung LIU ,  Chen-Po YU ,  Chun-Liang CHIANG

    IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/048

    摘要： A solar cell includes a silicon substrate, a passivation layer, a first protection layer, a second protection layer, and a third protection layer. The material of the passivation layer is aluminum oxide, and the passivation layer is on the lower surface of the silicon substrate. The material of the first protection layer is silicon oxynitride, and the first protection layer is on a surface of the passivation layer opposite to the silicon substrate. The material of the second protection layer is silicon nitride, and the second protection layer is on a surface of the first protection layer opposite to the passivation layer. The material of the third protection layer is silicon oxynitride or silicon oxide, and the third protection layer is on a surface of the second protection layer opposite to the first protection layer.